The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor （DG ASiNR FET） are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium G...The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor （DG ASiNR FET） are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green＇s function （NEGF） approach self-consistently coupled with a three-dimensional （3D） Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain mag- nitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power （GMP） is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.展开更多
针对GFET器件中杂质和缺陷引起的本征通道不均匀而导致传统噪声模型拟合度较差的问题,提出了一种基于电荷的石墨烯场效应晶体管(Graphene Field Effect Transistors,GFET)等效噪声电路模型。首先考虑了GFET器件非互易性的影响,通过在小...针对GFET器件中杂质和缺陷引起的本征通道不均匀而导致传统噪声模型拟合度较差的问题,提出了一种基于电荷的石墨烯场效应晶体管(Graphene Field Effect Transistors,GFET)等效噪声电路模型。首先考虑了GFET器件非互易性的影响,通过在小信号等效电路中引入电荷受控源来模拟器件在相关偏置条件下本征通道电荷传输特性,并从S参数中提取小信号模型参数,建立基于电荷的小信号等效电路模型。然后对GFET的高频噪声特性分析,采用PRC模型方法进行表征,噪声去嵌技术获取噪声模型参数,进一步建立基于电荷的GFET等效噪声电路模型。最后,在1~50GHz的频率范围内评估其射频性能,得到S参数最大误差仅为2.2%,最小噪声系数平均误差为1.2%,并将截止频率、噪声参数等射频指标与实验数据比较,验证了所提出模型的有效性和实用性。展开更多
文摘The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor （DG ASiNR FET） are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green＇s function （NEGF） approach self-consistently coupled with a three-dimensional （3D） Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain mag- nitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power （GMP） is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.
文摘针对GFET器件中杂质和缺陷引起的本征通道不均匀而导致传统噪声模型拟合度较差的问题,提出了一种基于电荷的石墨烯场效应晶体管(Graphene Field Effect Transistors,GFET)等效噪声电路模型。首先考虑了GFET器件非互易性的影响,通过在小信号等效电路中引入电荷受控源来模拟器件在相关偏置条件下本征通道电荷传输特性,并从S参数中提取小信号模型参数,建立基于电荷的小信号等效电路模型。然后对GFET的高频噪声特性分析,采用PRC模型方法进行表征,噪声去嵌技术获取噪声模型参数,进一步建立基于电荷的GFET等效噪声电路模型。最后,在1~50GHz的频率范围内评估其射频性能,得到S参数最大误差仅为2.2%,最小噪声系数平均误差为1.2%,并将截止频率、噪声参数等射频指标与实验数据比较,验证了所提出模型的有效性和实用性。
