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Magnetic Properties and Kondo Effect in Ce_(3)TiBi_(5) under High Pressure
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作者 L.C.Fu W.J.Cheng +11 位作者 L.C.Shi B.S.Min Y.Peng J.Zhang J.Song Z.Deng J.F.Zhao Y.Liu J.L.Zhu J.F.Zhang X.C.Wang C.Q.Jin 《Chinese Physics Letters》 2026年第1期184-197,共14页
The magnetic properties and Kondo effect in Ce3TiBi5 with a quasi-one-dimensional structure were investigated using in situ high-pressure resistivity measurements up to 48 GPa.At ambient pressure,Ce_(3)TiBi_(5) underg... The magnetic properties and Kondo effect in Ce3TiBi5 with a quasi-one-dimensional structure were investigated using in situ high-pressure resistivity measurements up to 48 GPa.At ambient pressure,Ce_(3)TiBi_(5) undergoes an antiferromagnetic(AFM)transition at T_(N)∼5 K.Under high pressures within 8.9 GPa,we find that Kondo scattering contributes differently to the high-temperature resistance,R(T),depending on the applied current direction,demonstrating a significantly anisotropic Kondo effect.The complete P–T phase diagram has been constructed,in which the pressure dependence of T_(N) exhibits a dome-like shape.The AFM order remains robust under pressure,even when the coherence temperature T^(*) far exceeds 300 K.We attribute the observed anisotropic Kondo effect and the robust AFM to the underlying anisotropy in electronic hybridization under high pressure. 展开更多
关键词 magnetic properties resistivity measurements high pressure kondo effect kondo effectthe kondo scattering Ce TbI
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Batch production of modulation-doped MoS_(2) field-effect transistors for integrated electronics 被引量:1
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作者 Yutang Hou Lei Yin +8 位作者 Xianzhuo Zhao Xiaolin Zhang Yu Wang Xinjie Hou Yao Wen Hao Wang Sheng Chang Ruiqing Cheng Jun He 《Science Bulletin》 2025年第17期2735-2738,共4页
Due to the increase in leakage current and the serious decrease of on/off ratio caused by short channel effect and medium tunneling effect,the continued scaling of silicon transistors has become an insurmountable obst... Due to the increase in leakage current and the serious decrease of on/off ratio caused by short channel effect and medium tunneling effect,the continued scaling of silicon transistors has become an insurmountable obstacle for the semiconductor manufacturing industry moving forward.Two-dimensional(2D)semiconductor materials hold promise for achieving high speed and low-power switching characteristics under limit node size[1-10]. 展开更多
关键词 field effect transistors medium tunneling effectthe modulation doped short channel effect MOS leakage current semiconductor manufacturing batch production
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Onsager relation for electrokinetics at surfactant-covered bubble film
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作者 Meng Yan Yueke Niu +1 位作者 Miao Sun Yanbo Xie 《Droplet》 2025年第3期35-41,共7页
We analytically describe the slip length of the surfactant-covered bubble film under the joint actions of pressure gradient and electric field.Considering the Marangoni effect,the slip length and consequent zeta poten... We analytically describe the slip length of the surfactant-covered bubble film under the joint actions of pressure gradient and electric field.Considering the Marangoni effect,the slip length and consequent zeta potential of the liquid‒vapor interface significantly reduced compared to the Marangoni-free interface at low surfactant concentrations,due to the surfactant accumulation at downstream of the bubble liquid film.In addition,we discovered that the friction coefficient of the liquid‒vapor interface becomes field dependent in a regime of strong coupling among volume flow,surfactant transport,and ionic current at the liquid‒vapor interface.We use the Onsager reciprocal relationship to describe the electrokinetic effects within a bubble film,including flow velocity,ionic current,and surfactant transport,which can describe theMarangoni effectswhile considering multi-physical effects. 展开更多
关键词 slip length marangoni effectthe surfactant covered bubble film zeta potential electrokinetics friction coefficient onsager relation liquid vapor interface
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MHD effects of oriented magnetic field on radiative Casson nanofluid flow over a stretchable surface
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作者 Bharati M.Shettar G.K.Ramesh +1 位作者 Pradeep N.Hiremath J.K.Madhukesh 《International Journal of Fluid Engineering》 2025年第3期35-46,共12页
In various areas such as geophysics,petroleum engineering,agriculture,metal casting,metal working,and cooling of atomic reactors,magnetohydrodynamic(MHD)forces on fluid flow over a stretched surface play a crucial rol... In various areas such as geophysics,petroleum engineering,agriculture,metal casting,metal working,and cooling of atomic reactors,magnetohydrodynamic(MHD)forces on fluid flow over a stretched surface play a crucial role.This study investigates heat transfer and MHD phenomena in the flow of a Casson fluid with ternary nanoparticles under the influence of an aligned magnetic field and the slip effect.The energy equation takes into account radiation,convection,and a uniform source/sink of heat.Additionally,the relationship between the aligned magnetic field and the slip velocity is investigated.Through appropriate transformations,the governing equations with their associated boundary conditions are transformed to a set of ordinary differential equations,which are solved numerically.Key quantities such as temperature,friction drag,Nusselt number,and fluid velocity are investigated.The results show that the magnetic field induces a resistive force that slows down the motion of the fluid.It is also found that increases in the radiation parameter and Biot number lead to significant increases in heat transfer.This study provides an enhanced understanding of thermal and fluid dynamics with relevance to complex industrial and other engineering scenarios. 展开更多
关键词 aligned magnetic field atomic reactorsmagnetohydrodynamic mhd forces ternary nanoparticles slip effectthe flow casson fluid MHD energy equation Casson fluid
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