Triphenylamine(TPA)is the most promising donor fragment for the construction of long-wavelength thermally activated delayed fluorescence(TADF)emitters owing to its suitable dihedral angle that could enhance radiative ...Triphenylamine(TPA)is the most promising donor fragment for the construction of long-wavelength thermally activated delayed fluorescence(TADF)emitters owing to its suitable dihedral angle that could enhance radiative decay to compete with the serious non-radiative decay.However,the moderate electron-donating capacity of TPA seriously limits the selection of acceptor for constructing longwavelength TADF emitters with narrow bandgaps.To address this issue,in this work,the peripheral benzene of TPA was replaced with 1,4-benzodioxane and anisole to obtain two new electrondonating units N-(2,3-dihydrobenzo[b][1,4]dioxin-6-yl)-N-phenyl-2,3-dihydrobenzo[b][1,4]dioxin-6-amine(TPADBO,−5.02 eV)and 4-methoxy-N-(4-methoxyphenyl)-N-phenylaniline(TPAMO,−5.00 eV),which possess much shallower highest occupied molecule orbital(HOMO)energy levels than the prototype TPA(−5.33 eV).Based on TPA and the modified TPA donor fragments,three TADF emitters were designed and synthesized,namely Py-TPA,Py-TPADBO and Py-TPAMO,with the same acceptor fragment 12-(2,6-diisopropylphenyl)pyrido[2′,3′:5,6]pyrazino[2,3-f][1,10]phenanthroline(Py).Among them,Py-TPAMO exhibits the highest photoluminescence quantum yield of 78.4%and the smallest singlet-triplet energy gap,which is because the introduction of anisole does not cause significant molecule deformation for the excited Py-TPAMO.And Py-TPAMO-based OLEDs successfully realize a maximum external quantum efficiency of 25.5%with the emission peak at 605 nm.This work provides a series of candidate of donor fragments for the development of efficient long-wavelength TADF emitters.展开更多
Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunne...Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.展开更多
Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of e...Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.展开更多
AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layer...AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layers(EBLs).To overcome these limitations,we propose an EBL-free DUV LD design incor-porating a 1-nm undoped Al_(0.8)Ga_(0.2)N thin strip layer after the last quantum barrier.Using PICS3D simula-tions,we evaluate the optical and electrical characteristics.Results show a significant increase in effective electron barrier height(from 158.2 meV to 420.7 meV)and a reduction in hole barrier height(from 149.2 meV to 62.8 meV),which enhance hole injection and reduce electron leakage.The optimized structure(LD3)achieves a 14%increase in output power,improved slope efficiency(1.85 W/A),and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions,im-proving recombination efficiency.展开更多
Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes(LEDs)due to their narrow emission linewidths,high photoluminescence quantum yields,a...Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes(LEDs)due to their narrow emission linewidths,high photoluminescence quantum yields,and tunable emission wavelengths.Achieving high-performance perovskite LEDs(Pe LEDs)requires the emissive layer to possess efficient radiative recombination,low defect density,minimal ion mobility,and effective carrier confinement.Perovskite/perovskite heterostructure(PPHS)offers a compelling approach for engineering emissive layers with these desired attributes,owing to their ability to passivate surface defects,tailor bandgaps,and suppress ion migration.Pe LEDs based on PPHS have demonstrated superior performance compared to single-phase devices,particularly in terms of external quantum efficiency and operational stability.This review provides a comprehensive overview of the typical PPHS architectures applied in Pe LEDs,including vertical,lateral,and bulk configurations.We discuss representative fabrication strategies and the associated optoelectronic properties of these heterostructures,highlighting the mechanisms by which they enhance device efficiency and stability.Finally,we explore the remaining challenges and prospects for the application of PPHS in Pe LEDs and other luminescent technologies.展开更多
The increasing demand for flexible displays and wearable electronics has driven extensive efforts to develop stretchable organic lightemitting diodes(OLEDs).A critical challenge in this field is the creation of emissi...The increasing demand for flexible displays and wearable electronics has driven extensive efforts to develop stretchable organic lightemitting diodes(OLEDs).A critical challenge in this field is the creation of emissive layers that combine high efficiency with mechanical robustness.Thermally activated delayed fluorescence(TADF)materials have attracted significant attention as third-generation emitters capable of achieving 100%internal quantum efficiency;however,their application in stretchable OLEDs has been limited.In this study,we propose an elastomer doping strategy.Polyurethane(PU)is incorporated into TADF polymers to improve their mechanical flexibility while maintaining a high luminescent efficiency.The resulting composite films exhibited excellent TADF characteristics and remarkable stretchability(75%).OLEDs fabricated from these materials achieved a maximum external quantum efficiency(EQE)of 14.26%and a peak luminance of 73570 cd·m^(-2),with the PUdoped devices showing a significantly suppressed efficiency roll-off.Additionally,a fully stretchable OLED architecture was designed and operated under tensile strain to maintain stable electroluminescent performance.These results demonstrate that elastomer doping is an effective strategy for balancing the mechanical compliance with optoelectronic performance,offering a promising pathway for the development of high-performance stretchable OLEDs for flexible electronics.展开更多
Owing to the exceptional optoelectronic properties,metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies,providing perovskite light-emitting diodes(Pe LEDs)g...Owing to the exceptional optoelectronic properties,metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies,providing perovskite light-emitting diodes(Pe LEDs)great potential for high-quality color displays with a wide color gamut and pure color emission.Although laboratory-scale Pe LEDs have achieved neartheoretical efficiencies,challenges such as achieving uniform large-area films,improving material stability,and enhancing patterning precision remain barriers to commercialization.This review presents a systematic analysis of scalable manufacturing and precision patterning strategies for Pe LEDs,focusing on their applications in large-area lighting and full-color displays.Fabrication methods are categorized into film deposition techniques(spin-coating,blade-coating,and thermal evaporation)and patterning strategies,including top-down(photolithography,laser/e-beam lithography,and nanoimprinting)and bottom-up(patterned crystal growth,inkjet printing,and electrohydrodynamic jet printing)approaches.In this review,we discuss the advantages and limitations of each strategy,highlight current challenges,and outlook possible pathways towards scalable,high-performance Pe LEDs for advanced optoelectronic applications.展开更多
This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidew...This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.展开更多
Electrodeposited organic light-emitting diode(OLED)technology requires a spin-coating-free hole-injection layer that simultaneously provides smooth surface morphology,stable energy levels,and compatibility with high-r...Electrodeposited organic light-emitting diode(OLED)technology requires a spin-coating-free hole-injection layer that simultaneously provides smooth surface morphology,stable energy levels,and compatibility with high-resolution pixel architectures.In this study,electropolymerization of 3,4-ethylenedioxythiophene(EDOT)in poly(styrene sulfonate)(PSS-)surfactant-solubilized colloidal media is shown to afford poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)films with robust surface uniformity and stable energy levels suitable for application as hole-injection layers in OLEDs.Systematic investigation reveals that the hole-injection properties of these films are governed primarily by the colloidal chemistry of EDOT/PSS-surfactant-solubilized systems,rather than by conventional electrochemical parameters.This colloidal regulation modulates the film work function over a practically useful range.Incorporation of optimized films into OLEDs leads to enhanced hole injection and improved device performance,with external quantum efficiency increasing from 2.2%to 7.4%and minimal roll-off.Overall,this work demonstrates a feasible example of realizing spin-coating-free hole-injection layers,offering a potential direction for the development of electrodeposited injection layers for OLEDs.展开更多
To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polym...To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.展开更多
As a novel class of purely organic fluores-cent materials,multiple resonance thermal-ly activated delayed fluorescence(MR-TADF)compounds hold significant promise for next-generation display technologies.The efficiency...As a novel class of purely organic fluores-cent materials,multiple resonance thermal-ly activated delayed fluorescence(MR-TADF)compounds hold significant promise for next-generation display technologies.The efficiency of exciton utilization and the overall performance of organic light-emit-ting devices are closely linked to the singlet-triplet energy gap(ΔE_(ST))of MR-TADF emitters.Identifying an economic and accu-rate theoretical approach to predictΔE_(ST)would be beneficial for high-throughput screening and facilitate the inverse design of MR-TADF molecules.In this study,we evaluated the S_(1)state energy(E(S_(1))),T_(1)state ener-gy(E(T_(1))),andΔE_(ST)using three different physical interpretations:adiabatic excitation ener-gy,vertical absorption energy,and vertical emission energy.We employed the time-depen-dent density functional theory(TDDFT)and delta self-consistent field(ΔSCF)methods to calculate E(S_(1)),E(T_(1)),andΔE_(ST)for 20 MR-TADF molecules reported in the literature.We compared these calculated values with experimental data obtained from fluorescence spec-troscopy at room-temperature(or 77 K)and phosphorescence spectroscopy conducted at 77 K.Our findings indicate that the vertical absorption energy at the S0 state minimum,deter-mined by theΔSCF method,accurately predicts the S_(1)state energy.Similarly,the vertical absorption energy at the S0 state minimum,calculated using the TDDFT method,effectively predicts the T_(1)state energy.TheΔE_(ST)derived from the difference between these two excita-tion energies exhibited the smallest mean absolute error of only 0.039 eV compared to the ex-perimental values.This combination represents the most accurate and cost-effective method reported to date for predicting theΔE_(ST)of MR-TADF molecules,and can be integrated into AI-driven inverse design workflows for new emitters.展开更多
Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
Thermally activated delayed fluorescence(TADF)molecules have outstanding potential for applications in organic light-emitting diodes(OLEDs).Due to the lack of systematic studies on the correlation between molecular st...Thermally activated delayed fluorescence(TADF)molecules have outstanding potential for applications in organic light-emitting diodes(OLEDs).Due to the lack of systematic studies on the correlation between molecular structure and luminescence properties,TADF molecules are far from meeting the needs of practical applications in terms of variety and number.In this paper,three twisted TADF molecules are studied and their photophysical properties are theoretically predicted based on the thermal vibrational correlation function method combined with multiscale calculations.The results show that all the molecules exhibit fast reverse intersystem crossing(RISC)rates(kRISC),predicting their TADF luminescence properties.In addition,the binding of DHPAzSi as the donor unit with different acceptors can change the dihedral angle between the ground and excited states,and the planarity of the acceptors is positively correlated with the reorganization energy,a property that has a strong influence on the non-radiative process.Furthermore,a decrease in the energy of the molecular charge transfer state and an increase in the kRISC were observed in the films.This study not only provides a reliable explanation for the observed experimental results,but also offers valuable insights that can guide the design of future TADF molecules.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
Thermally activated delayed fluorescence(TADF)materials driven by a through-space charge transfer(TSCT)mechanism have garnered wide interest.However,access of TSCT-TADF molecules with longwavelength emission remains a...Thermally activated delayed fluorescence(TADF)materials driven by a through-space charge transfer(TSCT)mechanism have garnered wide interest.However,access of TSCT-TADF molecules with longwavelength emission remains a formidable challenge.In this study,we introduce a novel V-type DA-D-A’emitter,Trz-mCzCbCz,by using a carborane scaffold.This design strategically incorporates carbazole(Cz)and 2,4,6-triphenyl-1,3,5-triazine(Trz)as donor and acceptor moieties,respectively.Theoretical calculations alongside experimental validations affirm the typical TSCT-TADF characteristics of this luminogen.Owing to the unique structural and electronic attributes of carboranes,Trz-mCzCbCz exhibits an orange-red emission,markedly diverging from the traditional blue-to-green emissions observed in classical Cz and Trz-based TADF molecules.Moreover,bright emission in aggregates was observed for Trz-mCzCbCz with absolute photoluminescence quantum yield(PLQY)of up to 88.8%.As such,we have successfully fabricated five organic light-emitting diodes(OLEDs)by utilizing Trz-mCzCbCz as the emitting layer.It is important to note that both the reverse intersystem crossing process and the TADF properties are profoundly influenced by host materials.The fabricated OLED devices reached a maximum external quantum efficiency(EQE)of 12.7%,with an emission peak at 592 nm.This represents the highest recorded efficiency for TSCT-TADF OLEDs employing carborane derivatives as emitting layers.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 62222503, 52073040 and 52130304)the Sichuan Science and Technology Program (Nos. 2024NSFSC0012,2023NSFSC1973 and 2024NSFSC1446)+2 种基金the China Postdoctoral Science Foundation (Nos. 2023M740504 and GZC20230380)the Sichuan Provincial Human Resources and Social Security Department Programthe Collaborative Innovation Center of Suzhou Nano Science&Technology
文摘Triphenylamine(TPA)is the most promising donor fragment for the construction of long-wavelength thermally activated delayed fluorescence(TADF)emitters owing to its suitable dihedral angle that could enhance radiative decay to compete with the serious non-radiative decay.However,the moderate electron-donating capacity of TPA seriously limits the selection of acceptor for constructing longwavelength TADF emitters with narrow bandgaps.To address this issue,in this work,the peripheral benzene of TPA was replaced with 1,4-benzodioxane and anisole to obtain two new electrondonating units N-(2,3-dihydrobenzo[b][1,4]dioxin-6-yl)-N-phenyl-2,3-dihydrobenzo[b][1,4]dioxin-6-amine(TPADBO,−5.02 eV)and 4-methoxy-N-(4-methoxyphenyl)-N-phenylaniline(TPAMO,−5.00 eV),which possess much shallower highest occupied molecule orbital(HOMO)energy levels than the prototype TPA(−5.33 eV).Based on TPA and the modified TPA donor fragments,three TADF emitters were designed and synthesized,namely Py-TPA,Py-TPADBO and Py-TPAMO,with the same acceptor fragment 12-(2,6-diisopropylphenyl)pyrido[2′,3′:5,6]pyrazino[2,3-f][1,10]phenanthroline(Py).Among them,Py-TPAMO exhibits the highest photoluminescence quantum yield of 78.4%and the smallest singlet-triplet energy gap,which is because the introduction of anisole does not cause significant molecule deformation for the excited Py-TPAMO.And Py-TPAMO-based OLEDs successfully realize a maximum external quantum efficiency of 25.5%with the emission peak at 605 nm.This work provides a series of candidate of donor fragments for the development of efficient long-wavelength TADF emitters.
基金National Key Research and Development Program of China(2024YFA1410700,2021YFA1200700)National Natural Science Foundation of China(62474065,T2222025,62174053)+3 种基金Natural Science Foundation of Chongqing(CSTB2024NSCQ-JQX0005)Shanghai Science and Technology Innovation Action Plan(24QA2702300,24YF2710400)National Postdoctoral Program(GZB20240225)Fundamental Research Funds for the Central Universities。
文摘Tunneling diodes hold significant promise for future rectification in the terahertz(THz)and visible light spectra,thanks to their femtosecond-scale transit-time tunneling capabilities.In this work,TiN/ZnO/Pt fin tunneling diodes(FTDs)with tunneling distances of 10 and 5 nm are fabricated,which demonstrate remarkable characteristics,including ultrahigh asymmetry(1.6×10^(4)for 10 nm device and 1.6×10^(3) for 5 nm device),high responsivity(25.3 V^(-1) for 10 nm device and 28.3 V^(-1) for 5 nm device)at zero bias,surpassing the thermal voltage limit of conventional Schottky diodes,and low turn-on voltage(V_(on))of approximately 100 mV for both devices,making them ideal for power conversion applications.Using technology computer-aided design(TCAD)simulations,the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling(FNT)and trap-assisted tunneling(TAT)under different biasing conditions,as illustrated by the corresponding energy band profiles.Furthermore,by integrating the FTDs,a rectifier bridge circuit is designed and exhibits full-wave rectification behavior,validated through SPICE simulations for THz-band operations.This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.
基金supported by the National Key R&D Program of China (Grant No.2023YFA1406400)the National Natural Science Foundation of China (Grant Nos.12534005 and 12325402)。
文摘Superconducting diodes,which enable dissipationless supercurrent flow in one direction while blocking it in the reverse direction,are emerging as pivotal components for superconducting electronics.The development of editable superconducting diodes could unlock transformative applications,including dynamically reconfigurable quantum circuits that adapt to operational requirements.Here,we report the first observation of the superconducting diode effect(SDE)in LaAlO_(3)/KTaO_(3) heterostructures—a two-dimensional oxide interface superconductor with exceptional tunability.We observe a strong SDE in Hall-bar(or strip-shaped)devices under perpendicular magnetic fields(<15 Oe),with efficiencies above 40%and rectification signals exceeding 10 mV.Through conductive atomic force microscope lithography,we demonstrate reversible nanoscale editing of the SDE’s polarity and efficiency by locally modifying the superconducting channel edges.This approach enables multiple nonvolatile configurations within a single device,realizing an editable superconducting diode.Our work establishes LaAlO_(3)/KTaO_(3) as a platform for vortex-based nonreciprocal transport and provides a pathway toward designer quantum circuits with on-demand functionalities.
文摘AlGaN-based deep-ultraviolet(DUV)laser diodes(LDs)face performance challenges due to elec-tron leakage and poor hole injection which is often worsened by polarization effects from conventional elec-tron blocking layers(EBLs).To overcome these limitations,we propose an EBL-free DUV LD design incor-porating a 1-nm undoped Al_(0.8)Ga_(0.2)N thin strip layer after the last quantum barrier.Using PICS3D simula-tions,we evaluate the optical and electrical characteristics.Results show a significant increase in effective electron barrier height(from 158.2 meV to 420.7 meV)and a reduction in hole barrier height(from 149.2 meV to 62.8 meV),which enhance hole injection and reduce electron leakage.The optimized structure(LD3)achieves a 14%increase in output power,improved slope efficiency(1.85 W/A),and lower threshold current.This design also reduces the quantum confined Stark effect and forms dual hole accumulation regions,im-proving recombination efficiency.
基金supported by the Advanced Talents Incubation Program of Hebei University(No.521100224235)the National Natural Science Foundation of China(No.52503363)the Natural Science Foundation of Hebei Province(No.E2025201009)。
文摘Metal halide perovskites have emerged as highly promising candidates for the emissive layer in next-generation light-emitting diodes(LEDs)due to their narrow emission linewidths,high photoluminescence quantum yields,and tunable emission wavelengths.Achieving high-performance perovskite LEDs(Pe LEDs)requires the emissive layer to possess efficient radiative recombination,low defect density,minimal ion mobility,and effective carrier confinement.Perovskite/perovskite heterostructure(PPHS)offers a compelling approach for engineering emissive layers with these desired attributes,owing to their ability to passivate surface defects,tailor bandgaps,and suppress ion migration.Pe LEDs based on PPHS have demonstrated superior performance compared to single-phase devices,particularly in terms of external quantum efficiency and operational stability.This review provides a comprehensive overview of the typical PPHS architectures applied in Pe LEDs,including vertical,lateral,and bulk configurations.We discuss representative fabrication strategies and the associated optoelectronic properties of these heterostructures,highlighting the mechanisms by which they enhance device efficiency and stability.Finally,we explore the remaining challenges and prospects for the application of PPHS in Pe LEDs and other luminescent technologies.
基金supported by the National Natural Science Foundation of China(Nos.T2441002,22525506,U24A20137,and U22A6002)Strategic Priority Research Program of CAS(No.XDB0520101)+1 种基金National Key R&D Program of China(No.2023YFB3609000)CAS Project for Young Scientists in Basic Research(No.YSBR-053)。
文摘The increasing demand for flexible displays and wearable electronics has driven extensive efforts to develop stretchable organic lightemitting diodes(OLEDs).A critical challenge in this field is the creation of emissive layers that combine high efficiency with mechanical robustness.Thermally activated delayed fluorescence(TADF)materials have attracted significant attention as third-generation emitters capable of achieving 100%internal quantum efficiency;however,their application in stretchable OLEDs has been limited.In this study,we propose an elastomer doping strategy.Polyurethane(PU)is incorporated into TADF polymers to improve their mechanical flexibility while maintaining a high luminescent efficiency.The resulting composite films exhibited excellent TADF characteristics and remarkable stretchability(75%).OLEDs fabricated from these materials achieved a maximum external quantum efficiency(EQE)of 14.26%and a peak luminance of 73570 cd·m^(-2),with the PUdoped devices showing a significantly suppressed efficiency roll-off.Additionally,a fully stretchable OLED architecture was designed and operated under tensile strain to maintain stable electroluminescent performance.These results demonstrate that elastomer doping is an effective strategy for balancing the mechanical compliance with optoelectronic performance,offering a promising pathway for the development of high-performance stretchable OLEDs for flexible electronics.
基金supported by 14th Five-Year Plan Key R&D Plan,Ministry of Science and Technology of the People’s Republic of China,2024YFB3409002National Natural Science Foundation of China,12302142+4 种基金HKUSTHKUST(GZ)Collaborative Research Scheme,G035Yangcheng Scholars Research Project-Leading Talent Training Project,2024312156Guangzhou-HKUST(GZ)Joint Funding Scheme,2023A03J0157Guangzhou Basic and Applied Basic Research Project,2024A04J4765Shenzhen Basic Research Project,JCYJ20220530114417040。
文摘Owing to the exceptional optoelectronic properties,metal halide perovskites have emerged as leading semiconductor materials for next-generation display technologies,providing perovskite light-emitting diodes(Pe LEDs)great potential for high-quality color displays with a wide color gamut and pure color emission.Although laboratory-scale Pe LEDs have achieved neartheoretical efficiencies,challenges such as achieving uniform large-area films,improving material stability,and enhancing patterning precision remain barriers to commercialization.This review presents a systematic analysis of scalable manufacturing and precision patterning strategies for Pe LEDs,focusing on their applications in large-area lighting and full-color displays.Fabrication methods are categorized into film deposition techniques(spin-coating,blade-coating,and thermal evaporation)and patterning strategies,including top-down(photolithography,laser/e-beam lithography,and nanoimprinting)and bottom-up(patterned crystal growth,inkjet printing,and electrohydrodynamic jet printing)approaches.In this review,we discuss the advantages and limitations of each strategy,highlight current challenges,and outlook possible pathways towards scalable,high-performance Pe LEDs for advanced optoelectronic applications.
基金supported in part by the National Key Research and Development Program of China(Grant No.2021YFC2203400)Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008)+1 种基金Jiangxi Province Double Thousand Plan (Grant No. S2019CQKJ2638)in part the National Natural Science Foundation of China(Grant Nos.62074053).
文摘This study presents aβ-Ga_(2)O_(3)diode featuring a Fin-channel structure and an anode ohmic contact.The device turnoff is facilitated by the depletion effect induced by the work function difference between the sidewall metal andβ-Ga_(2)O_(3).As the forward bias increases,electron accumulation occurs on the Fin-channel sidewalls,reducing the on-resistance and improving the forward characteristics.Moreover,the device exhibits the reduced surface field(RESURF)effect,similar to trench schottky barrier diodes(SBDs),which shifts the electric field at the fin corners and enhances the breakdown voltage.For a device with a 100 nm fin width(W_(fin)),we achieved a breakdown voltage(BV)of 1137 V,a specific on-resistance(R_(on,sp))of 1.8 mΩ·cm^(2),and a power figure of merit(PFOM)of 0.72 GW/cm^(2).This work expands the fabrication approach forβ-Ga_(2)O_(3)-based devices,advancing their potential for high-performance applications.
基金supported by the National Key R&D Program of China(No.2020YFA0714604)the Fund of Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates(No.2023B1212060003)+1 种基金the SSL Sci-tech Commissioner Program(No.20234383-01KCJ-G)the National Natural Science Foundation of China(No.92463310)。
文摘Electrodeposited organic light-emitting diode(OLED)technology requires a spin-coating-free hole-injection layer that simultaneously provides smooth surface morphology,stable energy levels,and compatibility with high-resolution pixel architectures.In this study,electropolymerization of 3,4-ethylenedioxythiophene(EDOT)in poly(styrene sulfonate)(PSS-)surfactant-solubilized colloidal media is shown to afford poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)films with robust surface uniformity and stable energy levels suitable for application as hole-injection layers in OLEDs.Systematic investigation reveals that the hole-injection properties of these films are governed primarily by the colloidal chemistry of EDOT/PSS-surfactant-solubilized systems,rather than by conventional electrochemical parameters.This colloidal regulation modulates the film work function over a practically useful range.Incorporation of optimized films into OLEDs leads to enhanced hole injection and improved device performance,with external quantum efficiency increasing from 2.2%to 7.4%and minimal roll-off.Overall,this work demonstrates a feasible example of realizing spin-coating-free hole-injection layers,offering a potential direction for the development of electrodeposited injection layers for OLEDs.
基金the support from the Jiangsu Provincial Senior Talent Program (Dengfeng,Jiangsu University)the support from the National Key R&D Program of China (No.2024YFB3612600)+3 种基金the National Natural Science Foundation of China (Nos.22275098,62288102)Basic Research Program of Jiangsu (No.BK20243057)the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (No.NY222097)the National Natural Science Foundation of China (No.62205035)。
文摘To precisely control intrachain π-electron delocalization and interchain interaction simultaneously is the prerequisite to obtain stable and efficient deep-blue light-emitting p-n polymer semiconductors for the polymer light-emitting diodes(PLEDs).Herein,we introduced the steric carbazole-fluorene nanogrid into light-emitting diphenyl sulfone-based p-n polymer semiconductors(PG and PDG) via metal-free C-N coupling polymerization for the fabrication of deep-blue PLEDs.The steric,rigid and twisted configuration between nanogrid and diphenyl sulfone in PG and PDG present the unique characteristic of large steric hindrance interaction to suppress interchain aggregation in solid state.Due to the different length of electron-deficient diphenyl sulfone monomers,PG showed a deep-blue emission with a maximum peak at 428 nm but red-shifted to 480 nm for the PDG films.Interestingly,similar deep-blue emission behavior of PG in diluted non-polar solution and films suggested the extremely weak interchain aggregation.Finally,PLEDs based on PG are fabricated with a stable deep-blue emission of CIE(0.15,0.10),and corresponding EL spectral profile is also completely identical to PL ones of diluted solution,revealed the intrachain emission without obvious interchain excited state,confirmed effectiveness of the steric hindrance functionalization of nanogrid in p-n polymer semiconductor for deep-blue light-emitting organic optoelectronics.
基金support provided by the National Natural Science Foundation of China(No.22273043).
文摘As a novel class of purely organic fluores-cent materials,multiple resonance thermal-ly activated delayed fluorescence(MR-TADF)compounds hold significant promise for next-generation display technologies.The efficiency of exciton utilization and the overall performance of organic light-emit-ting devices are closely linked to the singlet-triplet energy gap(ΔE_(ST))of MR-TADF emitters.Identifying an economic and accu-rate theoretical approach to predictΔE_(ST)would be beneficial for high-throughput screening and facilitate the inverse design of MR-TADF molecules.In this study,we evaluated the S_(1)state energy(E(S_(1))),T_(1)state ener-gy(E(T_(1))),andΔE_(ST)using three different physical interpretations:adiabatic excitation ener-gy,vertical absorption energy,and vertical emission energy.We employed the time-depen-dent density functional theory(TDDFT)and delta self-consistent field(ΔSCF)methods to calculate E(S_(1)),E(T_(1)),andΔE_(ST)for 20 MR-TADF molecules reported in the literature.We compared these calculated values with experimental data obtained from fluorescence spec-troscopy at room-temperature(or 77 K)and phosphorescence spectroscopy conducted at 77 K.Our findings indicate that the vertical absorption energy at the S0 state minimum,deter-mined by theΔSCF method,accurately predicts the S_(1)state energy.Similarly,the vertical absorption energy at the S0 state minimum,calculated using the TDDFT method,effectively predicts the T_(1)state energy.TheΔE_(ST)derived from the difference between these two excita-tion energies exhibited the smallest mean absolute error of only 0.039 eV compared to the ex-perimental values.This combination represents the most accurate and cost-effective method reported to date for predicting theΔE_(ST)of MR-TADF molecules,and can be integrated into AI-driven inverse design workflows for new emitters.
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
文摘Thermally activated delayed fluorescence(TADF)molecules have outstanding potential for applications in organic light-emitting diodes(OLEDs).Due to the lack of systematic studies on the correlation between molecular structure and luminescence properties,TADF molecules are far from meeting the needs of practical applications in terms of variety and number.In this paper,three twisted TADF molecules are studied and their photophysical properties are theoretically predicted based on the thermal vibrational correlation function method combined with multiscale calculations.The results show that all the molecules exhibit fast reverse intersystem crossing(RISC)rates(kRISC),predicting their TADF luminescence properties.In addition,the binding of DHPAzSi as the donor unit with different acceptors can change the dihedral angle between the ground and excited states,and the planarity of the acceptors is positively correlated with the reorganization energy,a property that has a strong influence on the non-radiative process.Furthermore,a decrease in the energy of the molecular charge transfer state and an increase in the kRISC were observed in the films.This study not only provides a reliable explanation for the observed experimental results,but also offers valuable insights that can guide the design of future TADF molecules.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金supported by the Natural Science Foundation of Jiangsu Province(No.BZ2022007)the National Natural Science Foundation of China(No.92261202)+1 种基金the Ministry of Science and Technology of the People’s Republic of China(No.2021YFE0114800)the Ministry of Science and Higher Education of the Russian Federation(No.075-15-2021-1027).
文摘Thermally activated delayed fluorescence(TADF)materials driven by a through-space charge transfer(TSCT)mechanism have garnered wide interest.However,access of TSCT-TADF molecules with longwavelength emission remains a formidable challenge.In this study,we introduce a novel V-type DA-D-A’emitter,Trz-mCzCbCz,by using a carborane scaffold.This design strategically incorporates carbazole(Cz)and 2,4,6-triphenyl-1,3,5-triazine(Trz)as donor and acceptor moieties,respectively.Theoretical calculations alongside experimental validations affirm the typical TSCT-TADF characteristics of this luminogen.Owing to the unique structural and electronic attributes of carboranes,Trz-mCzCbCz exhibits an orange-red emission,markedly diverging from the traditional blue-to-green emissions observed in classical Cz and Trz-based TADF molecules.Moreover,bright emission in aggregates was observed for Trz-mCzCbCz with absolute photoluminescence quantum yield(PLQY)of up to 88.8%.As such,we have successfully fabricated five organic light-emitting diodes(OLEDs)by utilizing Trz-mCzCbCz as the emitting layer.It is important to note that both the reverse intersystem crossing process and the TADF properties are profoundly influenced by host materials.The fabricated OLED devices reached a maximum external quantum efficiency(EQE)of 12.7%,with an emission peak at 592 nm.This represents the highest recorded efficiency for TSCT-TADF OLEDs employing carborane derivatives as emitting layers.
