To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as disl...To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS)scattering,polar optical phonon(POP)scattering,piezoelectric field(PE)scattering,interface roughness(IFR)scattering,deformation potential(DP)scattering,alloy disorder(ADO)scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH)to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH)is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2DEG)density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.04)N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.展开更多
A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTe substrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gap of ...A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTe substrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gap of the active region can be adjusted by controlling Eu composition (x value) in the active region.It was obtained that x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The results measured from SEM and electrical properties show that the Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure has a homogeneous morphology and an obvious junction character.展开更多
基金Project supported by the Xi'an Science and Technology Program,China(Grant No.2019217814GXRC014CG015-GXYD14.3)the Open Project of Key Laboratory of Wide Band-gap Semiconductor Materials,Ministry of Education,China(Grant No.Kdxkf2019-01).
文摘To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS)scattering,polar optical phonon(POP)scattering,piezoelectric field(PE)scattering,interface roughness(IFR)scattering,deformation potential(DP)scattering,alloy disorder(ADO)scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH)to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH)is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2DEG)density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.04)N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.
文摘A Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure was grown successfully on a p-type (100)_oriented PbTe substrate by molecular beam epitaxy.In order to obtain semiconductor laser emitting at 2～4 μm,the band gap of the active region can be adjusted by controlling Eu composition (x value) in the active region.It was obtained that x=0.012,y=0.016 for the active region and x=0.030,y=0.016 for the confinement layers.The results measured from SEM and electrical properties show that the Pb_(1-x)Eu_xSe_yTe_(1-y) double heterostructure has a homogeneous morphology and an obvious junction character.
