MgO has been shown to facilitate the precipitation of MgO-rich crystalline phases within the MgO-CaO-Al_(2)O_(3)-SiO_(2)(MCAS)glassy inclusion system,which possesses a high liquidus temperature and a significant Young...MgO has been shown to facilitate the precipitation of MgO-rich crystalline phases within the MgO-CaO-Al_(2)O_(3)-SiO_(2)(MCAS)glassy inclusion system,which possesses a high liquidus temperature and a significant Young’s modulus.The underlying linkage between the structural evolution and the crystallization characteristics of the MCAS system was systematically investigated using molecular dynamics simulation and thermodynamic calculation.The results revealed that Mg^(2+) ions played a dual role,constructing networks through the formation of tricluster oxygens while consuming bridging oxygens(BOs)in a mechanism similar to Ca^(2+) ions.However,despite this dual role,the network connectivity was still decreased with the increase in MgO/(MgO+Al_(2)O_(3))(M/(M+A))and CaO/(CaO+SiO_(2))(C/(C+S))ratios,primarily due to the reduction in BOs.This microscopic structural evolution resulted in a reduction in viscosity and an enhancement of crystallization ability.Furthermore,the remarkable diffusion capability of Mg^(2+) ions,coupled with the increased proportion of 6-coordinated Mg^(2+)ions,unveiled the mechanism underlying the precipitation of MgSiO_(3) and Mg_(2)SiO_(4) crystals,which exhibited high Young’s moduli of 165.23 and 196.67 GPa,respectively.To prevent the precipitation of MgO-rich crystalline phases,it was crucial to maintain the M/(M+A)ratio below 0.42 and the C/(C+S)ratio below 0.16 within the MCAS system.展开更多
The high temperature (300 ～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabr icated by low-pressure chemical vapor deposition on Si (100) substrates are inv estigated.The obtained diode with...The high temperature (300 ～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabr icated by low-pressure chemical vapor deposition on Si (100) substrates are inv estigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage char acteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data meas ured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.展开更多
In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and p...In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.展开更多
The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value ...The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.展开更多
In this paper, the Sr3Y2 （BO3）4 ：Eu^3＋ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red...In this paper, the Sr3Y2 （BO3）4 ：Eu^3＋ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613 nm corresponding to the electric dipole 5^Do-7^F2 transition of Eu^3＋ under 365 nm excitation, this is because Eu^3＋ substituted for Y^3＋ occupied the non-centrosymmetric position in the crystal structure of Sr3Y2（BO3）4. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet （254 nm, 365 nm and 400 nm） and blue （470 nm） light. The effect of Eu^3＋ concentration on the red emission of Sr3Y2（BO3）4 ：Eu^3＋ was measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The Commission Internationale del＇Eclairage chromaticity （x, y） of Sr3Y2（BO3）4 ：Eu^3＋ phosphor is （0.640, 0.355） at 15 mol% Eu^3＋.展开更多
With andromonoecious<i><span> Momordica charantia </span></i><span>L.</span><span> </span><span>(bitter gourd) as material, three light qualities</span><s...With andromonoecious<i><span> Momordica charantia </span></i><span>L.</span><span> </span><span>(bitter gourd) as material, three light qualities</span><span> </span><span>(50 μmol·m</span><sup><span style="vertical-align:super;">-2</span></sup><span>·s</span><sup><span style="vertical-align:super;">-1</span></sup><span>) including white LED light</span><span> </span><span>(WL), blue monochromatic light (B,</span><span> </span><span>465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the </span><span>stomata</span><span>l conductance (GS) of leaves, significantly improved the net photosynthetic rate</span><span> </span><span>(Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (P</span><sub><span style="vertical-align:sub;">max</span></sub><span>),</span><span> </span><span>apparent quantum efficiency</span><span> </span><span>(AQE) and light saturation point</span><span> </span><span>(LSP), and reduced the dark respiration rate (Rd) and light compensation point</span><span> </span><span>(LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that </span><i><span>Momordica charantia</span></i><span> is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.</span>展开更多
This paper establishes a model of a nonlinear diode refrigerator consisting of two diodes switched in the opposite directions and located in two heat reservoirs with different temperatures. Based on the theory of ther...This paper establishes a model of a nonlinear diode refrigerator consisting of two diodes switched in the opposite directions and located in two heat reservoirs with different temperatures. Based on the theory of thermal fluctuations, the expressions of the heat flux absorbed from the heat reservoirs are derived. After the heat leak between the two reservoirs is considered, the cooling rate and the coefficient of performance are obtained analytically. The influence of the heat leak and the temperature ratio on the performance characteristics of the refrigerator is analysed in detail.展开更多
The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on ...The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.展开更多
In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
The dissolved gas analysis is one of the most effective and convenient methods to diagnose the early discharge faults of transformers,the fault involves the solid insulation.oil—paper insulation cracks and releases c...The dissolved gas analysis is one of the most effective and convenient methods to diagnose the early discharge faults of transformers,the fault involves the solid insulation.oil—paper insulation cracks and releases carbon monoxide(co)gas.Therefore,the detection of CO can forecast the potentia1 inner faults of oil.filled transformers.展开更多
Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at roo...Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510（C） network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.展开更多
Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the ...Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (I<sub>s</sub>), the ideality factor (n), the series and the shunt resistances (R<sub>s</sub> and R<sub>sh</sub>), the effective and the zero bias barrier heights (Φ<sub>B</sub> and Φ<sub>B0</sub>), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (V<sub>bi</sub>), together with the semiconductor doping concentration (N<sub>A</sub> or N<sub>D</sub>). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on Φ<sub>B</sub>, ΦB0</sub>, n and N<sub>A</sub> or N<sub>D</sub> parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.展开更多
Since the first discovery of gold deposits on the northeastern margin of the Jiaolai Basin in Shandong Province at the end of the 20^(th) century,seven medium-sized to large/super-large gold deposits have been identif...Since the first discovery of gold deposits on the northeastern margin of the Jiaolai Basin in Shandong Province at the end of the 20^(th) century,seven medium-sized to large/super-large gold deposits have been identified in this region,with cumulative proven gold resources of 223 t.This study reviewed the metallogenic and geochemical characteristics of various gold deposits in this region,examined the sources of their ore-forming fluids and materials,as well as their gold metallogenic epochs and processes,and developed a gold metallogenic model.The gold deposits in this region are governed by both dense fractures and detachment structural systems along basin margins,primarily categorized into the altered rock type and the pyrite-bearing carbonate vein type.The latter type,a recently discovered mineralization type in the Jiaodong Peninsula,enjoys high gold grade,a large scale,and high gold mineral fineness,suggesting considerable prospecting potential.Both types of gold deposits show metallogenic epochs ranging from 116 Ma to 119 Ma.Their ore-forming fluids are identified as a CO_(2)-NaCl-H_(2)O fluid system characterized by moderate to low temperatures,moderate to low salinity,and low density,with the pyrite-bearing carbonate vein-type gold deposits manifesting slightly higher salinity.The C-H-O,S,and Pb isotopes of hydrothermal minerals reveal that the ore-forming fluids and materials are characteristic of crust-mantle mixing.Specifically,they were derived from mantle fluids in the early stages,mixed with stratum water and meteoric water in the later stages for mineralization.The gold metallogenic process is identified as follows:During the Early Cretaceous,the subduction of the Pacific Plate and the destruction of the North China Craton led to asthenospheric upwelling.The resulting fluids,after metasomatizing the enriched mantle,differentiated and evolved into C-H-O ore-bearing fluids,which were then mixed with crustal fluids.The mixed fluids migrated to the shallow crust,where they mingled with stratum water and meteoric water.Then,the fluids underwent unloading and final mineralization in detachment fault tectonic systems on basin margins.Due to differences in mixed crustal materials or the surrounding rocks involved in water-rock interactions,altered rock-and pyrite-bearing carbonate vein-type gold deposits were formed in acidic and alkaline fluid environments,respectively.展开更多
In order to reflect the influence of the drivers＇ characteristic differences on intersection capacity under a mixed traffic flow, a driver correction coefficient for the intersection capacity calculation according to...In order to reflect the influence of the drivers＇ characteristic differences on intersection capacity under a mixed traffic flow, a driver correction coefficient for the intersection capacity calculation according to the driver＇s visual characteristics is proposed. First, the parameters of the driver＇s visual characteristics at some real roads, including gaze fixation distribution, mean fixation duration, visual angle distribution and some other parameters at intersections, are collected. Then, the relationship between the traffic flow rate at intersections and the parameters of driver eye movements are established. The analytical results indicate that when the traffic flow is unsaturated, the parameters of driver eye movements change relatively little; however, when the traffic flow is saturated, the parameters of driver eye movements change drastically. Finally, the saturation-flow-rate model is modified according to the parameters of driver eye movements; thus, a capacity model of intersections considering the driver＇s visual characteristics is obtained.展开更多
A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a ...A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.展开更多
After analysis of location feature of the south of lower reaches of Yangtze River and its construction of urban and rural integration,the paper pointed out harmonious combination between natural and artificial factors...After analysis of location feature of the south of lower reaches of Yangtze River and its construction of urban and rural integration,the paper pointed out harmonious combination between natural and artificial factors had been neglected in planning and design of farmers' residential area at the south of lower reaches of Yangtze River,"regional characteristic" losing,residential area in the form of "city community" and buildings in European style.In view of these problems,relevant planning and design thoughts and methods had been proposed as to how to create "regional characteristic" from the perspective of planning,architecture and landscape design.It discussed with emphasis the importance of construction base type and combination of environment with residential area construction;inspirations and design methods obtained from traditional architectures;and the content of landscape overall planning and specific design.It was hoped to enlighten designers to shoulder social and historical responsibility,make exploration unremittingly,and construct beautiful homelands for people.展开更多
The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a conti...The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.展开更多
Bennett's linkage is a spatial fourlink linkage,and has an extensive application prospect in the deployable linkages.Its kinematic and dynamic characteristics analysis has a great significance in its synthesis and...Bennett's linkage is a spatial fourlink linkage,and has an extensive application prospect in the deployable linkages.Its kinematic and dynamic characteristics analysis has a great significance in its synthesis and application. According to the geometrical conditions of Bennett 's linkage,the motion equations are established,and the expressions of angular displacement,angular velocity and angular acceleration of the followers and the displacement,velocity and acceleration of mass center of link are shown. Based on Lagrange's equation,the multi-rigid-body dynamic model of Bennett's linkage is established. In order to solve the reaction forces and moments of joint,screw theory and reciprocal screw method are combined to establish the computing method.The number of equations and unknown reaction forces and moments of joint are equal through adding link deformation equations. The influence of the included angle of adjacent axes on Bennett 's linkage 's kinematic characteristics,the dynamic characteristics and the reaction forces and moments of joint are analyzed.Results show that the included angle of adjacent axes has a great effect on velocity,acceleration,the reaction forces and moments of Bennett's linkage. The change of reaction forces and moments of joint are apparent near the singularity configuration.展开更多
基金support from the National Key R&D Program of China(Grant Nos.2023YFB3709900 and 2023YFB3709903)the National Natural Science Foundation of China(Grant Nos.52174293 and U22A20171)+1 种基金the High Steel Center(HSC)at North China University of TechnologyUniversity of Science and Technology Beijing(USTB).
文摘MgO has been shown to facilitate the precipitation of MgO-rich crystalline phases within the MgO-CaO-Al_(2)O_(3)-SiO_(2)(MCAS)glassy inclusion system,which possesses a high liquidus temperature and a significant Young’s modulus.The underlying linkage between the structural evolution and the crystallization characteristics of the MCAS system was systematically investigated using molecular dynamics simulation and thermodynamic calculation.The results revealed that Mg^(2+) ions played a dual role,constructing networks through the formation of tricluster oxygens while consuming bridging oxygens(BOs)in a mechanism similar to Ca^(2+) ions.However,despite this dual role,the network connectivity was still decreased with the increase in MgO/(MgO+Al_(2)O_(3))(M/(M+A))and CaO/(CaO+SiO_(2))(C/(C+S))ratios,primarily due to the reduction in BOs.This microscopic structural evolution resulted in a reduction in viscosity and an enhancement of crystallization ability.Furthermore,the remarkable diffusion capability of Mg^(2+) ions,coupled with the increased proportion of 6-coordinated Mg^(2+)ions,unveiled the mechanism underlying the precipitation of MgSiO_(3) and Mg_(2)SiO_(4) crystals,which exhibited high Young’s moduli of 165.23 and 196.67 GPa,respectively.To prevent the precipitation of MgO-rich crystalline phases,it was crucial to maintain the M/(M+A)ratio below 0.42 and the C/(C+S)ratio below 0.16 within the MCAS system.
文摘The high temperature (300 ～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabr icated by low-pressure chemical vapor deposition on Si (100) substrates are inv estigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage char acteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data meas ured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.
基金Project supported by the National Natural Science Foundation of China(Grant No.11002013201102)the National Key Technology R & D Program of China(Grant No.2011BAE01B14)
文摘In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61006060)the 13115 Innovation Engineering of Shaanxi, China (Grant No. 2008ZDKG-30)the Key Laboratory Fund of Ministry of Education, China (Grant No. JY0100112501)
文摘The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.
基金supported by Hebei Provincial Technology Development Foundation of China (Grant No 51215103b)Science Foundation of Hebei University, China (Grant No 2006Q06)
文摘In this paper, the Sr3Y2 （BO3）4 ：Eu^3＋ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613 nm corresponding to the electric dipole 5^Do-7^F2 transition of Eu^3＋ under 365 nm excitation, this is because Eu^3＋ substituted for Y^3＋ occupied the non-centrosymmetric position in the crystal structure of Sr3Y2（BO3）4. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet （254 nm, 365 nm and 400 nm） and blue （470 nm） light. The effect of Eu^3＋ concentration on the red emission of Sr3Y2（BO3）4 ：Eu^3＋ was measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The Commission Internationale del＇Eclairage chromaticity （x, y） of Sr3Y2（BO3）4 ：Eu^3＋ phosphor is （0.640, 0.355） at 15 mol% Eu^3＋.
文摘With andromonoecious<i><span> Momordica charantia </span></i><span>L.</span><span> </span><span>(bitter gourd) as material, three light qualities</span><span> </span><span>(50 μmol·m</span><sup><span style="vertical-align:super;">-2</span></sup><span>·s</span><sup><span style="vertical-align:super;">-1</span></sup><span>) including white LED light</span><span> </span><span>(WL), blue monochromatic light (B,</span><span> </span><span>465 nm), and red monochromatic light (R, 650 nm) were carried out to investigate their effects on seed germination, physiological and biochemical parameters, sex differentiation and photosynthetic characteristics of bitter gourd. The results showed that compared to the WL treatment, the R treatment significantly promoted seed germination, seedling height elongation and soluble sugar content, the B treatment significantly increased seedling stem diameter, reducing sugar content and soluble protein content, the R and B treatments both significantly reduced sucrose content, but their POD activity showed no significant difference. Compared with the R treatment, the B treatment significantly increased the total female flower number and female flower nod ratio in 30 nods of main stems. The study of photosynthetic characteristics found that the R and B treatments could effectively increase the </span><span>stomata</span><span>l conductance (GS) of leaves, significantly improved the net photosynthetic rate</span><span> </span><span>(Pn) compared to the WL treatment, and the effect of the B treatment was better. Compared to the R and WL treatments, the B treatment increased the maximum photosynthetic rate (P</span><sub><span style="vertical-align:sub;">max</span></sub><span>),</span><span> </span><span>apparent quantum efficiency</span><span> </span><span>(AQE) and light saturation point</span><span> </span><span>(LSP), and reduced the dark respiration rate (Rd) and light compensation point</span><span> </span><span>(LCP) of the leaves. Fit light response curves showed that the adaptability and utilization of weak light in bitter gourd were middle or below, but it showed higher adaptability and utilization of strong light. Thus, it suggests that </span><i><span>Momordica charantia</span></i><span> is a typical sun plan with lower Rd. In summary, it is concluded that blue light has a positive effect on the seed germination, seedling growth, sex differentiation and improving the photosynthetic performance, and this will lay the foundation for artificially regulating optimum photosynthesis using specific LEDs wavelength, and help to elucidate the relationship how light quality influences the sex differentiation of plant.</span>
基金Project supported by the National Natural Science Foundation of China （Grant Nos. 10765004 and 11065008）.
文摘This paper establishes a model of a nonlinear diode refrigerator consisting of two diodes switched in the opposite directions and located in two heat reservoirs with different temperatures. Based on the theory of thermal fluctuations, the expressions of the heat flux absorbed from the heat reservoirs are derived. After the heat leak between the two reservoirs is considered, the cooling rate and the coefficient of performance are obtained analytically. The influence of the heat leak and the temperature ratio on the performance characteristics of the refrigerator is analysed in detail.
基金Supported by the National Key Research and Development Plan under Grant No 2017YFB0403000the Fundamental Research Funds for the Central Universities under Grant No JB181110
文摘The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
文摘The dissolved gas analysis is one of the most effective and convenient methods to diagnose the early discharge faults of transformers,the fault involves the solid insulation.oil—paper insulation cracks and releases carbon monoxide(co)gas.Therefore,the detection of CO can forecast the potentia1 inner faults of oil.filled transformers.
基金SUPPORTED BY NATIONAL NATURAL SCIENCE FOUNDATION OF CHINA( NO. 60177010).
文摘Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510（C） network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.
文摘Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (I<sub>s</sub>), the ideality factor (n), the series and the shunt resistances (R<sub>s</sub> and R<sub>sh</sub>), the effective and the zero bias barrier heights (Φ<sub>B</sub> and Φ<sub>B0</sub>), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (V<sub>bi</sub>), together with the semiconductor doping concentration (N<sub>A</sub> or N<sub>D</sub>). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on Φ<sub>B</sub>, ΦB0</sub>, n and N<sub>A</sub> or N<sub>D</sub> parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.
基金supported by the Program of the National Natural Science Foundation of China(Nos.41973048,U2006201)the Open Project of State Key Laboratory of Geological Processes and Mineral Resources(No.GPMR202203)+1 种基金the Key R&D Program of Shandong Province(No.2023CXGC011001),the Taishan Scholars.Program(tstp20240847)the Open Project of Shandong Engineering Research Center of Application and Development of Big Data for Deep Gold Exploration(No.SDK202207)。
文摘Since the first discovery of gold deposits on the northeastern margin of the Jiaolai Basin in Shandong Province at the end of the 20^(th) century,seven medium-sized to large/super-large gold deposits have been identified in this region,with cumulative proven gold resources of 223 t.This study reviewed the metallogenic and geochemical characteristics of various gold deposits in this region,examined the sources of their ore-forming fluids and materials,as well as their gold metallogenic epochs and processes,and developed a gold metallogenic model.The gold deposits in this region are governed by both dense fractures and detachment structural systems along basin margins,primarily categorized into the altered rock type and the pyrite-bearing carbonate vein type.The latter type,a recently discovered mineralization type in the Jiaodong Peninsula,enjoys high gold grade,a large scale,and high gold mineral fineness,suggesting considerable prospecting potential.Both types of gold deposits show metallogenic epochs ranging from 116 Ma to 119 Ma.Their ore-forming fluids are identified as a CO_(2)-NaCl-H_(2)O fluid system characterized by moderate to low temperatures,moderate to low salinity,and low density,with the pyrite-bearing carbonate vein-type gold deposits manifesting slightly higher salinity.The C-H-O,S,and Pb isotopes of hydrothermal minerals reveal that the ore-forming fluids and materials are characteristic of crust-mantle mixing.Specifically,they were derived from mantle fluids in the early stages,mixed with stratum water and meteoric water in the later stages for mineralization.The gold metallogenic process is identified as follows:During the Early Cretaceous,the subduction of the Pacific Plate and the destruction of the North China Craton led to asthenospheric upwelling.The resulting fluids,after metasomatizing the enriched mantle,differentiated and evolved into C-H-O ore-bearing fluids,which were then mixed with crustal fluids.The mixed fluids migrated to the shallow crust,where they mingled with stratum water and meteoric water.Then,the fluids underwent unloading and final mineralization in detachment fault tectonic systems on basin margins.Due to differences in mixed crustal materials or the surrounding rocks involved in water-rock interactions,altered rock-and pyrite-bearing carbonate vein-type gold deposits were formed in acidic and alkaline fluid environments,respectively.
基金The National Natural Science Foundation of China (No.50708019)Huo Yingdong Education Foundation(No.104010)Jiangsu Qing Lan Project
文摘In order to reflect the influence of the drivers＇ characteristic differences on intersection capacity under a mixed traffic flow, a driver correction coefficient for the intersection capacity calculation according to the driver＇s visual characteristics is proposed. First, the parameters of the driver＇s visual characteristics at some real roads, including gaze fixation distribution, mean fixation duration, visual angle distribution and some other parameters at intersections, are collected. Then, the relationship between the traffic flow rate at intersections and the parameters of driver eye movements are established. The analytical results indicate that when the traffic flow is unsaturated, the parameters of driver eye movements change relatively little; however, when the traffic flow is saturated, the parameters of driver eye movements change drastically. Finally, the saturation-flow-rate model is modified according to the parameters of driver eye movements; thus, a capacity model of intersections considering the driver＇s visual characteristics is obtained.
文摘A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
文摘After analysis of location feature of the south of lower reaches of Yangtze River and its construction of urban and rural integration,the paper pointed out harmonious combination between natural and artificial factors had been neglected in planning and design of farmers' residential area at the south of lower reaches of Yangtze River,"regional characteristic" losing,residential area in the form of "city community" and buildings in European style.In view of these problems,relevant planning and design thoughts and methods had been proposed as to how to create "regional characteristic" from the perspective of planning,architecture and landscape design.It discussed with emphasis the importance of construction base type and combination of environment with residential area construction;inspirations and design methods obtained from traditional architectures;and the content of landscape overall planning and specific design.It was hoped to enlighten designers to shoulder social and historical responsibility,make exploration unremittingly,and construct beautiful homelands for people.
基金supported by the National Natural Science Foundation of China(Nos.61534005,11475025 and 11375029)
文摘The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.
基金Sponsored by the National Natural Science Foundation of China(Grant No.51175422)
文摘Bennett's linkage is a spatial fourlink linkage,and has an extensive application prospect in the deployable linkages.Its kinematic and dynamic characteristics analysis has a great significance in its synthesis and application. According to the geometrical conditions of Bennett 's linkage,the motion equations are established,and the expressions of angular displacement,angular velocity and angular acceleration of the followers and the displacement,velocity and acceleration of mass center of link are shown. Based on Lagrange's equation,the multi-rigid-body dynamic model of Bennett's linkage is established. In order to solve the reaction forces and moments of joint,screw theory and reciprocal screw method are combined to establish the computing method.The number of equations and unknown reaction forces and moments of joint are equal through adding link deformation equations. The influence of the included angle of adjacent axes on Bennett 's linkage 's kinematic characteristics,the dynamic characteristics and the reaction forces and moments of joint are analyzed.Results show that the included angle of adjacent axes has a great effect on velocity,acceleration,the reaction forces and moments of Bennett's linkage. The change of reaction forces and moments of joint are apparent near the singularity configuration.
