A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the inf...A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.展开更多
基金The authors are grateful for the support from the ＂Thousands Talents＂ Program for Pioneer Researchers and Their Innovation Teams, China the President＇s Funding of the Chinese Academy of Sciences+3 种基金 the National Natural Science Foundation of China （Nos. 51272238, 21321062, 51432005 and 61405040） the Innovation Talent Project of Henan Province （No. 13HASTIT020） the Talent Project of Zhengzhou University （No. ZDGD13001） and the Surface Engineering Key Lab of LIPCAST the Tsinghua University Initiative Scientific Research Program, the National Natural Science Foundation of China （No. 61306105）.
文摘A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.
