Controlled thermonuclear reactors require consistent monitoring of plasma in the toroidal chamber.Better working conditions of such machines can be monitored by analyzing its radiations.Various wavelengths such as 656...Controlled thermonuclear reactors require consistent monitoring of plasma in the toroidal chamber.Better working conditions of such machines can be monitored by analyzing its radiations.Various wavelengths such as 656.3,486.1,464.7 nm are quite significant which are used for health monitoring of thermonuclear machines.The optical thinfilmfilters which work on construc-tive and destructive interference are the ideal choices.Thesefilters are multi-layered with a pair of high and low refractive index dielectric materials.Significantly high transmission index at the desired wavelength and relatively low transmission at the other wavelengths are desired.With this as the objective,it is necessary to design thefilter.Various optimization techniques are used for identifying the suitable design of thefilters.To choose the parameter combination that provides the most excellent performance,optimization of the design para-meters is entailed.The goal of this work is to improve the optical bandfilter using the Bald eagle search optimization(BES)method.The ideal design is determined by assessing several characteristics such as thickness,refractive index,Full-Width at Half-Maximum(FWHM),and the impact of choosing optical properties,which increases transmission potential.Initially,an alternate multi-layer stack with 28,30,and 32 layers is created by altering the thickness while keeping the dielectric substances high and low refractive indices constant.By adjusting the thickness of each layer,the BES algorithm achieves the best practical solution.The proposed method is implemented using MATLAB and the outcomes show the efficacy of the proposed technique.The transmittance,reflectance,and FWHM using the pro-posed BES are found to be 99.9356%,0.065%,and 1.2 nm respectively.展开更多
Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barr...Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.展开更多
文摘Controlled thermonuclear reactors require consistent monitoring of plasma in the toroidal chamber.Better working conditions of such machines can be monitored by analyzing its radiations.Various wavelengths such as 656.3,486.1,464.7 nm are quite significant which are used for health monitoring of thermonuclear machines.The optical thinfilmfilters which work on construc-tive and destructive interference are the ideal choices.Thesefilters are multi-layered with a pair of high and low refractive index dielectric materials.Significantly high transmission index at the desired wavelength and relatively low transmission at the other wavelengths are desired.With this as the objective,it is necessary to design thefilter.Various optimization techniques are used for identifying the suitable design of thefilters.To choose the parameter combination that provides the most excellent performance,optimization of the design para-meters is entailed.The goal of this work is to improve the optical bandfilter using the Bald eagle search optimization(BES)method.The ideal design is determined by assessing several characteristics such as thickness,refractive index,Full-Width at Half-Maximum(FWHM),and the impact of choosing optical properties,which increases transmission potential.Initially,an alternate multi-layer stack with 28,30,and 32 layers is created by altering the thickness while keeping the dielectric substances high and low refractive indices constant.By adjusting the thickness of each layer,the BES algorithm achieves the best practical solution.The proposed method is implemented using MATLAB and the outcomes show the efficacy of the proposed technique.The transmittance,reflectance,and FWHM using the pro-posed BES are found to be 99.9356%,0.065%,and 1.2 nm respectively.
基金supported by the Special Project Items No.2 in National Long-Term Technology Development Plan(No.2009ZX02308)the Natural Science Foundation of Hebei Province(No.F2012202094)the Doctoral Program Foundation of Xinjiang Normal University Plan(No.XJNUBS1226)
文摘Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.
