A series of blue and blue‑green Ir(Ⅲ)complexes has been investigated theoretically to explore their electronic structures,photophysical properties,efficiency roll‑off effect,and thermal activation delayed fluorescenc...A series of blue and blue‑green Ir(Ⅲ)complexes has been investigated theoretically to explore their electronic structures,photophysical properties,efficiency roll‑off effect,and thermal activation delayed fluorescence(TADF)properties.All calculations were performed using density functional theory(DFT)and time‑dependent density functional theory(TDDFT).Calculations for electronic structures,frontier molecular orbital characteristics(which determine the efficiency roll‑off effect of the complexes),and photophysical properties were conducted using the Gaussian 09 software package.The calculation of spin‑orbit coupling matrix elements<T|HSOC|S>,which determine the TADF properties of the complexes,was performed using the ORCA software package.The calculation results show that the auxiliary ligand tetraphenylimidodiphosphinate(tpip),a strong electron‑withdrawing group,can mitigate the efficiency roll‑off effect of the complex.Furthermore,TADF is observed in one of the designed complexes,(F_(3)Phppy)_(2)Ir(tpip),where F_(3)Phppy=2‑[4‑(2,4,6‑trifluorophenyl)phenyl]pyridine.展开更多
Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of e...Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.展开更多
Low-dimensional(LD)halide perovskites have attracted considerable attention due to their distinctive structures and exceptional optoelectronic properties,including high absorption coefficients,extended charge carrier ...Low-dimensional(LD)halide perovskites have attracted considerable attention due to their distinctive structures and exceptional optoelectronic properties,including high absorption coefficients,extended charge carrier diffusion lengths,suppressed non-radiative recombination rates,and intense photoluminescence.A key advantage of LD perovskites is the tunability of their optical and electronic properties through the precise optimization of their structural arrangements and dimensionality.This review systematically examines recent progress in the synthesis and optoelectronic characterizations of LD perovskites,focusing on their structural,optical,and photophysical properties that underpin their versatility in diverse applications.The review further summarizes advancements in LD perovskite-based devices,including resistive memory,artificial synapses,photodetectors,light-emitting diodes,and solar cells.Finally,the challenges associated with stability,scalability,and integration,as well as future prospects,are discussed,emphasizing the potential of LD perovskites to drive breakthroughs in device efficiency and industrial applicability.展开更多
With the rapid development of large-scale offshore wind farms,efficient and reliable power transmission systems are urgently needed.Hybrid high-voltage direct current(HVDC)configurations combining a diode rectifier un...With the rapid development of large-scale offshore wind farms,efficient and reliable power transmission systems are urgently needed.Hybrid high-voltage direct current(HVDC)configurations combining a diode rectifier unit(DRU)and a modular multilevel converter(MMC)have emerged as a promising solution,offering advantages in cost-effectiveness and control capability.However,the uncontrollable nature of the DRU poses significant challenges for systemstability under offshore AC fault conditions,particularly due to its inability to provide fault current or voltage support.This paper investigates the offshore AC fault characteristics and fault ride-through(FRT)strategy of a hybrid offshore wind power transmission system based on a diode rectifier unit DRU and MMC.First,the dynamic response of the hybrid system under offshore symmetrical three-phase faults is analyzed.It is demonstrated that due to the unidirectional conduction nature of the DRU,its AC current rapidly drops to zero during faults,and the fault current is solely contributed by the wind turbine generators(WTGs)and wind farm MMC(WFMMC).Based on this analysis,a coordinated FRT strategy is proposed,which combines a segmented current limiting control for the wind-turbine(WT)grid-side converters(GSCs)and a constant AC current control for the WFMMC.The strategy ensures effective voltage support during the fault and prevents MMC current saturation during fault recovery,enabling fast and stable system restoration.Electromagnetic transient simulations in PSCAD/EMTDC verify the feasibility of the proposed fault ride-through strategy.展开更多
The construction of long-range charge-transfer(LRCT)states has emerged as a promising strategy to improve the reverse intersystem crossing(RISC)of multiple resonance thermally activated delayed fluorescence(MR-TADF)em...The construction of long-range charge-transfer(LRCT)states has emerged as a promising strategy to improve the reverse intersystem crossing(RISC)of multiple resonance thermally activated delayed fluorescence(MR-TADF)emitters,yet balancing LRCT with short-range charge-transfer(SRCT)states remains a significant challenge.To address this,we developed a machine learning-based empirical formula to accurately predict whether LRCT/SRCT-type TADF molecules can retain narrowband emission,thereby aiding the design of novel molecules.Guided by this empirical formula,the proof-of-concept emitter DABNA-TP-Di PXZ exhibited fully hybridized LRCT and SRCT states with deep-blue emission peaking at 445 nm and an impressively narrow full width at half maximum(FWHM)of 19 nm.The corresponding device exhibited outstanding performance,achieving a maximum external quantum efficiency(EQE_(max))of 32%,and Commission Internationale de L'Eclairage(CIE)coordinates of(0.14,0.06).Moreover,it delivered a remarkably high chromaticity efficiency of 367 cd/A,representing the highest value reported among LRCT/SRCT type TADF emitters.These results underscore the remarkable efficiency and color purity of DABNA-TP-Di PXZ,demonstrating the effectiveness of our molecular design strategy in advancing high-performance and high-purity deep-blue emitters.展开更多
To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polym...To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.展开更多
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated chara...A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.展开更多
A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep aval...A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.展开更多
Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectr...Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
Thermally activated delayed fluorescence(TADF)materials driven by a through-space charge transfer(TSCT)mechanism have garnered wide interest.However,access of TSCT-TADF molecules with longwavelength emission remains a...Thermally activated delayed fluorescence(TADF)materials driven by a through-space charge transfer(TSCT)mechanism have garnered wide interest.However,access of TSCT-TADF molecules with longwavelength emission remains a formidable challenge.In this study,we introduce a novel V-type DA-D-A’emitter,Trz-mCzCbCz,by using a carborane scaffold.This design strategically incorporates carbazole(Cz)and 2,4,6-triphenyl-1,3,5-triazine(Trz)as donor and acceptor moieties,respectively.Theoretical calculations alongside experimental validations affirm the typical TSCT-TADF characteristics of this luminogen.Owing to the unique structural and electronic attributes of carboranes,Trz-mCzCbCz exhibits an orange-red emission,markedly diverging from the traditional blue-to-green emissions observed in classical Cz and Trz-based TADF molecules.Moreover,bright emission in aggregates was observed for Trz-mCzCbCz with absolute photoluminescence quantum yield(PLQY)of up to 88.8%.As such,we have successfully fabricated five organic light-emitting diodes(OLEDs)by utilizing Trz-mCzCbCz as the emitting layer.It is important to note that both the reverse intersystem crossing process and the TADF properties are profoundly influenced by host materials.The fabricated OLED devices reached a maximum external quantum efficiency(EQE)of 12.7%,with an emission peak at 592 nm.This represents the highest recorded efficiency for TSCT-TADF OLEDs employing carborane derivatives as emitting layers.展开更多
Multiple quantum well(MQW) Ⅲ-nitride diodes that can simultaneously emit and detect light feature an overlapping region between their electroluminescence and responsivity spectra, which allows them to be simultaneous...Multiple quantum well(MQW) Ⅲ-nitride diodes that can simultaneously emit and detect light feature an overlapping region between their electroluminescence and responsivity spectra, which allows them to be simultaneously used as both a transmitter and a receiver in a wireless light communication system. Here, we demonstrate a mobile light communication system using a time-division multiplexing(TDM) scheme to achieve bidirectional data transmission via the same optical channel.Two identical blue MQW diodes are defined by software as a transmitter or a receiver. To address the light alignment issue, an image identification module integrated with a gimbal stabilizer is used to automatically detect the locations of moving targets;thus, underwater audio communication is realized via a mobile blue-light TDM communication mode. This approach not only uses a single link but also integrates mobile nodes in a practical network.展开更多
Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices.Furthermore,they are crucial for applications in the fields of energy,display,healthcare,a...Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices.Furthermore,they are crucial for applications in the fields of energy,display,healthcare,and soft robotics.Conducting meshes represent a promising alternative to traditional,brittle,metal oxide conductors due to their high electrical conductivity,optical transparency,and enhanced mechanical flexibility.In this paper,we present a simple method for fabricating an ultra-transparent conducting metal oxide mesh electrode using selfcracking-assisted templates.Using this method,we produced an electrode with ultra-transparency(97.39%),high conductance(Rs=21.24Ωsq^(−1)),elevated work function(5.16 eV),and good mechanical stability.We also evaluated the effectiveness of the fabricated electrodes by integrating them into organic photovoltaics,organic light-emitting diodes,and flexible transparent memristor devices for neuromorphic computing,resulting in exceptional device performance.In addition,the unique porous structure of the vanadium-doped indium zinc oxide mesh electrodes provided excellent flexibility,rendering them a promising option for application in flexible optoelectronics.展开更多
Two tetrasubstituted carbazole derivatives TBICz and TOXDCz have been designed and synthesized,which possess the twist skeletons and exhibit excellent thermal and morphological stabilities.Utilizing these novel compou...Two tetrasubstituted carbazole derivatives TBICz and TOXDCz have been designed and synthesized,which possess the twist skeletons and exhibit excellent thermal and morphological stabilities.Utilizing these novel compounds as host material,high efficiency solution-processed green phosphorescent organic light-emitting diodes(PhOLEDs)have been achieved.The high triplet energies of TBICz and TOXDCz ensure efficient energy transfer from the host to the phosphor and triplet exciton confinement on the phosphor.Solution-processable green phospho⁃rescent devices employing Ir(ppy)3 as vip and the two tetrasubstituted carbazole derivatives as hosts exhibit high ef⁃ficiencies.The best EL performance is achieved for the TBICz-based device,with a maximum current efficiency of 27.3 cd/A,a maximum power efficiency of 15.9 lm/W,and a maximum external quantum efficiency of 7.8%,which provides more host material options for solution-processed OLEDs.展开更多
We have examined the theoretical implications of combining two main and three auxiliary ligands to form several Ir(Ⅲ)complexes featuring a transition metal as their core atom to identify some appropriate organic ligh...We have examined the theoretical implications of combining two main and three auxiliary ligands to form several Ir(Ⅲ)complexes featuring a transition metal as their core atom to identify some appropriate organic lightemitting diode(OLED)materials.By utilizing electronic structure,frontier molecular orbitals,minimum single-line absorption,triplet excited states,and emission spectral data derived from the density functional theory,the usefulness of these Ir(Ⅲ)complexes,including(piq)_(2)Ir(acac),(piq)_(2)Ir(tmd),(piq)_(2)Ir(tpip),(fpiq)_(2)Ir(acac),(fpiq)_(2)Ir(tmd),and(fpiq)_(2)Ir(tpip),in OLEDs was examined,where piq=1-phenylisoquinoline,fpiq=1-(4-fluorophenyl)isoquinoline,acac=(3Z)-4-hydroxypent-3-en-2-one,tmd=(4Z)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one,and tpip=tetraphenylimido-diphosphonate.These complexes all have low-efficiency roll-off properties,especially(fpiq)_(2)Ir(tpip).Some researchers have successfully synthesized complexes extremely similar to(piq)_(2)Ir(acac)through the Suzuki-Miyaura coupling reaction.展开更多
In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the ...In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the rapid determination of optimal embedding impedance for diodes across a specific bandwidth to achieve maximum efficiency through harmonic balance simulations.By optimizing the linear matching circuit with the optimal embedding impedance,the method effectively segregates the simulation of the linear segments from the nonlinear segments in the frequency multiplier circuit,substantially improving the speed of simulations.The design of on-chip linear matching circuits adopts a modular circuit design strategy,incorporating fixed load resistors to simplify the matching challenge.Utilizing this approach,a 340 GHz frequency doubler was developed and measured.The results demonstrate that,across a bandwidth of 330 GHz to 342 GHz,the efficiency of the doubler remains above 10%,with an input power ranging from 98 mW to 141mW and an output power exceeding 13 mW.Notably,at an input power of 141 mW,a peak output power of 21.8 mW was achieved at 334 GHz,corresponding to an efficiency of 15.8%.展开更多
There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LED...Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.展开更多
文摘A series of blue and blue‑green Ir(Ⅲ)complexes has been investigated theoretically to explore their electronic structures,photophysical properties,efficiency roll‑off effect,and thermal activation delayed fluorescence(TADF)properties.All calculations were performed using density functional theory(DFT)and time‑dependent density functional theory(TDDFT).Calculations for electronic structures,frontier molecular orbital characteristics(which determine the efficiency roll‑off effect of the complexes),and photophysical properties were conducted using the Gaussian 09 software package.The calculation of spin‑orbit coupling matrix elements<T|HSOC|S>,which determine the TADF properties of the complexes,was performed using the ORCA software package.The calculation results show that the auxiliary ligand tetraphenylimidodiphosphinate(tpip),a strong electron‑withdrawing group,can mitigate the efficiency roll‑off effect of the complex.Furthermore,TADF is observed in one of the designed complexes,(F_(3)Phppy)_(2)Ir(tpip),where F_(3)Phppy=2‑[4‑(2,4,6‑trifluorophenyl)phenyl]pyridine.
基金supported by the National Key R&D Program of China (Grant No.2023YFA1406400)the National Natural Science Foundation of China (Grant Nos.12534005 and 12325402)。
文摘Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.
基金funding from FCT(Fundagao para a Ciencia e Tecnologia,I.P.)under the projects LA/P/0037/2020,UIDP/50025/2020 and UIDB/50025/2020 of the Associate Laboratory Institute of Nanostructures,Nanomodelling and Nanofabrication-i3Nby the projects FlexSolar(PTDC/CTM-REF/1008/2020),and SpaceFlex(2022.01610.PTDC,DOI:10.54499/2022.01610.PTDC)+1 种基金supported by the project M-ECO2-Industrial Cluster for advanced biofuel production,Ref.C644930471-00000041,R2U Technologies and Befunding from the European Union via the project X-STREAM(Horizon EU,ERC CoG,No 101124803)the support of a fellowship from the"la Caixa"Foundation(ID 100010434)。
文摘Low-dimensional(LD)halide perovskites have attracted considerable attention due to their distinctive structures and exceptional optoelectronic properties,including high absorption coefficients,extended charge carrier diffusion lengths,suppressed non-radiative recombination rates,and intense photoluminescence.A key advantage of LD perovskites is the tunability of their optical and electronic properties through the precise optimization of their structural arrangements and dimensionality.This review systematically examines recent progress in the synthesis and optoelectronic characterizations of LD perovskites,focusing on their structural,optical,and photophysical properties that underpin their versatility in diverse applications.The review further summarizes advancements in LD perovskite-based devices,including resistive memory,artificial synapses,photodetectors,light-emitting diodes,and solar cells.Finally,the challenges associated with stability,scalability,and integration,as well as future prospects,are discussed,emphasizing the potential of LD perovskites to drive breakthroughs in device efficiency and industrial applicability.
基金funded by the Science and Technology Projects of State Grid Zhejiang Electric Power Co.,Ltd.(5211DS24000G).
文摘With the rapid development of large-scale offshore wind farms,efficient and reliable power transmission systems are urgently needed.Hybrid high-voltage direct current(HVDC)configurations combining a diode rectifier unit(DRU)and a modular multilevel converter(MMC)have emerged as a promising solution,offering advantages in cost-effectiveness and control capability.However,the uncontrollable nature of the DRU poses significant challenges for systemstability under offshore AC fault conditions,particularly due to its inability to provide fault current or voltage support.This paper investigates the offshore AC fault characteristics and fault ride-through(FRT)strategy of a hybrid offshore wind power transmission system based on a diode rectifier unit DRU and MMC.First,the dynamic response of the hybrid system under offshore symmetrical three-phase faults is analyzed.It is demonstrated that due to the unidirectional conduction nature of the DRU,its AC current rapidly drops to zero during faults,and the fault current is solely contributed by the wind turbine generators(WTGs)and wind farm MMC(WFMMC).Based on this analysis,a coordinated FRT strategy is proposed,which combines a segmented current limiting control for the wind-turbine(WT)grid-side converters(GSCs)and a constant AC current control for the WFMMC.The strategy ensures effective voltage support during the fault and prevents MMC current saturation during fault recovery,enabling fast and stable system restoration.Electromagnetic transient simulations in PSCAD/EMTDC verify the feasibility of the proposed fault ride-through strategy.
基金supported by the Wuhan Joint Innovation Laboratory of Advanced Display Industry(2024010902040449)the National Natural Science Foundation of China(52473175)+1 种基金the Science and Technology Department of Hubei Province(2024BAB014)the Shenzhen Science and Technology Program(JCYJ20220530161208020,JCYJ20240813153419026)。
文摘The construction of long-range charge-transfer(LRCT)states has emerged as a promising strategy to improve the reverse intersystem crossing(RISC)of multiple resonance thermally activated delayed fluorescence(MR-TADF)emitters,yet balancing LRCT with short-range charge-transfer(SRCT)states remains a significant challenge.To address this,we developed a machine learning-based empirical formula to accurately predict whether LRCT/SRCT-type TADF molecules can retain narrowband emission,thereby aiding the design of novel molecules.Guided by this empirical formula,the proof-of-concept emitter DABNA-TP-Di PXZ exhibited fully hybridized LRCT and SRCT states with deep-blue emission peaking at 445 nm and an impressively narrow full width at half maximum(FWHM)of 19 nm.The corresponding device exhibited outstanding performance,achieving a maximum external quantum efficiency(EQE_(max))of 32%,and Commission Internationale de L'Eclairage(CIE)coordinates of(0.14,0.06).Moreover,it delivered a remarkably high chromaticity efficiency of 367 cd/A,representing the highest value reported among LRCT/SRCT type TADF emitters.These results underscore the remarkable efficiency and color purity of DABNA-TP-Di PXZ,demonstrating the effectiveness of our molecular design strategy in advancing high-performance and high-purity deep-blue emitters.
基金the support from the Jiangsu Provincial Senior Talent Program (Dengfeng,Jiangsu University)the support from the National Key R&D Program of China (No.2024YFB3612600)+3 种基金the National Natural Science Foundation of China (Nos.22275098,62288102)Basic Research Program of Jiangsu (No.BK20243057)the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (No.NY222097)the National Natural Science Foundation of China (No.62205035)。
文摘To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62204203)。
文摘A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.
基金supported by the National Natural Science Foundation of China under Grant 62171233the Natural Science Foundation of China,Jiangsu Province under Grant BK20241891the Jiangsu Province Graduate Research and Practice Innovation Plan under Grants SJCX24_0313 and KYCX24_1169。
文摘A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
基金supported by the National Natural Science Foundation of China(Nos.62374142 and 22005255)Fundamental Research Funds for the Central Universities(Nos.20720220085 and 20720240064)+2 种基金External Cooperation Program of Fujian(No.2022I0004)Major Science and Technology Project of Xiamen in China(No.3502Z20191015)Xiamen Natural Science Foundation Youth Project(No.3502Z202471002)。
文摘Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金supported by the Natural Science Foundation of Jiangsu Province(No.BZ2022007)the National Natural Science Foundation of China(No.92261202)+1 种基金the Ministry of Science and Technology of the People’s Republic of China(No.2021YFE0114800)the Ministry of Science and Higher Education of the Russian Federation(No.075-15-2021-1027).
文摘Thermally activated delayed fluorescence(TADF)materials driven by a through-space charge transfer(TSCT)mechanism have garnered wide interest.However,access of TSCT-TADF molecules with longwavelength emission remains a formidable challenge.In this study,we introduce a novel V-type DA-D-A’emitter,Trz-mCzCbCz,by using a carborane scaffold.This design strategically incorporates carbazole(Cz)and 2,4,6-triphenyl-1,3,5-triazine(Trz)as donor and acceptor moieties,respectively.Theoretical calculations alongside experimental validations affirm the typical TSCT-TADF characteristics of this luminogen.Owing to the unique structural and electronic attributes of carboranes,Trz-mCzCbCz exhibits an orange-red emission,markedly diverging from the traditional blue-to-green emissions observed in classical Cz and Trz-based TADF molecules.Moreover,bright emission in aggregates was observed for Trz-mCzCbCz with absolute photoluminescence quantum yield(PLQY)of up to 88.8%.As such,we have successfully fabricated five organic light-emitting diodes(OLEDs)by utilizing Trz-mCzCbCz as the emitting layer.It is important to note that both the reverse intersystem crossing process and the TADF properties are profoundly influenced by host materials.The fabricated OLED devices reached a maximum external quantum efficiency(EQE)of 12.7%,with an emission peak at 592 nm.This represents the highest recorded efficiency for TSCT-TADF OLEDs employing carborane derivatives as emitting layers.
基金jointly supported by the National Natural Science Foundation of China (U21A20495)Natural Science Foundation of Jiangsu Province (BG2024023)+1 种基金National Key Research and Development Program of China (2022YFE0112000)111 Project (D17018)。
文摘Multiple quantum well(MQW) Ⅲ-nitride diodes that can simultaneously emit and detect light feature an overlapping region between their electroluminescence and responsivity spectra, which allows them to be simultaneously used as both a transmitter and a receiver in a wireless light communication system. Here, we demonstrate a mobile light communication system using a time-division multiplexing(TDM) scheme to achieve bidirectional data transmission via the same optical channel.Two identical blue MQW diodes are defined by software as a transmitter or a receiver. To address the light alignment issue, an image identification module integrated with a gimbal stabilizer is used to automatically detect the locations of moving targets;thus, underwater audio communication is realized via a mobile blue-light TDM communication mode. This approach not only uses a single link but also integrates mobile nodes in a practical network.
基金supported by a National Research Foundation of Korea(NRF)grant(No.2016R1A3B 1908249)funded by the Korean government.
文摘Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices.Furthermore,they are crucial for applications in the fields of energy,display,healthcare,and soft robotics.Conducting meshes represent a promising alternative to traditional,brittle,metal oxide conductors due to their high electrical conductivity,optical transparency,and enhanced mechanical flexibility.In this paper,we present a simple method for fabricating an ultra-transparent conducting metal oxide mesh electrode using selfcracking-assisted templates.Using this method,we produced an electrode with ultra-transparency(97.39%),high conductance(Rs=21.24Ωsq^(−1)),elevated work function(5.16 eV),and good mechanical stability.We also evaluated the effectiveness of the fabricated electrodes by integrating them into organic photovoltaics,organic light-emitting diodes,and flexible transparent memristor devices for neuromorphic computing,resulting in exceptional device performance.In addition,the unique porous structure of the vanadium-doped indium zinc oxide mesh electrodes provided excellent flexibility,rendering them a promising option for application in flexible optoelectronics.
文摘Two tetrasubstituted carbazole derivatives TBICz and TOXDCz have been designed and synthesized,which possess the twist skeletons and exhibit excellent thermal and morphological stabilities.Utilizing these novel compounds as host material,high efficiency solution-processed green phosphorescent organic light-emitting diodes(PhOLEDs)have been achieved.The high triplet energies of TBICz and TOXDCz ensure efficient energy transfer from the host to the phosphor and triplet exciton confinement on the phosphor.Solution-processable green phospho⁃rescent devices employing Ir(ppy)3 as vip and the two tetrasubstituted carbazole derivatives as hosts exhibit high ef⁃ficiencies.The best EL performance is achieved for the TBICz-based device,with a maximum current efficiency of 27.3 cd/A,a maximum power efficiency of 15.9 lm/W,and a maximum external quantum efficiency of 7.8%,which provides more host material options for solution-processed OLEDs.
文摘We have examined the theoretical implications of combining two main and three auxiliary ligands to form several Ir(Ⅲ)complexes featuring a transition metal as their core atom to identify some appropriate organic lightemitting diode(OLED)materials.By utilizing electronic structure,frontier molecular orbitals,minimum single-line absorption,triplet excited states,and emission spectral data derived from the density functional theory,the usefulness of these Ir(Ⅲ)complexes,including(piq)_(2)Ir(acac),(piq)_(2)Ir(tmd),(piq)_(2)Ir(tpip),(fpiq)_(2)Ir(acac),(fpiq)_(2)Ir(tmd),and(fpiq)_(2)Ir(tpip),in OLEDs was examined,where piq=1-phenylisoquinoline,fpiq=1-(4-fluorophenyl)isoquinoline,acac=(3Z)-4-hydroxypent-3-en-2-one,tmd=(4Z)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one,and tpip=tetraphenylimido-diphosphonate.These complexes all have low-efficiency roll-off properties,especially(fpiq)_(2)Ir(tpip).Some researchers have successfully synthesized complexes extremely similar to(piq)_(2)Ir(acac)through the Suzuki-Miyaura coupling reaction.
基金Supported by the Beijing Municipal Science&Technology Commission(Z211100004421012),the Key Reaserch and Development Pro⁃gram of China(2022YFF0605902)。
文摘In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the rapid determination of optimal embedding impedance for diodes across a specific bandwidth to achieve maximum efficiency through harmonic balance simulations.By optimizing the linear matching circuit with the optimal embedding impedance,the method effectively segregates the simulation of the linear segments from the nonlinear segments in the frequency multiplier circuit,substantially improving the speed of simulations.The design of on-chip linear matching circuits adopts a modular circuit design strategy,incorporating fixed load resistors to simplify the matching challenge.Utilizing this approach,a 340 GHz frequency doubler was developed and measured.The results demonstrate that,across a bandwidth of 330 GHz to 342 GHz,the efficiency of the doubler remains above 10%,with an input power ranging from 98 mW to 141mW and an output power exceeding 13 mW.Notably,at an input power of 141 mW,a peak output power of 21.8 mW was achieved at 334 GHz,corresponding to an efficiency of 15.8%.
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
基金supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).
文摘Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.
