Bismuth sodium titanate(BNT)-based piezoelectric materials are the most promising candidates for leadfree actuator applications.With the request for integration and size miniaturization of devices,it is urgent to deve...Bismuth sodium titanate(BNT)-based piezoelectric materials are the most promising candidates for leadfree actuator applications.With the request for integration and size miniaturization of devices,it is urgent to develop thinfilms for microdevices to be compatible with semiconductor processes.Through composition engineering,BNT-based thinfilms were fabricated on silicon substrates,with ultra-high strain response and negligible hysteresis in strain curves.The DC-dependent and temperaturedependent dielectric properties were collected to investigate the relaxor state of thinfilms.The structure and polarization transition and evolution as a function of electricfield and time were analyzed based on the electric characterization,in-situ Raman measurements,and dynamics PFM.The reversible phase transition and polarization order-disorder transformation are the most significant features for reaching a large strain of>1.6%in BNT-based thinfilms.展开更多
基金the National Natural Science Foundation of China(Grant No.51902246,82327810)the China National Key R&D Program(2021YFB3201803)+2 种基金Natural Science Fundamental Research Project of Shaanxi Province of China(No.2023-JC-QN-0709)We acknowledge Instrument Analysis Center of Xi'an Jiaotong University for the assistance with Raman analysisWe acknowledge Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education&International Center for Dielectric Research of Xi'an Jiaotong University for the assistance with SEM measurement.
文摘Bismuth sodium titanate(BNT)-based piezoelectric materials are the most promising candidates for leadfree actuator applications.With the request for integration and size miniaturization of devices,it is urgent to develop thinfilms for microdevices to be compatible with semiconductor processes.Through composition engineering,BNT-based thinfilms were fabricated on silicon substrates,with ultra-high strain response and negligible hysteresis in strain curves.The DC-dependent and temperaturedependent dielectric properties were collected to investigate the relaxor state of thinfilms.The structure and polarization transition and evolution as a function of electricfield and time were analyzed based on the electric characterization,in-situ Raman measurements,and dynamics PFM.The reversible phase transition and polarization order-disorder transformation are the most significant features for reaching a large strain of>1.6%in BNT-based thinfilms.
