Topological magnets have shown great potential for transverse thermoelectric(TE)conversion with structural advantages,utilizing the anomalous Nernst effect.To facilitate such applications,the development of exceptiona...Topological magnets have shown great potential for transverse thermoelectric(TE)conversion with structural advantages,utilizing the anomalous Nernst effect.To facilitate such applications,the development of exceptional topological magnet-based Nernst devices is a crucial step that requires both high-performance topological magnets and the design of low-resistance interfaces in the devices.Here,we report that the anomalous Nernst effect in topological magnets can be ubiquitously enhanced by synergistically tuning the entropy-density-weighted Berry curvature and the Fermi surface,as evidenced by a giant anomalous Nernst power factor of 47.8μW m^(-1) K^(-2) at room temperature in electron-doped Co2MnGa.In addition,we achieved an ultralow interfacial resistivity in the Nernst device by designing reactive wetting interfacial layers,enabling an ultrahigh power output of 69.7μW at a temperature difference of 16.1 K,the highest value yet reported to date.We have also experimentally corroborated the structural advantages of transverse TE technology by developing Nernst devices with different length-to-thickness ratios.Our work demonstrates a paradigm for designing exceptional topological magnetbased Nernst generators for transverse TE conversion.展开更多
基金supported by the National Key Research and Development Program of China(no.2024YFA1409202)the National Natural Science Foundation of China(nos.52471239,U23A20553,92163203,52271016,and 52188101)+1 种基金the Fundamental Research Funds for the Central Universities(226-2024-00075)the Natural Science Foundation of Liaoning Province(no.XLYC2203080).
文摘Topological magnets have shown great potential for transverse thermoelectric(TE)conversion with structural advantages,utilizing the anomalous Nernst effect.To facilitate such applications,the development of exceptional topological magnet-based Nernst devices is a crucial step that requires both high-performance topological magnets and the design of low-resistance interfaces in the devices.Here,we report that the anomalous Nernst effect in topological magnets can be ubiquitously enhanced by synergistically tuning the entropy-density-weighted Berry curvature and the Fermi surface,as evidenced by a giant anomalous Nernst power factor of 47.8μW m^(-1) K^(-2) at room temperature in electron-doped Co2MnGa.In addition,we achieved an ultralow interfacial resistivity in the Nernst device by designing reactive wetting interfacial layers,enabling an ultrahigh power output of 69.7μW at a temperature difference of 16.1 K,the highest value yet reported to date.We have also experimentally corroborated the structural advantages of transverse TE technology by developing Nernst devices with different length-to-thickness ratios.Our work demonstrates a paradigm for designing exceptional topological magnetbased Nernst generators for transverse TE conversion.
