Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LED...Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.展开更多
Super-fine electrohydrodynamic inkjet(SIJ)printing of perovskite nanocrystal(PNC)colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for fullcolor m...Super-fine electrohydrodynamic inkjet(SIJ)printing of perovskite nanocrystal(PNC)colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for fullcolor micro-LED displays.However,the impact of solvent on both the printing process and the morphology of SIJ-printed PNC color conversion microstructures remains underexplored.In this study,we prepared samples of CsPbBr3PNC colloid inks in various solvents and investigated the solvent's impact on SIJ printed PNC microstructures.Our findings reveal that the boiling point of the solvent is crucial to the SIJ printing process of PNC colloid inks.Only does the boiling point of the solvent fall in the optimal range,the regular positioned,micron-scaled,conical PNC microstructures can be successfully printed.Below this optimal range,the ink is unable to be ejected from the nozzle;while above this range,irregular positioned microstructures with nanoscale height and coffee-ring-like morphology are produced.Based on these observations,high-resolution color conversion PNC microstructures were effectively prepared using SIJ printing of PNC colloid ink dispersed in dimethylbenzene solvent.展开更多
Eco-friendly quantum-dot light-emitting diodes(QLEDs),which employ colloidal quantum dots(QDs)such as InP,and ZnSe,stand out due to their low toxicity,color purity,and high efficiency.Currently,significant advancement...Eco-friendly quantum-dot light-emitting diodes(QLEDs),which employ colloidal quantum dots(QDs)such as InP,and ZnSe,stand out due to their low toxicity,color purity,and high efficiency.Currently,significant advancements have been made in the performance of cadmium-free QLEDs.However,several challenges persist in the industrialization of ecofriendly QLED displays.For instance,(1)the poor performance,characterized by low photoluminescence quantum yield(PLQY),unstable ligand,and charge imbalance,cannot be effectively addressed with a solitary strategy;(2)the degradation mechanism,involving emission quenching,morphological inhomogeneity,and field-enhanced electron delocalization remains unclear;(3)the lack of techniques for color patterning,such as optical lithography and transfer printing.Herein,we undertake a specific review of all technological breakthroughs that endeavor to tackle the above challenges associated with cadmium-free QLED displays.We begin by reviewing the evolution,architecture,and operational characteristics of eco-friendly QLEDs,highlighting the photoelectric properties of QDs,carrier transport layer stability,and device lifetime.Subsequently,we focus our attention not only on the latest insights into device degradation mechanisms,particularly,but also on the remarkable technological progress in color patterning techniques.To conclude,we provide a synthesis of the promising prospects,current challenges,potential solutions,and emerging research trends for QLED displays.展开更多
GaN diodes for high energy(64.8 MeV)proton detection were fabricated and investigated.A comparison of the performance of GaN diodes with different structures is presented,with a focus on sapphire and on GaN substrates...GaN diodes for high energy(64.8 MeV)proton detection were fabricated and investigated.A comparison of the performance of GaN diodes with different structures is presented,with a focus on sapphire and on GaN substrates,Schottky and pin diodes,and different active layer thicknesses.Pin diodes fabricated on a sapphire substrate are the best choice for a GaN proton detector working at 0 V bias.They are sensitive(minimum detectable proton beam<1 pA/cm^(2)),linear as a function of proton current and fast(<1 s).High proton current sensitivity and high spatial resolution of GaN diodes can be exploited in the future for proton imaging of patients in proton therapy.展开更多
Carbon dots(CDs),due to their low cost,high stability,and high luminous efficiency,have emerged as an excellent material for the emissive layer in next-generation electroluminescent light-emitting diodes(ELEDs).Howeve...Carbon dots(CDs),due to their low cost,high stability,and high luminous efficiency,have emerged as an excellent material for the emissive layer in next-generation electroluminescent light-emitting diodes(ELEDs).However,improving the efficiency of fluorescent CDs-based ELEDs remains challenging,primarily because it is difficult to utilize triplet excitons in the electroluminescence process.Therefore,enhancing the exciton utilization efficiency of CDs during electroluminescence is crucial.Based on this,we exploited the characteristic large exciton binding energy commonly found in CDs to develop exciton-emitting CDs.These CDs facilitate the radiative recombination of excitons during electroluminescence,thereby improving the electroluminescent efficiency.By rationally selecting precursors,we developed high quantum efficiency CDs and subsequently constructed CDs-based ELEDs.The blue-light device exhibited an external quantum efficiency of over 4%.This study introduces a novel design concept for CDs,providing a new strategy for developing high-performance blue ELEDs based on CDs.展开更多
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).
文摘Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.
基金supported by the National Natural Science Foundation of China(No.62374142)Fundamental Research Funds for the Central Universities(Nos.20720220085 and 20720240064)+2 种基金External Cooperation Program of Fujian(No.2022I0004)Major Science and Technology Project of Xiamen in China(No.3502Z20191015)Xiamen Natural Science Foundation Youth Project(No.3502Z202471002)。
文摘Super-fine electrohydrodynamic inkjet(SIJ)printing of perovskite nanocrystal(PNC)colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for fullcolor micro-LED displays.However,the impact of solvent on both the printing process and the morphology of SIJ-printed PNC color conversion microstructures remains underexplored.In this study,we prepared samples of CsPbBr3PNC colloid inks in various solvents and investigated the solvent's impact on SIJ printed PNC microstructures.Our findings reveal that the boiling point of the solvent is crucial to the SIJ printing process of PNC colloid inks.Only does the boiling point of the solvent fall in the optimal range,the regular positioned,micron-scaled,conical PNC microstructures can be successfully printed.Below this optimal range,the ink is unable to be ejected from the nozzle;while above this range,irregular positioned microstructures with nanoscale height and coffee-ring-like morphology are produced.Based on these observations,high-resolution color conversion PNC microstructures were effectively prepared using SIJ printing of PNC colloid ink dispersed in dimethylbenzene solvent.
基金supported by the Research Projects of Department of Education of Guangdong Province-024CJPT002Special Project of Guangdong Provincial Department of Education in Key Areas (No. 6021210075K)Shenzhen Polytechnic University Research Fund. (No. 6024310006K)
文摘Eco-friendly quantum-dot light-emitting diodes(QLEDs),which employ colloidal quantum dots(QDs)such as InP,and ZnSe,stand out due to their low toxicity,color purity,and high efficiency.Currently,significant advancements have been made in the performance of cadmium-free QLEDs.However,several challenges persist in the industrialization of ecofriendly QLED displays.For instance,(1)the poor performance,characterized by low photoluminescence quantum yield(PLQY),unstable ligand,and charge imbalance,cannot be effectively addressed with a solitary strategy;(2)the degradation mechanism,involving emission quenching,morphological inhomogeneity,and field-enhanced electron delocalization remains unclear;(3)the lack of techniques for color patterning,such as optical lithography and transfer printing.Herein,we undertake a specific review of all technological breakthroughs that endeavor to tackle the above challenges associated with cadmium-free QLED displays.We begin by reviewing the evolution,architecture,and operational characteristics of eco-friendly QLEDs,highlighting the photoelectric properties of QDs,carrier transport layer stability,and device lifetime.Subsequently,we focus our attention not only on the latest insights into device degradation mechanisms,particularly,but also on the remarkable technological progress in color patterning techniques.To conclude,we provide a synthesis of the promising prospects,current challenges,potential solutions,and emerging research trends for QLED displays.
基金support from MATRIX(ANR-22-CE92-0047)with financial support from ITMI Cancer of Aviesan within the framework of the 2021−2030 Cancer Control Strategy,on funds administrated by INSERM through the project NECTAR.Matilde Siviero acknowledges funding from the French−German University/Saarbrücken(contract CDOC-06-2022).
文摘GaN diodes for high energy(64.8 MeV)proton detection were fabricated and investigated.A comparison of the performance of GaN diodes with different structures is presented,with a focus on sapphire and on GaN substrates,Schottky and pin diodes,and different active layer thicknesses.Pin diodes fabricated on a sapphire substrate are the best choice for a GaN proton detector working at 0 V bias.They are sensitive(minimum detectable proton beam<1 pA/cm^(2)),linear as a function of proton current and fast(<1 s).High proton current sensitivity and high spatial resolution of GaN diodes can be exploited in the future for proton imaging of patients in proton therapy.
基金supported by the National Natural Science Foundation of China(Nos.22205058,22105064,52122308)the Funding Plan of Key Scientific Research Projects in Colleges and Universities of Henan Province(No.23A150001)+2 种基金Doctoral Scientific Research Start-up Foundation from Henan University of Technology(No.2021BS024)the Project of Youth Backbone Teachers of Henan University of Technology(No.21421250)the Innovative Funds Plan of Henan University of Technology(No.2022ZKCJ01)。
文摘Carbon dots(CDs),due to their low cost,high stability,and high luminous efficiency,have emerged as an excellent material for the emissive layer in next-generation electroluminescent light-emitting diodes(ELEDs).However,improving the efficiency of fluorescent CDs-based ELEDs remains challenging,primarily because it is difficult to utilize triplet excitons in the electroluminescence process.Therefore,enhancing the exciton utilization efficiency of CDs during electroluminescence is crucial.Based on this,we exploited the characteristic large exciton binding energy commonly found in CDs to develop exciton-emitting CDs.These CDs facilitate the radiative recombination of excitons during electroluminescence,thereby improving the electroluminescent efficiency.By rationally selecting precursors,we developed high quantum efficiency CDs and subsequently constructed CDs-based ELEDs.The blue-light device exhibited an external quantum efficiency of over 4%.This study introduces a novel design concept for CDs,providing a new strategy for developing high-performance blue ELEDs based on CDs.
