In this study, it is aimed to determine the ranking importance levels of the stages to be taken into consideration for new product development on a global scale in the automotive design process. New product design act...In this study, it is aimed to determine the ranking importance levels of the stages to be taken into consideration for new product development on a global scale in the automotive design process. New product design activity and stage-gate process differences between local automotive firms (serial production factory and stage-gate department in Turkey) and global automotive companies (serial production factory and stage-gate department in Turkey) are examined comparatively in the research area. In the automotive industry, which has been developing for a century, the question of how the local company products operating in the last sixty years have not been able to spread globally or how to develop global products is the background question of the research. For this purpose, one on one interviews were held with the managers of 3 national and 3 international automotive companies, who worked in the same region and who had previously designed a new vehicle, with design and product development departments.?According to?the data obtained by the AHP (Analytic Hierarchy Process) in the automotive design process, the importance of the criteria that should be taken into account for global product development has revealed. According to the results of the study, it was found that design validation stages were the most important globalization criterion in automotive design process as a new study area. In the comprehensive survey of the study, no other publication has been encountered to measure or evaluate the stages in the automotive design and new product development process in other sectors, including the vehicle industry. As in every industry sector, in the automotive industry, with the new product companies provide market development or competitive advantage. The new product is the life channel of a company and in the realization of this new vehicle;the disciplines of the automotive industry are formed by a hundred years of experience.展开更多
A gate-last process for fabricating HfSiON/TaN n-channel metal-oxide-semiconductor-field-effect transistors （NMOSFETs） is presented. In the process, a HfSiON gate dielectric with an equivalent oxide thickness of 10 ...A gate-last process for fabricating HfSiON/TaN n-channel metal-oxide-semiconductor-field-effect transistors （NMOSFETs） is presented. In the process, a HfSiON gate dielectric with an equivalent oxide thickness of 10 ？ was prepared by a simple physical vapor deposition method. Poly-Si was deposited on the HfSiON gate dielectric as a dummy gate. After the source/drain formation, the poly-Si dummy gate was removed by tetramethylammonium hydroxide （TMAH） wet-etching and replaced by a TaN metal gate. Because the metal gate was formed after the ion-implant doping activation process, the effects of the high temperature process on the metal gate were avoided. The fabricated device exhibits good electrical characteristics, including good driving ability and excellent sub-threshold characteristics. The device’s gate length is 73 nm, the driving current is 117 μA/μm under power supply voltages of VGS=VDS=1.5 V and the off-state current is only 4.4 nA/μ. The lower effective work function of TaN on HfSiON gives the device a suitable threshold voltage （～ 0.24 V） for high performance NMOSFETs. The device’s excellent performance indicates that this novel gate-last process is practical for fabricating high performance MOSFETs.展开更多
On the basis of analysis the governing process of downstream water level gates AVIO and AVIS, a mathematical model for simulation of dynamic operation process of hydraulically automated irrigation canals instalIed wit...On the basis of analysis the governing process of downstream water level gates AVIO and AVIS, a mathematical model for simulation of dynamic operation process of hydraulically automated irrigation canals instalIed with AVIO and AVIS gates is presented, the main point of this rnathematical model is firstly applying a set of unsteady flow equations （St. Venant equations here） and treating the condition of gate movement as its dynamic boundary, and then deeoupling this interaction of gate movement with the change of canal flow. In this process, it is necessary to give the gateg open-loop transfer function whose input is water level deviation and output is gate discharge. The result of this simulation for a practical reach has shown it has satisfactory accuracy.展开更多
Sliding gate control system is widely employed in continuous casting process of steel to control flow rate of molten steel.As molten steel passes through a sliding gate,uneven flow develops.This will cause asymmetrica...Sliding gate control system is widely employed in continuous casting process of steel to control flow rate of molten steel.As molten steel passes through a sliding gate,uneven flow develops.This will cause asymmetrical distribution of flow and temperature field in mold consequently,formation of vortex near the nozzle and entrapment of CC powder into the molten steel.etc,which have negative effect on process productivity and product quality.To suppress the uneven flow,electromagnetic swirling flow has been proposed to impose on the flow in submerged entry nozzle below the sliding gate.In this study the uneven flow developed by incompletely open sliding gate and the suppression of this uneven flow using electromagnetic swirling flow are numerically studied in round billet continuous casting of steel process.The improvement of the flow and temperature filed in the submerged entry nozzle and mold are investigated.It is found that:The uneven velocity in nozzle can be suppressed by electromagnetic swirling flow,and the flow and temperature field in mold be improved obviously;With the increase of electromagnetic swirling intensity,the effect of uneven flow can be almost completely suppressed.展开更多
Nitrogen-vacancy （NV） center in diamond is one of the most promising candidates to implement room temperature quantum computing. In this review, we briefly discuss the working principles and recent experimental prog...Nitrogen-vacancy （NV） center in diamond is one of the most promising candidates to implement room temperature quantum computing. In this review, we briefly discuss the working principles and recent experimental progresses of this spin qubit. These results focus on understanding and prolonging center spin coherence, steering and probing spin states with dedicated quantum control techniques, and exploiting the quantum nature of these multi-spin systems, such as superposition and entanglement, to demonstrate the superiority of quantum information processing. Those techniques also stimulate the fast development of NV-based quantum sensing, which is an interdisciplinary field with great potential applications.展开更多
We propose a scheme for implementing conditional quantum phase gates for two four-state atoms trapped in a cavity. The two ground states of the atoms are coupled through two Raman processes induced by the cavity mode ...We propose a scheme for implementing conditional quantum phase gates for two four-state atoms trapped in a cavity. The two ground states of the atoms are coupled through two Raman processes induced by the cavity mode and two classical fields. Under certain conditions nonresonant Raman processes lead to two-atom coupling and can be used to produce conditional phase gates. The scheme is insensitive to cavity decay, thermal photons, and atomic spontaneous emission. The scheme does not require individual addressing of the atoms.展开更多
In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduc...In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).展开更多
In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
A novel reconfigurable hardware system which uses both muhi-DSP and FPGA to attain high performance and real-time image processing are presented. The system structure and working principle of mainly processing multi-B...A novel reconfigurable hardware system which uses both muhi-DSP and FPGA to attain high performance and real-time image processing are presented. The system structure and working principle of mainly processing multi-BSP board, extended multi-DSP board are analysed. The outstanding advantage is that the communication among different board components of this system is supported by high speed link ports ＆ serial ports for increasing the system performance and computational power. Then the implementation of embedded real-time operating systems （RTOS） by us is discussed in detail. In this system, we adopt two kinds of parallel structures controlled by RTOS for parallel processing of algorithms. The experimental results show that exploitive period of the system is short, and maintenance convenient. Thus it is suitable for real-time image processing and can get satisfactory effect of image recognition.展开更多
The outstanding advantage of digital signal processing (DSP) techniques and Field Programmable Gate Array (FPGA) technology is capable of improving the quality of the experimental measurements for nuclear radiation. I...The outstanding advantage of digital signal processing (DSP) techniques and Field Programmable Gate Array (FPGA) technology is capable of improving the quality of the experimental measurements for nuclear radiation. In this article, a compact DMCA 8 K was designed and manufactured using DSP technique based on FPGA technology. In particular, the output of the preamplifier is completely processed by digital techniques which are obtained from the analog-to-digital converter (ADC) to calculate the baseline, DC offset, energy peaks, pile up, threshold discrimination and then the form of energy spectrum. The Spartan-6 board is used as a hardware for the development of the digital multichannel analyzer (DMCA), which is equipped with the 14-bit AD6645 with 62.5 Msps sample rate. The application software for instrument control, data acquisition and data processing was written under C++ builder via the RS-232 interface. The designed DMCA system has been tested with a HPGe detector using gamma sources of 60Co and 137Cs and a reference pulser.展开更多
文摘In this study, it is aimed to determine the ranking importance levels of the stages to be taken into consideration for new product development on a global scale in the automotive design process. New product design activity and stage-gate process differences between local automotive firms (serial production factory and stage-gate department in Turkey) and global automotive companies (serial production factory and stage-gate department in Turkey) are examined comparatively in the research area. In the automotive industry, which has been developing for a century, the question of how the local company products operating in the last sixty years have not been able to spread globally or how to develop global products is the background question of the research. For this purpose, one on one interviews were held with the managers of 3 national and 3 international automotive companies, who worked in the same region and who had previously designed a new vehicle, with design and product development departments.?According to?the data obtained by the AHP (Analytic Hierarchy Process) in the automotive design process, the importance of the criteria that should be taken into account for global product development has revealed. According to the results of the study, it was found that design validation stages were the most important globalization criterion in automotive design process as a new study area. In the comprehensive survey of the study, no other publication has been encountered to measure or evaluate the stages in the automotive design and new product development process in other sectors, including the vehicle industry. As in every industry sector, in the automotive industry, with the new product companies provide market development or competitive advantage. The new product is the life channel of a company and in the realization of this new vehicle;the disciplines of the automotive industry are formed by a hundred years of experience.
基金Project supported by the Beijing Natural Science Foundation,China(Grant No.4123106)the National Science and Technology Major Projects of the Ministry of Science and Technology of China(Grant No.2009ZX02035)
文摘A gate-last process for fabricating HfSiON/TaN n-channel metal-oxide-semiconductor-field-effect transistors （NMOSFETs） is presented. In the process, a HfSiON gate dielectric with an equivalent oxide thickness of 10 ？ was prepared by a simple physical vapor deposition method. Poly-Si was deposited on the HfSiON gate dielectric as a dummy gate. After the source/drain formation, the poly-Si dummy gate was removed by tetramethylammonium hydroxide （TMAH） wet-etching and replaced by a TaN metal gate. Because the metal gate was formed after the ion-implant doping activation process, the effects of the high temperature process on the metal gate were avoided. The fabricated device exhibits good electrical characteristics, including good driving ability and excellent sub-threshold characteristics. The device’s gate length is 73 nm, the driving current is 117 μA/μm under power supply voltages of VGS=VDS=1.5 V and the off-state current is only 4.4 nA/μ. The lower effective work function of TaN on HfSiON gives the device a suitable threshold voltage （～ 0.24 V） for high performance NMOSFETs. The device’s excellent performance indicates that this novel gate-last process is practical for fabricating high performance MOSFETs.
基金Supported by the 863 Programof China (2001AA242111)
文摘On the basis of analysis the governing process of downstream water level gates AVIO and AVIS, a mathematical model for simulation of dynamic operation process of hydraulically automated irrigation canals instalIed with AVIO and AVIS gates is presented, the main point of this rnathematical model is firstly applying a set of unsteady flow equations （St. Venant equations here） and treating the condition of gate movement as its dynamic boundary, and then deeoupling this interaction of gate movement with the change of canal flow. In this process, it is necessary to give the gateg open-loop transfer function whose input is water level deviation and output is gate discharge. The result of this simulation for a practical reach has shown it has satisfactory accuracy.
基金Item Sponsored by The Central Universities(N100409010)Project for Key Laboratory of Liaoning Province(LS2010065)"111 project" of Northeastern University,China(B07015)
文摘Sliding gate control system is widely employed in continuous casting process of steel to control flow rate of molten steel.As molten steel passes through a sliding gate,uneven flow develops.This will cause asymmetrical distribution of flow and temperature field in mold consequently,formation of vortex near the nozzle and entrapment of CC powder into the molten steel.etc,which have negative effect on process productivity and product quality.To suppress the uneven flow,electromagnetic swirling flow has been proposed to impose on the flow in submerged entry nozzle below the sliding gate.In this study the uneven flow developed by incompletely open sliding gate and the suppression of this uneven flow using electromagnetic swirling flow are numerically studied in round billet continuous casting of steel process.The improvement of the flow and temperature filed in the submerged entry nozzle and mold are investigated.It is found that:The uneven velocity in nozzle can be suppressed by electromagnetic swirling flow,and the flow and temperature field in mold be improved obviously;With the increase of electromagnetic swirling intensity,the effect of uneven flow can be almost completely suppressed.
基金Project supported by the National Basic Research Program of China(Grant Nos.2014CB921402 and 2015CB921103)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB07010300)+1 种基金the National Natural Science Foundation of China(Grant No.11574386)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB0803)
文摘Nitrogen-vacancy （NV） center in diamond is one of the most promising candidates to implement room temperature quantum computing. In this review, we briefly discuss the working principles and recent experimental progresses of this spin qubit. These results focus on understanding and prolonging center spin coherence, steering and probing spin states with dedicated quantum control techniques, and exploiting the quantum nature of these multi-spin systems, such as superposition and entanglement, to demonstrate the superiority of quantum information processing. Those techniques also stimulate the fast development of NV-based quantum sensing, which is an interdisciplinary field with great potential applications.
基金supported by the National Natural Science Foundation of China (Grant No 10674025)the Doctoral Foundation of the Ministry of Education of China (Grant No 20070386002)
文摘We propose a scheme for implementing conditional quantum phase gates for two four-state atoms trapped in a cavity. The two ground states of the atoms are coupled through two Raman processes induced by the cavity mode and two classical fields. Under certain conditions nonresonant Raman processes lead to two-atom coupling and can be used to produce conditional phase gates. The scheme is insensitive to cavity decay, thermal photons, and atomic spontaneous emission. The scheme does not require individual addressing of the atoms.
文摘In Present scenario battery-powered hand-held multimedia systems become popular. The power consumption in these devices is a major concern these days for its long operational life. Although various techniques to reduce the power dissipation has been developed. The most adopted method is to lower the supply voltage. But lowering the Vdd reduces the gate current much more rapidly than the sub-threshold current and degrades the SNM. This degraded SNM further limits the voltage scaling. To improve the stability of the SRAM cell topology of the conventional 6T Static Random Access Memory (SRAM) cell has been changed and revised to 8T and 10T cell, the topologies. This work has analyzed the SRAM’s Static Noise Margin (SNM) at 8T for various process corners at 65nm technology. It evaluates the SNM along with the write margins of the cell along with the cell size of 8T SRAM bit-cell operating in sub-threshold voltage at various process corners. It is observed that an 8T cell has 13 % better write margin than conventional 6T SRAM cell. This paper analyses the dependence of SNM of SRAM memory cell on supply voltage, temperature, transistor sizing in 65nm technology at various process corners (TT, SS, FF, FS, and SF).
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
基金This project was supported by the National Natural Science Foundation of China(60135020) National Key Pre-researchProject of China(413010701 -3) .
文摘A novel reconfigurable hardware system which uses both muhi-DSP and FPGA to attain high performance and real-time image processing are presented. The system structure and working principle of mainly processing multi-BSP board, extended multi-DSP board are analysed. The outstanding advantage is that the communication among different board components of this system is supported by high speed link ports ＆ serial ports for increasing the system performance and computational power. Then the implementation of embedded real-time operating systems （RTOS） by us is discussed in detail. In this system, we adopt two kinds of parallel structures controlled by RTOS for parallel processing of algorithms. The experimental results show that exploitive period of the system is short, and maintenance convenient. Thus it is suitable for real-time image processing and can get satisfactory effect of image recognition.
文摘The outstanding advantage of digital signal processing (DSP) techniques and Field Programmable Gate Array (FPGA) technology is capable of improving the quality of the experimental measurements for nuclear radiation. In this article, a compact DMCA 8 K was designed and manufactured using DSP technique based on FPGA technology. In particular, the output of the preamplifier is completely processed by digital techniques which are obtained from the analog-to-digital converter (ADC) to calculate the baseline, DC offset, energy peaks, pile up, threshold discrimination and then the form of energy spectrum. The Spartan-6 board is used as a hardware for the development of the digital multichannel analyzer (DMCA), which is equipped with the 14-bit AD6645 with 62.5 Msps sample rate. The application software for instrument control, data acquisition and data processing was written under C++ builder via the RS-232 interface. The designed DMCA system has been tested with a HPGe detector using gamma sources of 60Co and 137Cs and a reference pulser.
