Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunne...Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
With the rapid development of large-scale offshore wind farms,efficient and reliable power transmission systems are urgently needed.Hybrid high-voltage direct current(HVDC)configurations combining a diode rectifier un...With the rapid development of large-scale offshore wind farms,efficient and reliable power transmission systems are urgently needed.Hybrid high-voltage direct current(HVDC)configurations combining a diode rectifier unit(DRU)and a modular multilevel converter(MMC)have emerged as a promising solution,offering advantages in cost-effectiveness and control capability.However,the uncontrollable nature of the DRU poses significant challenges for systemstability under offshore AC fault conditions,particularly due to its inability to provide fault current or voltage support.This paper investigates the offshore AC fault characteristics and fault ride-through(FRT)strategy of a hybrid offshore wind power transmission system based on a diode rectifier unit DRU and MMC.First,the dynamic response of the hybrid system under offshore symmetrical three-phase faults is analyzed.It is demonstrated that due to the unidirectional conduction nature of the DRU,its AC current rapidly drops to zero during faults,and the fault current is solely contributed by the wind turbine generators(WTGs)and wind farm MMC(WFMMC).Based on this analysis,a coordinated FRT strategy is proposed,which combines a segmented current limiting control for the wind-turbine(WT)grid-side converters(GSCs)and a constant AC current control for the WFMMC.The strategy ensures effective voltage support during the fault and prevents MMC current saturation during fault recovery,enabling fast and stable system restoration.Electromagnetic transient simulations in PSCAD/EMTDC verify the feasibility of the proposed fault ride-through strategy.展开更多
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated chara...A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.展开更多
Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of e...Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.展开更多
To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polym...To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.展开更多
A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,an...A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,and a two stage ring VCO.The principle of this VCO is demonstrated and further the phase noise is discussed in detail.The fabrication of prototype is demonstrated using 0 25μm single poly five metal N well salicide CMOS digital process.The reports show that the novel VCO is can generate quadrature LO signals with a tuning range of more than 300MHz as well as the phase noise--104 33dBc/Hz at 600KHz offset at 2 41GHz (when measuring only one port of differential outputs).In addition,this VCO can work in low power supply voltage and dissipate low power,thus it can be used in many integrated transceivers.展开更多
Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate la...Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.展开更多
A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A ...A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.展开更多
Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the ap...Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the application of conventional control strategies for stability operation face several challenges due to the uncontrollability of the DR.In this paper,a coordinated control strategy of offshore wind farms using the DR-HVDC transmission technology to connect with the onshore grid,is investigated.A novel coordinated control strategy for DR-HVDC is proposed based on the analysis of the DC current control ability of the full-bridge-based modular multilevel converter(FB-MMC)at the onshore station and the input and output characteristics of the diode rectifier at the offshore.Considering the characteristics of operation stability and decoupling between reactive power and active power,a simplified design based on double-loop droop control for offshore AC voltage is proposed after power flow and voltage–current(I–V)characteristics of the offshore wind farm being analyzed.Furthermore,the impact of onshore AC fault to offshore wind farm is analyzed,and a fast fault detection and protection strategy without relying on communication is proposed.Case studies carried out by PSCAD/EMTDC verify the effectiveness of the proposed control strategy for the start up,power fluctuation,and onshore and offshore fault conditions.展开更多
Praseodymium doped lithium yttrium molybdate Li Y1-8x Pr x（Mo O4）2（x=0.005-0.025） phosphors were successfully prepared by the hydrothermal method. The phase, morphology, and luminescent property of the prepared ph...Praseodymium doped lithium yttrium molybdate Li Y1-8x Pr x（Mo O4）2（x=0.005-0.025） phosphors were successfully prepared by the hydrothermal method. The phase, morphology, and luminescent property of the prepared phosphors were investigated by X-ray diffraction and scanning electron microscopy. The results indicated that doping of Pr^3＋ ions did not change the main phase of the phosphors. The samples emitted red luminescence upon excitation at 453 nm and the strongest emission peak corresponding to the characteristic transition of the Pr3＋ ion： 3P0→3F2 was observed at 657 nm. Li Y（Mo O4）2：Pr^3＋ red phosphors could be effectively excited by blue light emitting-diodes to emit red light; thus, acting as potential candidates for compensating the red light deficiency of cerium doped yttrium aluminum garnet yellow phosphor.展开更多
GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etch...GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.展开更多
The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especiall...The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.展开更多
The efficiency droop behaviors of GaN-based green light-emitting diodes （LEDs） are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as te...The efficiency droop behaviors of GaN-based green light-emitting diodes （LEDs） are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level （1 A/cm2 ） with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.展开更多
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. Wit...This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.展开更多
The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the devic...The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.展开更多
This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type dr...This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR.展开更多
基金National Key Research and Development Program of China(2024YFA1410700,2021YFA1200700)National Natural Science Foundation of China(62474065,T2222025,62174053)+3 种基金Natural Science Foundation of Chongqing(CSTB2024NSCQ-JQX0005)Shanghai Science and Technology Innovation Action Plan(24QA2702300,24YF2710400)National Postdoctoral Program(GZB20240225)Fundamental Research Funds for the Central Universities。
文摘Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金funded by the Science and Technology Projects of State Grid Zhejiang Electric Power Co.,Ltd.(5211DS24000G).
文摘With the rapid development of large-scale offshore wind farms,efficient and reliable power transmission systems are urgently needed.Hybrid high-voltage direct current(HVDC)configurations combining a diode rectifier unit(DRU)and a modular multilevel converter(MMC)have emerged as a promising solution,offering advantages in cost-effectiveness and control capability.However,the uncontrollable nature of the DRU poses significant challenges for systemstability under offshore AC fault conditions,particularly due to its inability to provide fault current or voltage support.This paper investigates the offshore AC fault characteristics and fault ride-through(FRT)strategy of a hybrid offshore wind power transmission system based on a diode rectifier unit DRU and MMC.First,the dynamic response of the hybrid system under offshore symmetrical three-phase faults is analyzed.It is demonstrated that due to the unidirectional conduction nature of the DRU,its AC current rapidly drops to zero during faults,and the fault current is solely contributed by the wind turbine generators(WTGs)and wind farm MMC(WFMMC).Based on this analysis,a coordinated FRT strategy is proposed,which combines a segmented current limiting control for the wind-turbine(WT)grid-side converters(GSCs)and a constant AC current control for the WFMMC.The strategy ensures effective voltage support during the fault and prevents MMC current saturation during fault recovery,enabling fast and stable system restoration.Electromagnetic transient simulations in PSCAD/EMTDC verify the feasibility of the proposed fault ride-through strategy.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62204203)。
文摘A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.
基金supported by the National Key R&D Program of China (Grant No.2023YFA1406400)the National Natural Science Foundation of China (Grant Nos.12534005 and 12325402)。
文摘Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.
基金the support from the Jiangsu Provincial Senior Talent Program (Dengfeng,Jiangsu University)the support from the National Key R&D Program of China (No.2024YFB3612600)+3 种基金the National Natural Science Foundation of China (Nos.22275098,62288102)Basic Research Program of Jiangsu (No.BK20243057)the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (No.NY222097)the National Natural Science Foundation of China (No.62205035)。
文摘To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.
文摘A voltage controlled oscillator (VCO) which can generate 2 4GHz quadrature local oscillating (LO) signals is reported.It combines a LC VCO,realized by on chip symmetrical spiral inductors and differential diodes,and a two stage ring VCO.The principle of this VCO is demonstrated and further the phase noise is discussed in detail.The fabrication of prototype is demonstrated using 0 25μm single poly five metal N well salicide CMOS digital process.The reports show that the novel VCO is can generate quadrature LO signals with a tuning range of more than 300MHz as well as the phase noise--104 33dBc/Hz at 600KHz offset at 2 41GHz (when measuring only one port of differential outputs).In addition,this VCO can work in low power supply voltage and dissipate low power,thus it can be used in many integrated transceivers.
文摘Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.
文摘A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.
基金supported by State Grid Science and Technology Project“Study on Key Technologies of Large Scale Offshore Wind Power Integrating with Onshore Grid”(4000-202055045A-0-0-00)
文摘Due to low investment cost and high reliability,a new scheme called DR-HVDC(Diode Rectifier based HVDC)transmission was recently proposed for grid integration of large offshore wind farms.However,in this scheme,the application of conventional control strategies for stability operation face several challenges due to the uncontrollability of the DR.In this paper,a coordinated control strategy of offshore wind farms using the DR-HVDC transmission technology to connect with the onshore grid,is investigated.A novel coordinated control strategy for DR-HVDC is proposed based on the analysis of the DC current control ability of the full-bridge-based modular multilevel converter(FB-MMC)at the onshore station and the input and output characteristics of the diode rectifier at the offshore.Considering the characteristics of operation stability and decoupling between reactive power and active power,a simplified design based on double-loop droop control for offshore AC voltage is proposed after power flow and voltage–current(I–V)characteristics of the offshore wind farm being analyzed.Furthermore,the impact of onshore AC fault to offshore wind farm is analyzed,and a fast fault detection and protection strategy without relying on communication is proposed.Case studies carried out by PSCAD/EMTDC verify the effectiveness of the proposed control strategy for the start up,power fluctuation,and onshore and offshore fault conditions.
基金supported by National Natural Science Foundation of China(21205092)the National High-tech Research and Development Program of China(863 Program)(2011AA05A202)
文摘Praseodymium doped lithium yttrium molybdate Li Y1-8x Pr x（Mo O4）2（x=0.005-0.025） phosphors were successfully prepared by the hydrothermal method. The phase, morphology, and luminescent property of the prepared phosphors were investigated by X-ray diffraction and scanning electron microscopy. The results indicated that doping of Pr^3＋ ions did not change the main phase of the phosphors. The samples emitted red luminescence upon excitation at 453 nm and the strongest emission peak corresponding to the characteristic transition of the Pr3＋ ion： 3P0→3F2 was observed at 657 nm. Li Y（Mo O4）2：Pr^3＋ red phosphors could be effectively excited by blue light emitting-diodes to emit red light; thus, acting as potential candidates for compensating the red light deficiency of cerium doped yttrium aluminum garnet yellow phosphor.
基金Project supported by the Production and Research Program of Guangdong Province and Ministry of Education (Grant No.2009B090300338)Guangdong Natural Science Foundation of China (Grant No.8251063101000007)+1 种基金Guangdong Science and Technology Plan of China (Grant No.2008B010200004)the Student Research Project of South China Normal University (Grant No.09XXKC03)
文摘GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03A121)the National Basic Research Program of China(Grant No.2006CB604900)
文摘The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.
基金Project supported by the State Key Program for Basic Research of China (Grant Nos. 2010CB327504, 2011CB301900, and 2011CB922100)the National Natural Science Foundation of China (Grant Nos. 60825401, 60936004, and 11104130)the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012110, BK2011556, and BK2011050)
文摘The efficiency droop behaviors of GaN-based green light-emitting diodes （LEDs） are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level （1 A/cm2 ） with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.
基金The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284)
文摘This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4162030)the National Science and Technology Major Project of China(Grant No.2013ZX02303002)
文摘The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
基金Project supported by the 13115 Innovation Engineering of Shaanxi Province of China(Grant No.2008ZDKG-30)
文摘This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR.
