Embedded memory,which heavily relies on the manufacturing process,has been widely adopted in various industrial applications.As the field of embedded memory continues to evolve,innovative strategies are emerging to en...Embedded memory,which heavily relies on the manufacturing process,has been widely adopted in various industrial applications.As the field of embedded memory continues to evolve,innovative strategies are emerging to enhance performance.Among them,resistive random access memory(RRAM)has gained significant attention due to its numerousadvantages over traditional memory devices,including high speed(<1 ns),high density(4 F^(2)·n^(-1)),high scalability(~nm),and low power consumption(~pJ).This review focuses on the recent progress of embedded RRAM in industrial manufacturing and its potentialapplications.It provides a brief introduction to the concepts and advantages of RRAM,discusses the key factors that impact its industrial manufacturing,and presents the commercial progress driven by cutting-edge nanotechnology,which has been pursued by manysemiconductor giants.Additionally,it highlights the adoption of embedded RRAM in emerging applications within the realm of the Internet of Things and future intelligent computing,with a particular emphasis on its role in neuromorphic computing.Finally,the review discusses thecurrent challenges and provides insights into the prospects of embedded RRAM in the era of big data and artificial intelligence.展开更多
With the development of satellite based remote sensors, embedded systems become moreand more popular in space camera electronics. Static Random Access Memory（SRAM） is one kind of themost widely used memories due to ...With the development of satellite based remote sensors, embedded systems become moreand more popular in space camera electronics. Static Random Access Memory（SRAM） is one kind of themost widely used memories due to its merits of high efficiency and low power dissipation, but testing itsfunction still depends on writing testing modules with hardware description language, which results in lowdeveloping efficiency and low reliability. In this paper, an embedded testing method is proposed, which isbased on MicroBlaze and its speed increasing function design. Implementation of the test method is basedon reusable Intellectual Property（IP） technique and greatly improves data transfer speed. With this method,secondary development of SRAM test system can be made in application layer instead of fundamentallogical layer, which simplifies the system design. It is not only more efficient and more reliable, but alsoeasier to transplant, which greatly reduces test design cost. The validity and feasibility of the method havebeen proved by test results.展开更多
This paper presents a new encryption embedded processor aimed at the application requirement of wireless sensor network （WSN）. The new encryption embedded processor not only offers Rivest Shamir Adlemen （RSA）, Adv...This paper presents a new encryption embedded processor aimed at the application requirement of wireless sensor network （WSN）. The new encryption embedded processor not only offers Rivest Shamir Adlemen （RSA）, Advanced Encryption Standard （AES）, 3 Data Encryption Standard （3 DES） and Secure Hash Algorithm 1 （SHA - 1 ） security engines, but also involves a new memory encryption scheme. The new memory encryption scheme is implemented by a memory encryption cache （MEC）, which protects the confidentiality of the memory by AES encryption. The experi- ments show that the new secure design only causes 1.9% additional delay on the critical path and cuts 25.7% power consumption when the processor writes data back. The new processor balances the performance overhead, the power consumption and the security and fully meets the wireless sensor environment requirement. After physical design, the new encryption embedded processor has been successfully tape-out.展开更多
Operational analytics is all about answering business questions while doing business and supporting business users across the organization, from shop floor users to management and executives. Therefore, business trans...Operational analytics is all about answering business questions while doing business and supporting business users across the organization, from shop floor users to management and executives. Therefore, business transactions and analytics must co-exist together in a single platform to empower business users to drive insights, make decisions, and complete business processes in a single application and using a single source of facts without toggling between multiple applications. Traditionally transactional systems and analytics were maintained separately to improve throughput of the transactional system and that certainly introduced latency in decision making. However, with innovation in the SAP HANA platform, SAP S/4HANA embedded analytics enables business users, business analysts, and management to perform real-time analytics on live transactional data. This paper reviews technical architecture and key components of SAP S/4HANA embedded analytics. This paper reviews technical architecture and key components of SAP S/4HANA embedded analytics.展开更多
Emerging non-volatile memories(NVMs),including resistive random-access memory(RRAM)and magnetic random-access memory(MRAM),have been promising solutions for intelligent embedded systems.With the non-volatility and low...Emerging non-volatile memories(NVMs),including resistive random-access memory(RRAM)and magnetic random-access memory(MRAM),have been promising solutions for intelligent embedded systems.With the non-volatility and low leakage power consumption,the industry-based embedded NVMs can be used to develop energy-efficient artificial intelligent processors.However,industry-based NVMs typically have low endurance with only 10^(4) to 10^(6) maximum write times,shortening the lifetime of embedded systems.In addition,non-uniform write distribution to physical addresses onto NVMs may further reduce system lifetime.Furthermore,several intentional attacks,such as malicious writing,may impair embedded NVMs.In this paper,we present a novel wear-leveling technique based on row-column data movement,SENTRY,to extend system lifetime.We explore industry-based embedded NVM chips and analyze practical data distributions of several tasks.We design a coordinate system based moving method with negligible storage overhead for more efficient data movement.The experiment shows that SENTRY achieves a 96.07%life utilization rate with 1.47%data movement overhead.In addition,SENTRY increases the endurance margin of memory by 6048x compared with an unprotected baseline(without SENTRY)under malicious address attacks.展开更多
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state throu...In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.展开更多
This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage eliminat...This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.展开更多
基金supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2021B0909060002)National Natural Science Foundation of China(Grant Nos.62204219,62204140)+1 种基金Major Program of Natural Science Foundation of Zhejiang Province(Grant No.LDT23F0401)Thanks to Professor Zhang Yishu from Zhejiang University,Professor Gao Xu from Soochow University,and Professor Zhong Shuai from Guangdong Institute of Intelligence Science and Technology for their support。
文摘Embedded memory,which heavily relies on the manufacturing process,has been widely adopted in various industrial applications.As the field of embedded memory continues to evolve,innovative strategies are emerging to enhance performance.Among them,resistive random access memory(RRAM)has gained significant attention due to its numerousadvantages over traditional memory devices,including high speed(<1 ns),high density(4 F^(2)·n^(-1)),high scalability(~nm),and low power consumption(~pJ).This review focuses on the recent progress of embedded RRAM in industrial manufacturing and its potentialapplications.It provides a brief introduction to the concepts and advantages of RRAM,discusses the key factors that impact its industrial manufacturing,and presents the commercial progress driven by cutting-edge nanotechnology,which has been pursued by manysemiconductor giants.Additionally,it highlights the adoption of embedded RRAM in emerging applications within the realm of the Internet of Things and future intelligent computing,with a particular emphasis on its role in neuromorphic computing.Finally,the review discusses thecurrent challenges and provides insights into the prospects of embedded RRAM in the era of big data and artificial intelligence.
文摘With the development of satellite based remote sensors, embedded systems become moreand more popular in space camera electronics. Static Random Access Memory（SRAM） is one kind of themost widely used memories due to its merits of high efficiency and low power dissipation, but testing itsfunction still depends on writing testing modules with hardware description language, which results in lowdeveloping efficiency and low reliability. In this paper, an embedded testing method is proposed, which isbased on MicroBlaze and its speed increasing function design. Implementation of the test method is basedon reusable Intellectual Property（IP） technique and greatly improves data transfer speed. With this method,secondary development of SRAM test system can be made in application layer instead of fundamentallogical layer, which simplifies the system design. It is not only more efficient and more reliable, but alsoeasier to transplant, which greatly reduces test design cost. The validity and feasibility of the method havebeen proved by test results.
文摘This paper presents a new encryption embedded processor aimed at the application requirement of wireless sensor network （WSN）. The new encryption embedded processor not only offers Rivest Shamir Adlemen （RSA）, Advanced Encryption Standard （AES）, 3 Data Encryption Standard （3 DES） and Secure Hash Algorithm 1 （SHA - 1 ） security engines, but also involves a new memory encryption scheme. The new memory encryption scheme is implemented by a memory encryption cache （MEC）, which protects the confidentiality of the memory by AES encryption. The experi- ments show that the new secure design only causes 1.9% additional delay on the critical path and cuts 25.7% power consumption when the processor writes data back. The new processor balances the performance overhead, the power consumption and the security and fully meets the wireless sensor environment requirement. After physical design, the new encryption embedded processor has been successfully tape-out.
文摘Operational analytics is all about answering business questions while doing business and supporting business users across the organization, from shop floor users to management and executives. Therefore, business transactions and analytics must co-exist together in a single platform to empower business users to drive insights, make decisions, and complete business processes in a single application and using a single source of facts without toggling between multiple applications. Traditionally transactional systems and analytics were maintained separately to improve throughput of the transactional system and that certainly introduced latency in decision making. However, with innovation in the SAP HANA platform, SAP S/4HANA embedded analytics enables business users, business analysts, and management to perform real-time analytics on live transactional data. This paper reviews technical architecture and key components of SAP S/4HANA embedded analytics. This paper reviews technical architecture and key components of SAP S/4HANA embedded analytics.
文摘随着信息技术的发展,设计越来越复杂,嵌入式存储器在SoC芯片面积中所占的比例越来越大,由于本身单元密度很高,嵌入式存储器容易造成硅片缺陷,降低了芯片的成品率.针对投影仪梯形校正项目嵌入的存储器模块存在的故障等问题,讨论了基于M arch C+算法的B IST的设计与实现,并对B IST进行改进,完成对存储器故障的检测和定位,整个测试故障覆盖率接近100%、测试时间为35.546 m s.
基金supported by the National Natural Science Foundation of China under Grant No.62104025in part by the State Key Laboratory of Computer Architecture under Grant Nos.CARCHB202117 and CLQ202305.
文摘Emerging non-volatile memories(NVMs),including resistive random-access memory(RRAM)and magnetic random-access memory(MRAM),have been promising solutions for intelligent embedded systems.With the non-volatility and low leakage power consumption,the industry-based embedded NVMs can be used to develop energy-efficient artificial intelligent processors.However,industry-based NVMs typically have low endurance with only 10^(4) to 10^(6) maximum write times,shortening the lifetime of embedded systems.In addition,non-uniform write distribution to physical addresses onto NVMs may further reduce system lifetime.Furthermore,several intentional attacks,such as malicious writing,may impair embedded NVMs.In this paper,we present a novel wear-leveling technique based on row-column data movement,SENTRY,to extend system lifetime.We explore industry-based embedded NVM chips and analyze practical data distributions of several tasks.We design a coordinate system based moving method with negligible storage overhead for more efficient data movement.The experiment shows that SENTRY achieves a 96.07%life utilization rate with 1.47%data movement overhead.In addition,SENTRY increases the endurance margin of memory by 6048x compared with an unprotected baseline(without SENTRY)under malicious address attacks.
基金supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)+4 种基金in part by the CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012, Grant 62074161, Grant 62004213, Grant U20A20208, and Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by the IMECAS-HKUST-Joint Laboratory of Microelectronics
文摘In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
基金Project supported by the National High Technology Research and Development Program of China(No.2008AA031403)the National Basic Research Program of China(No.2010CB934204)the National Science Fund for Distinguished Young Scholars of China (No.60825403)
文摘This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.
