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The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET 被引量:1
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作者 王斌 张鹤鸣 +4 位作者 胡辉勇 张玉明 周春宇 王冠宇 李妤晨 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第2期539-544,共6页
The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor(pMOSFET) has been studied.By physically deriving the models of the flat... The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor(pMOSFET) has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET. 展开更多
关键词 strained-Si pMOSFET flatband voltage threshold voltage DOPING
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Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric 被引量:1
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作者 韩锴 王晓磊 +1 位作者 杨红 王文武 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第11期585-588,共4页
Gd-doped HfO2 has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor (MOS) devices due to a negative flatband voltage (Vfb) shift... Gd-doped HfO2 has drawn worldwide interest for its interesting features. It is considered to be a suitable material for N-type metal-oxide-semiconductor (MOS) devices due to a negative flatband voltage (Vfb) shift caused by the Gd doping. In this work, an anomalous positive shift was observed when Gd was doped into HfO2. The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors, such as Fermi level pinning (FLP), a dipole at the dielectric/SiO2 interface, fixed interracial charge, and bulk charge, on Vfb. It was found that the FLP and interfacial dipole could make Vfb negatively shifted, which is in agreement with the conventional dipole theory. The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfb shift. 展开更多
关键词 high-k dielectric HfGdOx interface dipole flatband voltage shift
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Robust moiré flatbands within a broad band-offset range 被引量:1
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作者 Peilong Hong Yi Liang +1 位作者 Zhigang Chen Guoquan Zhang 《Advanced Photonics Nexus》 2023年第6期7-13,共7页
Photonic analogs of the moirésuperlattices mediated by interlayer electromagnetic coupling are expected to give rise to rich phenomena,such as nontrivial flatband topology.Here,we propose and demonstrate a scheme... Photonic analogs of the moirésuperlattices mediated by interlayer electromagnetic coupling are expected to give rise to rich phenomena,such as nontrivial flatband topology.Here,we propose and demonstrate a scheme to tune the flatbands in a bilayer moirésuperlattice by employing a band offset.The band offset is changed by fixing the bands of one slab while shifting those of the other slab,which is accomplished by modifying the thickness of the latter slab.Our results show that the band-offset tuning not only makes some flatbands emerge and disappear but also leads to two sets of flatbands that are robustly formed even with the change of band offset over a broad range.These robust flatbands form either at the AA-stack site or at the AB-stack site,and as a result,a single-cell superlattice can support a pair of high-quality localized modes with tunable frequencies.Moreover,we develop a diagrammatic model to provide an intuitive insight into the formation of the robust flatbands.Our work demonstrates a simple yet efficient way to design and control complex moiréflatbands,providing new opportunities to utilize photonic moirésuperlattices for advanced light–matter interaction,including lasing and nonlinear harmonic generation. 展开更多
关键词 moirésuperlattice robust flatbands doubly resonant superlattice diagrammatic model
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Observation of doubly degenerate topological flatbands of edge states in strained graphene 被引量:1
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作者 Yongsheng Liang Jingyan Zhan +2 位作者 Shiqi Xia Daohong Song Zhigang Chen 《Advanced Photonics》 2025年第4期110-116,共7页
Flatbands are of significant interest due to their potential for strong energy confinement and their ability to facilitate strongly correlated physics such as unconventional superconductivity and fractional quantum Ha... Flatbands are of significant interest due to their potential for strong energy confinement and their ability to facilitate strongly correlated physics such as unconventional superconductivity and fractional quantum Hall states.When topology is incorporated into flatband systems,it further enhances flatband mode robustness against perturbations.We present the first realization of doubly degenerate topological flatbands of edge states in chiral-symmetric strained graphene.The flatband degeneracy stems from the merging of Dirac points,achieved by tuning the coupling ratios in a honeycomb lattice with newly discovered twig boundary conditions.The topology of these modes is characterized by the nontrivial winding number,which ensures their robustness against disorder.Experimentally,two types of topological edge states are observed in a strained photonic graphene lattice,consistent with numerical simulations.Moreover,the degeneracy of the topological flatbands doubles the density of states for zero-energy modes,facilitating the formation of compact edge states and providing greater control over edge states and light confinement.Our findings underscore the interplay among lattice geometry,symmetry,and topology in shaping doubly degenerate topological flatbands.This work opens new possibilities for advancements in correlated effects,nonlinear optical phenomena,and efficient energy transfer in materials science,photonic crystals,and quantum devices. 展开更多
关键词 topological flatband double degeneracy compact edge states photonic graphene
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Flatband high-Q metasurfaces inspired by coupled-resonator optical waveguides
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作者 Kaili Sun Yangjian Cai +1 位作者 Yuri Kivshar Zhanghua Han 《Advanced Photonics》 2025年第5期191-199,共9页
We discuss a new class of high-Q nonlocal metasurfaces composed of weakly coupled optical waveguides with a periodically broken translational symmetry.The physics of such metasurfaces can be understood with the concep... We discuss a new class of high-Q nonlocal metasurfaces composed of weakly coupled optical waveguides with a periodically broken translational symmetry.The physics of such metasurfaces can be understood with the concept of coupled-resonator optical waveguides(CROWs)developed earlier for in-plane propagation of light in arrays of optical microresonators and photonic crystal cavities,allowing us to realize photonic flatbands that exhibit uniform response to the resonant light across a wide range of incident angles.We suggest several realizations of this concept for anisotropic metasurfaces and demonstrate experimentally how such CROW-inspired metasurfaces can be employed to achieve unidirectional and bidirectional linear polarization flatbands,as well as chiral flatbands that are highly selective to the circular polarization of the incoming light. 展开更多
关键词 nonlocal metasurfaces coupled-resonator optical waveguides flatband CHIRALITY
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Quasi-flatband resonances and bound states in the continuum in coupled photonic topological defects for boosting light-matter interactions
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作者 Xinpeng Jiang Mingyu Luo +3 位作者 Zhaojian Zhang Jianwei You Zhihao Lan Junbo Yang 《Chinese Optics Letters》 2025年第10期213-220,共8页
In this Letter,we explore the interplay between topological defects and resonant phenomena in photonic crystal slabs,focusing on quasi-flatband resonances and bound states in the continuum(BICs).We identify anisotropi... In this Letter,we explore the interplay between topological defects and resonant phenomena in photonic crystal slabs,focusing on quasi-flatband resonances and bound states in the continuum(BICs).We identify anisotropic quasi-flatband resonances and isotropic quasi-flatband symmetry-protected BICs that exist in coupled topological defects characterized by nontrivial 2D Zak phases,originating from monopole,dipole,and quadrupole corner modes within second-order topological insulator systems.These topological defect modes,whose band structures are described using a tight-binding model,exhibit distinctive radiative behavior due to their symmetry and multipolar characteristics.Through far-field excitation analysis,we demonstrate the robustness and accessibility of these modes in terms of angular and spectral stability.Furthermore,we investigate potential applications of the quasi-flatband resonances in light-matter interactions,including optical forces,second-harmonic generation,and strong coupling,which exhibit robust performance under varying illumination angles.These findings offer new opportunities for precise control over light-matter interactions. 展开更多
关键词 topological photonics topological defect bound states in the continuum flatband light-matter interaction
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CCD电离辐射效应损伤机理分析 被引量:13
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作者 王祖军 唐本奇 +5 位作者 肖志刚 刘敏波 黄绍艳 张勇 陈伟 刘以农 《核电子学与探测技术》 CAS CSCD 北大核心 2009年第3期565-570,619,共7页
研究了CCD电离辐射引起总剂量效应和瞬态电离效应的损伤机理。分析了总剂量效应导致CCD平带电压和阈值电压漂移、表面暗电流密度增大以及饱和输出电压下降的规律和机理。研究了单粒子瞬态电离辐射导致CCD单粒子瞬态电荷产生的机理;研究... 研究了CCD电离辐射引起总剂量效应和瞬态电离效应的损伤机理。分析了总剂量效应导致CCD平带电压和阈值电压漂移、表面暗电流密度增大以及饱和输出电压下降的规律和机理。研究了单粒子瞬态电离辐射导致CCD单粒子瞬态电荷产生的机理;研究了瞬态脉冲电离辐射导致CCD信号电荷损失的机理。 展开更多
关键词 CCD电离辐射 平带电压 表面暗电流 饱和输出电压 单粒子瞬态电荷
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电容测量研究铬表面氧化膜的半导体性能 被引量:14
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作者 孔德生 李亮 《物理化学学报》 SCIE CAS CSCD 北大核心 2004年第6期631-636,共6页
利用电容测量技术,基于Mott-Sckottky分析,研究了在0.5 mol·L-1H2SO4溶液中铬表面氧化膜的半导体性质,以及膜形成条件的影响.结果表明,铬在钝化电位区内所形成的表面氧化膜具有p-型半导体特性,膜的厚度约(1.2±0.3)nm.膜的阻... 利用电容测量技术,基于Mott-Sckottky分析,研究了在0.5 mol·L-1H2SO4溶液中铬表面氧化膜的半导体性质,以及膜形成条件的影响.结果表明,铬在钝化电位区内所形成的表面氧化膜具有p-型半导体特性,膜的厚度约(1.2±0.3)nm.膜的阻抗响应表现出低频弥散行为,可以用介电弛豫普适定律来描述.膜的掺杂浓度NA随成膜电位及极化时间的延长而增大,溶液pH值则通过改变膜的表面电荷而影响膜的平带电位EFB。 展开更多
关键词 钝化膜 电容测量 受主浓度 平带电位
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高性能Bi^(3+)掺杂改性PbO_2电极的制备及表征(英文) 被引量:5
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作者 杨卫华 杨武涛 林小燕 《物理化学学报》 SCIE CAS CSCD 北大核心 2012年第4期831-836,共6页
采用电沉积法制备了金属Bi3+改性PbO2(Bi-PbO2)电极,并通过扫描电镜(SEM)、X射线能谱(EDS)、X射线光电子能谱(XPS)、X射线衍射(XRD)、紫外-可见漫反射(UV-VisDRS)、荧光光谱(FP)、莫特-肖特基(Mott-Schottky)曲线、电化学阻抗谱(EIS)和... 采用电沉积法制备了金属Bi3+改性PbO2(Bi-PbO2)电极,并通过扫描电镜(SEM)、X射线能谱(EDS)、X射线光电子能谱(XPS)、X射线衍射(XRD)、紫外-可见漫反射(UV-VisDRS)、荧光光谱(FP)、莫特-肖特基(Mott-Schottky)曲线、电化学阻抗谱(EIS)和线性极化扫描(LSV)等方法表征了其微结构和电化学性能.SEM、EDS和XPS结果表明,Bi3+以Bi2O3的形式掺杂进入PbO2镀层,同时其掺杂改性可明显改善PbO2镀层的微结构,使电极表面颗粒细化;XRD和UV-VisDRS分析结果显示Bi3+掺杂改性后,PbO2晶体的晶胞参数发生变化,同时禁带宽度(Eg)变小;荧光光谱分析表明Bi-PbO2电极可促进羟基自由基的产生,增强电极降解有机物的催化活性;电化学性能测试显示,Bi3+改性PbO2电极电催化活性的提升与电极的平带电势(Efb)负移、活性表面积增大、电化学反应电阻减小和析氧电位提高有关. 展开更多
关键词 二氧化铅 禁带宽度 平带电势 电催化活性
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TiO_2光电催化制氢基本原理及其影响因素 被引量:2
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作者 张博 张文魁 +1 位作者 王改田 涂江平 《钛工业进展》 CAS 2004年第6期5-9,共5页
概述TiO2半导体光电催化分解水制氢基本原理,着重介绍平带电位的影响和TiO2薄膜的性能,并概括了施加外加偏置电压的方法;概述了常见的半导体修饰方法的基本原理。最后指出光电催化制氢尚待解决的一些基本问题并展望了光电催化制氢的应... 概述TiO2半导体光电催化分解水制氢基本原理,着重介绍平带电位的影响和TiO2薄膜的性能,并概括了施加外加偏置电压的方法;概述了常见的半导体修饰方法的基本原理。最后指出光电催化制氢尚待解决的一些基本问题并展望了光电催化制氢的应用前景。 展开更多
关键词 制氢 TIO2薄膜 修饰方法 应用前景 分解 性能 光电催化 平带电位 半导体 基本问题
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Insight into the influence of high temperature annealing on the onset potential of Ti-doped hematite photoanodes for solar water splitting 被引量:1
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作者 Yaodong Zhu Qinfeng Qian +4 位作者 Guozheng Fan Zhili Zhu Xin Wang Zhaosheng Li Zhigang Zou 《Chinese Chemical Letters》 SCIE CAS CSCD 2018年第6期791-794,共4页
For Ti-doped hematite photoanodes, high temperature annealing drastically increases the water oxidation plateau photocurrent, but also induces an anodic shift of onset potential by about 100 m V, thus hindering the pe... For Ti-doped hematite photoanodes, high temperature annealing drastically increases the water oxidation plateau photocurrent, but also induces an anodic shift of onset potential by about 100 m V, thus hindering the performance under low applied bias. To the best of our knowledge, the effects of high temperature annealing on the onset potential have been rarely studied. Herein, both X-ray photoelectron spectroscopy(XPS) measurements and theoretical calculations indicated that the increase of surface Ti/Fe atomic ratio after high temperature annealing decreased the adsorption capacity of hydroxide ions on the hematite surface. Subsequently, the flatband potential(i.e., the theoretical onset potential) of Ti doped hematite photoanodes positively shifted, which was supported by the Mott-Schottky measurements. 展开更多
关键词 Onset potential HEMATITE Ti doping High temperature annealing flatband potential DFT calculation
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铁钝化膜半导体特性的光电化学研究 被引量:1
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作者 张国栋 《物理化学学报》 SCIE CAS CSCD 北大核心 1991年第3期366-370,共5页
近年来,光电化学作为金属钝化膜的“现场”(insltu)研究方法越来越受到重视。本文研究了铁钝化膜在硼酸/硼酸钠溶液中的光电化学行为,通过钝化膜的光电流响应与入射光强、波长及电极电位关系研究,说明铁钝化膜的非晶态n型半导体特性。... 近年来,光电化学作为金属钝化膜的“现场”(insltu)研究方法越来越受到重视。本文研究了铁钝化膜在硼酸/硼酸钠溶液中的光电化学行为,通过钝化膜的光电流响应与入射光强、波长及电极电位关系研究,说明铁钝化膜的非晶态n型半导体特性。实验部分研究电极由99.99%的纯铁制成(购自上海冶金所),受光面积为0.5cm^2,对电极为1cm^2的铂片,饱和甘汞电极作参比电极。溶液的组成为Na_2B_4O_7(0.075mol·L^(-1))+H_3BO_3(0.3mol·L(-1)),试剂均为分折纯,用二次蒸馏水配制。灯源为400W溴钨灯,光强用JG-Ⅰ型绝对功率计(长春真空器件厂)测量,电极电位用DH-Ⅱ型双恒电位仪(延边电化学仪器厂)控制,测量光电流-电位及光电流-光强关系时,用脉冲白光作光源,脉冲光的频率用斩光器调节。测量光电流-波长关系时,用WDG-Ⅰ型强光单色仪(四平光学仪器厂)产生单色光,并用PAR-5202型锁相放大器测量光电流, 展开更多
关键词 铁印化膜 半导体 光电化学 光电流
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The Photonic Band Gaps in the Two-Dimensional Plasma Photonic Crystals with Rhombus Lattice
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作者 张开明 孙东升 《Plasma Science and Technology》 SCIE EI CAS CSCD 2016年第6期583-589,共7页
In this paper,under two different electromagnetic modes,the photonic band gaps(PBGs) in the two-dimensional plasma photonic crystals(PPCs) are theoretically investigated based on the plane wave expansion method.Th... In this paper,under two different electromagnetic modes,the photonic band gaps(PBGs) in the two-dimensional plasma photonic crystals(PPCs) are theoretically investigated based on the plane wave expansion method.The proposed PPCs are arranged in rhombus lattices,in which the homogeneous unmagnetized plasma rods are immersed in the isotropic dielectric background.The computed results showed that PBGs can be easily tuned by the angle of rhombus lattices,and a cutoff frequency and a flatbands region can be observed under the TM and TE polarized waves,respectively.The relationships between the relative bandwidths of first PBGs and the parameters of PPCs in two such cases also are discussed.The numerical simulations showed that the PBGs can be manipulated obviously by the parameters as mentioned above.The proposed results can be used to design the waveguide and filter based on the PPCs. 展开更多
关键词 PLASMA photonic crystals plane wave expansion method cutoff frequency flatbands region
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级联IIR和FIR滤波器的微波光子滤波器的特性分析
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作者 聂奎营 胡总华 《光电子》 2019年第1期48-55,共8页
在深入研究微波滤波技术的基础上,理论分析了一种级联IIR和FIR滤波器的微波光子滤波器(MPF)。讨论了IIR滤波器的耦合系数、掺饵光纤环的增益和光纤布拉格光栅(FBGs)的反射率以及FIR滤波器的耦合系数对微波光子滤波器滤波性能的影响。结... 在深入研究微波滤波技术的基础上,理论分析了一种级联IIR和FIR滤波器的微波光子滤波器(MPF)。讨论了IIR滤波器的耦合系数、掺饵光纤环的增益和光纤布拉格光栅(FBGs)的反射率以及FIR滤波器的耦合系数对微波光子滤波器滤波性能的影响。结果表明通过优化FIR滤波器的耦合系数,IIR滤波器的耦合系数、掺饵光纤环增益和FBGs的反射率,可以实现平坦带通和平坦带阻滤波性能的互调。 展开更多
关键词 微波光子滤波器 平坦带通滤波 无限脉冲响应滤波器 有限脉冲响应滤波器
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Physicochemical Characterization of Photoelectrodes of Ti/TiO<sub>2</sub>Prepared by Thermal Oxidation of Titanium
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作者 Marcos M. Pedemonte Alberto L. Capparelli 《Energy and Power Engineering》 2015年第9期403-411,共9页
The preparation and study of supported TiO2 for photocatalytic application in solar cell devices is a relevant research field. Thin films of TiO2 prepared on Ti by thermal oxidation in a wide range of temperatures (45... The preparation and study of supported TiO2 for photocatalytic application in solar cell devices is a relevant research field. Thin films of TiO2 prepared on Ti by thermal oxidation in a wide range of temperatures (450&deg;C - 900&deg;C) were characterized by electrochemical impedance spectroscopy, potentiometry and amperometry. This material presents photoelectrochemical activity, which depends dramatically of the oxidation temperature and the exposition time at the studied temperatures. The flatband potential as well as the donor density and the resistance to the charge transfer were measured. All these parameters are temperature dependent, and the optimal values are observed on the photoelectrodes prepared at 750&deg;C. This result is consistent with the photochemical response reported in the literature for thin films of Ti/TiO2 prepared under similar conditions. 展开更多
关键词 Ti/TiO2 PHOTOELECTRODES flatband Potential Mott-Schottky and NYQUIST DIAGRAMS
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CCD电离辐射加固工艺研究 被引量:1
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作者 李杰 王缙 +5 位作者 董亮初 严荣良 余学锋 张玲珊 陆妩 米拉提汗 《核电子学与探测技术》 CAS CSCD 北大核心 1990年第4期193-199,共7页
本文以简单的MOS电容为手段,研究CCD工艺,以提高器件的抗电离辐射能力。研究发现,栅氧化温度、SiO_2栅介质厚度和CCD工艺中栅氧化以后的高温过程对辐照性能的影响最大;并提出减薄SiO_2栅介质厚度、在1000℃干氧栅氧化、表面栅和埋栅下Si... 本文以简单的MOS电容为手段,研究CCD工艺,以提高器件的抗电离辐射能力。研究发现,栅氧化温度、SiO_2栅介质厚度和CCD工艺中栅氧化以后的高温过程对辐照性能的影响最大;并提出减薄SiO_2栅介质厚度、在1000℃干氧栅氧化、表面栅和埋栅下SiO_2介质在相同条件下生长以及栅氧化后工艺流程中的高温步骤的温度不能超过栅氧化温度和尽量减少栅氧化后的高温步骤等改进的工艺措施。 展开更多
关键词 电荷 耦合器 电离 辐射 NOS电容
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SiO2/4H-SiC界面氮化退火 被引量:1
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作者 赵艳黎 李诚瞻 +2 位作者 陈喜明 王弋宇 申华军 《半导体技术》 CAS CSCD 北大核心 2017年第3期215-218,共4页
通过1 300℃高温干氧热氧化法在n型4H-SiC外延片上生长了厚度为60 nm的SiO2栅氧化层。为了开发适合于生长低界面态密度和高沟道载流子迁移率的SiC MOSFET器件产品的栅极氧化层退火条件,研究了不同退火条件下的SiO2/SiC界面电学特性参数... 通过1 300℃高温干氧热氧化法在n型4H-SiC外延片上生长了厚度为60 nm的SiO2栅氧化层。为了开发适合于生长低界面态密度和高沟道载流子迁移率的SiC MOSFET器件产品的栅极氧化层退火条件,研究了不同退火条件下的SiO2/SiC界面电学特性参数。制作了MOS电容和横向MOSFET器件,通过表征SiO2栅氧化层C-V特性和MOSFET器件I-V特性,提取平带电压、C-V磁滞电压、SiO2/SiC界面态密度和载流子沟道迁移率等电学参数。实验结果表明,干氧氧化形成SiO2栅氧化层后,在1 300℃通入N2退火30 min,随后在相同温度下进行NO退火120 min,为最佳栅极氧化层退火条件,此时,SiO2/SiC界面态密度能够降低至2.07×1012cm-2·e V^(-1)@0.2 e V,SiC MOSFET沟道载流子迁移率达到17 cm2·V^(-1)·s^(-1)。 展开更多
关键词 SiO2/4H-SiC 氮化退火 界面态密度 平带电压 C-V磁滞电压 迁移率
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平带光子微结构中的新颖现象:从模式局域到实空间拓扑 被引量:1
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作者 夏世强 唐莉勤 +6 位作者 夏士齐 马继娜 燕文超 宋道红 胡毅 许京军 陈志刚 《物理学报》 SCIE EI CAS CSCD 北大核心 2020年第15期154-168,共15页
近年来,凝聚态物理中平带局域与拓扑等概念与光学体系的有机结合,使得平带光子学系统的研究迎来了极为快速的发展,催生了一系列新颖的光物理现象与潜在的应用前景.目前,平带结构在光子晶体、光学超构材料以及光子晶格(倏逝波耦合的光学... 近年来,凝聚态物理中平带局域与拓扑等概念与光学体系的有机结合,使得平带光子学系统的研究迎来了极为快速的发展,催生了一系列新颖的光物理现象与潜在的应用前景.目前,平带结构在光子晶体、光学超构材料以及光子晶格(倏逝波耦合的光学波导阵列)等多种人工光子微结构中得到了实现,并在其中观察到了很多凝聚态系统中难以直接实现的物理现象.本文简要综述光子微结构中关于平带物理的最新研究进展.以光诱导和激光直写光子晶格系统为例,包括Lieb,Kagome和超级蜂窝晶格等,特别介绍平带模式局域与实空间拓扑效应等新颖物理现象.光子微结构为研究平带物理和拓扑效应提供了一个可调控的平台,同时其研究结果也对探究电子、声子、等离激元、腔极化子与超冷原子等系统中相关的基本物理问题和应用具有借鉴作用. 展开更多
关键词 光子微结构 平带 局域模 实空间拓扑 不可压缩环形态
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NiNb_2O_6光电极的表面处理和平带电势的研究
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作者 李果华 陈恩华 李国昌 《石家庄铁道学院学报》 1997年第3期6-9,共4页
对电极进行机械抛光加化学抛光加光抛光处理后,测得了NiNb2O6半导体光电极空间电荷层的微分电容的稳定值,得到了平带电势Vfb与电解液pH值间的关系,并与Vfb的理论计算值进行了比较。根据Mott-Schottky方程可以估计电极中的施主浓度... 对电极进行机械抛光加化学抛光加光抛光处理后,测得了NiNb2O6半导体光电极空间电荷层的微分电容的稳定值,得到了平带电势Vfb与电解液pH值间的关系,并与Vfb的理论计算值进行了比较。根据Mott-Schottky方程可以估计电极中的施主浓度。平带电势还与电解液的组分有关。 展开更多
关键词 光电极 平带电势 半导体光电化学 NiNb2O6光电极
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非水溶剂中纳米结构SrTiO_(3)薄膜电极平带电位研究
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作者 张惠惠 寇慧芝 汪海波 《人工晶体学报》 CAS 北大核心 2021年第6期1070-1075,共6页
本文制备了纳米结构SrTiO_(3)薄膜电极,并通过XRD、TEM和SEM对电极的结构和表面形貌进行表征。利用光谱电化学法,测定了纳米结构SrTiO_(3)电极在非水溶剂中的平带电位。研究发现:SrTiO_(3)电极在水中及非水质子溶剂(甲醇、乙醇)中的平... 本文制备了纳米结构SrTiO_(3)薄膜电极,并通过XRD、TEM和SEM对电极的结构和表面形貌进行表征。利用光谱电化学法,测定了纳米结构SrTiO_(3)电极在非水溶剂中的平带电位。研究发现:SrTiO_(3)电极在水中及非水质子溶剂(甲醇、乙醇)中的平带电位比在非水非质子溶剂(乙腈、四氢呋喃)中更正。在水及非水质子溶剂中,Li^(+)的添加对SrTiO_(3)电极的平带电位影响较小,而在非水非质子溶剂中,Li^(+)的加入对SrTiO_(3)电极的平带电位有较大影响,随着Li^(+)浓度的增加,SrTiO_(3)电极的平带电位向电位更正的方向移动。 展开更多
关键词 SrTiO_(3)电极 光谱电化学 非水质子溶剂 非水非质子溶剂 平带电位
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