To deal with colored noise and unexpected load disturbance in identification of industrial processes with time delay, a bias-eliminated iterative least-squares(ILS) identification method is proposed in this paper to e...To deal with colored noise and unexpected load disturbance in identification of industrial processes with time delay, a bias-eliminated iterative least-squares(ILS) identification method is proposed in this paper to estimate the output error model parameters and time delay simultaneously. An extended observation vector is constructed to establish an ILS identification algorithm. Moreover, a variable forgetting factor is introduced to enhance the convergence rate of parameter estimation. For consistent estimation, an instrumental variable method is given to deal with the colored noise. The convergence and upper bound error of parameter estimation are analyzed. Two illustrative examples are used to show the effectiveness and merits of the proposed method.展开更多
Properties that are similar to the memory and learning functions in biological systems have been observed and reported in the experimental studies of memristors fabricated by different materials. These properties incl...Properties that are similar to the memory and learning functions in biological systems have been observed and reported in the experimental studies of memristors fabricated by different materials. These properties include the forgetting effect, the transition from short-term memory（STM） to long-term memory（LTM）, learning-experience behavior, etc. The mathematical model of this kind of memristor would be very important for its theoretical analysis and application design.In our analysis of the existing memristor model with these properties, we find that some behaviors of the model are inconsistent with the reported experimental observations. A phenomenological memristor model is proposed for this kind of memristor. The model design is based on the forgetting effect and STM-to-LTM transition since these behaviors are two typical properties of these memristors. Further analyses of this model show that this model can also be used directly or modified to describe other experimentally observed behaviors. Simulations show that the proposed model can give a better description of the reported memory and learning behaviors of this kind of memristor than the existing model.展开更多
基金Supported by the National Thousand Talents Program of Chinathe National Natural Science Foundation of China(61473054)the Fundamental Research Funds for the Central Universities of China
文摘To deal with colored noise and unexpected load disturbance in identification of industrial processes with time delay, a bias-eliminated iterative least-squares(ILS) identification method is proposed in this paper to estimate the output error model parameters and time delay simultaneously. An extended observation vector is constructed to establish an ILS identification algorithm. Moreover, a variable forgetting factor is introduced to enhance the convergence rate of parameter estimation. For consistent estimation, an instrumental variable method is given to deal with the colored noise. The convergence and upper bound error of parameter estimation are analyzed. Two illustrative examples are used to show the effectiveness and merits of the proposed method.
文摘Properties that are similar to the memory and learning functions in biological systems have been observed and reported in the experimental studies of memristors fabricated by different materials. These properties include the forgetting effect, the transition from short-term memory（STM） to long-term memory（LTM）, learning-experience behavior, etc. The mathematical model of this kind of memristor would be very important for its theoretical analysis and application design.In our analysis of the existing memristor model with these properties, we find that some behaviors of the model are inconsistent with the reported experimental observations. A phenomenological memristor model is proposed for this kind of memristor. The model design is based on the forgetting effect and STM-to-LTM transition since these behaviors are two typical properties of these memristors. Further analyses of this model show that this model can also be used directly or modified to describe other experimentally observed behaviors. Simulations show that the proposed model can give a better description of the reported memory and learning behaviors of this kind of memristor than the existing model.
