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Replication of large area nanoimprint stamp with small critical dimension loss 被引量:1
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作者 MENG FanTao GUAN Le +2 位作者 WANG ZhiWen HAN ZhiTao CHU JinKui 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第3期600-605,共6页
In this paper,the replication process of large area nanoimprint stamp with small critical dimension(CD) loss was investigated,using the thin residual layer nanoimprint lithography(NIL) technology.The residual layer th... In this paper,the replication process of large area nanoimprint stamp with small critical dimension(CD) loss was investigated,using the thin residual layer nanoimprint lithography(NIL) technology.The residual layer thickness was optimized by changing the spin-coated resist thickness.The dependences of the residual layer etching rate on gas flow,chamber pressure,and RF power were investigated,and the optimized process conditions were established.By means of the thin residual layer NIL technique and optimized residual layer etching process,large area stamp with small CD loss and multi-orientation patterns was successfully replicated on 2-inch SiO2/Si wafer.The CD loss was controlled within 5 nm.The replicated stamp showed high performance in the patterning with thermal NIL.The replication process reported in this work could also be used to fabricate large area nanostructures with small CD loss. 展开更多
关键词 nanoimprint stamp REPLICATION small critical dimension loss nanoimprint lithography multi-orientation patterns
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