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Displacement damage effects on the p-GaN HEMT induced by neutrons at Back-n in the China Spallation Neutron Source
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作者 Yu-Fei Liu Li-Li Ding +3 位作者 Yuan-Yuan Xue Shu-Xuan Zhang Wei Chen Yong-Tao Zhao 《Chinese Physics B》 2025年第10期475-480,共6页
Irradiation experiments on p-Ga N gate high-electron-mobility transistors(HEMTs) were conducted using neutrons at Back-streaming White Neutron(Back-n) facility at the China Spallation Neutron Source(CSNS).Two groups o... Irradiation experiments on p-Ga N gate high-electron-mobility transistors(HEMTs) were conducted using neutrons at Back-streaming White Neutron(Back-n) facility at the China Spallation Neutron Source(CSNS).Two groups of devices were float-biased,while one group was ON-biased.Post-irradiation analysis revealed that the electrical performance of the devices exhibited progressive degradation with increasing Back-n fluence,with the ON-biased group demonstrating the most pronounced deterioration.This degradation was primarily characterized by a negative shift in the threshold voltage,a significant increase in reverse gate leakage current,and a slight reduction in forward gate leakage.Further analysis of the gate leakage current and capacitance-voltage characteristics indicated an elevated concentration of two-dimensional electron gas(2DEG),attributed to donor-type defects introduced within the barrier layer by Back-n irradiation.These defects act as hole traps,converting into fixed positive charges that deepen the quantum-well conduction band,thereby enhancing the 2DEG density.Additionally,through the trap-assisted tunneling mechanism,these defects serve as tunneling centers,increasing the probability of electron tunneling and consequently elevating the reverse gate leakage current. 展开更多
关键词 displacement damage effects HEMT Back-n CSNS threshold voltage shift
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Comparison of displacement damage effects on the dark signal in CMOS image sensors induced by CSNS back-n and XAPR neutrons 被引量:1
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作者 Yuan-Yuan Xue Zu-Jun Wang +3 位作者 Wu-Ying Ma Min-Bo Liu Bao-Ping He Shi-Long Gou 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2024年第10期29-40,共12页
This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi... This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values. 展开更多
关键词 displacement damage effects CMOS image sensor(CIS) CSNS back-n XAPR neutrons Geant4 Dark signal non-uniformity(DSNU)
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Displacement damage effects in MoS_(2)-based electronics
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作者 Kaiyue He Zhanqi Li +7 位作者 Taotao Li Yifu Sun Shitong Zhu Chao Wu Huiping Zhu Peng Lu Xinran Wang Maguang Zhu 《Journal of Semiconductors》 EI CAS CSCD 2024年第12期152-158,共7页
Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),w... Owing to the unique characteristics of ultra-thin body and nanoscale sensitivity volume,MoS_(2)-based field-effect tran-sistors(FETs)are regarded as optimal components for radiation-hardened integrated circuits(ICs),which is exponentially grow-ing demanded especially in the fields of space exploration and the nuclear industry.Many researches on MoS_(2)-based radiation tolerance electronics focused on the total ionizing dose(TID)effect,while few works concerned the displacement damage(DD)effects,which is more challenging to measure and more crucial for practical applications.We first conducted measurements to assess the DD effects of MoS_(2) FETs,and then presented the stopping and ranges of ions in matter(SRIM)simulation to analysis the DD degradation mechanism in MoS_(2) electronics.The monolayer MoS_(2)-based FETs exhibit DD radiation tolerance up to 1.56×1013 MeV/g,which is at least two order of magnitude than that in conventional radiation hardened ICs.The exceptional DD radiation tolerance will significantly enhance the deployment of MoS_(2) integrated circuits in environments characterized by high-energy solar and cosmic radiation exposure. 展开更多
关键词 MoS_(2) field effect transistor displacement damage effect radiation hardness proton radiation
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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source 被引量:2
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作者 薛院院 王祖军 +9 位作者 陈伟 郭晓强 姚志斌 何宝平 聂栩 赖善坤 黄港 盛江坤 马武英 缑石龙 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第7期435-442,共8页
Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi... Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal. 展开更多
关键词 displacement damage effects charge-coupled device(CCD) China Spallation Neutron Source(CSNS) MECHANISMS technology computer-aided design(TCAD)
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Law of imbibition effect on shale gas occurrence state
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作者 Hu Zhiming Mu Ying +2 位作者 Gu Zhaobin Duan Xianggang Li Yalong 《Natural Gas Industry B》 2020年第6期624-630,共7页
So far,how imbibition effect changes the occurrence state of shale gas has not been quantitatively understood,and the law of gasewater dynamic displacement caused by the retention of abundant fracturingfluid in a shal... So far,how imbibition effect changes the occurrence state of shale gas has not been quantitatively understood,and the law of gasewater dynamic displacement caused by the retention of abundant fracturingfluid in a shale reservoir has not been determined clearly.In this paper,a gasewater displacement experiment was performed to simulate the change in the water content of shale near the wellbore after hy-draulic fracturing.Then,based on the lowfield nuclear magnetic resonance spectrum analysis technique of hydrogen-bearingfluid(1H-NMR),the occurrence state of methane in shale reservoirs was dynamically monitored and methane volume in different occurrence states was calculated.Finally,the law of imbibition effect on the occurrence state of shale gas was studied.And the following research results were obtained.First,the process of shale saturation with methane is divided into adsorption-dominant phase and pore-filling phase.And adsorption and pressure gradient play a role simultaneously in the process of shale saturation with methane.Second,in the early stage of the process of shale saturation with methane,priority is given to saturated adsorbed gas,and free methane exists in shale pores as an intermediate state in which the external methane is converted to the adsorbed methane.After the adsorbed gas reaches the saturated state,methanefills shale pores under the pressure gradient until the pressure inside and outside the pores is balanced.Third,imbibition effect leads to the occurrence of gasewater displacement in shale.The adsorbed methane is partially desorbed into free methane,and the proportion of adsorbed gas is reduced.After 80 h'imbibition,the proportion of adsorbed gas is reduced from 63.58%to 45.87%.The increase of free gas volume results in the rise of shale pore pressure.And at the same time,water occupies partial pore volume to compress the storage space of free gas and expel some free gas out of shale pores.In this way,the gas bearing property of the reservoir is deteriorated,and the gas content of the shale sample is reduced to 7.34 mL/g from 7.91 mL/g which is the value before the beginning of imbibition.Fourth,the retention of abundant fracturingfluid in the process of hydraulic fracturing makes the shale reservoir near the wellbore in the state of rich water,the gasewater displacement induced by imbibition effect increases the volume of free methane in the external space(such as shale pore and wellbore),and the increase of pore pressure leads to the rise of the formation pressure,which is beneficial to the exploitation of shale gas to a certain extent. 展开更多
关键词 Shale gas RESERVOIR Hydraulic fracturing Occurrence state NMR Imbibition effect Gasewater displacement effect
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Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation 被引量:3
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作者 Xiaorui Zhang Huiping Zhu +12 位作者 Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin 《Journal of Semiconductors》 EI CAS CSCD 2021年第11期18-25,共8页
Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work comb... Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts. 展开更多
关键词 SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation
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Internal co-seismic deformation and curvature effect based on an analytical approach
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作者 Jie Dong Wenke Sun 《Earthquake Science》 CSCD 2017年第1期47-56,共10页
In this study, we present a new method to compute internal co-seismic deformations of a homoge- neous sphere, based on our previous approach (Dong et al. 2016). In practical numerical computations, we consider a str... In this study, we present a new method to compute internal co-seismic deformations of a homoge- neous sphere, based on our previous approach (Dong et al. 2016). In practical numerical computations, we consider a strike-slip point source as an example, and compute the vertical co-seismic displacement on different internal spherical surfaces (including the Earth surface). Numerical results show that the internal co-seismic deformations are generally larger than that on the Earth surface; especially, the maximum co-seismic displacement appears around the seismic source. The co-seismic displacements are opposite in sign for the areas over and beneath the position of the seismic source. The results also indicate that the curvature effect of the internal deformation is pretty large, and larger than that on the Earth surface. The results indicate that the dislocation theory for a sphere is necessary in computing internal co-seismic deformations. 展开更多
关键词 Internal displacement. Curvature effect. Spherical model
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Study of Polymer Flooding in Heterogeneous Porous Media by Using Nuclear Magnetic Resonance
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作者 Xing Zhang 《Energy Engineering》 EI 2021年第5期1453-1467,共15页
Polymer has been successfully used to enhance crude oil recovery at high water cut stage.However,the application of polymer flooding is limited by the heterogeneity of reservoir.In this work,the role of polymer floodi... Polymer has been successfully used to enhance crude oil recovery at high water cut stage.However,the application of polymer flooding is limited by the heterogeneity of reservoir.In this work,the role of polymer flooding in heterogeneous reservoir was explored by nuclear magnetic resonance(NMR)spectroscopy.Parallel core displacement experiments were carried out to study polymer flooding in heterogeneous formation.The results showed that the polymer flooding area was related to permeability and pore connectivity.At the end of the water flooding stage,the residual oil was not evenly distributed in porous media.The percent crude oil recovery increased with the increase of pore diameter.Crude oil recovery from cores with larger pores was higher,and water broke through the highly permeable core first.After 0.3 PV polymer injection,the water mobility of the high permeability core decreased.Polymer injection showed a dual effect,an oil displacement effect and a traction effect.The oil displacement effect was responsible for driving out the crude oil in large pores,whereas the traction effect was responsible for driving out residual oil from small pores.After 1 PV polymer injection,the polymer solution channeled through the highly permeable core rapidly.The crude oil in large pores was washed out completely.The NMR water-phase spectrum line of the highly permeable core was much higher than that of the low permeable core.Under different core permeability and porosity,the NMR peak of the crude oil-phase spectrum line indicated that the polymer flooding is mainly effective on pores>40μm. 展开更多
关键词 Nuclear magnetic resonance relaxation time polymer flooding displacement effect traction effect
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A time-dependent numerical model of the mild-slope equation 被引量:3
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作者 SONG Zhiyao ZHANG Honggui KONG Jun LI Ruijie ZHANG Wei 《Acta Oceanologica Sinica》 SCIE CAS CSCD 2007年第2期106-114,共9页
On the basis of the previous studies, the simplest hyperbolic mild-slope equation has been gained and the linear time - dependent numerical model for the water wave propagation has been established combined with diffe... On the basis of the previous studies, the simplest hyperbolic mild-slope equation has been gained and the linear time - dependent numerical model for the water wave propagation has been established combined with different boundary conditions. Through computing the effective surface displacement and transforming into the real transient wave motion, related wave factors will be calculated. Compared with Lin's model, analysis shows that calculation stability of the present model is enhanced efficiently, because the truncation errors of this model are only contributed by the dissipation terms, but those of Lin's model are induced by the convection terms, dissipation terms and source terms. The tests show that the present model succeeds the merit in Lin' s model and the computational program is simpler, the computational time is shorter, and the computational stability is enhanced efficiently. The present model has the capability of simulating transient wave motion by correctly predicting at the speed of wave propagation, which is important for the real - time forecast of the arrival time of surface waves generated in the deep sea. The model is validated against analytical solution for wave diffraction and experimental data for combined wave refraction and diffraction over a submerged elliptic shoal on a slope. Good agreements are obtained. The model can be applied to the theory research an d engineering applications about the wave propagation in a biggish area. 展开更多
关键词 effective wave number effective surface displacement function numerical error stability analysis
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Effect of industrial robot use on China’s labor market:Evidence from manufacturing industry segmentation
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作者 Xinlei Gao Chunling Luo Juping Shou 《Intelligent and Converged Networks》 EI 2023年第2期106-115,共10页
This paper empirically investigates the impact of industrial robot use on China’s labor market using data from 13 segments of manufacturing industry between 2006 and 2016.According to the findings,the use of industri... This paper empirically investigates the impact of industrial robot use on China’s labor market using data from 13 segments of manufacturing industry between 2006 and 2016.According to the findings,the use of industrial robots has a displacement effect on labor demand in manufacturing industry.The specific performance is that for every 1%increase in industrial robot stock,labor demand falls by 1.8%.After endogenous processing and a robustness test,this conclusion remains valid.This paper also discusses the effects of industrial robots across industries and genders.According to the results,industrial robot applications have a more pronounced displacement effect in low-skilled manufacturing than in high-skilled manufacturing.In comparison to female workers,industrial robot applications are more likely to decrease the demand for male workers.Moreover,this paper indicates that the displacement effect is significantly influenced by labor costs.Finally,we make appropriate policy recommendations for the labor market’s employment stability based on the findings. 展开更多
关键词 industrial robot labor demand displacement effect MANUFACTURING
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COMPETITIVE INVESTMENT STRATEGIES IN ADOPTION OF NEW TECHNOLOGY WITH A FURTHER NEW TECHNOLOGY ANTICIPATED 被引量:1
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作者 Xianghua LIU Chulin LIDepartment of Mathematics Huazhong University of Science and Technology, Wuhan 43007 4,P.R. China 《Systems Science and Systems Engineering》 CSCD 2003年第4期493-502,共10页
In dynamic uncertain environments, the investment timing of the firm about adopting the existing new technology is influenced by the rival's actions and technological progress. This paper employs option games appr... In dynamic uncertain environments, the investment timing of the firm about adopting the existing new technology is influenced by the rival's actions and technological progress. This paper employs option games approach to present a simplified duopoly continuous time model of technology adoption. In the model, the irreversible investment in adoption of the existing new technology is in strategic competitive circumstances and facing the threat of a further new technology after the competition setting is established. The purpose of the paper is to examine the effect of technological displacement on firms' strategic investment. The results show that rapid displacement of the technology encourages the leader's investment and discourages the follower's investment. Comparing with the optimal timing without the expectation of a further new technology, the firm hastens to invest when no firm has invested; however, once one firm has invested first, the firm will delay its investment. Using mixed strategy analysis, competitive investment strategies with sequential exercise and simultaneous exercise are derived. 展开更多
关键词 Option games technology adoption displacement effect
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