期刊文献+
共找到4,193篇文章
< 1 2 210 >
每页显示 20 50 100
RF CMOS、BiCMOS的新进展(五)——移相器、RF开关、集成无源元件和相控阵
1
作者 李永 赵正平 《半导体技术》 北大核心 2026年第1期1-12,共12页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成`
原文传递
RF CMOS、BiCMOS的新进展(一)——低噪声放大器与接收前端 被引量:1
2
作者 李永 赵正平 《半导体技术》 北大核心 2025年第8期757-772,共16页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
原文传递
RFCMOS、BiCMOS的新进展(四)——振荡器、混频器与频率综合器
3
作者 李永 赵正平 《半导体技术》 北大核心 2025年第11期1093-1106,共14页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RFCMOS和RFBiCMOS集成电路(IC)具有体积小、功耗低、易于集成等... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RFCMOS和RFBiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RFCMOS和RFBiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RFIC发展的主要方面,凝练了各类RFIC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
原文传递
RF CMOS、BiCMOS的新进展(三)——功率放大器、RF信号放大器与发射机
4
作者 李永 赵正平 《半导体技术》 北大核心 2025年第10期981-994,共14页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
原文传递
RF CMOS、BiCMOS的新进展(二)——射频-直流整流器与射频能量收集器
5
作者 李永 赵正平 《半导体技术》 北大核心 2025年第9期885-892,共8页
当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成... 当今信息社会已进入通用人工智能时代,大数据呈指数规律增长,不但要求数据处理速度高速增长,同时也要求数据的传输带宽更宽,推动数据载波的频率向射频(RF)的高端发展。Si基RF CMOS和RF BiCMOS集成电路(IC)具有体积小、功耗低、易于集成等优点,相应呈现高速发展的态势。综述了Si基RF CMOS和RF BiCMOS的最新进展和发展态势,主要包括低噪声放大器与接收前端,射频-直流整流器与射频能量收集器,功率放大器、RF信号放大器与发射机,振荡器、混频器与频率综合器,移相器、开关、集成无源元件和相控阵,RF专用集成电路(ASIC)和微系统集成等七个RF IC发展的主要方面,凝练了各类RF IC的发展趋势和关键技术创新点。 展开更多
关键词 射频(rf)CMOS rf BiCMOS 放大器 收/发机 rf能量收集器 压控振荡器 频率综合器 移相器 相控阵 微系统集成
原文传递
RF-PECVD生长参数对石墨烯薄膜品质的影响
6
作者 袁强华 任江枫 殷桂琴 《真空科学与技术学报》 北大核心 2025年第2期98-105,共8页
对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加... 对比不同工艺参数条件下生长的石墨烯薄膜的形貌和品质,分别研究了高频功率、放电气压、气体流量比、生长时间、生长温度以及基底种类对双频放电的RF-PECVD制备的石墨烯薄膜品质影响。实验结果表明,石墨烯的缺陷程度随着高频功率的增加而降低,但是薄膜的厚度随着高频功率的增加而减小。在3 Torr及5 Torr的条件下,石墨烯薄膜存在着较多的边界状缺陷。甲烷/氩气流量比为10:30、生长时间为40 min时,能够生长出品质较好的石墨烯薄膜。生长温度对石墨烯薄膜的生长影响较大,在300℃时,镍基底表面无法生长出石墨烯薄膜,并且生长温度低于600℃时,都无法生长出品质较好的石墨烯薄膜。最后发现,相同的生长条件,在镍基底上生长的石墨烯薄膜厚度更小,但是铜基底生长的石墨烯薄膜缺陷更少,品质更好,这与薄膜在两种基底上不同的生长方式有关。 展开更多
关键词 射频等离子体增强化学气相沉积 双频放电 石墨烯薄膜
原文传递
Multi-frequency point supported LLRF front-end for CiADS wide-bandwidth application 被引量:3
7
作者 Qi Chen Zheng Gao +3 位作者 Zheng-Long Zhu Zong-Heng Xue Yuan He Xian-Wu Wang 《Nuclear Science and Techniques》 SCIE CAS CSCD 2020年第3期66-73,共8页
The China initiative Accelerator Driven System,CiADS,physics design adopts 162.5 MHz,325 MHz,and 650 MHz cavities,which are driven by the corresponding radio frequency(RF)power system,requiring frequency translation f... The China initiative Accelerator Driven System,CiADS,physics design adopts 162.5 MHz,325 MHz,and 650 MHz cavities,which are driven by the corresponding radio frequency(RF)power system,requiring frequency translation front-end for the RF station.For that application,a general-purpose design front-end prototype has been developed to evaluate the multi-frequency point supported design feasibility.The difficult parts to achieve the requirements of the general-purpose design are reasonable device selection and balanced design.With a carefully selected low-noise wide-band RF mixer and amplifier to balance the performance of multi-frequency supported down-conversion,specially designed LO distribution net to increase isolation between adjacent channels,and external band-pass filter to realize expected up-conversion frequencies,high maintenance and modular front-end generalpurpose design has been implemented.Results of standard parameters show an R2 value of at least 99.991%in the range of-60-10 dBm for linearity,up to 18 dBm for P1dB,and up to 89 dBc for cross talk between adjacent channels.The phase noise spectrum is lower than 80 dBc in the range of 0-1 MHz;cumulative phase noise is 0.006°;and amplitude and phase stability are 0.022%and 0.034°,respectively. 展开更多
关键词 frequency jump rf Front-end LLrf CiADS
在线阅读 下载PDF
Design and Measurement of Microwave Absorbers Comprising Resistive Frequency Selective Surfaces 被引量:2
8
作者 Meng Zhang Tian Jiang Yijun Feng 《Journal of Electromagnetic Analysis and Applications》 2014年第8期203-208,共6页
Frequency selective surfaces (FSSs) have been successfully used in constructing microwave absorbers which demonstrate the ability of modifying and improving its absorbing performances. In this paper, microwave absorbe... Frequency selective surfaces (FSSs) have been successfully used in constructing microwave absorbers which demonstrate the ability of modifying and improving its absorbing performances. In this paper, microwave absorber based on ferromagnetic nano-films has been proposed and investigated with a structure similar to that of the Salisbury screen except that the resistive sheet is replaced by FSS of square patch array of the nano-film. We have explored the FSS absorber from three aspects: equivalent circuit model, electromagnetic full-wave simulation and the actual sample measurement. By carefully tuning the patch size, the thickness of the dielectric spacer and the specification of the ferromagnetic nano-film, we obtain the optimized performance of broadband microwave absorbing. Due to the light weight of the nano-films, the proposed absorbers can achieve an ultra-low surface density less than 0.25 kg/m2. 展开更多
关键词 Salisbury SCREEN frequency SELECTIVE Surface EQUIVALENT CIRCUIT Model ELECTRON Beam EVAPORATION
暂未订购
Effect of driving frequency on electron heating in capacitively coupled RF argon glow discharges at low pressure 被引量:1
9
作者 Tagra Samir 刘悦 +1 位作者 赵璐璐 周艳文 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期329-337,共9页
A one-dimensional(1D) fluid model on capacitively coupled radio frequency(RF) argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on e... A one-dimensional(1D) fluid model on capacitively coupled radio frequency(RF) argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on electron heating. The model is solved numerically by a finite difference method. The numerical results show that the discharge process may be divided into three stages: the growing rapidly stage, the growing slowly stage, and the steady stage. In the steady stage,the maximal electron density increases as the driving frequency increases. The results show that the discharge region has three parts: the powered electrode sheath region, the bulk plasma region and the grounded electrode sheath region. In the growing rapidly stage(at 18 μs), the results of the cycle-averaged electric field, electron temperature, electron density, and electric potentials for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are compared, respectively. Furthermore,the results of cycle-averaged electron pressure cooling, electron ohmic heating, electron heating, and electron energy loss for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are discussed, respectively. It is also found that the effect of the cycle-averaged electron pressure cooling on the electrons is to "cool" the electrons; the effect of the electron ohmic heating on the electrons is always to "heat" the electrons; the effect of the cycle-averaged electron ohmic heating on the electrons is stronger than the effect of the cycle-averaged electron pressure cooling on the electrons in the discharge region except in the regions near the electrodes. Therefore, the effect of the cycle-averaged electron heating on the electrons is to "heat" the electrons in the discharge region except in the regions near the electrodes. However, in the regions near the electrodes, the effect of the cycle-averaged electron heating on the electron is to "cool" the electrons. Finally, the space distributions of the electron pressure cooling the electron ohmic heating and the electron heating at 1/4 T, 2/4 T, 3/4 T, and 4/4 T in one RF-cycle are presented and compared. 展开更多
关键词 capacitively coupled plasmas electron heating radio frequencyrf glow discharges driving frequency
原文传递
Frequency control and pre-tuning of a large aperture 500 MHz 5-cell superconducting RF cavity 被引量:1
10
作者 唐正博 马震宇 +8 位作者 侯洪涛 毛冬青 封自强 王岩 徐凯 罗琛 李正 是晶 刘建飞 《Nuclear Science and Techniques》 SCIE CAS CSCD 2014年第3期4-7,共4页
The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order t... The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order to ensure these cavities get the desired frequency and a good field flatness higher than 98%, frequency control was implemented in the manufacturing process and pre-tuning has been done using a simple pre-tuning frame based on the bead-pull pre-tuning method. Then, TM010-π mode frequency within 5 kHz from the target frequency was achieved and the field flatness reached 98.9% on the copper prototype cavity. Finally, the same procedure was applied to the niobium cavity to obtain a field flatness better than 98% which benefited the cavity performance in the vertical testing. 展开更多
关键词 频率控制 超导 细胞 高频腔 光圈 制造过程 设计目标 整定方法
在线阅读 下载PDF
Simulation studies on two-frequency RF gun 被引量:1
11
作者 李达 方文程 +5 位作者 顾强 王震 张猛 谭建豪 王超鹏 赵振堂 《Nuclear Science and Techniques》 SCIE CAS CSCD 2014年第4期1-5,共5页
Photocathode RF gun is widely used for particle accelerators as an electron source.When driving an RF electron gun at the fundamental frequency and a higher harmonic frequency simultaneously with proper field ratio an... Photocathode RF gun is widely used for particle accelerators as an electron source.When driving an RF electron gun at the fundamental frequency and a higher harmonic frequency simultaneously with proper field ratio and relative phase,it generates electron beams of ultralow emittance and a linear longitudinal phase space distribution.Such a gun provides high quality electron beam with low energy spread,small traverse emittance and high brightness.In this paper,the RF design of a 1.5 cell cavity is presented.Simulation results of beam dynamics for the two-frequency gun and a standard single-frequency RF gun are also shown in this paper.In addition,bunch compression with a two-frequency gun is explored. 展开更多
关键词 rf设计 双频率 模拟 粒子加速器 相空间分布 光电阴极 相对相位 高次谐波
在线阅读 下载PDF
LOW-FREQUENCY LOW-NOISE CIRCUITS DESIGN USING AN E_n-I_n MODEL 被引量:1
12
作者 Wang Jun (China Academy of Engineering and Physics, Chengdu 610003)Dai Yisong(Jilin University of Technology, Changchun 130025) 《Journal of Electronics(China)》 1999年第1期58-65,共8页
In view of the limitations of a Rn-Gn model in the low frequency range and the defects of an En-In model in common use now, this paper builds a complete En-In model according to the theory of random harmonic. The para... In view of the limitations of a Rn-Gn model in the low frequency range and the defects of an En-In model in common use now, this paper builds a complete En-In model according to the theory of random harmonic. The parameters for the low-noise design such as the equivalent input noisy voltage Ens, the optimum source impedance Zsopt and the minimum noise figure Fmin can be calculated accurately by using this En-In model because it considers the coherence between the noise sources fully. Moreover, this paper points out that it will cause the maximum 30% miscalculation when neglecting the effects of the correlation coefficient 7. Using the series-series circuits as an example, this paper discusses the methods for the En-In noise analysis of electronic circuits preliminarily and demonstrates its correctness through the comparison between the simulated and measured results of the minimum noise figure Fmin of a single current series negative feedback circuit. 展开更多
关键词 En-In MODEL LOW-frequency circuits LOW-NOISE DESIGN
在线阅读 下载PDF
Analysis of frequency selective surface absorbers via a novel equivalent circuit method
13
作者 刘立国 吴微微 +2 位作者 莫锦军 付云起 袁乃昌 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期486-490,共5页
An equivalent circuit (EC) method for absorbers design is proposed in this paper. Without using full-wave analysis, the EC method can predict the performance of the absorbers. This method is employed to synthesize b... An equivalent circuit (EC) method for absorbers design is proposed in this paper. Without using full-wave analysis, the EC method can predict the performance of the absorbers. This method is employed to synthesize broadband absorbers by inserting the resistors respectively into the single-and double-square loops structures, then two different prototypes with broadband absorbing frequency bands are manufactured and measured. By comparisons with the results both by using the full-wave analysis and by the measurements, the correctness of the new EC method is verified. Some factors which affect the absorbing bandwidth are also investigated. Due to its fast and accurate characteristics, the EC method which can be theoretically applied to arbitrary FSS is a good candidate for broadband design of the absorbers. 展开更多
关键词 frequency selective surfaces equivalent circuit ABSORBER
原文传递
Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio Frequency Circuits
14
作者 Olivier Valorge Fengyuan Sun +3 位作者 Jean-Etienne Lorival Mohamed Abouelatta-Ebrahim Francis Calmon Christian Gontrand 《Circuits and Systems》 2012年第2期126-135,共10页
3D chip stacking is considered known to overcome conventional 2D-IC issues, using through silicon vias to ensure vertical signal transmission. From any point source, embedded or not, we calculate the impedance spread ... 3D chip stacking is considered known to overcome conventional 2D-IC issues, using through silicon vias to ensure vertical signal transmission. From any point source, embedded or not, we calculate the impedance spread out;our ultimate goal will to study substrate noise via impedance field method. For this, our approach is twofold: a compact Green function or a Transmission Line Model over a multi-layered substrate is derived by solving Poisson’s equation analytically. The Discrete Cosine Transform (DCT) and its variations are used for rapid evaluation. Using this technique, the substrate coupling and loss in IC’s can be analyzed. We implement our algorithm in MATLAB;it permits to extract impedances between any pair of embedded contacts. Comparisons are performed using finite element methods. 展开更多
关键词 Through Silicon Via (TSV) Green’s Function Transmission Line Model Radio frequency (rf) Transfer IMPEDANCE EXTRACTION
在线阅读 下载PDF
Fluke 9640A RF Reference Source combines level precision,dynamic range,frequency capability in a single instrument
15
作者 Stream lines workload enables automationof calibration procedures with MET/CAL(Plus Calibration Measurement Software 《国外电子测量技术》 2007年第1期81-81,共1页
关键词 Source rf Fluke 9640A rf Reference Source combines level precision dynamic range frequency capability in a single instrument
在线阅读 下载PDF
Insights into Three-Dimensional Radiofrequency Circuits Connections
16
作者 Rabah Dahmani Olivier Valorge +5 位作者 Fengyuan Sun Samir Labiod Francis Calmon Saida Latreche Ian O'Connor Christian Gontrand 《Computer Technology and Application》 2011年第6期456-470,共15页
The authors state briefly the possibility of various simulators to handle propagation of electromagnetic waves along some interconnections, in 3D RF (Radio Frequency) circuits. The studies are first derived in the t... The authors state briefly the possibility of various simulators to handle propagation of electromagnetic waves along some interconnections, in 3D RF (Radio Frequency) circuits. The studies are first derived in the time domain: a Finite-Difference Time-Domain method is applied, taking spectra via FFTs (Fast Fourier Transform) as post-processors. Electric and magnetic field distributions, pulse propagations along stripline structures or vias are highlighted. The scattering parameters for various cases are extracted and compared. Some original issue of this work is an insight on crosstalk or shielding phenomena between lines. 展开更多
关键词 Maxwell's equations radio frequency rf numerical methods shielding effects through silicon via.
在线阅读 下载PDF
基于多频超声和GWO-RF算法的绝缘油击穿电压预测研究 被引量:1
17
作者 俞华 刘宏 +2 位作者 王璇 梁基重 李帅 《绝缘材料》 北大核心 2025年第1期130-136,共7页
绝缘油是电抗器内部重要的绝缘介质,击穿电压是评估其绝缘特性的关键指标,与绝缘油的品质状态密切相关。本文共选取155组电抗器绝缘油进行实验,分别进行击穿电压的测定和多频超声信号在油样中传播衰减后信号的采集,分析多频超声声学参... 绝缘油是电抗器内部重要的绝缘介质,击穿电压是评估其绝缘特性的关键指标,与绝缘油的品质状态密切相关。本文共选取155组电抗器绝缘油进行实验,分别进行击穿电压的测定和多频超声信号在油样中传播衰减后信号的采集,分析多频超声声学参数和击穿电压之间的幅频响应、相频响应之间的关系,并基于多频超声检测技术提出结合灰狼优化算法(grey wolf optimizer,GWO)优化随机森林算法(random forest algorithm,RF)的击穿电压预测方法。结果表明:GWO-RF绝缘油击穿电压预测模型的预测值与实际值的平均相对误差为4.04%,预测准确率达到95.96%,相较于优化前的RF绝缘油击穿电压预测模型准确率提升了20.25%。结合多频超声检测技术和GWO-RF建立的并联电抗器绝缘油击穿电压预测模型,对击穿电压的预测具有可行性。 展开更多
关键词 绝缘油 击穿电压 多频超声 GWO-rf
在线阅读 下载PDF
Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
18
作者 吕凯 陈静 +4 位作者 罗杰馨 何伟伟 黄建强 柴展 王曦 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期605-608,共4页
The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) de... The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ~ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance. 展开更多
关键词 silicon-on-insulator(SOI) back gate bias tunnel diode body contact radio-frequency(rf)
原文传递
基于射频测试技术的RF集成电路性能研究
19
作者 李华 沈丹丹 《移动信息》 2025年第6期10-12,共3页
射频集成电路是现代无线通信系统的核心,主要负责信号的处理与传输,其性能直接影响系统的稳定性.射频测试技术通过精确测量增益、S参数、噪声系数等指标,评估集成电路的性能.文中基于射频测试技术,详细分析了RF集成电路的性能测试方法,... 射频集成电路是现代无线通信系统的核心,主要负责信号的处理与传输,其性能直接影响系统的稳定性.射频测试技术通过精确测量增益、S参数、噪声系数等指标,评估集成电路的性能.文中基于射频测试技术,详细分析了RF集成电路的性能测试方法,涵盖非线性行为深度解析、S参数多维提取、增益压缩实时建模及多维噪声抑制优化等关键环节,并通过实验对比传统方法验证了该测试技术的有效性. 展开更多
关键词 射频测试技术 rf集成电路 性能分析
在线阅读 下载PDF
基于RF-PECVD的大口径红外元件DLC膜层制备工艺研究
20
作者 张天行 李忠 +2 位作者 徐旭 薛俊 熊涛 《光学与光电技术》 2025年第3期136-142,共7页
为解决大口径红外元件类金刚石(Diamond-Like Carbon,DLC)膜层的镀膜工艺难题,满足长焦距、大视场光学系统的技术需求,采用射频等离子增强化学气相沉积(Radio Frequency Plasma Enhanced Chemical Vapor Deposition,RF-PECVD)制备工艺方... 为解决大口径红外元件类金刚石(Diamond-Like Carbon,DLC)膜层的镀膜工艺难题,满足长焦距、大视场光学系统的技术需求,采用射频等离子增强化学气相沉积(Radio Frequency Plasma Enhanced Chemical Vapor Deposition,RF-PECVD)制备工艺方法,基于容性耦合等离子体驻波效应及趋肤效应机理,在大口径红外元件基底制备了红外类金刚石膜。通过优化改进等离子体电场均匀性,有效降低了膜层应力并提升了其可靠性及膜层厚度均匀性。依据光学薄膜元件环境试验要求进行了高温、低温及湿热等试验,试验后膜层未出现膜层起皮、褶皱及脱落现象。结果表明,大口径红外类金刚石膜具备良好抗温度冲击及腐蚀等特性,满足光学元件镀膜的正常需求,进一步拓展了大口径DLC薄膜的制备工艺能力。 展开更多
关键词 大口径 红外元件 类金刚石膜 制备工艺 射频等离子增强化学气相沉积
原文传递
上一页 1 2 210 下一页 到第
使用帮助 返回顶部