Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with ...Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al_(2)O_(3)/GeO_(x)/Ge stack by ozone oxidation is reviewed.The GeO_(x)passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_(x)/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.展开更多
Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone....Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.展开更多
A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations....A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.展开更多
The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate m...The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.展开更多
Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has...Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.展开更多
The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices.Ambipolar two-dimensional(2D)semiconductors,characterized by their atomic-sc...The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices.Ambipolar two-dimensional(2D)semiconductors,characterized by their atomic-scale thickness and excellent gate modulation efficiency,have emerged as highly promising channel materials for such devices.However,existing methods for polarity control encounter challenges in achieving reversible modulation during device operation.Here,we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping.We demonstrate a double-gate TaO_(x)/WSe_(2)/h-BN field-effect transistor,which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaO_(x)/WSe_(2) interface.With this method,an electrically configurable complementary inverter is created with a single WSe_(2) flake,exhibiting a power consumption of just 0.7 nW.Additionally,a programmable p-n/n-p diode is realized with a>100,000-fold change in the rectification ratio.These results demonstrate the great potential of gatecontrolled bipolar charge trapping for advancing reconfigurable electronics.展开更多
基金supported by the Natural Science Foundation of Beijing Municipality(No.4214079)。
文摘Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al_(2)O_(3)/GeO_(x)/Ge stack by ozone oxidation is reviewed.The GeO_(x)passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_(x)/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.
基金Project supported by the Natural Science Foundation of Shanghai,China(Grant No.13ZR1456800)Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20120073110093)+1 种基金the National Natural Science Foundation of China(Grant Nos.11274229,11474198,61274083,61334008,11274229,11474198,11204175)DOE under DE-FG02-04ER46159
文摘Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.
基金the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045)the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814)the Natural Science Foundation of Jiangxi Province, China (Grant No. 20212BAB214047)。
文摘A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.
文摘The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.
基金supported by the Natural Science Foundation of Guangdong Province,China (No.2025A1515011654)the National Natural Science Foundation of China (No.22090053)+3 种基金the Fundamental Research Funds for National Universities,China University of Geosciences (Wuhan)support from the program of China Scholarships Council (No.202406410155)Young Elite Scientists Sponsorship Program by CAST-Doctoral Student Special Plansupport from the S&T Special Program of Huzhou (No.2024GZ07)。
文摘Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.
基金the funding support from the National Natural Science Foundation of China(Grant No.62371448,62125112,U24A20228,62204254,62301553,62401563,52270130)the Strategic Priority Research Program of the Chinese Academy of Science(XDB0520301)+3 种基金the Natural Science Foundation of Jiangsu Province(BK20243004)the Foundation Research Project of Jiangsu Province(BK20230234)the Basic Research Development Program of Suzhou(SJC2023004)the China Postdoctoral Science Foundation(2023M742556).
文摘The controllable modulation of carrier polarity in semiconductors is essential for enabling dynamic configurations in reconfigurable devices.Ambipolar two-dimensional(2D)semiconductors,characterized by their atomic-scale thickness and excellent gate modulation efficiency,have emerged as highly promising channel materials for such devices.However,existing methods for polarity control encounter challenges in achieving reversible modulation during device operation.Here,we report a novel strategy for reversibly modulating the polarity of ambipolar 2D semiconductors through gate-controlled charge trapping.We demonstrate a double-gate TaO_(x)/WSe_(2)/h-BN field-effect transistor,which can reversibly switch between n-type and p-type transport characteristics via electric-field-driven bipolar charge trapping at the TaO_(x)/WSe_(2) interface.With this method,an electrically configurable complementary inverter is created with a single WSe_(2) flake,exhibiting a power consumption of just 0.7 nW.Additionally,a programmable p-n/n-p diode is realized with a>100,000-fold change in the rectification ratio.These results demonstrate the great potential of gatecontrolled bipolar charge trapping for advancing reconfigurable electronics.
