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RF CMOS、BiCMOS的新进展(五)——移相器、RF开关、集成无源元件和相控阵
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作者 李永 赵正平 《半导体技术》 北大核心 2026年第1期1-12,共12页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成`
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Optimal control of wireless energy transfer system via decreasing frequency 被引量:2
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作者 谭林林 黄学良 +1 位作者 周亚龙 赵俊峰 《Journal of Southeast University(English Edition)》 EI CAS 2013年第3期259-263,共5页
In order to solve the multiple power extreme value point problem caused by system frequency splitting during wireless energy transmission at short distances a transmission model of the system is established.With the c... In order to solve the multiple power extreme value point problem caused by system frequency splitting during wireless energy transmission at short distances a transmission model of the system is established.With the comprehensive consideration of the resonance frequency load parameters and the coupling between coils the internal factors of frequency splitting and boundary conditions are discussed.The results show that under the condition of the fixed load the higher the natural resonance frequency the easier the frequency splitting. As the frequency splitting occurs the frequency of the maximum power transfer is no longer with the natural resonance frequency which can make the system unstable and the transfer power more difficult to control. Therefore a decreasing-frequency method is proposed to avoid the system frequency splitting. And decreasing the system resonance frequency can make the system successfully withdraw the frequency splitting area at a short-distance range.Under the fixed load condition the transmission power of the system can be increased by 400% and the transmission efficiency is reduced by only 14% which greatly improves the transmission performance of the system. 展开更多
关键词 optimal control wireless energy transfer decreasing frequency
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RF CMOS、BiCMOS的新进展(一)——低噪声放大器与接收前端 被引量:1
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作者 李永 赵正平 《半导体技术》 北大核心 2025年第8期757-772,共16页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
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RFCMOS、BiCMOS的新进展(四)——振荡器、混频器与频率综合器
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作者 李永 赵正平 《半导体技术》 北大核心 2025年第11期1093-1106,共14页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RFCMOS和RFBiCMOS集成电路(IC)具有体积小、功耗低、易于集成等... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RFCMOS和RFBiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RFCMOS和RFBiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RFIC发展的主要方面,凝练了各类RFIC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
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RF CMOS、BiCMOS的新进展(三)——功率放大器、RF信号放大器与发射机
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作者 李永 赵正平 《半导体技术》 北大核心 2025年第10期981-994,共14页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
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RF CMOS、BiCMOS的新进展(二)——射频-直流整流器与射频能量收集器
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作者 李永 赵正平 《半导体技术》 北大核心 2025年第9期885-892,共8页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
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RF-PECVD生长参数对石墨烯薄膜品质的影响
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作者 袁强华 任江枫 殷桂琴 《真空科学与技术学报》 北大核心 2025年第2期98-105,共8页
对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加... 对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加而降低,但是薄膜的厚度随着高频功率的增加而减小。在3 Torr及5 Torr的条件下,石墨烯薄膜存在着较多的边界状缺陷。甲烷/氩气流量比为10:30、生长时间为40 min时,能够生长出品质较好的石墨烯薄膜。生长温度对石墨烯薄膜的生长影响较大,在300℃时,镍基底表面无法生长出石墨烯薄膜,并且生长温度低于600℃时,都无法生长出品质较好的石墨烯薄膜。最后发现,相同的生长条件,在镍基底上生长的石墨烯薄膜厚度更小,但是铜基底生长的石墨烯薄膜缺陷更少,品质更好,这与薄膜在两种基底上不同的生长方式有关。 展开更多
关键词 射频等离子体增强化学气相沉积 双频放电 石墨烯薄膜
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无源RFID感知技术综述:从身份识别到普适智能的演进与展望
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作者 王举 荆周钰 +2 位作者 于宁平 牛晶娣 常俪琼 《西北大学学报(自然科学版)》 北大核心 2025年第6期1181-1200,共20页
普适感知是实现万物互联的关键使能技术,而传统传感方式受限于成本、功耗与部署复杂度,难以成为万物互联这一愿景的感知基石。无源射频识别(RFID)感知技术凭借其免电池、低成本、微型化及原生ID等独特优势,展现出从单一“身份标识”迈... 普适感知是实现万物互联的关键使能技术,而传统传感方式受限于成本、功耗与部署复杂度,难以成为万物互联这一愿景的感知基石。无源射频识别(RFID)感知技术凭借其免电池、低成本、微型化及原生ID等独特优势,展现出从单一“身份标识”迈向“感知末梢”的巨大潜力,为实现普适感知提供了新技术范式。该文系统回顾无源RFID感知技术的演进历程,内容涵盖其在身份管理等基础应用到空间感知、行为识别、环境感知以及生命健康监测等前沿领域的相关研究,进一步讨论了RFID感知技术在性能、智能化集成及安全隐私等方面所面临的核心挑战,并展望其作为未来物联网关键使能技术的发展前景。 展开更多
关键词 无源射频识别 物联网 无线感知
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Multi-frequency point supported LLRF front-end for CiADS wide-bandwidth application 被引量:3
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作者 Qi Chen Zheng Gao +3 位作者 Zheng-Long Zhu Zong-Heng Xue Yuan He Xian-Wu Wang 《Nuclear Science and Techniques》 SCIE CAS CSCD 2020年第3期66-73,共8页
The China initiative Accelerator Driven System,CiADS,physics design adopts 162.5 MHz,325 MHz,and 650 MHz cavities,which are driven by the corresponding radio frequency(RF)power system,requiring frequency translation f... The China initiative Accelerator Driven System,CiADS,physics design adopts 162.5 MHz,325 MHz,and 650 MHz cavities,which are driven by the corresponding radio frequency(RF)power system,requiring frequency translation front-end for the RF station.For that application,a general-purpose design front-end prototype has been developed to evaluate the multi-frequency point supported design feasibility.The difficult parts to achieve the requirements of the general-purpose design are reasonable device selection and balanced design.With a carefully selected low-noise wide-band RF mixer and amplifier to balance the performance of multi-frequency supported down-conversion,specially designed LO distribution net to increase isolation between adjacent channels,and external band-pass filter to realize expected up-conversion frequencies,high maintenance and modular front-end generalpurpose design has been implemented.Results of standard parameters show an R2 value of at least 99.991%in the range of-60-10 dBm for linearity,up to 18 dBm for P1dB,and up to 89 dBc for cross talk between adjacent channels.The phase noise spectrum is lower than 80 dBc in the range of 0-1 MHz;cumulative phase noise is 0.006°;and amplitude and phase stability are 0.022%and 0.034°,respectively. 展开更多
关键词 frequency jump rf Front-end LLrf CiADS
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Effect of driving frequency on electron heating in capacitively coupled RF argon glow discharges at low pressure 被引量:1
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作者 Tagra Samir 刘悦 +1 位作者 赵璐璐 周艳文 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期329-337,共9页
A one-dimensional(1D) fluid model on capacitively coupled radio frequency(RF) argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on e... A one-dimensional(1D) fluid model on capacitively coupled radio frequency(RF) argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on electron heating. The model is solved numerically by a finite difference method. The numerical results show that the discharge process may be divided into three stages: the growing rapidly stage, the growing slowly stage, and the steady stage. In the steady stage,the maximal electron density increases as the driving frequency increases. The results show that the discharge region has three parts: the powered electrode sheath region, the bulk plasma region and the grounded electrode sheath region. In the growing rapidly stage(at 18 μs), the results of the cycle-averaged electric field, electron temperature, electron density, and electric potentials for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are compared, respectively. Furthermore,the results of cycle-averaged electron pressure cooling, electron ohmic heating, electron heating, and electron energy loss for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are discussed, respectively. It is also found that the effect of the cycle-averaged electron pressure cooling on the electrons is to "cool" the electrons; the effect of the electron ohmic heating on the electrons is always to "heat" the electrons; the effect of the cycle-averaged electron ohmic heating on the electrons is stronger than the effect of the cycle-averaged electron pressure cooling on the electrons in the discharge region except in the regions near the electrodes. Therefore, the effect of the cycle-averaged electron heating on the electrons is to "heat" the electrons in the discharge region except in the regions near the electrodes. However, in the regions near the electrodes, the effect of the cycle-averaged electron heating on the electron is to "cool" the electrons. Finally, the space distributions of the electron pressure cooling the electron ohmic heating and the electron heating at 1/4 T, 2/4 T, 3/4 T, and 4/4 T in one RF-cycle are presented and compared. 展开更多
关键词 capacitively coupled plasmas electron heating radio frequencyrf glow discharges driving frequency
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Frequency control and pre-tuning of a large aperture 500 MHz 5-cell superconducting RF cavity 被引量:1
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作者 唐正博 马震宇 +8 位作者 侯洪涛 毛冬青 封自强 王岩 徐凯 罗琛 李正 是晶 刘建飞 《Nuclear Science and Techniques》 SCIE CAS CSCD 2014年第3期4-7,共4页
The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order t... The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order to ensure these cavities get the desired frequency and a good field flatness higher than 98%, frequency control was implemented in the manufacturing process and pre-tuning has been done using a simple pre-tuning frame based on the bead-pull pre-tuning method. Then, TM010-π mode frequency within 5 kHz from the target frequency was achieved and the field flatness reached 98.9% on the copper prototype cavity. Finally, the same procedure was applied to the niobium cavity to obtain a field flatness better than 98% which benefited the cavity performance in the vertical testing. 展开更多
关键词 频率控制 超导 细胞 高频腔 光圈 制造过程 设计目标 整定方法
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Simulation studies on two-frequency RF gun 被引量:1
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作者 李达 方文程 +5 位作者 顾强 王震 张猛 谭建豪 王超鹏 赵振堂 《Nuclear Science and Techniques》 SCIE CAS CSCD 2014年第4期1-5,共5页
Photocathode RF gun is widely used for particle accelerators as an electron source.When driving an RF electron gun at the fundamental frequency and a higher harmonic frequency simultaneously with proper field ratio an... Photocathode RF gun is widely used for particle accelerators as an electron source.When driving an RF electron gun at the fundamental frequency and a higher harmonic frequency simultaneously with proper field ratio and relative phase,it generates electron beams of ultralow emittance and a linear longitudinal phase space distribution.Such a gun provides high quality electron beam with low energy spread,small traverse emittance and high brightness.In this paper,the RF design of a 1.5 cell cavity is presented.Simulation results of beam dynamics for the two-frequency gun and a standard single-frequency RF gun are also shown in this paper.In addition,bunch compression with a two-frequency gun is explored. 展开更多
关键词 rf设计 双频率 模拟 粒子加速器 相空间分布 光电阴极 相对相位 高次谐波
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Frequency hopping in IEEE 802.15.4 to mitigate IEEE 802.11 interference and fading
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作者 JAVED Umer HE Di +1 位作者 LIU Peilin YANG Yueming 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2018年第3期445-455,共11页
In this paper, we investigate the issues of initialization and deployment of wireless sensor networks(WSNs) under IEEE 802.11 b/g interference and fading channels using frequency hopping(FH). We propose an FH algo... In this paper, we investigate the issues of initialization and deployment of wireless sensor networks(WSNs) under IEEE 802.11 b/g interference and fading channels using frequency hopping(FH). We propose an FH algorithm for WSNs, which is implemented and tested with a pair of nodes employing IPv6 over low power wireless personal area networks(6 LoWPAN) standard.The merits and demerits of the proposed FH scheme in WSNs are studied under strong IEEE 802.11 b/g interference and frequency selective fading channels. We compare the performance results of the proposed FH scheme with those obtained by single-channel radio in WSNs, and show that FH maintains very reliable data rates in the presence of adverse conditions where the single-channel radio fails. We determine a minimum center frequency offset of channels between IEEE 802.15.4 and IEEE 802.11 b/g-based networks, which guarantees the error free network operation of IEEE802.15.4 using a single channel. We design a second FH procedure comprising only four free channels(15, 20, 25, and 26) of IEEE 802.15.4 standard, and show that in the presence of nearby IEEE 802.11 b/g interference, the IEEE 802.15.4 data rate using this method is always 98% and more. 展开更多
关键词 IEEE 802.15.4 wireless sensor networks(WSNs) frequency hopping(FH) interference avoidance COEXISTENCE
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Cactus-Shaped Frequency Reconfigurable Antenna for Sub 10 GHz Wireless Applications
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作者 Muhammad Irfan Wasi Ur Rehman Khan +10 位作者 Sadiq Ullah Naveed Mufti Muhammad Fawad Khan Rizwan Ullah Usman Ali Fazal Muhammad Faisal Althobiani Mohammed Alshareef Shadi Alghaffari Saifur Rehman V.R.Shamji 《Computer Systems Science & Engineering》 SCIE EI 2023年第6期2693-2704,共12页
This paper presents,a novel cactus shaped frequency reconfigurable antenna for sub 10 GHz wireless applications.PIN diode is utilized as an electrical switch to achieve reconfigurability,enabling operation in four dif... This paper presents,a novel cactus shaped frequency reconfigurable antenna for sub 10 GHz wireless applications.PIN diode is utilized as an electrical switch to achieve reconfigurability,enabling operation in four different frequency ranges.In the switch ON state mode,the antenna supports 2177-3431 and 6301-8467 MHz ranges.Alternatively,the antenna resonates within 2329-3431 and 4951-6718 MHz while in the OFF state mode.Radiation efficiency values,ranging from 68%to 84%,and gain values,ranging from 1.6 to 4 dB,in the operating frequency bands.the proposed antenna satisfy the practical requirements and expectations.The overall planner dimensions of the proposed antenna model is 40×21 mm^(2).Moreover,the measurement results from the prototype support the simulation results.Based on the frequency ranges supported by the antenna,it can be used for multiple wireless standards and services,including Worldwide interoperability and Microwave Access(WiMAX),Wireless Fidelity(Wi-Fi),Bluetooth,Long Term Evolution(LTE)and satellite communications.This increases its applicability for use in mobile terminals. 展开更多
关键词 ANTENNA frequency reconfigurable PIN diode SWITCH wireless technology
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Designing Wireless Charger Circuit for Hearing Aids Using Radio Frequency Waves
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作者 Seyed Ataaldin Mahmoudi Nejad Naser Safdarian 《Journal of Biomedical Science and Engineering》 2014年第11期948-962,共15页
In this paper, an attempt has been made to produce a recipient system of wireless charge for a simple hearing aid so that electrical signal would be generated through detecting and receiving radio frequency waves (RF)... In this paper, an attempt has been made to produce a recipient system of wireless charge for a simple hearing aid so that electrical signal would be generated through detecting and receiving radio frequency waves (RF). The purpose of this design is to receive wireless charge for hearing aids and basically for any electronic device which is not required to a high energy for being setup. In this study, it has been demonstrated that as the amount of radio receiving energy increases, distance of receiver from antenna should be decreased;otherwise, either maximum amount of the receiving energy, or signal power density of the transmitter should be increased. Since it is impossible to be performed, it is decided to set up an energy receiving system constructed by rectenna and charge Circuit and to adjust their parameters to provide energy requirements for a device with low-power consumption. In this paper, different components of an energy receiving system from radio frequency band have been mentioned and a diagram block has been suggested. Subsequently, input impedance of designed antenna has been adjusted by provided relations. This impedance should be adjusted with the total impedance of regarded hearing aid Circuit by which the highest amount of received signal power is transferred to the battery of hearing aids. Received signal is converted to a dc voltage by rectifier diode. Finally, by applying a voltage regulator which has been designed using a common-collector amplifier not only the output voltage is kept constant, but the power is also strengthened. The battery of the hearing aids will be charged using the obtained power and voltage. 展开更多
关键词 Radio frequency WAVES (rf) RECTENNA Spiral ANTENNA Charge CIRCUIT IMPEDANCE Adjustment or IMPEDANCE Matching Array ANTENNA Regulator CIRCUIT Hearing-Aid CIRCUIT
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Wireless Energy Harvesting Using Rectenna Integrated with Voltage Multiplier Circuit at 2.4 GHz Operating Frequency
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作者 Waqas Ali Hafiz Subbyal +1 位作者 Liguo Sun Shahana Shamoon 《Journal of Power and Energy Engineering》 2022年第3期22-34,共13页
In this paper, we utilized villared rectifier technique to harvest wireless energy to overcome previously used RF-WEH rectenna. Our design focuses mainly on a multiple-stage Villard voltage multiplier model to rectify... In this paper, we utilized villared rectifier technique to harvest wireless energy to overcome previously used RF-WEH rectenna. Our design focuses mainly on a multiple-stage Villard voltage multiplier model to rectify the output voltage of the rectenna and transferred it to a dc load. As a starting point, optimization and parameter analysis offer a novel and small antenna for the 2.45 GHz ISM band that precisely matched. Moreover, the fabricated prototype has measured and simulated results have confirmed the antenna’s accuracy in the reflection coefficient. Second, a highly efficient antenna may effectively harvest the electrical energy by combining with the two-stage voltage multiplier circuit presented at the ISM band. Furthermore, the proposed rectenna has the optimum performance compared to state of art rectennas in terms of efficiency, power range, and impedance bandwidth showing pronounced achievement and increasing the DC output power significantly. The prototype is fabricated and experimentally tested to confirm the concept. Measurement results show that the proposed rectenna can be used for RF energy harvesting applications. 展开更多
关键词 Energy Harvesting Radio frequency RECTENNA Industrial SCIENTIFIC Medical(ism) Band wireless Power Transfer
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A Radio⁃Frequency Loop Resonator for Short⁃Range Wireless Power Transmission
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作者 WANG Xin LI Wenbo LU Mingyu 《ZTE Communications》 2022年第2期43-47,共5页
A microstrip loop resonator loaded with a lumped capacitor is proposed for short-range wireless power transmission applications.The overall physical dimensions of the proposed loop resonator configuration are as small... A microstrip loop resonator loaded with a lumped capacitor is proposed for short-range wireless power transmission applications.The overall physical dimensions of the proposed loop resonator configuration are as small as 3 cm by 3 cm.Power transmission efficiency of greater than 80%is achieved with a power transmission distance smaller than 5 mm via the strong coupling between two loop resonators around 1 GHz,as demonstrated by simulations and measurements.Experimental results also show that the power transmission performance is insensitive to various geometrical misalignments.The numerical and experimental results of this paper reveal a bandwidth of more than 50 MHz within which the power transmission efficiency is above 80%.As a result,the proposed microstrip loop resonator has the potential to accomplish efficient wireless power transmission and high-speed(higher than 10 Mbit/s)wireless communication simultaneously. 展开更多
关键词 loop resonator lumped capacitive loading radio frequency short-range wireless power transmission
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Fluke 9640A RF Reference Source combines level precision,dynamic range,frequency capability in a single instrument
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作者 Stream lines workload enables automationof calibration procedures with MET/CAL(Plus Calibration Measurement Software 《国外电子测量技术》 2007年第1期81-81,共1页
关键词 Source rf Fluke 9640A rf Reference Source combines level precision dynamic range frequency capability in a single instrument
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基于多频超声和GWO-RF算法的绝缘油击穿电压预测研究 被引量:1
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作者 俞华 刘宏 +2 位作者 王璇 梁基重 李帅 《绝缘材料》 北大核心 2025年第1期130-136,共7页
绝缘油是电抗器内部重要的绝缘介质,击穿电压是评估其绝缘特性的关键指标,与绝缘油的品质状态密切相关。本文共选取155组电抗器绝缘油进行实验,分别进行击穿电压的测定和多频超声信号在油样中传播衰减后信号的采集,分析多频超声声学参... 绝缘油是电抗器内部重要的绝缘介质,击穿电压是评估其绝缘特性的关键指标,与绝缘油的品质状态密切相关。本文共选取155组电抗器绝缘油进行实验,分别进行击穿电压的测定和多频超声信号在油样中传播衰减后信号的采集,分析多频超声声学参数和击穿电压之间的幅频响应、相频响应之间的关系,并基于多频超声检测技术提出结合灰狼优化算法(grey wolf optimizer,GWO)优化随机森林算法(random forest algorithm,RF)的击穿电压预测方法。结果表明:GWO-RF绝缘油击穿电压预测模型的预测值与实际值的平均相对误差为4.04%,预测准确率达到95.96%,相较于优化前的RF绝缘油击穿电压预测模型准确率提升了20.25%。结合多频超声检测技术和GWO-RF建立的并联电抗器绝缘油击穿电压预测模型,对击穿电压的预测具有可行性。 展开更多
关键词 绝缘油 击穿电压 多频超声 GWO-rf
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Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
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作者 吕凯 陈静 +4 位作者 罗杰馨 何伟伟 黄建强 柴展 王曦 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期605-608,共4页
The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) de... The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ~ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance. 展开更多
关键词 silicon-on-insulator(SOI) back gate bias tunnel diode body contact radio-frequency(rf)
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