The turn-on speed of electrostatic discharge （ESD） protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device （DTSCR） can be used effe...The turn-on speed of electrostatic discharge （ESD） protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device （DTSCR） can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors. Using the variation lateral base doping （VLBD） structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure （VLBD_DTSCR） is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n-p-n and p--n-p bipolar transistors to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current.展开更多
Capacitance extraction is one of the key issues in integrated circuits and also a typical electrostatic prob- lem. The dual discrete geometric method （DGM） is investigated to provide relative solutions in two-dimens...Capacitance extraction is one of the key issues in integrated circuits and also a typical electrostatic prob- lem. The dual discrete geometric method （DGM） is investigated to provide relative solutions in two-dimensional unstructured mesh space. The energy complementary characteristic and quick field energy computation thereof based on it are emphasized. Contrastive analysis between the dual finite element methods and the dual DGMs are presented both from theoretical derivation and through case studies. The DGM, taking the scalar potential as unknown on dual interlocked meshes, with simple form and good accuracy, is expected to be one of the mainstreaming methods in associated areas.展开更多
基金Project supported by the Chinese Universities Scientific Fund(No.ZYGX2011J030)
文摘The turn-on speed of electrostatic discharge （ESD） protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device （DTSCR） can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors. Using the variation lateral base doping （VLBD） structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure （VLBD_DTSCR） is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n-p-n and p--n-p bipolar transistors to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current.
基金supported by the National Science Foundation of China(No.51207150)the Director Foundation of Institute of Microelectronics of Chinese Academy of Sciences(Nos.Y2SF017001,Y3SZ0701)
文摘Capacitance extraction is one of the key issues in integrated circuits and also a typical electrostatic prob- lem. The dual discrete geometric method （DGM） is investigated to provide relative solutions in two-dimensional unstructured mesh space. The energy complementary characteristic and quick field energy computation thereof based on it are emphasized. Contrastive analysis between the dual finite element methods and the dual DGMs are presented both from theoretical derivation and through case studies. The DGM, taking the scalar potential as unknown on dual interlocked meshes, with simple form and good accuracy, is expected to be one of the mainstreaming methods in associated areas.
