The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.展开更多
Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistor...Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistors(EGOTs)offer significant advantages as neuromorphic devices due to their ultra-low operation voltages,minimal hardwired connectivity,and similar operation environment as electrophysiology.Meanwhile,ionic–electronic coupling and the relatively low elastic moduli of organic channel materials make EGOTs suitable for interfacing with biology.This review presents an overview of the device architectures based on organic electrochemical transistors and organic field-effect transistors.Furthermore,we review the requirements of low energy consumption and tunable synaptic plasticity of EGOTs in emulating biological synapses and how they are affected by the organic materials,electrolyte,architecture,and operation mechanism.In addition,we summarize the basic operation principle of biological sensory systems and the recent progress of EGOTs as a building block in artificial systems.Finally,the current challenges and future development of the organic neuromorphic devices are discussed.展开更多
Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the hu...Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and repeated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate“read”and“write”operations.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions.展开更多
Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionali...Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionalindium zinc oxide(InZnO)nanowires,owing to their excellentcharge transport and trapping properties,demonstrate tremendous potentialin synaptic transistors.However,the carrier concentration in InZnOnanowires is susceptible to oxygen vacancies,which can severely influencethe performance of the synaptic transistors.Herein,we present a facile andreliable scheme to control the synaptic transistor properties via an Arplasma-assisted oxygen vacancy defect-tunable strategy.This adjustingstrategy is based on the thermal diffusion of oxygen atoms bombarded byAr ions,which increases the oxygen vacancy concentration on the surfaceof InZnO nanowires and further regulates the carrier concentration in thedevice channel.Compared with the untreated devices,the responsivity ofthe Ar plasma-treated devices is increased by 400%,and the memory effectis also enhanced by 230%.This oxygen vacancy regulation strategyprovides a new avenue for fabricating high-performance neuromorphiccomputing systems.展开更多
Organic electrolyte-gated transistors(OEGTs) have the benefits of low power consumption and large current modulation.Nevertheless,the electrical performance of n-type OEGTs lags far behind that of p-type OEGTs.In this...Organic electrolyte-gated transistors(OEGTs) have the benefits of low power consumption and large current modulation.Nevertheless,the electrical performance of n-type OEGTs lags far behind that of p-type OEGTs.In this study,we design a series of polymers,P(NDITEG-T) and P(NDIMTEG-T),comprising a naphthalene diimide backbone for n-type charge transport and oligo(ethylene glycol)(OEG) side chains for high ionic conductivity and eco-friendly solution processing.The incorporation of the OEG chain facilitates the electrochemical doping of the semiconductor by ions to realize high-performance,n-type OEGTs.Notably,in OEGTs,P(NDITEG-T) achieves a high electron mobility of 1.0 × 10^(-1) cm^(2) V^(-1) s^(-1),which represents the highest value reported for solution-processed,n-type OEGTs.It is noted that the fabrication of the OEGTs is achieved by solution processing with eco-friendly ethanol/water mixtures in virtue of the hydrophilic OEG chains.This work demonstrates the molecular design of the P(NDITEG-T) polymer and its significant ability to produce aqueous-processable,high-performance,and n-type OEGTs.展开更多
Reservoir computing(RC)is an energy-efficient computational framework with low training cost and high efficiency in processing spatiotemporal information.The state-of-the-art fully memristor-based hardware RC system s...Reservoir computing(RC)is an energy-efficient computational framework with low training cost and high efficiency in processing spatiotemporal information.The state-of-the-art fully memristor-based hardware RC system suffers from bottlenecks in the computation efficiencies and accuracy due to the limited temporal tunability in the volatile memristor for the reservoir layer and the nonlinearity in the nonvolatile memristor for the readout layer.Additionally,integrating different types of memristors brings fabrication and integration complexities.To overcome the challenges,a multifunctional multi-terminal electrolyte-gated transistor(MTEGT)that combines both electrostatic and electrochemical doping mechanisms is proposed in this work,integrating both widely tunable volatile dynamics with high temporal tunable range of 10^(2) and nonvolatile memory properties with high long-term potentiation/long-term depression(LTP/LTD)linearity into a single device.An ion-controlled physical RC system fully implemented with only one type of MTEGT is constructed for image recognition using the volatile dynamics for the reservoir and nonvolatility for the readout layer.Moreover,an ultralow normalized mean square error of 0.002 is achieved in a time series prediction task.It is believed that the MTEGT would underlie next-generation neuromorphic computing systems with low hardware costs and high computational performance.展开更多
基金supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069)the National Natural Science Foundation of China(52172169)the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).
文摘The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.
基金financial support by the self-supporting project of Pazhou Lab(No.PZL2023ZZ0011)by National Key R&D Program of China(No.2019YFA0904801).
文摘Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistors(EGOTs)offer significant advantages as neuromorphic devices due to their ultra-low operation voltages,minimal hardwired connectivity,and similar operation environment as electrophysiology.Meanwhile,ionic–electronic coupling and the relatively low elastic moduli of organic channel materials make EGOTs suitable for interfacing with biology.This review presents an overview of the device architectures based on organic electrochemical transistors and organic field-effect transistors.Furthermore,we review the requirements of low energy consumption and tunable synaptic plasticity of EGOTs in emulating biological synapses and how they are affected by the organic materials,electrolyte,architecture,and operation mechanism.In addition,we summarize the basic operation principle of biological sensory systems and the recent progress of EGOTs as a building block in artificial systems.Finally,the current challenges and future development of the organic neuromorphic devices are discussed.
基金the National Key R&D Program of China(No.2017YFA0303604 and 2019YFA0308500)the Youth Innovation Promotion Association of CAS(No.2018008)+1 种基金the National Natural Science Foundation of China(Nos.12074416,11674385,11404380,11721404,and 11874412)the Key Research Program of Frontier Sciences CAS(No.QYZDJSSW-SLH020).
文摘Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and repeated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate“read”and“write”operations.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions.
基金supported by Shandong Postdoctoral Science Foundation,China(No.SDCX-ZG-202400331)funded by Qingdao Postdoctoral Project,China(No.QDBSH20240102147)the Natural Science Basic Research Program of Shaanxi(Program No.2023-JC-YB-400).
文摘Synaptic transistors are regarded as promising components for advancedartificial neural networks and hardware-based learning systems becausethey can emulate the fundamental biological synapse functions.Onedimensionalindium zinc oxide(InZnO)nanowires,owing to their excellentcharge transport and trapping properties,demonstrate tremendous potentialin synaptic transistors.However,the carrier concentration in InZnOnanowires is susceptible to oxygen vacancies,which can severely influencethe performance of the synaptic transistors.Herein,we present a facile andreliable scheme to control the synaptic transistor properties via an Arplasma-assisted oxygen vacancy defect-tunable strategy.This adjustingstrategy is based on the thermal diffusion of oxygen atoms bombarded byAr ions,which increases the oxygen vacancy concentration on the surfaceof InZnO nanowires and further regulates the carrier concentration in thedevice channel.Compared with the untreated devices,the responsivity ofthe Ar plasma-treated devices is increased by 400%,and the memory effectis also enhanced by 230%.This oxygen vacancy regulation strategyprovides a new avenue for fabricating high-performance neuromorphiccomputing systems.
基金supported by the Materials & Components Technology Development Program (20006537, Development of High Performance Insulation Materials for Flexible OLED Display TFT)the Ministry of Trade, Industry & Energy (MOTIE, Republic of Korea)+1 种基金the grant from the Ministry of SMEs and Startups of the Korean Government (1425144083)the support by National Research Foundation of Korea (NRF) Grant of the Korean Government (2017M3A7B8065584)。
文摘Organic electrolyte-gated transistors(OEGTs) have the benefits of low power consumption and large current modulation.Nevertheless,the electrical performance of n-type OEGTs lags far behind that of p-type OEGTs.In this study,we design a series of polymers,P(NDITEG-T) and P(NDIMTEG-T),comprising a naphthalene diimide backbone for n-type charge transport and oligo(ethylene glycol)(OEG) side chains for high ionic conductivity and eco-friendly solution processing.The incorporation of the OEG chain facilitates the electrochemical doping of the semiconductor by ions to realize high-performance,n-type OEGTs.Notably,in OEGTs,P(NDITEG-T) achieves a high electron mobility of 1.0 × 10^(-1) cm^(2) V^(-1) s^(-1),which represents the highest value reported for solution-processed,n-type OEGTs.It is noted that the fabrication of the OEGTs is achieved by solution processing with eco-friendly ethanol/water mixtures in virtue of the hydrophilic OEG chains.This work demonstrates the molecular design of the P(NDITEG-T) polymer and its significant ability to produce aqueous-processable,high-performance,and n-type OEGTs.
基金supported by Guangdong Basic and Applied Basic Research Foundation(No.2022A1515011272)the National Natural Science Foundation of China(Nos.61904208,62104091,52273246)+2 种基金Guangdong Natural Science Foundation(No.2022A1515011064)Young Innovative Talent Project Research Program(No.2021KQNCX077)Shenzhen Science and Technology Program(Nos.JCYJ20190807155411277,JCYJ20220530115204009).
文摘Reservoir computing(RC)is an energy-efficient computational framework with low training cost and high efficiency in processing spatiotemporal information.The state-of-the-art fully memristor-based hardware RC system suffers from bottlenecks in the computation efficiencies and accuracy due to the limited temporal tunability in the volatile memristor for the reservoir layer and the nonlinearity in the nonvolatile memristor for the readout layer.Additionally,integrating different types of memristors brings fabrication and integration complexities.To overcome the challenges,a multifunctional multi-terminal electrolyte-gated transistor(MTEGT)that combines both electrostatic and electrochemical doping mechanisms is proposed in this work,integrating both widely tunable volatile dynamics with high temporal tunable range of 10^(2) and nonvolatile memory properties with high long-term potentiation/long-term depression(LTP/LTD)linearity into a single device.An ion-controlled physical RC system fully implemented with only one type of MTEGT is constructed for image recognition using the volatile dynamics for the reservoir and nonvolatility for the readout layer.Moreover,an ultralow normalized mean square error of 0.002 is achieved in a time series prediction task.It is believed that the MTEGT would underlie next-generation neuromorphic computing systems with low hardware costs and high computational performance.
