AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layer...AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layers(EBLs).To overcome these limitations,we propose an EBL-free DUV LD design incor-porating a 1-nm undoped Al_(0.8)Ga_(0.2)N thin strip layer after the last quantum barrier.Using PICS3D simula-tions,we evaluate the optical and electrical characteristics.Results show a significant increase in effective electron barrier height(from 158.2 meV to 420.7 meV)and a reduction in hole barrier height(from 149.2 meV to 62.8 meV),which enhance hole injection and reduce electron leakage.The optimized structure(LD3)achieves a 14%increase in output power,improved slope efficiency(1.85 W/A),and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions,im-proving recombination efficiency.展开更多
The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution an...The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.展开更多
Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunne...Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.展开更多
Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of e...Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.展开更多
Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes(LEDs)due to their narrow emission linewidths,high photoluminescence quantum yields,a...Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes(LEDs)due to their narrow emission linewidths,high photoluminescence quantum yields,and tunable emission wavelengths.Achieving high-performance perovskite LEDs(Pe LEDs)requires the emissive layer to possess efficient radiative recombination,low defect density,minimal ion mobility,and effective carrier confinement.Perovskite/perovskite heterostructure(PPHS)offers a compelling approach for engineering emissive layers with these desired attributes,owing to their ability to passivate surface defects,tailor bandgaps,and suppress ion migration.Pe LEDs based on PPHS have demonstrated superior performance compared to single-phase devices,particularly in terms of external quantum efficiency and operational stability.This review provides a comprehensive overview of the typical PPHS architectures applied in Pe LEDs,including vertical,lateral,and bulk configurations.We discuss representative fabrication strategies and the associated optoelectronic properties of these heterostructures,highlighting the mechanisms by which they enhance device efficiency and stability.Finally,we explore the remaining challenges and prospects for the application of PPHS in Pe LEDs and other luminescent technologies.展开更多
Owing to the exceptional optoelectronic properties,metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies,providing perovskite light-emitting diodes(Pe LEDs)g...Owing to the exceptional optoelectronic properties,metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies,providing perovskite light-emitting diodes(Pe LEDs)great potential for high-quality color displays with a wide color gamut and pure color emission.Although laboratory-scale Pe LEDs have achieved neartheoretical efficiencies,challenges such as achieving uniform large-area films,improving material stability,and enhancing patterning precision remain barriers to commercialization.This review presents a systematic analysis of scalable manufacturing and precision patterning strategies for Pe LEDs,focusing on their applications in large-area lighting and full-color displays.Fabrication methods are categorized into film deposition techniques(spin-coating,blade-coating,and thermal evaporation)and patterning strategies,including top-down(photolithography,laser/e-beam lithography,and nanoimprinting)and bottom-up(patterned crystal growth,inkjet printing,and electrohydrodynamic jet printing)approaches.In this review,we discuss the advantages and limitations of each strategy,highlight current challenges,and outlook possible pathways towards scalable,high-performance Pe LEDs for advanced optoelectronic applications.展开更多
This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidew...This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.展开更多
Electrodeposited organic light-emitting diode(OLED)technology requires a spin-coating-free hole-injection layer that simultaneously provides smooth surface morphology,stable energy levels,and compatibility with high-r...Electrodeposited organic light-emitting diode(OLED)technology requires a spin-coating-free hole-injection layer that simultaneously provides smooth surface morphology,stable energy levels,and compatibility with high-resolution pixel architectures.In this study,electropolymerization of 3,4-ethylenedioxythiophene(EDOT)in poly(styrene sulfonate)(PSS-)surfactant-solubilized colloidal media is shown to afford poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)films with robust surface uniformity and stable energy levels suitable for application as hole-injection layers in OLEDs.Systematic investigation reveals that the hole-injection properties of these films are governed primarily by the colloidal chemistry of EDOT/PSS-surfactant-solubilized systems,rather than by conventional electrochemical parameters.This colloidal regulation modulates the film work function over a practically useful range.Incorporation of optimized films into OLEDs leads to enhanced hole injection and improved device performance,with external quantum efficiency increasing from 2.2%to 7.4%and minimal roll-off.Overall,this work demonstrates a feasible example of realizing spin-coating-free hole-injection layers,offering a potential direction for the development of electrodeposited injection layers for OLEDs.展开更多
To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polym...To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.展开更多
Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LED...Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.展开更多
There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel ...This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel fast-axis collimated blue semiconductor laser as the pump source,combined with a folded cavity and innovation coating technology,and utilizing a Brewster-cut BBO crystal for intracavity frequency doubling,TEM00 mode deep UV laser radiation at 275 nm with an output power of 351 mW is obtained.This marks the first report of achieving 275 nm laser generation based on Pr:LiYF4 to date.展开更多
The packaging quality of coaxial laser diodes(CLDs)plays a pivotal role in determining their optical performance and long-term reliability.As the core packaging process,high-precision laser welding requires precise co...The packaging quality of coaxial laser diodes(CLDs)plays a pivotal role in determining their optical performance and long-term reliability.As the core packaging process,high-precision laser welding requires precise control of process parameters to suppress optical power loss.However,the complex nonlinear relationship between welding parameters and optical power loss renders traditional trial-and-error methods inefficient and imprecise.To address this challenge,a physics-informed(PI)and data-driven collaboration approach for welding parameter optimization is proposed.First,thermal-fluid-solid coupling finite element method(FEM)was employed to quantify the sensitivity of welding parameters to physical characteristics,including residual stress.This analysis facilitated the identification of critical factors contributing to optical power loss.Subsequently,a Gaussian process regression(GPR)model incorporating finite element simulation prior knowledge was constructed based on the selected features.By introducing physics-informed kernel(PIK)functions,stress distribution patterns were embedded into the prediction model,achieving high-precision optical power loss prediction.Finally,a Bayesian optimization(BO)algorithm with an adaptive sampling strategy was implemented for efficient parameter space exploration.Experimental results demonstrate that the proposedmethod effectively establishes explicit physical correlations between welding parameters and optical power loss.The optimized welding parameters reduced optical power loss by 34.1%,providing theoretical guidance and technical support for reliable CLD packaging.展开更多
A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The em...A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.展开更多
Moisture measurement is of great needs in semiconductor industry, combustion diagnosis, meteorology, and atmospheric studies. We present an optical hygrometer based on cavity ring-down spectroscopy （CRDS）. By using ...Moisture measurement is of great needs in semiconductor industry, combustion diagnosis, meteorology, and atmospheric studies. We present an optical hygrometer based on cavity ring-down spectroscopy （CRDS）. By using different absorption lines of H20 in the 1.56 and 1.36 gm regions, we are able to determine the relative concentration （mole fraction） of water vapor from a few percent down to the 10-12 level. The quantitative accuracy is examined by comparing the CRDS hygrometer with a commercial chilled-mirror dew-point meter. The high sensitivity of the CRDS instrument allows a water detection limit of 8 pptv.展开更多
The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the A...The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.展开更多
The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature ...The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.展开更多
Diode pumped monolithic nonplanar ring laser has been developed, yielding single frequency laser and has the advantages of compactness, reliability and high efficiency. Its principles are given in detail and a monolit...Diode pumped monolithic nonplanar ring laser has been developed, yielding single frequency laser and has the advantages of compactness, reliability and high efficiency. Its principles are given in detail and a monolithic nonplanar ring laser is designed. As a result, a laser of hundreds milliwatts cw single frequency output was built up, placed in a magnetic field and pumped by LD. The optical conversion efficiency was more than 15% and the slope efficiency more than 30%. The laser beam had a good quality, with M 2 about 1 2.展开更多
Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the...Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.展开更多
A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The ...A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
文摘AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layers(EBLs).To overcome these limitations,we propose an EBL-free DUV LD design incor-porating a 1-nm undoped Al_(0.8)Ga_(0.2)N thin strip layer after the last quantum barrier.Using PICS3D simula-tions,we evaluate the optical and electrical characteristics.Results show a significant increase in effective electron barrier height(from 158.2 meV to 420.7 meV)and a reduction in hole barrier height(from 149.2 meV to 62.8 meV),which enhance hole injection and reduce electron leakage.The optimized structure(LD3)achieves a 14%increase in output power,improved slope efficiency(1.85 W/A),and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions,im-proving recombination efficiency.
基金supported by the National Natural Science Foundation of China(Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140)Tianshan Innovation Team Program(Grant No.2022TSYCTD0005)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0880000)Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant Nos.2023124,Y2023032)。
文摘The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.
基金National Key Research and Development Program of China(2024YFA1410700,2021YFA1200700)National Natural Science Foundation of China(62474065,T2222025,62174053)+3 种基金Natural Science Foundation of Chongqing(CSTB2024NSCQ-JQX0005)Shanghai Science and Technology Innovation Action Plan(24QA2702300,24YF2710400)National Postdoctoral Program(GZB20240225)Fundamental Research Funds for the Central Universities。
文摘Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.
基金supported by the National Key R&D Program of China (Grant No.2023YFA1406400)the National Natural Science Foundation of China (Grant Nos.12534005 and 12325402)。
文摘Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.
基金supported by the Advanced Talents Incubation Program of Hebei University(No.521100224235)the National Natural Science Foundation of China(No.52503363)the Natural Science Foundation of Hebei Province(No.E2025201009)。
文摘Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes(LEDs)due to their narrow emission linewidths,high photoluminescence quantum yields,and tunable emission wavelengths.Achieving high-performance perovskite LEDs(Pe LEDs)requires the emissive layer to possess efficient radiative recombination,low defect density,minimal ion mobility,and effective carrier confinement.Perovskite/perovskite heterostructure(PPHS)offers a compelling approach for engineering emissive layers with these desired attributes,owing to their ability to passivate surface defects,tailor bandgaps,and suppress ion migration.Pe LEDs based on PPHS have demonstrated superior performance compared to single-phase devices,particularly in terms of external quantum efficiency and operational stability.This review provides a comprehensive overview of the typical PPHS architectures applied in Pe LEDs,including vertical,lateral,and bulk configurations.We discuss representative fabrication strategies and the associated optoelectronic properties of these heterostructures,highlighting the mechanisms by which they enhance device efficiency and stability.Finally,we explore the remaining challenges and prospects for the application of PPHS in Pe LEDs and other luminescent technologies.
基金supported by 14th Five-Year Plan Key R&D Plan,Ministry of Science and Technology of the People’s Republic of China,2024YFB3409002National Natural Science Foundation of China,12302142+4 种基金HKUSTHKUST(GZ)Collaborative Research Scheme,G035Yangcheng Scholars Research Project-Leading Talent Training Project,2024312156Guangzhou-HKUST(GZ)Joint Funding Scheme,2023A03J0157Guangzhou Basic and Applied Basic Research Project,2024A04J4765Shenzhen Basic Research Project,JCYJ20220530114417040。
文摘Owing to the exceptional optoelectronic properties,metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies,providing perovskite light-emitting diodes(Pe LEDs)great potential for high-quality color displays with a wide color gamut and pure color emission.Although laboratory-scale Pe LEDs have achieved neartheoretical efficiencies,challenges such as achieving uniform large-area films,improving material stability,and enhancing patterning precision remain barriers to commercialization.This review presents a systematic analysis of scalable manufacturing and precision patterning strategies for Pe LEDs,focusing on their applications in large-area lighting and full-color displays.Fabrication methods are categorized into film deposition techniques(spin-coating,blade-coating,and thermal evaporation)and patterning strategies,including top-down(photolithography,laser/e-beam lithography,and nanoimprinting)and bottom-up(patterned crystal growth,inkjet printing,and electrohydrodynamic jet printing)approaches.In this review,we discuss the advantages and limitations of each strategy,highlight current challenges,and outlook possible pathways towards scalable,high-performance Pe LEDs for advanced optoelectronic applications.
基金supported in part by the National Key Research and Development Program of China(Grant No.2021YFC2203400)Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008)+1 种基金Jiangxi Province Double Thousand Plan (Grant No. S2019CQKJ2638)in part the National Natural Science Foundation of China(Grant Nos.62074053).
文摘This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.
基金supported by the National Key R&D Program of China(No.2020YFA0714604)the Fund of Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates(No.2023B1212060003)+1 种基金the SSL Sci-tech Commissioner Program(No.20234383-01KCJ-G)the National Natural Science Foundation of China(No.92463310)。
文摘Electrodeposited organic light-emitting diode(OLED)technology requires a spin-coating-free hole-injection layer that simultaneously provides smooth surface morphology,stable energy levels,and compatibility with high-resolution pixel architectures.In this study,electropolymerization of 3,4-ethylenedioxythiophene(EDOT)in poly(styrene sulfonate)(PSS-)surfactant-solubilized colloidal media is shown to afford poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)films with robust surface uniformity and stable energy levels suitable for application as hole-injection layers in OLEDs.Systematic investigation reveals that the hole-injection properties of these films are governed primarily by the colloidal chemistry of EDOT/PSS-surfactant-solubilized systems,rather than by conventional electrochemical parameters.This colloidal regulation modulates the film work function over a practically useful range.Incorporation of optimized films into OLEDs leads to enhanced hole injection and improved device performance,with external quantum efficiency increasing from 2.2%to 7.4%and minimal roll-off.Overall,this work demonstrates a feasible example of realizing spin-coating-free hole-injection layers,offering a potential direction for the development of electrodeposited injection layers for OLEDs.
基金the support from the Jiangsu Provincial Senior Talent Program (Dengfeng,Jiangsu University)the support from the National Key R&D Program of China (No.2024YFB3612600)+3 种基金the National Natural Science Foundation of China (Nos.22275098,62288102)Basic Research Program of Jiangsu (No.BK20243057)the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (No.NY222097)the National Natural Science Foundation of China (No.62205035)。
文摘To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.
基金supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).
文摘Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
文摘This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel fast-axis collimated blue semiconductor laser as the pump source,combined with a folded cavity and innovation coating technology,and utilizing a Brewster-cut BBO crystal for intracavity frequency doubling,TEM00 mode deep UV laser radiation at 275 nm with an output power of 351 mW is obtained.This marks the first report of achieving 275 nm laser generation based on Pr:LiYF4 to date.
基金funded by the National Key R&D Program of China,Grant No.2024YFF0504904.
文摘The packaging quality of coaxial laser diodes(CLDs)plays a pivotal role in determining their optical performance and long-term reliability.As the core packaging process,high-precision laser welding requires precise control of process parameters to suppress optical power loss.However,the complex nonlinear relationship between welding parameters and optical power loss renders traditional trial-and-error methods inefficient and imprecise.To address this challenge,a physics-informed(PI)and data-driven collaboration approach for welding parameter optimization is proposed.First,thermal-fluid-solid coupling finite element method(FEM)was employed to quantify the sensitivity of welding parameters to physical characteristics,including residual stress.This analysis facilitated the identification of critical factors contributing to optical power loss.Subsequently,a Gaussian process regression(GPR)model incorporating finite element simulation prior knowledge was constructed based on the selected features.By introducing physics-informed kernel(PIK)functions,stress distribution patterns were embedded into the prediction model,achieving high-precision optical power loss prediction.Finally,a Bayesian optimization(BO)algorithm with an adaptive sampling strategy was implemented for efficient parameter space exploration.Experimental results demonstrate that the proposedmethod effectively establishes explicit physical correlations between welding parameters and optical power loss.The optimized welding parameters reduced optical power loss by 34.1%,providing theoretical guidance and technical support for reliable CLD packaging.
文摘A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.
基金This work was supported by the National Basic Research Program of China （No.2013BAK12B00 and No.2013CB834602） and the National Natural Science Foundation of China （No.21225314 and No.21427804）.
文摘Moisture measurement is of great needs in semiconductor industry, combustion diagnosis, meteorology, and atmospheric studies. We present an optical hygrometer based on cavity ring-down spectroscopy （CRDS）. By using different absorption lines of H20 in the 1.56 and 1.36 gm regions, we are able to determine the relative concentration （mole fraction） of water vapor from a few percent down to the 10-12 level. The quantitative accuracy is examined by comparing the CRDS hygrometer with a commercial chilled-mirror dew-point meter. The high sensitivity of the CRDS instrument allows a water detection limit of 8 pptv.
文摘The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.
文摘The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.
基金Fundfor Research on Doctoral Programs in Institutions of Higher Learning
文摘Diode pumped monolithic nonplanar ring laser has been developed, yielding single frequency laser and has the advantages of compactness, reliability and high efficiency. Its principles are given in detail and a monolithic nonplanar ring laser is designed. As a result, a laser of hundreds milliwatts cw single frequency output was built up, placed in a magnetic field and pumped by LD. The optical conversion efficiency was more than 15% and the slope efficiency more than 30%. The laser beam had a good quality, with M 2 about 1 2.
文摘Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.
文摘A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
