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Innovative stress-release method for lowstress flexible Al_(2)O_(3)encapsulation films in OLED applications
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作者 Guanran Wang Zhenyu Wang +2 位作者 Jianyang Ren Zhijun Wu Yu Duan 《npj Flexible Electronics》 2025年第1期776-785,共10页
This study presents a low residual tensile stress,flexible thin film encapsulation with a 2 mm bending radius based on atomic layer deposition(ALD),specifically plasma-enhanced ALD(PEALD).By utilizing polydimethylsilo... This study presents a low residual tensile stress,flexible thin film encapsulation with a 2 mm bending radius based on atomic layer deposition(ALD),specifically plasma-enhanced ALD(PEALD).By utilizing polydimethylsiloxane(PDMS)to release stress during deposition,we achieved a wrinkled morphology film that reduces stress magnitude from 10^(3)to 10^(2)compared to conventional Al_(2)O_(3)films.This wrinkled film enhances optical modulation to light extraction,increasing the external quantum efficiency(EQE)of organic light-emitting diode(OLED)by up to 14.95%.The water vapor transmission rate(WVTR)is 4.49×10^(-5)g/m^(2)/day at 60℃/90%RH,and the film retains about 90%of its initial properties after 10,000 bending cycles.This work introduces a novel solution for flexible ALD encapsulation,demonstrating ultra-flexible properties while improving device efficiency. 展开更多
关键词 optical modulation wrinkled film atomic layer deposition ald specifically light extractionincreasing stress release method release stress wrinkled morphology film stress magnitude
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