Nanoelectromechanical(NEM)switches have the advantages of zero leakage current,abrupt switching characteristics,and harsh environmental capabilities.This makes them a promising component for digital computing circuits...Nanoelectromechanical(NEM)switches have the advantages of zero leakage current,abrupt switching characteristics,and harsh environmental capabilities.This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important.However,to make NEM-based logic circuits commercially viable,NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities,which remains a big challenge.Here,we demonstrate the use of a commercial silicon-on-insulator(SOI)foundry platform(iSiPP50G by IMEC,Belgium)to implement monolithically integrated silicon(Si)NEM switches.Using this SOI foundry platform featuring sub-200 nm lithography technology,we implemented two different types of NEM switches:(1)a volatile 3-terminal(3-T)NEM switch with a low actuation voltage of 5.6 V and(2)a bi-stable 7-terminal(7-T)NEM switch,featuring either volatile or non-volatile switching behavior,depending on the switch contact design.The experimental results presented here show how an established CMOS-compatible SOI foundry process can be utilized to realize highly integrated Si NEM switches,removing a significant barrier towards scalable manufacturing of high performance and high-density NEMbased programmable logic circuits and non-volatile memories.展开更多
A numerical model of foundry filling process was established based on the smoothed particle hydrodynamics（SPH）method.To mimic the constraints that the solid mold prescribes on the filling fluid,a composite treatment...A numerical model of foundry filling process was established based on the smoothed particle hydrodynamics（SPH）method.To mimic the constraints that the solid mold prescribes on the filling fluid,a composite treatment to the solid boundaries is elaborately designed.On solid boundary surfaces,boundary particles were set,which exert Lennard-Jones force on approaching fluid particles;inside the solid mold,ghost particles were arranged to complete the compact domain of near-boundary fluid particles.Water analog experiments were conducted in parallel with the model simulations.Very good agreement between experimental and simulation results demonstrates the success of model development.展开更多
基金the European Union’s Horizon 2020 research and innovation program under grant No.780283(MORPHIC),101070332(PHORMIC),871740(ZeroAMP)the i-EDGE project,funded by the European Union(No.101092018)+1 种基金the Swiss State Secretariat for Education,Research and Innovation(SERI No.10061130)UK Research and Innovation(UKRI No.10063023).
文摘Nanoelectromechanical(NEM)switches have the advantages of zero leakage current,abrupt switching characteristics,and harsh environmental capabilities.This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important.However,to make NEM-based logic circuits commercially viable,NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities,which remains a big challenge.Here,we demonstrate the use of a commercial silicon-on-insulator(SOI)foundry platform(iSiPP50G by IMEC,Belgium)to implement monolithically integrated silicon(Si)NEM switches.Using this SOI foundry platform featuring sub-200 nm lithography technology,we implemented two different types of NEM switches:(1)a volatile 3-terminal(3-T)NEM switch with a low actuation voltage of 5.6 V and(2)a bi-stable 7-terminal(7-T)NEM switch,featuring either volatile or non-volatile switching behavior,depending on the switch contact design.The experimental results presented here show how an established CMOS-compatible SOI foundry process can be utilized to realize highly integrated Si NEM switches,removing a significant barrier towards scalable manufacturing of high performance and high-density NEMbased programmable logic circuits and non-volatile memories.
基金Project(2011006B)supported by the Open Project of National Engineering Research Center of Near-Shape Forming for Metallic Materials,ChinaProject(FJ)supported by the CAS"100 talents"Plan
文摘A numerical model of foundry filling process was established based on the smoothed particle hydrodynamics（SPH）method.To mimic the constraints that the solid mold prescribes on the filling fluid,a composite treatment to the solid boundaries is elaborately designed.On solid boundary surfaces,boundary particles were set,which exert Lennard-Jones force on approaching fluid particles;inside the solid mold,ghost particles were arranged to complete the compact domain of near-boundary fluid particles.Water analog experiments were conducted in parallel with the model simulations.Very good agreement between experimental and simulation results demonstrates the success of model development.
