Tungsten was plated on the surface of diamond by using thermal diffusion method.Different process parameters were employed to prepare the composites with tungsten,diamond and copper.The micro morphology of different s...Tungsten was plated on the surface of diamond by using thermal diffusion method.Different process parameters were employed to prepare the composites with tungsten,diamond and copper.The micro morphology of different samples was observed,and the thermal conductivity of samples was measured by laser flash method.The optimal process parameters for preparing diamond/copper composites with high thermal conductivity were investigated.The results indicated that plating tungsten on diamond could modify the interface bonding.When the diamond was plated for 60 min,the coating appeared intact,uniform and flat,and the thermal conductivity of the sample could reach as high as 486 W/(m·K).The integrity and uniformity were more important than thickness for the coating.When the tungsten-plated diamond was further annealed,the metallurgical bonding between the coating and the diamond was enhanced,and the thermal conductivity rose to 559 W/(m·K).展开更多
Effects of rare earth element La on the microstructure of Cumatrix diamond tools were researched under the conditions of variousmaterials components and the process parameters in order to improvematerials properties. ...Effects of rare earth element La on the microstructure of Cumatrix diamond tools were researched under the conditions of variousmaterials components and the process parameters in order to improvematerials properties. SEM, XPS and X-ray were used to investigate thefracture section, microstructure and the element valence inmaterials. The Results shown that the combination of rare earthelement La and transition element Ti is advantageous to the bondingstate Between diamond particles and matrix, so it can improve thematerials properties. Suitable sintering temperature is 790 deg. C.展开更多
The thermal conductivity of diamond/copper composites with bimodal particle sizes was studied. The composites were prepared through pressure infiltration of liquid copper into diamond preforms with a mixture of 40 and...The thermal conductivity of diamond/copper composites with bimodal particle sizes was studied. The composites were prepared through pressure infiltration of liquid copper into diamond preforms with a mixture of 40 and 100 pm-size diamonds. The permeability of the preforms with different coarse-to-fine volume ratios of diamonds was investigated. The thermal conductivity of the diamond/copper composites with bimodal size distribution was compared to the theoretical value derived from an analytical model developed by Chu. It is predicted that the diamond/copper composites could reach a higher thermal conductivity and their surface roughness could be improved by applying bimodal diamond particle sizes.展开更多
Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the s...Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred ori- entation of copper grains transformed from （220） to （200）. Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain tmchanged when copper plane （220） grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane （200） grew in the process of co-deposition. It was inferred that copper plane （200） was propitious to the deposition of submicron diamonds.展开更多
The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable den...The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.展开更多
The deposition of high-quality diamond films and their adhesion on cemented carbides are strongly influenced by the catalytic effect of cobalt under typical deposition conditions. Decreasing Co content on the surface...The deposition of high-quality diamond films and their adhesion on cemented carbides are strongly influenced by the catalytic effect of cobalt under typical deposition conditions. Decreasing Co content on the surface of the cemented carbide is often used for the diamond film deposition. But the leaching of Co from the WC-Co substrate leading to a mechanical weak surface often causes a poor adhesion. In this paper we adopted an implant copper layer prepared by vaporization to improve the mechanical properties of the Co-leached substrate. The diamond films were grown by microwave plasma chemical vapor deposition from CH4:H2 gas mixture. The cross section and the morphology of the diamond film were characterized by scanning electron microscopy (SEM). The non-diamond content in the film was analyzed by Raman spectroscopy. The effects of pretreatment on the concentrations of Co and Cu near the interfacial region were examined by energy dispersive spectrum (EDS) equipped with SEM. The adhesion of the diamond on the substrate was evaluated with a Rockwell-type hardness tester. The results indicate that the diamond films prepared with implant copper layer have a good adhesion to the cemented carbide substrate due to the recovery of the mechanical properties of the Co-depleted substrate after the copper implantation and the formation of less amorphous carbon between the substrate and the diamond film.展开更多
The electroless copper deposition on both pure and Cr-coated diamond particles was stud- ied to produce copper/diamond composites for electronic packaging materials. The particles were characterized and the mechanism ...The electroless copper deposition on both pure and Cr-coated diamond particles was stud- ied to produce copper/diamond composites for electronic packaging materials. The particles were characterized and the mechanism of product formation was investigated through scanning electron microscopy （SEM）, energy dispersive spectroscopy （EDS）, X-ray diffraction （XRD）, and X-ray photoelectron spectra （XPS）. The particle coating thickness was measured using optical micro- graphs. The diamond particles got uniform coating thickness of copper crystals layers. This method provided an excellent base for the fabrication of metal-based composites using cheap equipments, and was less time consuming, nature friendly and economical compared with other methods of dia- mond surface metallization.展开更多
Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature （HPHT） sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding ...Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature （HPHT） sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding strength and thermo-physical properties of the composites were achieved using an atomized copper alloy with minor additions of Co, Cr, 13, and Ti. The thermal conductivity （TC） oh- mined exhibited as high as 688 W.m-1.K-1, but also as low as 325 W.m-1.K-l. A large variation in TC can be rationalized by the discrepancy of diamond-matrix interfacial bonding. It was found from fractography that preferential bonding between diamond and the Cu-alloy matrix occurred only on the diamond {100} faces. EDS analysis and Raman spectra suggested that selective interfacial bonding may be attributed to amorphous carbon increasing the wettability between diamond and the Cu-alloy matrix. Amorphous carbon was found to significantly affect the TC of the composite by interface modification.展开更多
A Cu-1.5 wt.%Ti/Diamond(55 vol.%)composite was fabricated by hot forging from powder mixture of copper,titanium and diamond powders at 1050?C.A nano-thick TiC interfacial layer was formed between the diamond particle ...A Cu-1.5 wt.%Ti/Diamond(55 vol.%)composite was fabricated by hot forging from powder mixture of copper,titanium and diamond powders at 1050?C.A nano-thick TiC interfacial layer was formed between the diamond particle and copper matrix during forging,and it has an orientation relationship of(111)TiC//(002)Cu&[110]TiC//[110]Cuwith the copper matrix.HRTEM analysis suggests that TiC is semicoherently bond with copper matrix,which helps reduce phonon scattering at the TiC/Cu interface and facilitates the heat transfer,further leading to the hot-forged copper/diamond composite(referred as to Cu-Ti/Dia-0)has a thermal conductivity of 410 W/m K,and this is about 74%of theoretical thermal conductivity of hot-forged copper/composite(552 W/m K).However,the formation of thin amorphous carbon layer in diamond particle(next to the interfacial TiC layer)and deformed structure in the copper matrix have adverse effect on the thermal conductivity of Cu-Ti/Dia-0 composite.800℃-annealing eliminates the discrepancy in TiC interface morphology between the diamond-{100}and-{111}facets of Cu-Ti/Dia-0 composite,but causes TiC particles coarsening and agglomerating for the Cu-Ti/Dia-2 composite and interfacial layer cracking and spallation for the Cu-Ti/Dia-1 composite.In addition,a large amount of graphite was formed by titanium-induced diamond graphitization in the Cu-Ti/Dia-2 composite.All these factors deteriorate the heat transfer behavior for the annealed Cu-Ti/Dia composites.Appropriate heat treatment needs to be continually investigated to improve the thermal conductivity of hot-forged CuTi/Dia composite by eliminating deformed structure in the copper matrix with limit/without impacts on the formed TiC interfacial layer.展开更多
Cr-coated diamond/Cu composites were prepared by spark plasma sintering. The effects of sintering pressure, sintering temperature, sintering duration, and Cu powder particle size on the relative density and thermal co...Cr-coated diamond/Cu composites were prepared by spark plasma sintering. The effects of sintering pressure, sintering temperature, sintering duration, and Cu powder particle size on the relative density and thermal conductivity of the composites were investigated in this paper. The influence of these parameters on the properties and microstructures of the composites was also discussed. The results show that the relative density of Cr-coated diamond/Cu reaches ~100% when the composite is gradually compressed to 30 MPa during the heating process. The densification temperature increases from 880 to 915℃ when the diamond content is increased from 45vol% to 60vol%. The densification temperature does not increase further when the content reaches 65vol%. Cu powder particles in larger size are beneficial for increasing the relative density of the composite.展开更多
Pure Cu composites reinforced with diamond particles were fabricated by a high pressure and high temperature （HPHT） infiltration technique. Their microstructural evolution and thermal conductivity were presented as ...Pure Cu composites reinforced with diamond particles were fabricated by a high pressure and high temperature （HPHT） infiltration technique. Their microstructural evolution and thermal conductivity were presented as a function of sintering parameters （temperature, pressure, and time）. The improvement in interfacial bonding strength and the maximum thermM conductivity of 750 W/（m.K） were achieved at the optimal sintering parameters of 1200℃, 6 GPa and 10 min. It is found that the thermal conductivity of the composites depends strongly on sintering pressure. When the sintering pressure is above 6 GPa, the diamond skeleton is detected, which greatly contributes to the excellent thermal conductivity.展开更多
The development of the fast tool servo (FTS) for precision machining was investigated.The micron machining performance of a piezoelectric-assisted FTS on copper alloy was evaluated.The results indicate that the qualit...The development of the fast tool servo (FTS) for precision machining was investigated.The micron machining performance of a piezoelectric-assisted FTS on copper alloy was evaluated.The results indicate that the quality of the microstructure depends mainly on two important factors:the cutting speed (or spindle speed) and the driving frequency of the FTS.The excessive driving frequency increases the formation of burrs.The effect of the clearance angle of the diamond tool on the microstructure machining precision was also investigated.展开更多
Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infilla＇ation technique. The composites show a super high conductivity of 713 W.m-1.K-1 in combination with an extremely low coefficient...Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infilla＇ation technique. The composites show a super high conductivity of 713 W.m-1.K-1 in combination with an extremely low coefficient of thermal expansion （CTE） of 7.72 × 10-6 K-1 （25-100℃）, which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles. By adopting a series of postmachining techniques the composites were made into near-net-shape parts, and an electroless silver coating was also successfully plated on the composites. Finally, their potential applications in the thermal management of fight emitting diodes （LED） were illustrated via prototype examples.展开更多
Diamond particle dispersed copper (Cu) matrix composites were fabricated from the powder mixture composed of diamond, pure-Cu and boron (B) by spark plasma sintering (SPS). The composites were consolidated at 1173 K f...Diamond particle dispersed copper (Cu) matrix composites were fabricated from the powder mixture composed of diamond, pure-Cu and boron (B) by spark plasma sintering (SPS). The composites were consolidated at 1173 K for 600 s by SPS. The reaction between the diamond particle and the Cu matrix in the composite was not confirmed by SEM observation and X-ray diffraction (XRD) analysis. The relative packing density of the Cu/diamond composites increased with B addition and attained 93.2% - 95.8% at the B content range between 1.8 vol.% and 13.8 vol.%. The thermal conductivity of the diamond-dispersed Cu composite drastically increased with B addition and reached the maximum value of 689 W/mK at 7.2 vol% B. Numerous transgranular fractures of diamond particles were observed on bending fracture surfaces of Cu-B/diamond composites. This indicates strong bonding between the diamond particle and the Cu matrix in the composite. The coefficient of thermal expansion of the composite falls in the upper line of Kerner’s model.展开更多
The BLU (back light unit) is the core component of the LCD for notebook, mobile-phone, navigation, as well as large sized TV, PID (public information display), etc. In order to enhance optical efficiency of LCD, optic...The BLU (back light unit) is the core component of the LCD for notebook, mobile-phone, navigation, as well as large sized TV, PID (public information display), etc. In order to enhance optical efficiency of LCD, optical films with the uniform prism patterns have been used for BLU by stacking two films up orthogonally. In this case, light interference-phenomenon occurred such as Morie, wet-out, u-turning, etc. It caused several problems such as low brightness, spots and stripes in LCD. Recently, the high-luminance micro complex prism patterns are actively studied to avoid the light interference-phenomenon and enhance the optical efficiency. In this study, the roll master to manufacture complex micro prism pattern film was machined by using the high precision lathe. The machined patterns on the roll master were 50, 45, 40, 35, 30, 25, 20, 15, 10 and 5 μm in the pitch with 25.0, 22.5, 20.0, 17.5, 15.0, 12.5, 10.0, 7.5, 5.0 and 2.5 μm in the peak height, respectively. The roll was 2 000 mm in length and 320 mm in diameter. The electroplated roll by copper and the natural single crystal diamond tool was used for machining the patterns. The cutting force was measured and analyzed for each cutting condition by using the dynamometer. The chips and the surfaces after being machined were analyzed by SEM and microscope.展开更多
基金supported by the National Natural Science Foundation of China(No.11802125)。
文摘Tungsten was plated on the surface of diamond by using thermal diffusion method.Different process parameters were employed to prepare the composites with tungsten,diamond and copper.The micro morphology of different samples was observed,and the thermal conductivity of samples was measured by laser flash method.The optimal process parameters for preparing diamond/copper composites with high thermal conductivity were investigated.The results indicated that plating tungsten on diamond could modify the interface bonding.When the diamond was plated for 60 min,the coating appeared intact,uniform and flat,and the thermal conductivity of the sample could reach as high as 486 W/(m·K).The integrity and uniformity were more important than thickness for the coating.When the tungsten-plated diamond was further annealed,the metallurgical bonding between the coating and the diamond was enhanced,and the thermal conductivity rose to 559 W/(m·K).
文摘Effects of rare earth element La on the microstructure of Cumatrix diamond tools were researched under the conditions of variousmaterials components and the process parameters in order to improvematerials properties. SEM, XPS and X-ray were used to investigate thefracture section, microstructure and the element valence inmaterials. The Results shown that the combination of rare earthelement La and transition element Ti is advantageous to the bondingstate Between diamond particles and matrix, so it can improve thematerials properties. Suitable sintering temperature is 790 deg. C.
基金supported by the National Natural Science Foundation of China (No. 50971020)the National High-Tech Research and Development Program of China (No. 2008AA03Z505)
文摘The thermal conductivity of diamond/copper composites with bimodal particle sizes was studied. The composites were prepared through pressure infiltration of liquid copper into diamond preforms with a mixture of 40 and 100 pm-size diamonds. The permeability of the preforms with different coarse-to-fine volume ratios of diamonds was investigated. The thermal conductivity of the diamond/copper composites with bimodal size distribution was compared to the theoretical value derived from an analytical model developed by Chu. It is predicted that the diamond/copper composites could reach a higher thermal conductivity and their surface roughness could be improved by applying bimodal diamond particle sizes.
文摘Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred ori- entation of copper grains transformed from （220） to （200）. Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain tmchanged when copper plane （220） grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane （200） grew in the process of co-deposition. It was inferred that copper plane （200） was propitious to the deposition of submicron diamonds.
文摘The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.
文摘The deposition of high-quality diamond films and their adhesion on cemented carbides are strongly influenced by the catalytic effect of cobalt under typical deposition conditions. Decreasing Co content on the surface of the cemented carbide is often used for the diamond film deposition. But the leaching of Co from the WC-Co substrate leading to a mechanical weak surface often causes a poor adhesion. In this paper we adopted an implant copper layer prepared by vaporization to improve the mechanical properties of the Co-leached substrate. The diamond films were grown by microwave plasma chemical vapor deposition from CH4:H2 gas mixture. The cross section and the morphology of the diamond film were characterized by scanning electron microscopy (SEM). The non-diamond content in the film was analyzed by Raman spectroscopy. The effects of pretreatment on the concentrations of Co and Cu near the interfacial region were examined by energy dispersive spectrum (EDS) equipped with SEM. The adhesion of the diamond on the substrate was evaluated with a Rockwell-type hardness tester. The results indicate that the diamond films prepared with implant copper layer have a good adhesion to the cemented carbide substrate due to the recovery of the mechanical properties of the Co-depleted substrate after the copper implantation and the formation of less amorphous carbon between the substrate and the diamond film.
文摘The electroless copper deposition on both pure and Cr-coated diamond particles was stud- ied to produce copper/diamond composites for electronic packaging materials. The particles were characterized and the mechanism of product formation was investigated through scanning electron microscopy （SEM）, energy dispersive spectroscopy （EDS）, X-ray diffraction （XRD）, and X-ray photoelectron spectra （XPS）. The particle coating thickness was measured using optical micro- graphs. The diamond particles got uniform coating thickness of copper crystals layers. This method provided an excellent base for the fabrication of metal-based composites using cheap equipments, and was less time consuming, nature friendly and economical compared with other methods of dia- mond surface metallization.
基金supported by the National Natural Science Foundation of China (No.50971020) National High-Tech Research and Development Program of China (No.2008AA03Z505)
文摘Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature （HPHT） sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding strength and thermo-physical properties of the composites were achieved using an atomized copper alloy with minor additions of Co, Cr, 13, and Ti. The thermal conductivity （TC） oh- mined exhibited as high as 688 W.m-1.K-1, but also as low as 325 W.m-1.K-l. A large variation in TC can be rationalized by the discrepancy of diamond-matrix interfacial bonding. It was found from fractography that preferential bonding between diamond and the Cu-alloy matrix occurred only on the diamond {100} faces. EDS analysis and Raman spectra suggested that selective interfacial bonding may be attributed to amorphous carbon increasing the wettability between diamond and the Cu-alloy matrix. Amorphous carbon was found to significantly affect the TC of the composite by interface modification.
基金supported by the Air Force Office of Scientific Research under award number FA2386-17-14025。
文摘A Cu-1.5 wt.%Ti/Diamond(55 vol.%)composite was fabricated by hot forging from powder mixture of copper,titanium and diamond powders at 1050?C.A nano-thick TiC interfacial layer was formed between the diamond particle and copper matrix during forging,and it has an orientation relationship of(111)TiC//(002)Cu&[110]TiC//[110]Cuwith the copper matrix.HRTEM analysis suggests that TiC is semicoherently bond with copper matrix,which helps reduce phonon scattering at the TiC/Cu interface and facilitates the heat transfer,further leading to the hot-forged copper/diamond composite(referred as to Cu-Ti/Dia-0)has a thermal conductivity of 410 W/m K,and this is about 74%of theoretical thermal conductivity of hot-forged copper/composite(552 W/m K).However,the formation of thin amorphous carbon layer in diamond particle(next to the interfacial TiC layer)and deformed structure in the copper matrix have adverse effect on the thermal conductivity of Cu-Ti/Dia-0 composite.800℃-annealing eliminates the discrepancy in TiC interface morphology between the diamond-{100}and-{111}facets of Cu-Ti/Dia-0 composite,but causes TiC particles coarsening and agglomerating for the Cu-Ti/Dia-2 composite and interfacial layer cracking and spallation for the Cu-Ti/Dia-1 composite.In addition,a large amount of graphite was formed by titanium-induced diamond graphitization in the Cu-Ti/Dia-2 composite.All these factors deteriorate the heat transfer behavior for the annealed Cu-Ti/Dia composites.Appropriate heat treatment needs to be continually investigated to improve the thermal conductivity of hot-forged CuTi/Dia composite by eliminating deformed structure in the copper matrix with limit/without impacts on the formed TiC interfacial layer.
基金financially supported by the National Natural Science Foundation of China (No. 51374028)
文摘Cr-coated diamond/Cu composites were prepared by spark plasma sintering. The effects of sintering pressure, sintering temperature, sintering duration, and Cu powder particle size on the relative density and thermal conductivity of the composites were investigated in this paper. The influence of these parameters on the properties and microstructures of the composites was also discussed. The results show that the relative density of Cr-coated diamond/Cu reaches ~100% when the composite is gradually compressed to 30 MPa during the heating process. The densification temperature increases from 880 to 915℃ when the diamond content is increased from 45vol% to 60vol%. The densification temperature does not increase further when the content reaches 65vol%. Cu powder particles in larger size are beneficial for increasing the relative density of the composite.
基金supported by the National Natural Science Foundation of China (No. 50971020)the National High-Tech Research and Development Program of China (No. 2008AA03Z505)
文摘Pure Cu composites reinforced with diamond particles were fabricated by a high pressure and high temperature （HPHT） infiltration technique. Their microstructural evolution and thermal conductivity were presented as a function of sintering parameters （temperature, pressure, and time）. The improvement in interfacial bonding strength and the maximum thermM conductivity of 750 W/（m.K） were achieved at the optimal sintering parameters of 1200℃, 6 GPa and 10 min. It is found that the thermal conductivity of the composites depends strongly on sintering pressure. When the sintering pressure is above 6 GPa, the diamond skeleton is detected, which greatly contributes to the excellent thermal conductivity.
基金Project(2010-0008-277)supported by NCRC(National Core Research Center)Program of the Ministry of Education,Science and Technology,KoreaProject supported by"Development of Micro Feature Machining System on Large Surface and Core Technologies for Measurement & Inspection"of Ministry of Knowledge Economy,Korea
文摘The development of the fast tool servo (FTS) for precision machining was investigated.The micron machining performance of a piezoelectric-assisted FTS on copper alloy was evaluated.The results indicate that the quality of the microstructure depends mainly on two important factors:the cutting speed (or spindle speed) and the driving frequency of the FTS.The excessive driving frequency increases the formation of burrs.The effect of the clearance angle of the diamond tool on the microstructure machining precision was also investigated.
基金supported by the National Natural Science Foundation of China (No. 50971020)the National High-Tech Research and Development Program of China (No. 2008AA03Z505)
文摘Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infilla＇ation technique. The composites show a super high conductivity of 713 W.m-1.K-1 in combination with an extremely low coefficient of thermal expansion （CTE） of 7.72 × 10-6 K-1 （25-100℃）, which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles. By adopting a series of postmachining techniques the composites were made into near-net-shape parts, and an electroless silver coating was also successfully plated on the composites. Finally, their potential applications in the thermal management of fight emitting diodes （LED） were illustrated via prototype examples.
文摘Diamond particle dispersed copper (Cu) matrix composites were fabricated from the powder mixture composed of diamond, pure-Cu and boron (B) by spark plasma sintering (SPS). The composites were consolidated at 1173 K for 600 s by SPS. The reaction between the diamond particle and the Cu matrix in the composite was not confirmed by SEM observation and X-ray diffraction (XRD) analysis. The relative packing density of the Cu/diamond composites increased with B addition and attained 93.2% - 95.8% at the B content range between 1.8 vol.% and 13.8 vol.%. The thermal conductivity of the diamond-dispersed Cu composite drastically increased with B addition and reached the maximum value of 689 W/mK at 7.2 vol% B. Numerous transgranular fractures of diamond particles were observed on bending fracture surfaces of Cu-B/diamond composites. This indicates strong bonding between the diamond particle and the Cu matrix in the composite. The coefficient of thermal expansion of the composite falls in the upper line of Kerner’s model.
基金Project(R15-2006-022-01001-0) supported by the National Core Research Center Program from MOST and KOSEF
文摘The BLU (back light unit) is the core component of the LCD for notebook, mobile-phone, navigation, as well as large sized TV, PID (public information display), etc. In order to enhance optical efficiency of LCD, optical films with the uniform prism patterns have been used for BLU by stacking two films up orthogonally. In this case, light interference-phenomenon occurred such as Morie, wet-out, u-turning, etc. It caused several problems such as low brightness, spots and stripes in LCD. Recently, the high-luminance micro complex prism patterns are actively studied to avoid the light interference-phenomenon and enhance the optical efficiency. In this study, the roll master to manufacture complex micro prism pattern film was machined by using the high precision lathe. The machined patterns on the roll master were 50, 45, 40, 35, 30, 25, 20, 15, 10 and 5 μm in the pitch with 25.0, 22.5, 20.0, 17.5, 15.0, 12.5, 10.0, 7.5, 5.0 and 2.5 μm in the peak height, respectively. The roll was 2 000 mm in length and 320 mm in diameter. The electroplated roll by copper and the natural single crystal diamond tool was used for machining the patterns. The cutting force was measured and analyzed for each cutting condition by using the dynamometer. The chips and the surfaces after being machined were analyzed by SEM and microscope.
