Secondary electron yield(SEY)of air-exposed metals tends to be increased because of air-formed oxide,hydrocarbon,and other contaminants.This enhances the possibility of secondary electron multipacting in high-power mi...Secondary electron yield(SEY)of air-exposed metals tends to be increased because of air-formed oxide,hydrocarbon,and other contaminants.This enhances the possibility of secondary electron multipacting in high-power microwave systems,resulting in undesirable occurrence of discharge damage.Al_(2)O_(3) coatings have been utilized as passive and protective layers on device packages to provide good environmental stability.We employed atomic layer deposition(ALD)to produce a series of uniform Al_(2)O_(3) coatings with appropriate thickness on Ag-plated aluminum alloy.The secondary electron emission characteristics and their variations during air exposure were observed.The escape depth of secondary electron needs to exceed the coating thickness to some extent in order to demonstrate SEY of metallic substrates.Based on experimental and calculated results,the maximum SEY of Ag-plated aluminum alloy had been maintained at 2.45 over 90 days of exposure without obvious degradation by applying 1 nm Al_(2)O_(3) coatings.In comparison,the peak SEY of untreated Ag-plated aluminum alloy grew from an initial 2.33 to 2.53,exceeding that of the 1 nm Al_(2)O_(3) sample.The ultra-thin ALDAl_(2)O_(3) coating substantially enhanced the SEY stability of metal materials,with good implications for the environmental dependability of spacecraft microwave components.展开更多
Reducing the secondary electron yield(SEY)of Ag-plated aluminum alloy is important for high-power microwave components.In this work,Cu doped carbon films are prepared and the secondary electron emission characteristic...Reducing the secondary electron yield(SEY)of Ag-plated aluminum alloy is important for high-power microwave components.In this work,Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically.The secondary electron coefficientδ_(max) of carbon films increases with the Cu contents increasing at first,and then decreases to 1.53 at a high doping ratio of 0.645.From the viewpoint of surface structure,the higher the content of Cu is,the rougher the surface is,since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network.However,from viewpoint of the electronic structure,the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases,due to the decreasing probability of collision with free electrons.Thus,the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.展开更多
Calculations of secondary electron yield（SEY） by physical formula can hardly accord with experimental results precisely. Simplified descriptions of internal electron movements in the calculation and complex surface ...Calculations of secondary electron yield（SEY） by physical formula can hardly accord with experimental results precisely. Simplified descriptions of internal electron movements in the calculation and complex surface contamination states of real sample result in notable difference between simulations and experiments. In this paper, in order to calculate SEY of metal under complicated surface state accurately, we propose a synthetic semi-empirical physical model. The processes of excitation of internal secondary electron（SE） and movement toward surface can be simulated using this model.This model also takes into account the influences of incident angle and backscattering electrons as well as the surface gas contamination. In order to describe internal electronic states accurately, the penetration coefficient of incident electron is described as a function of material atom number. Directions of internal electrons are set to be uniform in each angle. The distribution of internal SEs is proposed by considering both the integration convergence and the cascade scattering process.In addition, according to the experiment data, relationship among desorption gas quantities, sample ultimate temperature and SEY is established. Comparing with experiment results, this synthetic semi-empirical physical model can describe the SEY of metal better than former formulas, especially in the aspect of surface contaminated states. The proposed synthetic semi-empirical physical model and presented results in this paper can be helpful for further studying SE emission, and offer an available method for estimating and taking advantage of SE emission accurately.展开更多
The phenomenon of secondary electron emission is of considerable interest in areas such as particle accelerators and on-board radio frequency(RF) components.Total secondary electron yield(TSEY) is a parameter that is ...The phenomenon of secondary electron emission is of considerable interest in areas such as particle accelerators and on-board radio frequency(RF) components.Total secondary electron yield(TSEY) is a parameter that is frequently used to describe the secondary electron emission capability of a material.It has been widely recognized that the TSEY vs.primary electron energy curve has a single-hump shape.However, the TSEY–energy curve with a double-hump shape was also observed experimentally-this anomaly still lacks explanation.In this work, we explain this anomaly with the help of a millimetre-scale(mm-scale) silver pillar array fabricated by three-dimensional(3 D) printing technology.The TSEY–energy curve of this pillar array as well as its flat counterpart is obtained using sample current method.The measurement results show that for the considered primary electron energy(40–1500 eV), the pillar array can obviously suppress TSEY,and its TSEY–energy curve has an obvious double-hump shape.Through Monte Carlo simulations and electron beam spot size measurements, we successfully attribute the double-hump effect to the dependence of electron beam spot size on the primary electron energy.The observations of this work may be of help in determining the TSEY of roughened surface with characteristic surface structures comparable to electron beam spot size.It also experimentally confirms the TSEY suppression effect of pillar arrays.展开更多
The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield(δ_m) at W_(pOm)≤ 800 eV and the secondary electron yield from in...The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield(δ_m) at W_(pOm)≤ 800 eV and the secondary electron yield from insulators and semiconductors δ at the primary incident energy of 2 keV≤ W_(pO) < 10 keV(δ_(2-10)) and10 keV ≤ W_(pO)≤100 keV(δ_(10-100)) were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced formulae can be used to calculate δ_(2-100)at W_(pOm)≤ 800 eV.展开更多
A secondary electron yield test device for vacuum material study is set up,and its detailed design described in this paper.The test results for a few common vacuum materials with and without TiN film coating are prese...A secondary electron yield test device for vacuum material study is set up,and its detailed design described in this paper.The test results for a few common vacuum materials with and without TiN film coating are presented,and the influential factors on secondary electron yield are analyzed.All the work will be helpful to the surface pretreatment of vacuum materials.展开更多
Purpose The limitation of the traditional bias neutralization method is proved,and a new neutralization method is proposed to measure the secondary electron yield of insulating materials.Method While measuring the sec...Purpose The limitation of the traditional bias neutralization method is proved,and a new neutralization method is proposed to measure the secondary electron yield of insulating materials.Method While measuring the secondary electron yield of an insulating sample using the bias neutralization method,the region of an insulating sample irradiated by an electron beam may not be neutralized,because electrons enforced by the bias are not returned to the proper location.The above-mentioned phenomenon is verified by a simulation.To achieve proper neutralization,we propose a method of moving the electron beam to irradiate the metal sample stage without applying a bias voltage,which generates many low-energy electrons around the insulating sample.Those electrons are automatically attracted to the positively charged region of the insulating sample surface and rejected if enough electrons accumulated on the surface.Result and conclusion The limitation of neutralization of bias voltage was verified by simulation,and the new neutralization method was proved to be effective through experiments.展开更多
The secondary electron emission yields of materials depend on the geometries of their surface structures.In this paper,a method of depositing vertical graphene nanosheet(VGN)on the surface of the material is proposed,...The secondary electron emission yields of materials depend on the geometries of their surface structures.In this paper,a method of depositing vertical graphene nanosheet(VGN)on the surface of the material is proposed,and the secondary electron emission(SEE)characteristics for the VGN structure are studied.The COMSOL simulation and the scanning electron microscope(SEM)image analysis are carried out to study the secondary electron yield(SEY).The effect of aspect ratio and packing density of VGN on SEY under normal incident condition are studied.The results show that the VGN structure has a good effect on suppressing SEE.展开更多
The total electron yield （TEY） mode has been developed successfully for XANES measurements at Beamline 4BTA of BSRF （Beijing Synchrotron Radiation Facility）. Its performance was studied by measuring sulphur K-edge...The total electron yield （TEY） mode has been developed successfully for XANES measurements at Beamline 4BTA of BSRF （Beijing Synchrotron Radiation Facility）. Its performance was studied by measuring sulphur K-edge XANES of three CdS samples （mixed with graphite powder as an electric conductor） with different concentration： 75%, 50~ and 25%. The data are collected in TEY mode and fluorescence yield （FY） mode respectively for comparison. The results demonstrate that the TEY spectra of three samples agree well with each other after the background is subtracted and normalized. The measured XANES spectra by TEY mode without bias and with 100V bias are almost identical to one another, but the signal-to-noise ratio of spectra measured without bias is better than that with 100V bias. The consistency of the self-absorption corrected FY spectra and TEY spectra are within 10% for the three samples.展开更多
This paper reports that the charging properties of lead silica, Suprasil silica and Infrasil silica are investigated by measuring the secondary electron emission （SEE） yield. At a primary electron beam energy of 25 ...This paper reports that the charging properties of lead silica, Suprasil silica and Infrasil silica are investigated by measuring the secondary electron emission （SEE） yield. At a primary electron beam energy of 25 keV, the intrinsic SEE yields measured at very low injection dose are 0.54, 0.29 and 0.35, respectively for lead silica, Suprasil and Infrasil silica glass. During the first e-beam irradiation at a high injection current density, the SEE yields of lead silica and Suprasil increase continuously and slowly from their initial values to a steady state. At the steady state, the SEE yields of lead silica and Suprasil are 0.94 and 0.93, respectively. In Infrasil, several charging and discharging processes are observed during the experiment. This shows that Infrasil does not reach its steady state. Two hours later, all samples are irradiated again in the same place as the first irradiation at a low current density and low dose. The SEE yields of lead silica, Suprasil and Infrasil are 0.69, 0.76 and 0.55, respectively. Twenty hours later, the values are 0.62, 0.64 and 0.33, respectively, for lead silica, Suprasil and Infrasil. These results show that Infrasil has poor charging stability. Comparatively, the charging stability of lead silica is better, and Suprasil has the best characteristics.展开更多
The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the m...The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).展开更多
Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surfa...Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1 × 10^(-7), the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1 × 10^(-7),the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then,the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D,the higher the multipactor threshold.展开更多
In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of...In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.展开更多
钼具有高熔点、低的热膨胀系数和极佳的稳定性,在等离子体推进和电真空器件领域具有广阔的应用前景,其二次电子发射特性也逐渐引起了研究者们的关注。本研究首先对钼的二次电子发射系数(secondary electron yield, SEY)和二次电子能谱(s...钼具有高熔点、低的热膨胀系数和极佳的稳定性,在等离子体推进和电真空器件领域具有广阔的应用前景,其二次电子发射特性也逐渐引起了研究者们的关注。本研究首先对钼的二次电子发射系数(secondary electron yield, SEY)和二次电子能谱(secondaryelectronspectrum, SES)展开实验研究,其次利用相关唯象模型对测试数据进行分析;最后建立钼SEY的蒙特卡罗模型,用于分析功函数对SEY的影响规律。结果表明:钼SEY的最大值为1.77,相比镀银铝合金明显降低。当入射电子能量改变时,SES中真二次电子峰的最可几能量基本不变,而弹性背散射电子峰的位置和强度均随之改变。在各类二次电子中,真二次电子受功函数的影响最大。展开更多
基金Project supported by the Sustainedly Supported Foundation by National Key Laboratory of Science and Technology on Space Microwave(Grant No.HTKJ2023KL504001)the National Natural Science Foundation of China(Grant No.62101434).
文摘Secondary electron yield(SEY)of air-exposed metals tends to be increased because of air-formed oxide,hydrocarbon,and other contaminants.This enhances the possibility of secondary electron multipacting in high-power microwave systems,resulting in undesirable occurrence of discharge damage.Al_(2)O_(3) coatings have been utilized as passive and protective layers on device packages to provide good environmental stability.We employed atomic layer deposition(ALD)to produce a series of uniform Al_(2)O_(3) coatings with appropriate thickness on Ag-plated aluminum alloy.The secondary electron emission characteristics and their variations during air exposure were observed.The escape depth of secondary electron needs to exceed the coating thickness to some extent in order to demonstrate SEY of metallic substrates.Based on experimental and calculated results,the maximum SEY of Ag-plated aluminum alloy had been maintained at 2.45 over 90 days of exposure without obvious degradation by applying 1 nm Al_(2)O_(3) coatings.In comparison,the peak SEY of untreated Ag-plated aluminum alloy grew from an initial 2.33 to 2.53,exceeding that of the 1 nm Al_(2)O_(3) sample.The ultra-thin ALDAl_(2)O_(3) coating substantially enhanced the SEY stability of metal materials,with good implications for the environmental dependability of spacecraft microwave components.
基金supported by the National Key Laboratory Foundation(Grant Nos.2018SSFNKLSMT04,614241101010117 and 6142411191110)the National 111 Project of China(Grant No.B14040)。
文摘Reducing the secondary electron yield(SEY)of Ag-plated aluminum alloy is important for high-power microwave components.In this work,Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically.The secondary electron coefficientδ_(max) of carbon films increases with the Cu contents increasing at first,and then decreases to 1.53 at a high doping ratio of 0.645.From the viewpoint of surface structure,the higher the content of Cu is,the rougher the surface is,since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network.However,from viewpoint of the electronic structure,the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases,due to the decreasing probability of collision with free electrons.Thus,the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1537211 and 11675278)the China Postdoctoral Science Foundation(Grant No.2016M602944XB)
文摘Calculations of secondary electron yield（SEY） by physical formula can hardly accord with experimental results precisely. Simplified descriptions of internal electron movements in the calculation and complex surface contamination states of real sample result in notable difference between simulations and experiments. In this paper, in order to calculate SEY of metal under complicated surface state accurately, we propose a synthetic semi-empirical physical model. The processes of excitation of internal secondary electron（SE） and movement toward surface can be simulated using this model.This model also takes into account the influences of incident angle and backscattering electrons as well as the surface gas contamination. In order to describe internal electronic states accurately, the penetration coefficient of incident electron is described as a function of material atom number. Directions of internal electrons are set to be uniform in each angle. The distribution of internal SEs is proposed by considering both the integration convergence and the cascade scattering process.In addition, according to the experiment data, relationship among desorption gas quantities, sample ultimate temperature and SEY is established. Comparing with experiment results, this synthetic semi-empirical physical model can describe the SEY of metal better than former formulas, especially in the aspect of surface contaminated states. The proposed synthetic semi-empirical physical model and presented results in this paper can be helpful for further studying SE emission, and offer an available method for estimating and taking advantage of SE emission accurately.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1832190,61501364,U1537211,and 11705142)
文摘The phenomenon of secondary electron emission is of considerable interest in areas such as particle accelerators and on-board radio frequency(RF) components.Total secondary electron yield(TSEY) is a parameter that is frequently used to describe the secondary electron emission capability of a material.It has been widely recognized that the TSEY vs.primary electron energy curve has a single-hump shape.However, the TSEY–energy curve with a double-hump shape was also observed experimentally-this anomaly still lacks explanation.In this work, we explain this anomaly with the help of a millimetre-scale(mm-scale) silver pillar array fabricated by three-dimensional(3 D) printing technology.The TSEY–energy curve of this pillar array as well as its flat counterpart is obtained using sample current method.The measurement results show that for the considered primary electron energy(40–1500 eV), the pillar array can obviously suppress TSEY,and its TSEY–energy curve has an obvious double-hump shape.Through Monte Carlo simulations and electron beam spot size measurements, we successfully attribute the double-hump effect to the dependence of electron beam spot size on the primary electron energy.The observations of this work may be of help in determining the TSEY of roughened surface with characteristic surface structures comparable to electron beam spot size.It also experimentally confirms the TSEY suppression effect of pillar arrays.
基金supported by the National Natural Science Foundation of China(No.11473049)
文摘The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield(δ_m) at W_(pOm)≤ 800 eV and the secondary electron yield from insulators and semiconductors δ at the primary incident energy of 2 keV≤ W_(pO) < 10 keV(δ_(2-10)) and10 keV ≤ W_(pO)≤100 keV(δ_(10-100)) were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced formulae can be used to calculate δ_(2-100)at W_(pOm)≤ 800 eV.
文摘A secondary electron yield test device for vacuum material study is set up,and its detailed design described in this paper.The test results for a few common vacuum materials with and without TiN film coating are presented,and the influential factors on secondary electron yield are analyzed.All the work will be helpful to the surface pretreatment of vacuum materials.
基金supported by the National Natural Science Foundation of China(Grant Nos.11535014,11675278 and 11975017)the State Key Laboratory of Par-ticle Detection and Electronics(SKL.PDE-ZZ-201920)the National Key Research and Development Project of China(2016YFFO100402).
文摘Purpose The limitation of the traditional bias neutralization method is proved,and a new neutralization method is proposed to measure the secondary electron yield of insulating materials.Method While measuring the secondary electron yield of an insulating sample using the bias neutralization method,the region of an insulating sample irradiated by an electron beam may not be neutralized,because electrons enforced by the bias are not returned to the proper location.The above-mentioned phenomenon is verified by a simulation.To achieve proper neutralization,we propose a method of moving the electron beam to irradiate the metal sample stage without applying a bias voltage,which generates many low-energy electrons around the insulating sample.Those electrons are automatically attracted to the positively charged region of the insulating sample surface and rejected if enough electrons accumulated on the surface.Result and conclusion The limitation of neutralization of bias voltage was verified by simulation,and the new neutralization method was proved to be effective through experiments.
基金supported by the National Natural Science Foundation of China(Grant No.11975163)。
文摘The secondary electron emission yields of materials depend on the geometries of their surface structures.In this paper,a method of depositing vertical graphene nanosheet(VGN)on the surface of the material is proposed,and the secondary electron emission(SEE)characteristics for the VGN structure are studied.The COMSOL simulation and the scanning electron microscope(SEM)image analysis are carried out to study the secondary electron yield(SEY).The effect of aspect ratio and packing density of VGN on SEY under normal incident condition are studied.The results show that the VGN structure has a good effect on suppressing SEE.
基金Supported by National Natural Science Foundation of China (10775150)
文摘The total electron yield （TEY） mode has been developed successfully for XANES measurements at Beamline 4BTA of BSRF （Beijing Synchrotron Radiation Facility）. Its performance was studied by measuring sulphur K-edge XANES of three CdS samples （mixed with graphite powder as an electric conductor） with different concentration： 75%, 50~ and 25%. The data are collected in TEY mode and fluorescence yield （FY） mode respectively for comparison. The results demonstrate that the TEY spectra of three samples agree well with each other after the background is subtracted and normalized. The measured XANES spectra by TEY mode without bias and with 100V bias are almost identical to one another, but the signal-to-noise ratio of spectra measured without bias is better than that with 100V bias. The consistency of the self-absorption corrected FY spectra and TEY spectra are within 10% for the three samples.
基金supported by the European Commission in the framework of the GLAMOROUS contract (ref. IST2000-28366)
文摘This paper reports that the charging properties of lead silica, Suprasil silica and Infrasil silica are investigated by measuring the secondary electron emission （SEE） yield. At a primary electron beam energy of 25 keV, the intrinsic SEE yields measured at very low injection dose are 0.54, 0.29 and 0.35, respectively for lead silica, Suprasil and Infrasil silica glass. During the first e-beam irradiation at a high injection current density, the SEE yields of lead silica and Suprasil increase continuously and slowly from their initial values to a steady state. At the steady state, the SEE yields of lead silica and Suprasil are 0.94 and 0.93, respectively. In Infrasil, several charging and discharging processes are observed during the experiment. This shows that Infrasil does not reach its steady state. Two hours later, all samples are irradiated again in the same place as the first irradiation at a low current density and low dose. The SEE yields of lead silica, Suprasil and Infrasil are 0.69, 0.76 and 0.55, respectively. Twenty hours later, the values are 0.62, 0.64 and 0.33, respectively, for lead silica, Suprasil and Infrasil. These results show that Infrasil has poor charging stability. Comparatively, the charging stability of lead silica is better, and Suprasil has the best characteristics.
基金Project supported by the National Natural Science Foundation of China(Grant No.11873013)。
文摘The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1537211 and 61901361)。
文摘Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1 × 10^(-7), the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1 × 10^(-7),the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then,the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D,the higher the multipactor threshold.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60801036 and 61067001)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CX09B 096Z)the Research Foundation of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.
文摘钼具有高熔点、低的热膨胀系数和极佳的稳定性,在等离子体推进和电真空器件领域具有广阔的应用前景,其二次电子发射特性也逐渐引起了研究者们的关注。本研究首先对钼的二次电子发射系数(secondary electron yield, SEY)和二次电子能谱(secondaryelectronspectrum, SES)展开实验研究,其次利用相关唯象模型对测试数据进行分析;最后建立钼SEY的蒙特卡罗模型,用于分析功函数对SEY的影响规律。结果表明:钼SEY的最大值为1.77,相比镀银铝合金明显降低。当入射电子能量改变时,SES中真二次电子峰的最可几能量基本不变,而弹性背散射电子峰的位置和强度均随之改变。在各类二次电子中,真二次电子受功函数的影响最大。
