The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of ...The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of a PIN diode decreases as the frequency increases. In this paper, the affection of skin effect to forward bias equivalent resistance is considered and an analytic expression of the equivalent resistance of the region I is presented. In result, the forward bias resistance of a PIN diode at microwave frequencies is much higher than that at DC and low frequencies. It is necessary, therefore, to consider the skin effect of PIN diodes in high frequency applications.展开更多
Boron-oxygen defects can cause serious lightinduced degradation （LID） of commercial solar cells based on the boron-doped crystalline silicon （c-Si）, which are formed under the injection of excess carriers induced ...Boron-oxygen defects can cause serious lightinduced degradation （LID） of commercial solar cells based on the boron-doped crystalline silicon （c-Si）, which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field （A1-BSF） solar cells and passivated emitter and rear contact （PERC） solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.展开更多
文摘The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of a PIN diode decreases as the frequency increases. In this paper, the affection of skin effect to forward bias equivalent resistance is considered and an analytic expression of the equivalent resistance of the region I is presented. In result, the forward bias resistance of a PIN diode at microwave frequencies is much higher than that at DC and low frequencies. It is necessary, therefore, to consider the skin effect of PIN diodes in high frequency applications.
基金Acknowledgements This work was supported by the National Natural Science Foundation of China （Grant Nos. 51532007, 61574124 and 51472219）, the Program for Innovative Research Team in University of Ministry of Education of China （IRT13R54）, and State Key Laboratory of Optoelectronic Materials and Technologies （Sun Yat-sen University）.
文摘Boron-oxygen defects can cause serious lightinduced degradation （LID） of commercial solar cells based on the boron-doped crystalline silicon （c-Si）, which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field （A1-BSF） solar cells and passivated emitter and rear contact （PERC） solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.
