A large area multi-finger configuration power SiGe HBT device （with an emitter area of about 880μm^2） was fabricated with 2μm double-mesa technology. The maximum DC current gain β is 214. The BVCEO is up to 10V,a...A large area multi-finger configuration power SiGe HBT device （with an emitter area of about 880μm^2） was fabricated with 2μm double-mesa technology. The maximum DC current gain β is 214. The BVCEO is up to 10V,and the BVCBO is up to 16V with a collector doping concentration of 1 × 10^17cm^-3 and collector thickness of 400nm. The device exhibits a maximum oscillation frequency fmax of 19. 3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of Ic = 30mA and VCE = 3V.MSG （maximum stable gain） is 24.5dB,and U （Mason unilateral gain） is 26.6dB at 1GHz. Due to the novel distribution layout, no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.展开更多
文摘A large area multi-finger configuration power SiGe HBT device （with an emitter area of about 880μm^2） was fabricated with 2μm double-mesa technology. The maximum DC current gain β is 214. The BVCEO is up to 10V,and the BVCBO is up to 16V with a collector doping concentration of 1 × 10^17cm^-3 and collector thickness of 400nm. The device exhibits a maximum oscillation frequency fmax of 19. 3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of Ic = 30mA and VCE = 3V.MSG （maximum stable gain） is 24.5dB,and U （Mason unilateral gain） is 26.6dB at 1GHz. Due to the novel distribution layout, no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.
