The skin effect in the reversely switched dynistor （RSD） devices is investigated in this paper. Based on the plasma bipolar drift model of the RSD, the current density distributions on the chip are simulated with co...The skin effect in the reversely switched dynistor （RSD） devices is investigated in this paper. Based on the plasma bipolar drift model of the RSD, the current density distributions on the chip are simulated with considering the skin effect. The results indicate that the current density on the border can be several hundred to a thousand A/cm2 higher than that in the center of the chip. The skin effect becomes more prominent as the voltage increases and the inductance decreases in the main circuit. The phenomenon that most of a certain group of chips break over on the border has proved the existence of the skin effect.展开更多
In the reversely switched dynistor(RSD)-based pulse power circuits,a magnetic switch is usually necessary to be applied together with a main switch.It occupies space and needs a magnetic reset.In this paper,a method o...In the reversely switched dynistor(RSD)-based pulse power circuits,a magnetic switch is usually necessary to be applied together with a main switch.It occupies space and needs a magnetic reset.In this paper,a method of designing a RSD-based pulse circuit without a magnetic switch is proposed.In the pulse circuit,a RBDT(reverse blocking diode thyristor)is used to separate the two capacitors and provide an energy branch.The pre-charge time of the RSD can be guaranteed by the energy conversion between the capacitors and inductors,instead of the saturation of the magnetic switch.In addition,the energy which is reused to trigger the RSD is based on an inductor.The pulse circuit is evaluated by simulations and practical experiments.According to the experimental results,the factors affecting the load pulse current and triggering of the RSD and RBDT are studied.Meanwhile,a method to reduce the current in the trigger switch,which is a potential problem in the pulse circuit,is proposed.展开更多
为了进行电磁轨道炮发射机理研究,研制了一套基于反向导通双晶复合晶体管(RSD)全固态开关的电容储能型脉冲功率电源。RSD开关采用可控等离子体换流技术,具有全面积均匀同步导通、开通损耗小、功率大、换流效率高、寿命长的特点。电源系...为了进行电磁轨道炮发射机理研究,研制了一套基于反向导通双晶复合晶体管(RSD)全固态开关的电容储能型脉冲功率电源。RSD开关采用可控等离子体换流技术,具有全面积均匀同步导通、开通损耗小、功率大、换流效率高、寿命长的特点。电源系统由16个64 k J储能模块并联组成,采用一体化紧凑设计,内嵌充电、控制、保护与测量功能。系统额定电压18 k V、总储能1 MJ,可通过时序控制对放电波形进行调节,短路同步放电峰值可达960 k A.系统在20 mm口径电磁轨道炮上进行了多次发射试验,结果表明脉冲电源系统可靠性高,一致性好,输出波形灵活可调,满足轨道炮超高速发射研究的需要。展开更多
The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift ...The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge-Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320μm when doping concentration is 1.0×10^14cm^-3 while the doping concentration should be higher than 5.8×10^13cm^-3 when n-base width is 270μm.展开更多
基金supported by the National Natural Science Foundation of China under Grant No.50577028the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No.20050487044the China Postdoctoral Science Foundation under Grant No.20080440931
文摘The skin effect in the reversely switched dynistor （RSD） devices is investigated in this paper. Based on the plasma bipolar drift model of the RSD, the current density distributions on the chip are simulated with considering the skin effect. The results indicate that the current density on the border can be several hundred to a thousand A/cm2 higher than that in the center of the chip. The skin effect becomes more prominent as the voltage increases and the inductance decreases in the main circuit. The phenomenon that most of a certain group of chips break over on the border has proved the existence of the skin effect.
基金This work was supported by the National Natural Science Foundation of China(51877092,51377069).
文摘In the reversely switched dynistor(RSD)-based pulse power circuits,a magnetic switch is usually necessary to be applied together with a main switch.It occupies space and needs a magnetic reset.In this paper,a method of designing a RSD-based pulse circuit without a magnetic switch is proposed.In the pulse circuit,a RBDT(reverse blocking diode thyristor)is used to separate the two capacitors and provide an energy branch.The pre-charge time of the RSD can be guaranteed by the energy conversion between the capacitors and inductors,instead of the saturation of the magnetic switch.In addition,the energy which is reused to trigger the RSD is based on an inductor.The pulse circuit is evaluated by simulations and practical experiments.According to the experimental results,the factors affecting the load pulse current and triggering of the RSD and RBDT are studied.Meanwhile,a method to reduce the current in the trigger switch,which is a potential problem in the pulse circuit,is proposed.
文摘为了进行电磁轨道炮发射机理研究,研制了一套基于反向导通双晶复合晶体管(RSD)全固态开关的电容储能型脉冲功率电源。RSD开关采用可控等离子体换流技术,具有全面积均匀同步导通、开通损耗小、功率大、换流效率高、寿命长的特点。电源系统由16个64 k J储能模块并联组成,采用一体化紧凑设计,内嵌充电、控制、保护与测量功能。系统额定电压18 k V、总储能1 MJ,可通过时序控制对放电波形进行调节,短路同步放电峰值可达960 k A.系统在20 mm口径电磁轨道炮上进行了多次发射试验,结果表明脉冲电源系统可靠性高,一致性好,输出波形灵活可调,满足轨道炮超高速发射研究的需要。
基金supported by the National Natural Science Foundation of China (Grant Nos 50277016 and 50577028)supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20050487044)
文摘The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge-Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320μm when doping concentration is 1.0×10^14cm^-3 while the doping concentration should be higher than 5.8×10^13cm^-3 when n-base width is 270μm.
