With the continuous scaling of ferroelectric memories to below 5 nm,material and integration challenges that were previously manageable are now becoming increasingly prominent[1].At atomic thicknesses,conventional fer...With the continuous scaling of ferroelectric memories to below 5 nm,material and integration challenges that were previously manageable are now becoming increasingly prominent[1].At atomic thicknesses,conventional ferroelectric oxides suffer from depolarization fields,interfacial charge trapping and structural non-uniformity,leading to rapid performance degradation and poor device-to-device consistency[2].These issues have become a critical bottleneck for ferroelectric field-effect transistors(FeFETs),which are widely regarded as promising building blocks for low-power embedded non-volatile memory and computing-in-memory architectures[3-5].展开更多
基金financial support from the Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)。
文摘With the continuous scaling of ferroelectric memories to below 5 nm,material and integration challenges that were previously manageable are now becoming increasingly prominent[1].At atomic thicknesses,conventional ferroelectric oxides suffer from depolarization fields,interfacial charge trapping and structural non-uniformity,leading to rapid performance degradation and poor device-to-device consistency[2].These issues have become a critical bottleneck for ferroelectric field-effect transistors(FeFETs),which are widely regarded as promising building blocks for low-power embedded non-volatile memory and computing-in-memory architectures[3-5].
