A polyvinylidene-fluoride（PVDF）-based magnetoelectric torque（MET） device is designed with elastic layer sandwiched by PVDF layers, and low-frequency MET effect is carefully studied. It is found that elastic modulu...A polyvinylidene-fluoride（PVDF）-based magnetoelectric torque（MET） device is designed with elastic layer sandwiched by PVDF layers, and low-frequency MET effect is carefully studied. It is found that elastic modulus and thickness of the elastic layer have great influences on magnetoelectric（ME） voltage coefficient（α（ME）） and working range of frequency in PVDF-based MET device. The decrease of the modulus and thickness can help increase the α ME. However,it can also reduce the working range in the low frequency. By optimizing the parameters, the giant α（ME） of 320 V/cm·Oe（1 Oe = 79.5775 A·m^-1 at low frequency（1 Hz） can be obtained. The present results may help design PVDF-based MET low-frequency magnetic sensor with improved magnetic sensitivity in a relative large frequency range.展开更多
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. ...Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.展开更多
In this review,the recent developments in microelectronics,spintronics,and magnonics have been summarized and compared.Firstly,the history of the spintronics has been briefly reviewed.Moreover,the recent development o...In this review,the recent developments in microelectronics,spintronics,and magnonics have been summarized and compared.Firstly,the history of the spintronics has been briefly reviewed.Moreover,the recent development of magnonics such as magnon-mediated current drag effect(MCDE),magnon valve effect(MVE),magnon junction effect(MJE),magnon blocking effect(MBE),magnon-mediated nonlocal spin Hall magnetoresistance(MNSMR),magnon-transfer torque(MTT)effect,and magnon resonant tunneling(MRT)effect,magnon skin effect(MSE),etc.,existing in magnon junctions or magnon heterojunctions,have been summarized and their potential applications in memory and logic devices,etc.,are prospected,from which we can see a promising future for spintronics and magnonics beyond micro-electronics.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.51525103,51522105,and 11304326)the National Key Technology Research and Development Program of China(Grant No.2016YFA0201102)+1 种基金Ningbo Municipal Science and Technology Innovation Team,China(Grant No.2015B11001)the Ningbo Municipal Major Science and Technology Projects,China(Grant No.2015B11027)
文摘A polyvinylidene-fluoride（PVDF）-based magnetoelectric torque（MET） device is designed with elastic layer sandwiched by PVDF layers, and low-frequency MET effect is carefully studied. It is found that elastic modulus and thickness of the elastic layer have great influences on magnetoelectric（ME） voltage coefficient（α（ME）） and working range of frequency in PVDF-based MET device. The decrease of the modulus and thickness can help increase the α ME. However,it can also reduce the working range in the low frequency. By optimizing the parameters, the giant α（ME） of 320 V/cm·Oe（1 Oe = 79.5775 A·m^-1 at low frequency（1 Hz） can be obtained. The present results may help design PVDF-based MET low-frequency magnetic sensor with improved magnetic sensitivity in a relative large frequency range.
基金supported by the State Key Project of Fundamental Research of Ministry of Science and Technology,China(Grant No.2010CB934400)the National Natural Science Foundation of China(Grant Nos.51229101 and 11374351)
文摘Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
基金Project supported by the National Key Research and Development Program of China(Grants No.2017YFA0206200)the National Natural Science Foundation of China(Grant Nos.51831012 and 12134107)the Beijing Natural Science Foundation(Grant No.Z201100004220006)。
文摘In this review,the recent developments in microelectronics,spintronics,and magnonics have been summarized and compared.Firstly,the history of the spintronics has been briefly reviewed.Moreover,the recent development of magnonics such as magnon-mediated current drag effect(MCDE),magnon valve effect(MVE),magnon junction effect(MJE),magnon blocking effect(MBE),magnon-mediated nonlocal spin Hall magnetoresistance(MNSMR),magnon-transfer torque(MTT)effect,and magnon resonant tunneling(MRT)effect,magnon skin effect(MSE),etc.,existing in magnon junctions or magnon heterojunctions,have been summarized and their potential applications in memory and logic devices,etc.,are prospected,from which we can see a promising future for spintronics and magnonics beyond micro-electronics.
