In this work,we have fabricated a single layer graphene spin transistor on SiO2/Si with a semiconducting tri-layer MoS2 as the tunneling barrier between the ferromagnetic electrodes and the graphene channel.The spin t...In this work,we have fabricated a single layer graphene spin transistor on SiO2/Si with a semiconducting tri-layer MoS2 as the tunneling barrier between the ferromagnetic electrodes and the graphene channel.The spin transport in this parallel heterostructure were investigated in detail.The spin switch signal was controlled by tuning the conductivity of MoS2 with different gate voltages.When MoS2 was turned off under negative back gate voltage,the spin switch signal was clearly obtained,whereas it disappeared when MoS2 was conductive under positive back gate bias.This spin transistor showed on,subthreshold and off states when back gate voltage changed from negative to positive.This work exploited a new possibility of semiconducting 2D materials as the tunneling barrier of spin valves.展开更多
The simple gate control system which is made of traditional manual or proximity switch cannot meet the requirements of connecting with the computer monitoring system of hydropower station, it must be reformed. On the ...The simple gate control system which is made of traditional manual or proximity switch cannot meet the requirements of connecting with the computer monitoring system of hydropower station, it must be reformed. On the basis of the integrated analysis for small hydropower station, the paper discussed the singlechip as the core to realize the methods of gate automatic control system in small hydropower station. The designs for hardware and software of gate control system were introduced. And the control system was reformed from customary manual control to computer automatic control. The simulation experiment shows that this scheme is feasible.展开更多
We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power re...We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.展开更多
Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,whic...Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.展开更多
We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two（N＋1）-qubit Greenberger–Horne–Zeilinger（GHZ） states as quantum chan...We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two（N＋1）-qubit Greenberger–Horne–Zeilinger（GHZ） states as quantum channel and N qutrits as catalyser. The quantum network that implements this nonlocal（N＋2）-body gate is built entirely of local single-body and two-body gates, and has only（3N＋2） two-body gates. This result suggests that both the computational depth of quantum network and the quantum resources required to perform this nonlocal gate might be significantly reduced. This scheme can be generalized straightforwardly to implement a nonlocal N-target and M-control qubits gate.展开更多
This paper presents a very simple scheme for generating quantum controlled phase-shift gate with only one step by using the two vibrational modes of a trapped ion as the two qubits. The scheme couples two vibration de...This paper presents a very simple scheme for generating quantum controlled phase-shift gate with only one step by using the two vibrational modes of a trapped ion as the two qubits. The scheme couples two vibration degrees of freedom coupled with a suitable chosen laser excitation via the ionic states.展开更多
This paper presents a direct implementation scheme of the non-local multi-qubit controlled phase gate by using optical fibres and adiabatic passage. The smaller operation number for implementing the multi-qubit contro...This paper presents a direct implementation scheme of the non-local multi-qubit controlled phase gate by using optical fibres and adiabatic passage. The smaller operation number for implementing the multi-qubit controlled phase gate and needlessness for addressing individually save physical resource and lower the difficulties of experiment. Mean- while, the scheme is immune from some decoherence effects such as the atomic spontaneous emission and fibre loss. In principle, it is scalable.展开更多
We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as m...We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing.展开更多
An intelligent fuzzy logic inference pipeline for the control of a dc-dc buck-boost converter was designed and built using a semi-custom VLSI chip. The fuzzy linguistics describing the switching topologies of the conv...An intelligent fuzzy logic inference pipeline for the control of a dc-dc buck-boost converter was designed and built using a semi-custom VLSI chip. The fuzzy linguistics describing the switching topologies of the converter was mapped into a look-up table that was synthesized into a set of Boolean equations. A VLSI chip–a field programmable gate array (FPGA) was used to implement the Boolean equations. Features include the size of RAM chip independent of number of rules in the knowledge base, on-chip fuzzification and defuzzification, faster response with speeds over giga fuzzy logic inferences per sec (FLIPS), and an inexpensive VLSI chip. The key application areas are: 1) on-chip integrated controllers;and 2) on-chip co-integration for entire system of sensors, circuits, controllers, and detectors for building complete instrument systems.展开更多
In this paper, the control laws based on the Lyapunov stability theorem are designed for a two-level open quantum system to prepare the Hadamard gate, which is an important basic gate for the quantum computers. First,...In this paper, the control laws based on the Lyapunov stability theorem are designed for a two-level open quantum system to prepare the Hadamard gate, which is an important basic gate for the quantum computers. First, the density matrix interested in quantum system is transferred to vector formation.Then, in order to obtain a controller with higher accuracy and faster convergence rate, a Lyapunov function based on the matrix logarithm function is designed. After that, a procedure for the controller design is derived based on the Lyapunov stability theorem. Finally, the numerical simulation experiments for an amplitude damping Markovian open quantum system are performed to prepare the desired quantum gate. The simulation results show that the preparation of Hadamard gate based on the proposed control laws can achieve the fidelity up to 0.9985 for the different coupling strengths.展开更多
The simultaneous modulation of electric and optical properties in graphene is essential for advancing high-performance applications in optoelectronics.However,achieving in-situ control of multiple electric and optical...The simultaneous modulation of electric and optical properties in graphene is essential for advancing high-performance applications in optoelectronics.However,achieving in-situ control of multiple electric and optical states in graphene devices remains a challenge.Here we demonstrate a versatile and reversible electric-field control of organic-ion intercalation from bilayer to pentalayer graphene.Through simultaneous optical imaging and electric measurements,we reveal multiple physical states controlled by the layer-by-layer intercalation processes,resulting in both high transparency and high electric conductance with an increase in the number of intercalated layers.Raman spectroscopy demonstrates that the intercalated graphene maintains a high carrier concentration without lattice degradation.Moreover,Hall effect measurements reveal that the carrier density can reach approximately 1.5×10^(14)cm^(-2)per layer.The ability to synchronously control the transparency and conductance states by adjusting the number of ion-intercalated layers highlights the potential of multistate modulation for the development of advanced optoelectronic devices in two-dimensional materials.展开更多
基金This work was supported by the National Key Research and Development Program of China under Grant 2016YFA0200400 and Grant 2016YFA0302300the National Science and Technology Major Project of China under Grant 2016ZX02301001.S.Zhang would like to thank for the financial support by China Scholarship Council.In addition,she appreciated the help from Prof.Barbaras Ozyilmaz and Dr.Jiawei Liu in National University of Singapore,and the experiment was also supported by Graphene Research Centre in National University of Singapore.
文摘In this work,we have fabricated a single layer graphene spin transistor on SiO2/Si with a semiconducting tri-layer MoS2 as the tunneling barrier between the ferromagnetic electrodes and the graphene channel.The spin transport in this parallel heterostructure were investigated in detail.The spin switch signal was controlled by tuning the conductivity of MoS2 with different gate voltages.When MoS2 was turned off under negative back gate voltage,the spin switch signal was clearly obtained,whereas it disappeared when MoS2 was conductive under positive back gate bias.This spin transistor showed on,subthreshold and off states when back gate voltage changed from negative to positive.This work exploited a new possibility of semiconducting 2D materials as the tunneling barrier of spin valves.
文摘The simple gate control system which is made of traditional manual or proximity switch cannot meet the requirements of connecting with the computer monitoring system of hydropower station, it must be reformed. On the basis of the integrated analysis for small hydropower station, the paper discussed the singlechip as the core to realize the methods of gate automatic control system in small hydropower station. The designs for hardware and software of gate control system were introduced. And the control system was reformed from customary manual control to computer automatic control. The simulation experiment shows that this scheme is feasible.
文摘We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61068001 and 11264042)the Program for Chun Miao Excellent Talents of Department of Education of Jilin Province,China (Grant No. 201316)
文摘Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology.
基金Project supported by the Natural Science Foundation of Guangdong Province,China(Grant No.6029431)
文摘We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two（N＋1）-qubit Greenberger–Horne–Zeilinger（GHZ） states as quantum channel and N qutrits as catalyser. The quantum network that implements this nonlocal（N＋2）-body gate is built entirely of local single-body and two-body gates, and has only（3N＋2） two-body gates. This result suggests that both the computational depth of quantum network and the quantum resources required to perform this nonlocal gate might be significantly reduced. This scheme can be generalized straightforwardly to implement a nonlocal N-target and M-control qubits gate.
基金supported by the National Natural Science Foundation of China (Grant No 10574001)the Program of the Education Department of Anhui Province (2004kj029) of China+1 种基金the Talent Foundation of Anhui University of Chinathe Youth Program of Fuyang Teachers College of China (Grant Nos 2005LQ03 and 2005LQ04)
文摘This paper presents a very simple scheme for generating quantum controlled phase-shift gate with only one step by using the two vibrational modes of a trapped ion as the two qubits. The scheme couples two vibration degrees of freedom coupled with a suitable chosen laser excitation via the ionic states.
基金Project supported by the National Natural Science Foundation of China (Grant No 10574022)Natural Science Foundation of Fujian Province of China (Grant Nos 2007J0002 and 2006J0230)Foundation for Universities in Fujian Province (Grant No 2007F5041)
文摘This paper presents a direct implementation scheme of the non-local multi-qubit controlled phase gate by using optical fibres and adiabatic passage. The smaller operation number for implementing the multi-qubit controlled phase gate and needlessness for addressing individually save physical resource and lower the difficulties of experiment. Mean- while, the scheme is immune from some decoherence effects such as the atomic spontaneous emission and fibre loss. In principle, it is scalable.
基金Project supported by the National Natural Science Foundation (Grant Nos 10574022 and 10575022)the Funds of the Natural Science of Fujian Province, China (Grant No Z0512006)
文摘We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing.
文摘An intelligent fuzzy logic inference pipeline for the control of a dc-dc buck-boost converter was designed and built using a semi-custom VLSI chip. The fuzzy linguistics describing the switching topologies of the converter was mapped into a look-up table that was synthesized into a set of Boolean equations. A VLSI chip–a field programmable gate array (FPGA) was used to implement the Boolean equations. Features include the size of RAM chip independent of number of rules in the knowledge base, on-chip fuzzification and defuzzification, faster response with speeds over giga fuzzy logic inferences per sec (FLIPS), and an inexpensive VLSI chip. The key application areas are: 1) on-chip integrated controllers;and 2) on-chip co-integration for entire system of sensors, circuits, controllers, and detectors for building complete instrument systems.
基金supported by National Natural Science Foundation of China(61573330)Chinese Academy of Sciences(CAS)the World Academy of Sciences(TWAS)
文摘In this paper, the control laws based on the Lyapunov stability theorem are designed for a two-level open quantum system to prepare the Hadamard gate, which is an important basic gate for the quantum computers. First, the density matrix interested in quantum system is transferred to vector formation.Then, in order to obtain a controller with higher accuracy and faster convergence rate, a Lyapunov function based on the matrix logarithm function is designed. After that, a procedure for the controller design is derived based on the Lyapunov stability theorem. Finally, the numerical simulation experiments for an amplitude damping Markovian open quantum system are performed to prepare the desired quantum gate. The simulation results show that the preparation of Hadamard gate based on the proposed control laws can achieve the fidelity up to 0.9985 for the different coupling strengths.
基金supported by the National Natural Science Foundation of China(Grant Nos.12274252,and 12350404)the Basic Science Center Project of NSFC(Grant No.52388201)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302502)。
文摘The simultaneous modulation of electric and optical properties in graphene is essential for advancing high-performance applications in optoelectronics.However,achieving in-situ control of multiple electric and optical states in graphene devices remains a challenge.Here we demonstrate a versatile and reversible electric-field control of organic-ion intercalation from bilayer to pentalayer graphene.Through simultaneous optical imaging and electric measurements,we reveal multiple physical states controlled by the layer-by-layer intercalation processes,resulting in both high transparency and high electric conductance with an increase in the number of intercalated layers.Raman spectroscopy demonstrates that the intercalated graphene maintains a high carrier concentration without lattice degradation.Moreover,Hall effect measurements reveal that the carrier density can reach approximately 1.5×10^(14)cm^(-2)per layer.The ability to synchronously control the transparency and conductance states by adjusting the number of ion-intercalated layers highlights the potential of multistate modulation for the development of advanced optoelectronic devices in two-dimensional materials.
