In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethac...In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.展开更多
Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios,which can effectively improve the recognition rate of objects.However,in the existing technical scenar...Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios,which can effectively improve the recognition rate of objects.However,in the existing technical scenarios,it is usually necessary to use complex optical devices such as filters or gratings to achieve wavelength extraction.These methods inevitably bring about the problems of complex structure and low integration.Therefore,it is necessary to realize the wavelength extraction function at the device level.Here,we realize the wavelength extraction function and wide-spectrum imaging function in the visible to infrared band based on a visible light absorber/floating gate storage layer/near-infrared(NIR)photogating layer configuration.Under infrared irradiation,the device exhibits negative photoresponse through the absorption of infrared light by the Ge substrate and the photogating effect,and realizes visible positive light response through the absorption of visible light by MoS2.Utilizing the memory function of the device,by cleverly changing the gate voltage pulse,the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states:visible light response only,response to both visible and infrared light,and infrared light response only.Active selective imaging of the word“XDU”was achieved at 532 and 1550 nm wavelength.By using the photoresponse data of the device,the passive imaging of the topography of Xi'an,Shaanxi Province was obtained,which effectively improves the recognition rate of mountains and rivers.The proposed reconfigurable visible–infrared wavelength-selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure.The single-chip-based spectral separation imaging solution lays a good foundation for the further development of visible–infrared vision applications.展开更多
Local phase transition in transition metal dichalcogenides (TMDCs) by lithiumintercalation enables the fabrication of high-quality contact interfaces in twodimensional(2D) electronic devices. However, controlling the ...Local phase transition in transition metal dichalcogenides (TMDCs) by lithiumintercalation enables the fabrication of high-quality contact interfaces in twodimensional(2D) electronic devices. However, controlling the intercalation oflithium is hitherto challenging in vertically stacked van der Waalsheterostructures (vdWHs) due to the random diffusion of lithium ions in thehetero-interface, which hinders their application for contact engineering of 2DvdWHs devices. Herein, a strategy to restrict the lithium intercalation pathwayin vdWHs is developed by using surface-permeation assisted intercalationwhile sealing all edges, based on which a high-performance edge-contact MoS_(2)vdWHs floating-gate transistor is demonstrated. Our method avoids intercalationfrom edges that are prone to be random but intentionally promotes lithiumintercalation from the top surface. The derived MoS_(2) floating-gatetransistor exhibits improved interface quality and significantly reduced subthresholdswing (SS) from >600 to 100 mV dec^(–1). In addition, ultrafast program/erase performance together with well-distinguished 32 memory statesare demonstrated, making it a promising candidate for low-power artificialsynapses. The study on controlling the lithium intercalation pathways in 2DvdWHs offers a viable route toward high-performance 2D electronics for memoryand neuromorphic computing purposes.展开更多
Synaptic devices that merge memory and processing functions into one unit have broad application potentials in neuromorphic computing, soft robots, and humanmachine interfaces. However, most previously reported synapt...Synaptic devices that merge memory and processing functions into one unit have broad application potentials in neuromorphic computing, soft robots, and humanmachine interfaces. However, most previously reported synaptic devices exhibit fixed performance once been fabricated,which limits their application in diverse scenarios. Here, we report floating-gate photosensitive synaptic transistors with charge-trapping perovskite quantum dots(PQDs) and atomic layer deposited(ALD) Al_(2)O_(3) tunneling layers, which exhibit typical synaptic behaviors including excitatory postsynaptic current(EPSC), pair-pulse facilitation and dynamic filtering characteristics under both electrical or optical signal stimulation. Further, the combination of the high-quality Al2O3 tuning layer and highly photosensitive PQDs charge-trapping layer provides the devices with extensively tunable synaptic performance under optical and electrical co-modulation. Applying light during electrical modulation can significantly improve both the synaptic weight changes and the nonlinearity of weight updates, while the memory effect under light modulation can be obviously adjusted by the gate voltage.The pattern learning and forgetting processes for "0" and "1"with different synaptic weights and memory times are further demonstrated in the device array. Overall, this work provides synaptic devices with tunable functions for building complex and robust artificial neural networks.展开更多
In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present...In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.展开更多
文摘In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.
基金National Natural Science Foundation of China,Grant/Award Numbers:62374129,62134005,62204188National Key Research and Development Program of China,Grant/Award Number:2023YFB2805000。
文摘Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios,which can effectively improve the recognition rate of objects.However,in the existing technical scenarios,it is usually necessary to use complex optical devices such as filters or gratings to achieve wavelength extraction.These methods inevitably bring about the problems of complex structure and low integration.Therefore,it is necessary to realize the wavelength extraction function at the device level.Here,we realize the wavelength extraction function and wide-spectrum imaging function in the visible to infrared band based on a visible light absorber/floating gate storage layer/near-infrared(NIR)photogating layer configuration.Under infrared irradiation,the device exhibits negative photoresponse through the absorption of infrared light by the Ge substrate and the photogating effect,and realizes visible positive light response through the absorption of visible light by MoS2.Utilizing the memory function of the device,by cleverly changing the gate voltage pulse,the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states:visible light response only,response to both visible and infrared light,and infrared light response only.Active selective imaging of the word“XDU”was achieved at 532 and 1550 nm wavelength.By using the photoresponse data of the device,the passive imaging of the topography of Xi'an,Shaanxi Province was obtained,which effectively improves the recognition rate of mountains and rivers.The proposed reconfigurable visible–infrared wavelength-selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure.The single-chip-based spectral separation imaging solution lays a good foundation for the further development of visible–infrared vision applications.
基金National Key Research and Development Program of China,Grant/Award Number:2023YFB4502200National Natural Science Foundation of China,Grant/Award Numbers:52372149,U21A2069+2 种基金Innovation Project of Optics Valley Laboratory,Grant/Award Number:OVL2023PY007Guangdong HUST Industrial Technology Research Institute,Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization,Grant/Award Number:2023B1212060012Interdiciplinary Research Program of HUST,Grant/Award Number:2024JCYJ008。
文摘Local phase transition in transition metal dichalcogenides (TMDCs) by lithiumintercalation enables the fabrication of high-quality contact interfaces in twodimensional(2D) electronic devices. However, controlling the intercalation oflithium is hitherto challenging in vertically stacked van der Waalsheterostructures (vdWHs) due to the random diffusion of lithium ions in thehetero-interface, which hinders their application for contact engineering of 2DvdWHs devices. Herein, a strategy to restrict the lithium intercalation pathwayin vdWHs is developed by using surface-permeation assisted intercalationwhile sealing all edges, based on which a high-performance edge-contact MoS_(2)vdWHs floating-gate transistor is demonstrated. Our method avoids intercalationfrom edges that are prone to be random but intentionally promotes lithiumintercalation from the top surface. The derived MoS_(2) floating-gatetransistor exhibits improved interface quality and significantly reduced subthresholdswing (SS) from >600 to 100 mV dec^(–1). In addition, ultrafast program/erase performance together with well-distinguished 32 memory statesare demonstrated, making it a promising candidate for low-power artificialsynapses. The study on controlling the lithium intercalation pathways in 2DvdWHs offers a viable route toward high-performance 2D electronics for memoryand neuromorphic computing purposes.
基金supported by the National Natural Science Foundation of China (61874029)。
文摘Synaptic devices that merge memory and processing functions into one unit have broad application potentials in neuromorphic computing, soft robots, and humanmachine interfaces. However, most previously reported synaptic devices exhibit fixed performance once been fabricated,which limits their application in diverse scenarios. Here, we report floating-gate photosensitive synaptic transistors with charge-trapping perovskite quantum dots(PQDs) and atomic layer deposited(ALD) Al_(2)O_(3) tunneling layers, which exhibit typical synaptic behaviors including excitatory postsynaptic current(EPSC), pair-pulse facilitation and dynamic filtering characteristics under both electrical or optical signal stimulation. Further, the combination of the high-quality Al2O3 tuning layer and highly photosensitive PQDs charge-trapping layer provides the devices with extensively tunable synaptic performance under optical and electrical co-modulation. Applying light during electrical modulation can significantly improve both the synaptic weight changes and the nonlinearity of weight updates, while the memory effect under light modulation can be obviously adjusted by the gate voltage.The pattern learning and forgetting processes for "0" and "1"with different synaptic weights and memory times are further demonstrated in the device array. Overall, this work provides synaptic devices with tunable functions for building complex and robust artificial neural networks.
文摘In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are given. The results are obtained through Monte-Carlo simulations.
