Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong bulk-in electric field （BEF） in strained w...Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong bulk-in electric field （BEF） in strained wurtzite ZnO/Mgo.25Zno.750 quantum dots （QDs）, the optical properties of ionized donor-bound excitons （D^＋, X） are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of （D^＋, X） complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of （D^＋, X） complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.展开更多
The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically. The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a G...The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically. The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included. Numerical calculations are performed using a variational procedure within the single band effective mass approximation. Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed. The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton. It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased, and that the exciton binding energy, the oscillator strength and the radiative lifetime each as a function of structural parameters （height and radius） sensitively depend on the strong built-in electric field. The obtained results are useful for the design of some opto-photoelectronic devices.展开更多
基金Project supported by the National Natural Science Foundation for Young Scientists of China(No.11102100)the Program for New Century Excellent Talents in Fujian Province University(No.JA14285)the Program for Young Top-Notch Innovative Talents of Fujian Province of China
文摘Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong bulk-in electric field （BEF） in strained wurtzite ZnO/Mgo.25Zno.750 quantum dots （QDs）, the optical properties of ionized donor-bound excitons （D^＋, X） are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of （D^＋, X） complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of （D^＋, X） complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.
基金Project supported by the University Grants Commission,India (Grant No.38-8/2009(SR))
文摘The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically. The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included. Numerical calculations are performed using a variational procedure within the single band effective mass approximation. Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed. The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton. It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased, and that the exciton binding energy, the oscillator strength and the radiative lifetime each as a function of structural parameters （height and radius） sensitively depend on the strong built-in electric field. The obtained results are useful for the design of some opto-photoelectronic devices.
