期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
JAI Introduction
1
《Journal of Automation and Intelligence》 2025年第1期F0002-F0002,共1页
Artificial intelligence(AI) is almost everywhere due to the rapid development of modern technology and popularity of intelligent devices.While control theory and machine learning techniques as two enabling technologie... Artificial intelligence(AI) is almost everywhere due to the rapid development of modern technology and popularity of intelligent devices.While control theory and machine learning techniques as two enabling technologies have shown enormous power in their own right,a rapprochement of them is required to handle nonlinearity,uncertainty and scalability induced by high complexity of modern systems,huge quantity of real-time data,and large scale of agent networks. 展开更多
关键词 control theory machinelearning techniques artificial intelligence al intelligent deviceswhile controltheory NONLINEARITY machinlearning modern technology agent networks
在线阅读 下载PDF
JAI Introduction
2
《Journal of Automation and Intelligence》 2025年第2期F0002-F0002,共1页
Artificial intelligence(AI)is almost everywhere due to the rapid development of modern technology and popularity of intelligent devices.While control theory and machine learning techniques as two enabling technologies... Artificial intelligence(AI)is almost everywhere due to the rapid development of modern technology and popularity of intelligent devices.While control theory and machine learning techniques as two enabling technologies have shown enormous power in their own right,a rapprochement of them is required to handle nonlinearity,uncertainty and scalability induced by high complexity of modern systems,huge quantity of real-time data,and large scale of agent networks. 展开更多
关键词 machine learning intelligent deviceswhile control theory modern systemshuge modern technology agent networks artificial intelligence ai artificial intelligence
在线阅读 下载PDF
JAI Introduction
3
《Journal of Automation and Intelligence》 2025年第3期F0002-F0002,共1页
Artificial intelligence(AI)is almost everywhere due to the rapid development of modern technology and popularity of intelligent devices.While control theory and machine learning techniques as two enabling technologies... Artificial intelligence(AI)is almost everywhere due to the rapid development of modern technology and popularity of intelligent devices.While control theory and machine learning techniques as two enabling technologies have shown enormous power in their own right,a rapprochement of them is required to handle nonlinearity,uncertainty and scalability induced by high complexity of modern systems,huge quantity of real-time data,and large scale of agent networks. 展开更多
关键词 machine learning intelligent deviceswhile control theory modern systemshuge modern technology agent networks artificial intelligence ai artificial intelligence
在线阅读 下载PDF
Tunneling Magnetoresistance Effect in Altermagnetic Tunnel Junctions with g-Wave Splitting
4
作者 Xinlu Li Meng Zhu +3 位作者 Jianting Dong Kun Wu Fanxing Zheng Jia Zhang 《Chinese Physics Letters》 2025年第10期144-165,共22页
Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magneti... Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magnetic transition temperatures or weak spin splitting,the recently discovered metal CrSb,with high N′eel temperature(T_(N)=710 K)and significant spin-splitting due to its unique spin space group,provides a robust platform for remarkable tunneling magnetoresistance(TMR)in collinear all-antiferromagnetic tunnel junctions(AATJs).This study systematically investigates the spin-polarized Fermi surface of CrSb and spin-dependent electron transport in CrSb-based AATJs.The CrSb/β-InSe/CrSb junction with a three-monolayer InSe barrier exhibits a TMR ratio of approximately 290%,with energy-dependent analysis revealing TMR ratios that may exceed 850%when considering the shift of the Fermi energy.We also demonstrate the angle-dependent TMR of CrSb-based AATJs by adjusting N′eel vector orientations.Our findings might provide strong theoretical support for CrSb as a versatile building block for all-antiferromagnetic memory devices. 展开更多
关键词 G wave splitting antiferromagnetic spintronic deviceswhile tunneling magnetoresistance tmr Alt magnets low magnetic transition temperatures spin splittingthe tunneling magnetoresistance Crsb
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部