One of the core works of analyzing Electrochemical Impedance Spectroscopy(EIS)data is to select an appropriate equivalent circuit model to quantify the parameters of the electrochemical reaction process.However,this p...One of the core works of analyzing Electrochemical Impedance Spectroscopy(EIS)data is to select an appropriate equivalent circuit model to quantify the parameters of the electrochemical reaction process.However,this process often relies on human experience and judgment,which will introduce subjectivity and error.In this paper,an intelligent approach is proposed for matching EIS data to their equivalent circuits based on the Random Forest algorithm.It can automatically select the most suitable equivalent circuit model based on the characteristics and patterns of EIS data.Addressing the typical scenario of metal corrosion,an atmospheric corrosion EIS dataset of low-carbon steel is constructed in this paper,which includes five different corrosion scenarios.This dataset was used to validate and evaluate the pro-posed method in this paper.The contributions of this paper can be summarized in three aspects:(1)This paper proposes a method for selecting equivalent circuit models for EIS data based on the Random Forest algorithm.(2)Using authentic EIS data collected from metal atmospheric corrosion,the paper es-tablishes a dataset encompassing five categories of metal corrosion scenarios.(3)The superiority of the proposed method is validated through the utilization of the established authentic EIS dataset.The ex-periment results demonstrate that,in terms of equivalent circuit matching,this method surpasses other machine learning algorithms in both precision and robustness.Furthermore,it shows strong applicability in the analysis of EIS data.展开更多
Radio frequency capacitively coupled plasmas(RF CCPs)operated in Ar/O_(2)gas mixtures which are widely adopted in microelectronics,display,and photovoltaic industry,are investigated based on an equivalent circuit mode...Radio frequency capacitively coupled plasmas(RF CCPs)operated in Ar/O_(2)gas mixtures which are widely adopted in microelectronics,display,and photovoltaic industry,are investigated based on an equivalent circuit model coupled with a global model.This study focuses on the effects of singlet metastable molecule O_(2)(b^(1)∑_(8)^(+)),highly excited Herzberg states O_(2)(A^(3)∑_(u)^(+),A^(3)△_(u),c^(1)∑_(u)^(-)),and the negative ion O_(2)^(-),which are usually neglected in simulation studies.Specifically,their impact on particle densities,electronegativity,electron temperature,voltage drop across the sheath,and absorbed power in the discharge is analyzed.The results indicate that O_(2)(b^(1)∑_(8)^(+))and O_(2)^(-)exhibit relatively high densities in argon-oxygen discharges.While O_(2)(A^(3)∑_(u)^(+),A^(3)△_(u),c^(1)∑_(u)^(-))play a critical role in O_(2)b1S+g production,especially at higher pressure.The inclusion of these particles reduces the electronegativity,electron temperature,and key species densities,especially the O^(-)and O^(*)densities.Moreover,the sheath voltage drop,as well as the inductance and resistance of the plasma bulk are enhanced,while the sheath dissipation power and total absorbed power decrease slightly.With the increasing pressure,the influence of these particles on the discharge properties becomes more significant.The study also explores the generation and loss of main neutral species and charged particles within the pressure range of 20 mTorr-100 mTorr(1 Torr=1.33322×10^(2)Pa),offering insights into essential and non-essential reactions for future low-pressure O_(2)and Ar/O_(2)CCP discharge modeling.展开更多
A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalen...A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.展开更多
An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyze...An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.展开更多
A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance i...A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.展开更多
An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEH...An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.展开更多
Aim To provide technical parameters for development of quartz gyro. Methods Theory of elastic beam was applied to piezoelectric beam. Based on the concept of equivalent volume force and energy conservation, the f...Aim To provide technical parameters for development of quartz gyro. Methods Theory of elastic beam was applied to piezoelectric beam. Based on the concept of equivalent volume force and energy conservation, the formula of electrode location efficiency was derived. And the electric system was compared with the dynamic one according to the principle of equivalent circuit for piezoelectric crystal, and the general formulae of the parameters for the equivalent circuit, R n L n C n , were derived. Results and Conclusion Optimum electrode location is chosen, and the derived equivalent circuit parameters are the theoretical base of the circuit design for quartz gyro.展开更多
A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model e...A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.展开更多
A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters fo...A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.展开更多
In this paper, a practical equivalent circuit of an active flux-controlled memristor characterized by smooth piecewise-quadratic nonlinearity is designed and an experimental chaotic memristive circuit is implemented. ...In this paper, a practical equivalent circuit of an active flux-controlled memristor characterized by smooth piecewise-quadratic nonlinearity is designed and an experimental chaotic memristive circuit is implemented. The chaotic memristive circuit has an equilibrium set and its stability is dependent on the initial state of the memristor. The initial state-dependent and the circuit parameter-dependent dynamics of the chaotic memristive circuit are investigated via phase portraits, bifurcation diagrams and Lyapunov exponents. Both experimental and simulation results validate the proposed equivalent circuit realization of the active flux-controlled memristor.展开更多
With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in ...With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.展开更多
Passive intermodulation（PIM） has gradually become a serious electromagnetic interference due to the development of high-power and high-sensitivity RF/microwave communication systems, especially large deployable mesh...Passive intermodulation（PIM） has gradually become a serious electromagnetic interference due to the development of high-power and high-sensitivity RF/microwave communication systems, especially large deployable mesh reflector antennas. This paper proposes a field-circuit coupling method to analyze the PIM level of mesh reflectors. With the existence of many metal–metal（MM） contacts in mesh reflectors, the contact nonlinearity becomes the main reason for PIM generation. To analyze these potential PIM sources, an equivalent circuit model including nonlinear components is constructed to model a single MM contact so that the transient current through the MM contact point induced by incident electromagnetic waves can be calculated. Taking the electric current as a new electromagnetic wave source, the far-field scattering can be obtained by the use of electromagnetic numerical methods or the communication link method. Finally, a comparison between simulation and experimental results is illustrated to verify the validity of the proposed method.展开更多
In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇...In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇s current and voltage law. First, parameters are obtained from the I-V （current-voltage） curves for typical monocrystalline silicon solar cells （125 mmx 125 mm）. Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents （Ishl and Ish2）, diode currents （/D1 and/]：）2）, and load current （IL） for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.展开更多
A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships （VCRs） between two parallel memristive circuits - a parallel memristor and ...A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships （VCRs） between two parallel memristive circuits - a parallel memristor and capacitor circuit （the parallel MC circuit）, and a parallel memristor and inductor circuit （the parallel ML circuit） - are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and exper/mental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results.展开更多
The equivalent circuit with complex physical constants for a piezoelectric ceramic in thickness mode is established. In the equivalent circuit, electric components （equivalent circuit parameters） are connected to re...The equivalent circuit with complex physical constants for a piezoelectric ceramic in thickness mode is established. In the equivalent circuit, electric components （equivalent circuit parameters） are connected to real and imaginary parts of complex physical coefficients of piezoelectric materials. Based on definitions of dissipation factors, three of them （dielectric, elastic and piezoelectric dissipation factors） are represented by equivalent circuit parameters. Since the equivalent circuit parameters are detectable, the dissipation factors can be easily obtained. In the experiments, the temperature and the stress responses of the three dissipation factors are measured.展开更多
Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive...Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.展开更多
Electrochemical quartz crystal impedance system (EQCIS) which allows in situ dynamic quartz crystal impedance measurement in an electrochemical experiment was developed by combining an HP 4395A Network/Spectrum/Impeda...Electrochemical quartz crystal impedance system (EQCIS) which allows in situ dynamic quartz crystal impedance measurement in an electrochemical experiment was developed by combining an HP 4395A Network/Spectrum/Impedance analyzer with an EG&G M283 potentiostat. Equivalent circuit parameters of crystal resonance change significantly during electrodeposition and dissolution of copper in 0.1 mol/L H2SO4 aqueous solution in a cyclic potential sweep experiment, which is explained with an overall picture of mass loading, solution density and viscosity, etc..展开更多
With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is pa...With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.展开更多
To develop real world memristor application circuits, an equivalent circuit model which imitates memductance （mem- ory conductance） of the HP memristor is presented. The equivalent circuit can be used for breadboard...To develop real world memristor application circuits, an equivalent circuit model which imitates memductance （mem- ory conductance） of the HP memristor is presented. The equivalent circuit can be used for breadboard experiments for various application circuit designs of memristor. Based on memductance of the realistic HP memristor and Chua＇s circuit a new chaotic oscillator is designed. Some basic dynamical behaviors of the oscillator, including equilibrium set, Lyapunov exponent spectrum, and bifurcations with various circuit parameters are investigated theoretically and numerically. To con- firm the correction of the proposed oscillator an analog circuit is designed using the proposed equivalent circuit model of an HP memristor, and the circuit simulations and the experimental results are given.展开更多
The uniform cauliflower-like ZnO films were deposited on the conducting substrate by a chemical bath deposition in urea/water solution. The film structure and morphology were characterized by X-ray diffraction, thermo...The uniform cauliflower-like ZnO films were deposited on the conducting substrate by a chemical bath deposition in urea/water solution. The film structure and morphology were characterized by X-ray diffraction, thermo- gravimetric differential thermal analysis, energy dispersive spectroscopy, selected area electron diffraction, field emission scanning electron microscopy and high resolution transmission electron microscopy. The average diameter of ZnO nanoparticles and the petal thickness were 25 nm and 8 μm, respectively. Dye- sensitized solar cells based on the cauliflower-like ZnO film electrode showed the short-circuit current density of 6.08 mA/cm2, the open-circuit photovoltage of 0.66 V, the fill factor of 0.55 and the overall conversion efficiency of 2.18%. The equivalent circuit of cells based on the ZnO film electrodes was measured by the electrochemical impedance spectroscopy. Furthermore, the analysis of equivalent circuit provided the relationship between the cell performance and the interracial resistance, such as the shunt resistance and the series resistance.展开更多
基金support of the project from the National Key R&D Program of China,Research and Application of Sensing System for Cross-regional Complex Oil&Gas Pipeline Network Safe and Efficiency Operational Status Monitoring(Grant No.2022YFB3207603).
文摘One of the core works of analyzing Electrochemical Impedance Spectroscopy(EIS)data is to select an appropriate equivalent circuit model to quantify the parameters of the electrochemical reaction process.However,this process often relies on human experience and judgment,which will introduce subjectivity and error.In this paper,an intelligent approach is proposed for matching EIS data to their equivalent circuits based on the Random Forest algorithm.It can automatically select the most suitable equivalent circuit model based on the characteristics and patterns of EIS data.Addressing the typical scenario of metal corrosion,an atmospheric corrosion EIS dataset of low-carbon steel is constructed in this paper,which includes five different corrosion scenarios.This dataset was used to validate and evaluate the pro-posed method in this paper.The contributions of this paper can be summarized in three aspects:(1)This paper proposes a method for selecting equivalent circuit models for EIS data based on the Random Forest algorithm.(2)Using authentic EIS data collected from metal atmospheric corrosion,the paper es-tablishes a dataset encompassing five categories of metal corrosion scenarios.(3)The superiority of the proposed method is validated through the utilization of the established authentic EIS dataset.The ex-periment results demonstrate that,in terms of equivalent circuit matching,this method surpasses other machine learning algorithms in both precision and robustness.Furthermore,it shows strong applicability in the analysis of EIS data.
基金supported by the National Natural Science Foundation of China(Grant Nos.12020101005,12475202,12347131,and 12405289).
文摘Radio frequency capacitively coupled plasmas(RF CCPs)operated in Ar/O_(2)gas mixtures which are widely adopted in microelectronics,display,and photovoltaic industry,are investigated based on an equivalent circuit model coupled with a global model.This study focuses on the effects of singlet metastable molecule O_(2)(b^(1)∑_(8)^(+)),highly excited Herzberg states O_(2)(A^(3)∑_(u)^(+),A^(3)△_(u),c^(1)∑_(u)^(-)),and the negative ion O_(2)^(-),which are usually neglected in simulation studies.Specifically,their impact on particle densities,electronegativity,electron temperature,voltage drop across the sheath,and absorbed power in the discharge is analyzed.The results indicate that O_(2)(b^(1)∑_(8)^(+))and O_(2)^(-)exhibit relatively high densities in argon-oxygen discharges.While O_(2)(A^(3)∑_(u)^(+),A^(3)△_(u),c^(1)∑_(u)^(-))play a critical role in O_(2)b1S+g production,especially at higher pressure.The inclusion of these particles reduces the electronegativity,electron temperature,and key species densities,especially the O^(-)and O^(*)densities.Moreover,the sheath voltage drop,as well as the inductance and resistance of the plasma bulk are enhanced,while the sheath dissipation power and total absorbed power decrease slightly.With the increasing pressure,the influence of these particles on the discharge properties becomes more significant.The study also explores the generation and loss of main neutral species and charged particles within the pressure range of 20 mTorr-100 mTorr(1 Torr=1.33322×10^(2)Pa),offering insights into essential and non-essential reactions for future low-pressure O_(2)and Ar/O_(2)CCP discharge modeling.
基金Project(2012BAE08B09)supported by the National Key Technology R&D Program of China
文摘A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.
文摘An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.
文摘A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.
文摘An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.
文摘Aim To provide technical parameters for development of quartz gyro. Methods Theory of elastic beam was applied to piezoelectric beam. Based on the concept of equivalent volume force and energy conservation, the formula of electrode location efficiency was derived. And the electric system was compared with the dynamic one according to the principle of equivalent circuit for piezoelectric crystal, and the general formulae of the parameters for the equivalent circuit, R n L n C n , were derived. Results and Conclusion Optimum electrode location is chosen, and the derived equivalent circuit parameters are the theoretical base of the circuit design for quartz gyro.
文摘A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.
文摘A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.
基金supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2009105)
文摘In this paper, a practical equivalent circuit of an active flux-controlled memristor characterized by smooth piecewise-quadratic nonlinearity is designed and an experimental chaotic memristive circuit is implemented. The chaotic memristive circuit has an equilibrium set and its stability is dependent on the initial state of the memristor. The initial state-dependent and the circuit parameter-dependent dynamics of the chaotic memristive circuit are investigated via phase portraits, bifurcation diagrams and Lyapunov exponents. Both experimental and simulation results validate the proposed equivalent circuit realization of the active flux-controlled memristor.
基金Project(51507073)supported by the National Natural Science Foundation of China。
文摘With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.
文摘Passive intermodulation（PIM） has gradually become a serious electromagnetic interference due to the development of high-power and high-sensitivity RF/microwave communication systems, especially large deployable mesh reflector antennas. This paper proposes a field-circuit coupling method to analyze the PIM level of mesh reflectors. With the existence of many metal–metal（MM） contacts in mesh reflectors, the contact nonlinearity becomes the main reason for PIM generation. To analyze these potential PIM sources, an equivalent circuit model including nonlinear components is constructed to model a single MM contact so that the transient current through the MM contact point induced by incident electromagnetic waves can be calculated. Taking the electric current as a new electromagnetic wave source, the far-field scattering can be obtained by the use of electromagnetic numerical methods or the communication link method. Finally, a comparison between simulation and experimental results is illustrated to verify the validity of the proposed method.
基金Project supported by the National High Technology Research and Development Program of China (Grant No.2012AA050302)the National Natural Science Foundation of China (Grant Nos.61076059 and 51202301)the Science & Technology Research Project of Guangdong Province,China (Grant No.2011A032304001)
文摘In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇s current and voltage law. First, parameters are obtained from the I-V （current-voltage） curves for typical monocrystalline silicon solar cells （125 mmx 125 mm）. Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents （Ishl and Ish2）, diode currents （/D1 and/]：）2）, and load current （IL） for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.
基金supported by the National Natural Science Foundation of China (Grant No. 51277017)the Natural Science Foundation of Jiangsu Province,China(Grant No. BK2012583)
文摘A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships （VCRs） between two parallel memristive circuits - a parallel memristor and capacitor circuit （the parallel MC circuit）, and a parallel memristor and inductor circuit （the parallel ML circuit） - are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and exper/mental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results.
基金Project supported by the National Natural Science Foundation of China （Grant No 50278098）.
文摘The equivalent circuit with complex physical constants for a piezoelectric ceramic in thickness mode is established. In the equivalent circuit, electric components （equivalent circuit parameters） are connected to real and imaginary parts of complex physical coefficients of piezoelectric materials. Based on definitions of dissipation factors, three of them （dielectric, elastic and piezoelectric dissipation factors） are represented by equivalent circuit parameters. Since the equivalent circuit parameters are detectable, the dissipation factors can be easily obtained. In the experiments, the temperature and the stress responses of the three dissipation factors are measured.
基金supported by the National Natural Science Foundation of China(Grant No.51277017)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK2012583)
文摘Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.
文摘Electrochemical quartz crystal impedance system (EQCIS) which allows in situ dynamic quartz crystal impedance measurement in an electrochemical experiment was developed by combining an HP 4395A Network/Spectrum/Impedance analyzer with an EG&G M283 potentiostat. Equivalent circuit parameters of crystal resonance change significantly during electrodeposition and dissolution of copper in 0.1 mol/L H2SO4 aqueous solution in a cyclic potential sweep experiment, which is explained with an overall picture of mass loading, solution density and viscosity, etc..
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61434006 and 61704189)the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences。
文摘With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61271064 and 60971046)the Natural Science Foundation of Zhejiang Province,China(Grant No.LZ12F01001)the Program for Zhejiang Leading Team of Science and Technology Innovation,China(Grant No.2010R50010-07)
文摘To develop real world memristor application circuits, an equivalent circuit model which imitates memductance （mem- ory conductance） of the HP memristor is presented. The equivalent circuit can be used for breadboard experiments for various application circuit designs of memristor. Based on memductance of the realistic HP memristor and Chua＇s circuit a new chaotic oscillator is designed. Some basic dynamical behaviors of the oscillator, including equilibrium set, Lyapunov exponent spectrum, and bifurcations with various circuit parameters are investigated theoretically and numerically. To con- firm the correction of the proposed oscillator an analog circuit is designed using the proposed equivalent circuit model of an HP memristor, and the circuit simulations and the experimental results are given.
基金support of the National Basic Research Program of China (973 Program,No.2013CB932902)the National Natural Science Foundation of China (No. 21173042)+3 种基金the National Natural Science Foundation of Jiangsu (No. BK201123694)the National Natural Science Foundation of Hebei (No.B2012402006)the Jiangsu Key Laboratory of Environmental Material and Environmental Engineering (No.JHCG201012)the Foundation of Southeast of University (Nos.3212001102 and 3212002205)
文摘The uniform cauliflower-like ZnO films were deposited on the conducting substrate by a chemical bath deposition in urea/water solution. The film structure and morphology were characterized by X-ray diffraction, thermo- gravimetric differential thermal analysis, energy dispersive spectroscopy, selected area electron diffraction, field emission scanning electron microscopy and high resolution transmission electron microscopy. The average diameter of ZnO nanoparticles and the petal thickness were 25 nm and 8 μm, respectively. Dye- sensitized solar cells based on the cauliflower-like ZnO film electrode showed the short-circuit current density of 6.08 mA/cm2, the open-circuit photovoltage of 0.66 V, the fill factor of 0.55 and the overall conversion efficiency of 2.18%. The equivalent circuit of cells based on the ZnO film electrodes was measured by the electrochemical impedance spectroscopy. Furthermore, the analysis of equivalent circuit provided the relationship between the cell performance and the interracial resistance, such as the shunt resistance and the series resistance.
