The two-dimensional van der Waals layered semiconductor In_(2)Se_(3) has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(...The two-dimensional van der Waals layered semiconductor In_(2)Se_(3) has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(2)Se_(3) typically stabilizes in three distinct phases:α-,β′-,and β^(*)-In_(2)Se_(3),each dominant within specific temperature ranges.Although the crystal structures and ferroelectric properties of these phases have been widely studied,the unambiguous assignment of their in-plane and out-of-plane ferroelectric behaviors,as well as the mechanisms governing their phase transitions,remains a subject of active debate.In this study,we investigate the evolution of atomic and electronic structures in molecular beam epitaxy-grown ultrathin In_(2)Se_(3) films through correlated microstructural and macroscopic physical property analysis.By employing scanning tunneling microscopy/spectroscopy,temperature-dependent Raman spectroscopy,and piezoresponse force microscopy,we demonstrate a reversible temperature-induced phase transition between the in-plane ferroelectric β^(*)and antiferroelectric β′phases.Furthermore,we confirm robust out-of-plane ferroelectric polarization in the as-grown films and achieve an electric-field-driven transition from the β^(*)to β′phase.Our findings not only advance the fundamental understanding of phase transitions and polarization evolution in two-dimensional semiconductors but also open new avenues for the design of tunable,non-volatile ferroelectric memory devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.92365203,12534013,12174096,and 12474167)the Hunan Provincial Science Fund for Distinguished Young Scholars(Grant No.2022JJ10060)+1 种基金the Science and Technology Innovation Program of Hunan Province(Grant Nos.2025ZYJ001 and 2021RC4026)the Science Fund for Self-initiated Innovation of NUDT。
文摘The two-dimensional van der Waals layered semiconductor In_(2)Se_(3) has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(2)Se_(3) typically stabilizes in three distinct phases:α-,β′-,and β^(*)-In_(2)Se_(3),each dominant within specific temperature ranges.Although the crystal structures and ferroelectric properties of these phases have been widely studied,the unambiguous assignment of their in-plane and out-of-plane ferroelectric behaviors,as well as the mechanisms governing their phase transitions,remains a subject of active debate.In this study,we investigate the evolution of atomic and electronic structures in molecular beam epitaxy-grown ultrathin In_(2)Se_(3) films through correlated microstructural and macroscopic physical property analysis.By employing scanning tunneling microscopy/spectroscopy,temperature-dependent Raman spectroscopy,and piezoresponse force microscopy,we demonstrate a reversible temperature-induced phase transition between the in-plane ferroelectric β^(*)and antiferroelectric β′phases.Furthermore,we confirm robust out-of-plane ferroelectric polarization in the as-grown films and achieve an electric-field-driven transition from the β^(*)to β′phase.Our findings not only advance the fundamental understanding of phase transitions and polarization evolution in two-dimensional semiconductors but also open new avenues for the design of tunable,non-volatile ferroelectric memory devices.
