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Crystal Growth of InGaAs by Thermal Gradient,Vertical and Rotational Bridgman Methods
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作者 Teltsou OZAWA Masahiko ANDO +1 位作者 Yasuhiro HAYAKAWA Masashi KUWAGAWA 《人工晶体学报》 CSCD 1991年第3期242-242,共1页
ZnSe is a sereiconductor with a wide direct energy gap(2.7 eV)at room temperature and is suitable for blue light emitting diodes,lasers and other opto electronic devices.GaAs has been mainly used as a substrate of ZnS... ZnSe is a sereiconductor with a wide direct energy gap(2.7 eV)at room temperature and is suitable for blue light emitting diodes,lasers and other opto electronic devices.GaAs has been mainly used as a substrate of ZnSe.However.there exists a 0.27%lattice ismatch between them.This mismateh causes the generation of many dislocations and defects,and as a result the quality of ZnSe layers becomes poor. 展开更多
关键词 crystal growth INGAAS dislocations opto electronic devicesgaas blue light emitting diodeslasers ZNSE lattice mismatch thermal gradient
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