Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial ...Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.展开更多
Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area...Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area was modulated by the optical field.Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer.The device was used as a photodetector in the OFF state but not in the ON state.The higher tunnelling electroresistance(~1.4×10^(4))in a lateral structured ferroelectric tunnelling junction was crucial,and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS_(2) Schottky junction.The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties.The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.展开更多
In the quest for effective solutions to address Environ.Pollut.and meet the escalating energy demands,heterojunction photocatalysts have emerged as a captivating and versatile technology.These photocatalysts have garn...In the quest for effective solutions to address Environ.Pollut.and meet the escalating energy demands,heterojunction photocatalysts have emerged as a captivating and versatile technology.These photocatalysts have garnered significant interest due to their wideranging applications,including wastewater treatment,air purification,CO_(2) capture,and hydrogen generation via water splitting.This technique harnesses the power of semiconductors,which are activated under light illumination,providing the necessary energy for catalytic reactions.With visible light constituting a substantial portion(46%)of the solar spectrum,the development of visible-light-driven semiconductors has become imperative.Heterojunction photocatalysts offer a promising strategy to overcome the limitations associated with activating semiconductors under visible light.In this comprehensive review,we present the recent advancements in the field of photocatalytic degradation of contaminants across diverse media,as well as the remarkable progress made in renewable energy production.Moreover,we delve into the crucial role played by various operating parameters in influencing the photocatalytic performance of heterojunction systems.Finally,we address emerging challenges and propose novel perspectives to provide valuable insights for future advancements in this dynamic research domain.By unraveling the potential of heterojunction photocatalysts,this reviewcontributes to the broader understanding of their applications and paves the way for exciting avenues of exploration and innovation.展开更多
In this paper, CuO/TiO_(2) p-n heterojunction was developed as a new surface enhanced Raman scattering(SERS) substrate to magnify Raman signal of 4-mercaptobenzoic acid(4-MBA) molecule. In the heterojunction-molecule ...In this paper, CuO/TiO_(2) p-n heterojunction was developed as a new surface enhanced Raman scattering(SERS) substrate to magnify Raman signal of 4-mercaptobenzoic acid(4-MBA) molecule. In the heterojunction-molecule system, CuO as an “electron capsule” can not only offer more electrons to inject into the surface state energy level of TiO_(2) and consequently bring additional charge transfer, but also improve photogenerated carrier separation efficiency itself due to strong interfacial coupling in the interface of heterojunction, which together boost SERS performance of the heterojunction substrate. As expected,owing to the enhanced charge collection capacity and the improvement of photogenerated carrier separation efficiency derived from internal electric field and strong interface coupling provided in the interface of heterojunction, this substrate exhibits excellent SERS detection sensitivity towards 4-MBA, with a detection limit as low as 1 × 10^(-10)mol/L and an enhancement factor of 8.87 × 10~6.展开更多
Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor sol...Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.展开更多
Solar-driven photocatalytic hydrogen production via water splitting is considered as one of the most promising green and sustainable strategies,with the potential to replace traditional fossil fuels[1,2].Generally,thi...Solar-driven photocatalytic hydrogen production via water splitting is considered as one of the most promising green and sustainable strategies,with the potential to replace traditional fossil fuels[1,2].Generally,this photocatalytic reaction process includes the following steps:First,the semiconductor photocatalyst is photoexcited to generate photoinduced excitons on a femtosecond timescale.Next,the photoinduced excitons are separated into photogenerated electrons and holes,occurring within a femtosecond to picosecond timescale.Subsequently,only a small fraction of the photogenerated electrons and holes can overcome kinetic barriers,such as phonon scattering and bulk defects,to migrate to the surface。展开更多
In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and S...In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.展开更多
In this work,we developed a novel photoelectrochemical(PEC)sensor based on n-p organic semiconductor heterojunction for sensitive detecting MCF-7 cancer cells.BTA-C4 Ph and PM6 were designed as photoactive materials t...In this work,we developed a novel photoelectrochemical(PEC)sensor based on n-p organic semiconductor heterojunction for sensitive detecting MCF-7 cancer cells.BTA-C4 Ph and PM6 were designed as photoactive materials to form n-p heterojunction,which greatly enhanced the photoelectric conversion efficiency.Antibody-modified magnetic nanoparticles were utilized to capture and separate MCF-7 cells from samples.Detection of MCF-7 is ascribed to the loading of MCF-7 onto BTA-C4 Ph-PM6 modified electrode that resulted in the decrease of photocurrent intensity.The PEC immunosensor displayed a linear concentration ranging from 50 cell/m L to 1×10^(4) cell/m L with a limit of detection(LOD)of 41 cell/m L(S/N=3)for MCF-7.Additionally,the senor also exhibited good stability,excellent selectivity and prominent reproducibility.Furthermore,the sensor was successfully applied to detect MCF-7 in whole blood.This work illustrates that n-p heterojunction of organic semiconductor may find wide applications for the preparation of different photoelectrochemical sensors.展开更多
Recently,a new opinion was put forward on general design standards for S-scheme heterojunction photocatalyst.Four types of S-scheme heterojunctions were analyzed.Specifically,the critical understanding on the curved F...Recently,a new opinion was put forward on general design standards for S-scheme heterojunction photocatalyst.Four types of S-scheme heterojunctions were analyzed.Specifically,the critical understanding on the curved Fermi level at the interface of S-scheme heterojunction is helpful to strengthen and promote the basic theory of photocatalysis.展开更多
With the rapid development of economy and modern industry,serious environmental pollution and energy shortage have become major urgent challenges to the human society.Photocatalysis is a promising technology to provid...With the rapid development of economy and modern industry,serious environmental pollution and energy shortage have become major urgent challenges to the human society.Photocatalysis is a promising technology to provide green energy.As a typical metal-free polymer photocatalyst,g-C_(3)N_(4) has attracted more and more attention due to its excellent performance.Unfortunately,the fast recombination of photo-induced charges,limited light response range as well as weak oxidation ability are still the key drawback that restrict the photocatalytic performance of g-C_(3)N_(4).These problems can be effectively addressed by constructing g-C_(3)N_(4)-based heterojunctions with two or more semiconductor materials,during which the respective advantages can be integrated.Up to now,the various oxidation semiconductor photocatalysts have been tried to construct the novel S-scheme heterojunction photocatalysts with g-C_(3)N_(4).Thus,this review provides a comprehensive introduction of g-C_(3)N_(4)-based S-scheme heterojunctions,including the main characteristics of the S-scheme heterojunction,photocatalytic mechanisms,design rules and preparation methods of g-C_(3)N_(4)-based S-scheme heterojunction photocatalysts.Moreover,this review summarizes recently reported works on the potential applications of g-C_(3)N_(4)-based S-scheme photocatalysts in various important photocatalytic reactions,including photocatalytic hydrogen production,photocatalytic degradation of contaminants,photo-reduction of CO_(2) into fuels,and photocatalytic sterilization.Finally,based on the current research progress,we propose some shortages in the preparation methods and applications of g-C_(3)N_(4)-based S-scheme heterojunctions,which are to be further investigated and resolved in this promising and creative research field.展开更多
A novel ZnCo_2O_4/Bi_2O_3 heterojunction photocatalyst was prepared, and the formation of the heterojunction was confirmed via HRTEM. Photocatalytic activity of as-prepared samples was evaluated through photodegradati...A novel ZnCo_2O_4/Bi_2O_3 heterojunction photocatalyst was prepared, and the formation of the heterojunction was confirmed via HRTEM. Photocatalytic activity of as-prepared samples was evaluated through photodegradation of malachite green(MG). The degradation results show that the as-prepared13% ZnCo_2O_4/Bi_2O_3 heterojunction photocatalyst exhibits higher activity than pure Bi_2O_3. The MG degradation rate for the as-prepared catalyst is as high as 94%. The enhanced photocatalytic activity is mainly attributed to the broad photoabsorption and low recombination rate of photogenerated electronhole pairs, which is driven by the photogene rated potential difference formed at the ZnCo_2O_4/Bi_2O_3 heterojunction interface.展开更多
TiO2 nanoparticles were prepared using the hydrothermal method and modified with CgN to syn-thesize a Type-Ⅱheterojunction semiconductor photocatalyst,TiO2-C;Na.In addition,a carbon layerwas coated onto the TiO2 nano...TiO2 nanoparticles were prepared using the hydrothermal method and modified with CgN to syn-thesize a Type-Ⅱheterojunction semiconductor photocatalyst,TiO2-C;Na.In addition,a carbon layerwas coated onto the TiO2 nanoparticles and the obtained material was uniformly covered on thesurface of CaNa to form an all-solid-state Z-scheme semiconductor photocatalyst,TiO2-C-C3N4,Through characterization by XRD,XPS,SEM,TEM,BET,photoelectrochemical experiments,UV-visible diffuse reflection,and PL spectroscopy,the charge transfer mechanism and band gappositions for the composite photocatalysts were analyzed.The Type-Ⅱand all-solid-state Z-schemeheterojunction structures were compared.By combining microscopic internal mechanisms withmacroscopic experimental phenomena,the relationship between performance and structure wasverified.Experimental methods were used to explore the adaptation degree of different photocata-lytic mechanisms using the same degradation system.This study highlights effective photocatalystdesign to meet the requirements for specific degradation conditions.展开更多
The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits s...The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current(SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarizationmodulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state(RS), which is formed by the double ferroelectric layer Ba TiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory(RRAM) devices based on ferroelectric materials.展开更多
In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitution...In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitutional accepter and donor concentration up to NA=5.0×10^17 cm^-3 and ND=9.0×10^16 cm^-3 for deep ultraviolet lasing was achieved.The structure was assumed to be grown over bulk AIN substrate and operate under a continuous wave at room temperature.Although there is an emphasizing of the suitability for using boron nitride wide band gap in the deep ultraviolet region,there is still a shortage of investigation about the ternary BGaN in aluminum-rich AIGaN alloys.Based on the simulation,an average local gain in quantum wells of 1946 cm^-1,the maximum emitted power of 2.4 W,the threshold current of 500 mA,a slope efficiency of 1.91 W/A as well as an average DC resistance for the V-I curve of(0.336Ω)had been observed.Along with an investigation regarding different EBL,designs were included with tapered and inverse tapered structure.Therefore,it had been found a good agreement with the published results for tapered EBL design,with an overweighting for a proposed inverse tapered EBL design.展开更多
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun...This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.展开更多
Porous graphite-phase polymeric carbon nitride（GPPCN）/TiO2 donor-acceptor heterojunction was facilely fabricated through the combination of a template technique with a co-calcination process,which exhibited much hig...Porous graphite-phase polymeric carbon nitride（GPPCN）/TiO2 donor-acceptor heterojunction was facilely fabricated through the combination of a template technique with a co-calcination process,which exhibited much higher photoelectric activity compared to pristine carbon nitride and TiO2.The precursor of porous GPPCN（pGPPCN）,porous melem,was prepared by using a green template,calcium carbonate,which could be easily removed by diluted hydrochloride.The pGPPCN/TiO2 heterojunction was then obtained by the assembly and subsequent co-calcination of TiO2 nanoparticles with porous melem.The formation of pGPPCN/TiO2 donor-acceptor heterojunction prepared by this method showed improved surface area and light absorption.Moreover,the composite presented much higher photo-energy conversion activity than those of GPPCN,pGPPCN and TiO2,which could be mainly ascribed to the high charge carrier separation efficiency.This study provides a new approach for the design and development of various photocatalysts with high efficiency for applications in energy fields.展开更多
Extending the ionic conductivity is the pre-requisite of electrolytes in fuel cell technology for high-electrochemical performance.In this regard,the introduction of semiconductor-oxide materials and the approach of h...Extending the ionic conductivity is the pre-requisite of electrolytes in fuel cell technology for high-electrochemical performance.In this regard,the introduction of semiconductor-oxide materials and the approach of heterostructure formation by modulating energy bands to enhance ionic conduction acting as an electrolyte in fuel cell-device.Semiconductor(n-type;SnO_(2))plays a key role by introducing into p-type SrFe_(0.2)Ti_(0.8)O_(3-δ)(SFT)semiconductor perovskite materials to construct p-n heterojunction for high ionic conductivity.Therefore,two different composites of SFT and SnO_(2)are constructed by gluing p-and n-type SFT-SnO_(2),where the optimal composition of SFT-SnO_(2)(6∶4)heterostructure electrolyte-based fuel cell achieved excellent ionic conductivity 0.24 S cm^(-1)with power-output of 1004 mW cm^(-2)and high OCV 1.12 V at a low operational temperature of 500℃.The high power-output and significant ionic conductivity with durable operation of 54 h are accredited to SFT-SnO_(2)heterojunction formation including interfacial conduction assisted by a built-in electric field in fuel cell device.Moreover,the fuel conversion efficiency and considerable Faradaic efficiency reveal the compatibility of SFT-SnO_(2)heterostructure electrolyte and ruled-out short-circuiting issue.Further,the first principle calculation provides sufficient information on structure optimization and energy-band structure modulation of SFT-SnO_(2).This strategy will provide new insight into semiconductor-based fuel cell technology to design novel electrolytes.展开更多
Background:Organic semiconductors have attracted much attention due to their excellent biocompatibility,tunable electronic structure,low cost,and antimicrobial phototherapy.However,owing to the high exciton binding en...Background:Organic semiconductors have attracted much attention due to their excellent biocompatibility,tunable electronic structure,low cost,and antimicrobial phototherapy.However,owing to the high exciton binding energies,organic semiconductor is constrained by their short exciton diffusion length,leading to inefficient transportation of photogenerated carriers and deficient antibacterial capability.Methods:To address this issue,a quad-channel synergistic antibacterial nano-platform of copper sulfide/organic semiconductor(CuS/IEICO-4F)heterojunctions with enhanced photocatalytic performance is designed and manufactured,which can produce localized heat and raise the levels of extracellular reactive oxygen species under near-infrared laser irradiation.Simultaneously,the released Cu2+can consume intrabacterial glutathione,destroying the defense system and ultimately leading to bacterial inactivation.Results:In vitro antibacterial experiments demonstrate that the organic-inorganic bio-heterojunctions possess the potent antibacterial capacity and effective bacterial eradication.Conclusion:This countermeasure shows great promise for application in infectious wound regeneration.展开更多
In this research, we report a bulk heterojunction（BHJ） solar cell consisting of a ternary blend system. Poly（3-hexylthiophene） P3 HT is used as a donor and [6,6]-phenyl C61-butyric acid methylester（PCBM） plays t...In this research, we report a bulk heterojunction（BHJ） solar cell consisting of a ternary blend system. Poly（3-hexylthiophene） P3 HT is used as a donor and [6,6]-phenyl C61-butyric acid methylester（PCBM） plays the role of acceptor whereas vanadyl 2,9,16,23-tetraphenoxy-29 H, 31H-phthalocyanine（VOPc Ph O） is selected as an ambipolar transport material. The materials are selected and assembled in such a fashion that the generated charge carriers could efficiently be transported rightwards within the blend. The organic BHJ solar cells consist of ITO/PEDOT：PSS/ternary BHJ blend/Al structure. The power conversion efficiencies of the ITO/ PEDOT：PSS/P3HT：PCBM/Al and ITO/PEDOT：PSS/P3HT：PCBM：VOPcPhO/Al solar cells are found to be 2.3% and 3.4%, respectively.展开更多
The combination of interface engineering and defect engineering is a promising strategy for developing new semiconducting surface-enhanced Raman scattering(SERS)substrate.Herein,an organic/inorganic hybrid g-C_(3)N_(4...The combination of interface engineering and defect engineering is a promising strategy for developing new semiconducting surface-enhanced Raman scattering(SERS)substrate.Herein,an organic/inorganic hybrid g-C_(3)N_(4)/TiO_(2-X)heterojunction with synchronous generation of strong interface effect and abundan surface oxygen vacancy(OV)defect was prepared by a simple sol-hydrothermal procedure with a help of urea.Due to the improved substrate-to-molecule charge transfer(CT)from joint contribution of high efficiency carrier separation induced by strong interface coupling effect and multiple CT paths derived from abundant surface OV,g-C_(3)N_(4)/TiO_(2-X)substrate exhibits greatly enhanced SERS effect for non-resonan4-mercaptobenzoic acid(4-MBA)probe.The enhancement factor of g-C_(3)N_(4)/TiO_(2-X)substrate for 4-MBA i as high as 5.57×10^(6),and the substrate exhibits ultra-high stability and excellent spectral reproducibility More meaningfully,the developed g-C_(3)N_(4)/TiO_(2-X)heterojunction can be used to execute an ultrasensitive detection for antibiotic residues in real water system,even comprehensive evaluation of multi-componen residues.展开更多
基金supported by the Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-049)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302800)the Fundamental Research Funds for the Central Universities(Grant No.WK3510000013)。
文摘Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11874244 and 11974222)。
文摘Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area was modulated by the optical field.Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer.The device was used as a photodetector in the OFF state but not in the ON state.The higher tunnelling electroresistance(~1.4×10^(4))in a lateral structured ferroelectric tunnelling junction was crucial,and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS_(2) Schottky junction.The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties.The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.
基金supported by the National Natural Science Foundation of China (Nos.52072152 and 51802126)Jiangsu University Jinshan Professor Fund,Jiangsu Specially-Appointed Professor Fund,the Open Fund from Guangxi Key Laboratory of Electrochemical Energy Materials,Zhenjiang“Jinshan Talents”Project 2021,China PostDoctoral Science Foundation (No.2022M721372)+1 种基金the“Doctor of Entrepreneurship and Innovation”in Jiangsu Province (No.JSSCBS20221197)the Postgraduate Research&Practice Innovation Program of Jiangsu Province (No.KYCX22_3645).
文摘In the quest for effective solutions to address Environ.Pollut.and meet the escalating energy demands,heterojunction photocatalysts have emerged as a captivating and versatile technology.These photocatalysts have garnered significant interest due to their wideranging applications,including wastewater treatment,air purification,CO_(2) capture,and hydrogen generation via water splitting.This technique harnesses the power of semiconductors,which are activated under light illumination,providing the necessary energy for catalytic reactions.With visible light constituting a substantial portion(46%)of the solar spectrum,the development of visible-light-driven semiconductors has become imperative.Heterojunction photocatalysts offer a promising strategy to overcome the limitations associated with activating semiconductors under visible light.In this comprehensive review,we present the recent advancements in the field of photocatalytic degradation of contaminants across diverse media,as well as the remarkable progress made in renewable energy production.Moreover,we delve into the crucial role played by various operating parameters in influencing the photocatalytic performance of heterojunction systems.Finally,we address emerging challenges and propose novel perspectives to provide valuable insights for future advancements in this dynamic research domain.By unraveling the potential of heterojunction photocatalysts,this reviewcontributes to the broader understanding of their applications and paves the way for exciting avenues of exploration and innovation.
基金supported by National Natural Science Foundation of China (Nos. 21804054, 21773080)Natural Science Foundation of Heilongjiang Province of China for Distinguished Young Scholars (No. JQ2019B002)+1 种基金Excellent Discipline Team Project of Jiamusi University (No. JDXKTD-2019007)Open Project of State Key Laboratory of Supramolecular Structure and Materials (No. sklssm2021026)。
文摘In this paper, CuO/TiO_(2) p-n heterojunction was developed as a new surface enhanced Raman scattering(SERS) substrate to magnify Raman signal of 4-mercaptobenzoic acid(4-MBA) molecule. In the heterojunction-molecule system, CuO as an “electron capsule” can not only offer more electrons to inject into the surface state energy level of TiO_(2) and consequently bring additional charge transfer, but also improve photogenerated carrier separation efficiency itself due to strong interfacial coupling in the interface of heterojunction, which together boost SERS performance of the heterojunction substrate. As expected,owing to the enhanced charge collection capacity and the improvement of photogenerated carrier separation efficiency derived from internal electric field and strong interface coupling provided in the interface of heterojunction, this substrate exhibits excellent SERS detection sensitivity towards 4-MBA, with a detection limit as low as 1 × 10^(-10)mol/L and an enhancement factor of 8.87 × 10~6.
基金supported by the National Key Research and Development program of China (Nos. 2024YFA1410700 and 2021YFA1200700)the National Natural Science Foundation of China (Nos. T2222025, 62174053, 62474065 and 52372120)+3 种基金the Natural Science Foundation of Chongqing (CSTB2024NSCQ-JQX0005)the Shanghai Science and Technology Innovation Action Plan (Nos. 24QA2702300 and 24YF2710400)the National Postdoctoral Program (GZB20240225)the Fundamental Research Funds for the Central Universities。
文摘Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.
文摘Solar-driven photocatalytic hydrogen production via water splitting is considered as one of the most promising green and sustainable strategies,with the potential to replace traditional fossil fuels[1,2].Generally,this photocatalytic reaction process includes the following steps:First,the semiconductor photocatalyst is photoexcited to generate photoinduced excitons on a femtosecond timescale.Next,the photoinduced excitons are separated into photogenerated electrons and holes,occurring within a femtosecond to picosecond timescale.Subsequently,only a small fraction of the photogenerated electrons and holes can overcome kinetic barriers,such as phonon scattering and bulk defects,to migrate to the surface。
基金supported by the National Natural Science Foundation of China(NSFC,No.62074048)the Key Research and Development Plan of Anhui Province(No.2022f04020007)the Natural Science Foundation of Anhui Province(No.2208085MF177)。
文摘In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.
基金the National Natural Science Foundation of China(No.22174163)the Hunan Provincial Science and Technology Plan Project,China(No.2019TP1001)the Innovation Driven Project of Central South University(No.2020CX002)。
文摘In this work,we developed a novel photoelectrochemical(PEC)sensor based on n-p organic semiconductor heterojunction for sensitive detecting MCF-7 cancer cells.BTA-C4 Ph and PM6 were designed as photoactive materials to form n-p heterojunction,which greatly enhanced the photoelectric conversion efficiency.Antibody-modified magnetic nanoparticles were utilized to capture and separate MCF-7 cells from samples.Detection of MCF-7 is ascribed to the loading of MCF-7 onto BTA-C4 Ph-PM6 modified electrode that resulted in the decrease of photocurrent intensity.The PEC immunosensor displayed a linear concentration ranging from 50 cell/m L to 1×10^(4) cell/m L with a limit of detection(LOD)of 41 cell/m L(S/N=3)for MCF-7.Additionally,the senor also exhibited good stability,excellent selectivity and prominent reproducibility.Furthermore,the sensor was successfully applied to detect MCF-7 in whole blood.This work illustrates that n-p heterojunction of organic semiconductor may find wide applications for the preparation of different photoelectrochemical sensors.
基金the Deanship of Scientific Research(DSR)at King Abdulaziz University,Jeddah(No.RG-72–130–42)DSR for technical and financial support。
文摘Recently,a new opinion was put forward on general design standards for S-scheme heterojunction photocatalyst.Four types of S-scheme heterojunctions were analyzed.Specifically,the critical understanding on the curved Fermi level at the interface of S-scheme heterojunction is helpful to strengthen and promote the basic theory of photocatalysis.
基金supported by the National Natural Science Foundation of China(Nos.22008185,21872023)Shaanxi Provincial Key Research and Development Program(No.2022GY-166)。
文摘With the rapid development of economy and modern industry,serious environmental pollution and energy shortage have become major urgent challenges to the human society.Photocatalysis is a promising technology to provide green energy.As a typical metal-free polymer photocatalyst,g-C_(3)N_(4) has attracted more and more attention due to its excellent performance.Unfortunately,the fast recombination of photo-induced charges,limited light response range as well as weak oxidation ability are still the key drawback that restrict the photocatalytic performance of g-C_(3)N_(4).These problems can be effectively addressed by constructing g-C_(3)N_(4)-based heterojunctions with two or more semiconductor materials,during which the respective advantages can be integrated.Up to now,the various oxidation semiconductor photocatalysts have been tried to construct the novel S-scheme heterojunction photocatalysts with g-C_(3)N_(4).Thus,this review provides a comprehensive introduction of g-C_(3)N_(4)-based S-scheme heterojunctions,including the main characteristics of the S-scheme heterojunction,photocatalytic mechanisms,design rules and preparation methods of g-C_(3)N_(4)-based S-scheme heterojunction photocatalysts.Moreover,this review summarizes recently reported works on the potential applications of g-C_(3)N_(4)-based S-scheme photocatalysts in various important photocatalytic reactions,including photocatalytic hydrogen production,photocatalytic degradation of contaminants,photo-reduction of CO_(2) into fuels,and photocatalytic sterilization.Finally,based on the current research progress,we propose some shortages in the preparation methods and applications of g-C_(3)N_(4)-based S-scheme heterojunctions,which are to be further investigated and resolved in this promising and creative research field.
基金financially supported by Jiana Foundation of Central South University(No.JNJJ201613)the National Natural Science Foundation of China(No.51404306)
文摘A novel ZnCo_2O_4/Bi_2O_3 heterojunction photocatalyst was prepared, and the formation of the heterojunction was confirmed via HRTEM. Photocatalytic activity of as-prepared samples was evaluated through photodegradation of malachite green(MG). The degradation results show that the as-prepared13% ZnCo_2O_4/Bi_2O_3 heterojunction photocatalyst exhibits higher activity than pure Bi_2O_3. The MG degradation rate for the as-prepared catalyst is as high as 94%. The enhanced photocatalytic activity is mainly attributed to the broad photoabsorption and low recombination rate of photogenerated electronhole pairs, which is driven by the photogene rated potential difference formed at the ZnCo_2O_4/Bi_2O_3 heterojunction interface.
文摘TiO2 nanoparticles were prepared using the hydrothermal method and modified with CgN to syn-thesize a Type-Ⅱheterojunction semiconductor photocatalyst,TiO2-C;Na.In addition,a carbon layerwas coated onto the TiO2 nanoparticles and the obtained material was uniformly covered on thesurface of CaNa to form an all-solid-state Z-scheme semiconductor photocatalyst,TiO2-C-C3N4,Through characterization by XRD,XPS,SEM,TEM,BET,photoelectrochemical experiments,UV-visible diffuse reflection,and PL spectroscopy,the charge transfer mechanism and band gappositions for the composite photocatalysts were analyzed.The Type-Ⅱand all-solid-state Z-schemeheterojunction structures were compared.By combining microscopic internal mechanisms withmacroscopic experimental phenomena,the relationship between performance and structure wasverified.Experimental methods were used to explore the adaptation degree of different photocata-lytic mechanisms using the same degradation system.This study highlights effective photocatalystdesign to meet the requirements for specific degradation conditions.
基金Project supported by the Scientific Research Program of Hunan Provincial Education Department,China(Grant No.18C0232)the International Cooperative Extension Program of Changsha University of Science and Technology,China(Grant No.2019IC35)
文摘The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current(SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarizationmodulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state(RS), which is formed by the double ferroelectric layer Ba TiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory(RRAM) devices based on ferroelectric materials.
基金National Key Research and Development Program (Nos. NKRDP 2016YFE0118400)the Key project of Science and Technology of Henan Province (No. 172102410062)+1 种基金National Natural Science Foundation of China (No. 61176008)National Natural Science Foundation of China Henan Provincial Joint Fund Key Project (No. U1604263)
文摘In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitutional accepter and donor concentration up to NA=5.0×10^17 cm^-3 and ND=9.0×10^16 cm^-3 for deep ultraviolet lasing was achieved.The structure was assumed to be grown over bulk AIN substrate and operate under a continuous wave at room temperature.Although there is an emphasizing of the suitability for using boron nitride wide band gap in the deep ultraviolet region,there is still a shortage of investigation about the ternary BGaN in aluminum-rich AIGaN alloys.Based on the simulation,an average local gain in quantum wells of 1946 cm^-1,the maximum emitted power of 2.4 W,the threshold current of 500 mA,a slope efficiency of 1.91 W/A as well as an average DC resistance for the V-I curve of(0.336Ω)had been observed.Along with an investigation regarding different EBL,designs were included with tapered and inverse tapered structure.Therefore,it had been found a good agreement with the published results for tapered EBL design,with an overweighting for a proposed inverse tapered EBL design.
基金supported by National Key Research and Development Program(2021YFB3600802)Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006)Guangdong Basic and Applied Basic Research Foundation(2022A1515110029)
文摘This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.
基金supported by the National Natural Science Foundation of China(Nos.21675022,21305065,91333110,31400751)Program from the Natural Science Foundation of Jiangsu Province(No.BK20160028,BK20140622)the Fundamental Research Funds for the Central Universities
文摘Porous graphite-phase polymeric carbon nitride（GPPCN）/TiO2 donor-acceptor heterojunction was facilely fabricated through the combination of a template technique with a co-calcination process,which exhibited much higher photoelectric activity compared to pristine carbon nitride and TiO2.The precursor of porous GPPCN（pGPPCN）,porous melem,was prepared by using a green template,calcium carbonate,which could be easily removed by diluted hydrochloride.The pGPPCN/TiO2 heterojunction was then obtained by the assembly and subsequent co-calcination of TiO2 nanoparticles with porous melem.The formation of pGPPCN/TiO2 donor-acceptor heterojunction prepared by this method showed improved surface area and light absorption.Moreover,the composite presented much higher photo-energy conversion activity than those of GPPCN,pGPPCN and TiO2,which could be mainly ascribed to the high charge carrier separation efficiency.This study provides a new approach for the design and development of various photocatalysts with high efficiency for applications in energy fields.
基金supported by the National Natural Science Foundation of China(Grant No.32250410309 and 52105582)Natural Science Foundation of Guangdong Province(Grant No.2022A1515010894 and 2022B0303040002)+1 种基金Fundamental Research Foundation of Shenzhen(JCYJ20210324095210030 and JCYJ20220818095810023)Shenzhen-Hong Kong-Macao S&T Program(Category C:SGDX20210823103200004)
文摘Extending the ionic conductivity is the pre-requisite of electrolytes in fuel cell technology for high-electrochemical performance.In this regard,the introduction of semiconductor-oxide materials and the approach of heterostructure formation by modulating energy bands to enhance ionic conduction acting as an electrolyte in fuel cell-device.Semiconductor(n-type;SnO_(2))plays a key role by introducing into p-type SrFe_(0.2)Ti_(0.8)O_(3-δ)(SFT)semiconductor perovskite materials to construct p-n heterojunction for high ionic conductivity.Therefore,two different composites of SFT and SnO_(2)are constructed by gluing p-and n-type SFT-SnO_(2),where the optimal composition of SFT-SnO_(2)(6∶4)heterostructure electrolyte-based fuel cell achieved excellent ionic conductivity 0.24 S cm^(-1)with power-output of 1004 mW cm^(-2)and high OCV 1.12 V at a low operational temperature of 500℃.The high power-output and significant ionic conductivity with durable operation of 54 h are accredited to SFT-SnO_(2)heterojunction formation including interfacial conduction assisted by a built-in electric field in fuel cell device.Moreover,the fuel conversion efficiency and considerable Faradaic efficiency reveal the compatibility of SFT-SnO_(2)heterostructure electrolyte and ruled-out short-circuiting issue.Further,the first principle calculation provides sufficient information on structure optimization and energy-band structure modulation of SFT-SnO_(2).This strategy will provide new insight into semiconductor-based fuel cell technology to design novel electrolytes.
基金jointly funded by the National Natural Science Foundation of China(32271392,52302351)China Postdoctoral Science Foundation(2023M732477)+1 种基金Sichuan University Postdoctoral Interdisciplinary Innovation Fund(JCXK2205)Sichuan University Post-Doctor Research Project(2023SCU12116).
文摘Background:Organic semiconductors have attracted much attention due to their excellent biocompatibility,tunable electronic structure,low cost,and antimicrobial phototherapy.However,owing to the high exciton binding energies,organic semiconductor is constrained by their short exciton diffusion length,leading to inefficient transportation of photogenerated carriers and deficient antibacterial capability.Methods:To address this issue,a quad-channel synergistic antibacterial nano-platform of copper sulfide/organic semiconductor(CuS/IEICO-4F)heterojunctions with enhanced photocatalytic performance is designed and manufactured,which can produce localized heat and raise the levels of extracellular reactive oxygen species under near-infrared laser irradiation.Simultaneously,the released Cu2+can consume intrabacterial glutathione,destroying the defense system and ultimately leading to bacterial inactivation.Results:In vitro antibacterial experiments demonstrate that the organic-inorganic bio-heterojunctions possess the potent antibacterial capacity and effective bacterial eradication.Conclusion:This countermeasure shows great promise for application in infectious wound regeneration.
基金made possible by PDRA(Grant No.PDRA1-0117-14109)from the Qatar National Research Fund(a member of Qatar Foundation)
文摘In this research, we report a bulk heterojunction（BHJ） solar cell consisting of a ternary blend system. Poly（3-hexylthiophene） P3 HT is used as a donor and [6,6]-phenyl C61-butyric acid methylester（PCBM） plays the role of acceptor whereas vanadyl 2,9,16,23-tetraphenoxy-29 H, 31H-phthalocyanine（VOPc Ph O） is selected as an ambipolar transport material. The materials are selected and assembled in such a fashion that the generated charge carriers could efficiently be transported rightwards within the blend. The organic BHJ solar cells consist of ITO/PEDOT：PSS/ternary BHJ blend/Al structure. The power conversion efficiencies of the ITO/ PEDOT：PSS/P3HT：PCBM/Al and ITO/PEDOT：PSS/P3HT：PCBM：VOPcPhO/Al solar cells are found to be 2.3% and 3.4%, respectively.
基金supported by National Natural Science Foundation of China(Nos.21804054,21773080)Natural Science Foundation of Heilongjiang Province of China for Distinguished Young Scholars(No.JQ2019B002)Scientific Research Project of Qiqihar University(Nos.130412223001,130412223002)。
文摘The combination of interface engineering and defect engineering is a promising strategy for developing new semiconducting surface-enhanced Raman scattering(SERS)substrate.Herein,an organic/inorganic hybrid g-C_(3)N_(4)/TiO_(2-X)heterojunction with synchronous generation of strong interface effect and abundan surface oxygen vacancy(OV)defect was prepared by a simple sol-hydrothermal procedure with a help of urea.Due to the improved substrate-to-molecule charge transfer(CT)from joint contribution of high efficiency carrier separation induced by strong interface coupling effect and multiple CT paths derived from abundant surface OV,g-C_(3)N_(4)/TiO_(2-X)substrate exhibits greatly enhanced SERS effect for non-resonan4-mercaptobenzoic acid(4-MBA)probe.The enhancement factor of g-C_(3)N_(4)/TiO_(2-X)substrate for 4-MBA i as high as 5.57×10^(6),and the substrate exhibits ultra-high stability and excellent spectral reproducibility More meaningfully,the developed g-C_(3)N_(4)/TiO_(2-X)heterojunction can be used to execute an ultrasensitive detection for antibiotic residues in real water system,even comprehensive evaluation of multi-componen residues.
