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Structural diversity and photocurrent responses of multi-component chalcogenidometalates
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作者 Chang Liu Wenjing Tian +4 位作者 Mao-Yin Ran Pan Gao Panpan Jing Yi Liu Hua Lin 《Inorganic Chemistry Frontiers》 2025年第8期3018-3040,共23页
Multi-component chalcogenidometalates have garnered significant attention due to their promising applications in solar energy conversion devices,including photodetectors,solar cells,and photocatalysts.Photocurrent res... Multi-component chalcogenidometalates have garnered significant attention due to their promising applications in solar energy conversion devices,including photodetectors,solar cells,and photocatalysts.Photocurrent response is not only a fundamental property of photodetectors but also serves as a key indicator of the solar energy conversion efficiency in potential semiconductor devices.Despite the growing interest,a clear and universal guideline for designing chalcogenide materials with excellent photocurrent response remains elusive,primarily due to the substantial variations in their chemical compositions and crystal structures.In this review,we present a comprehensive compilation of reported multi-component chalcogenidometalates,including main group chalcogenides with binary and ternary anionic frameworks,and discuss their photocurrent response performance.Additionally,we also highlight other special chalcogenide systems,focusing on their photocurrent response characteristics.For the first time,we systematically summarize the intricate relationships between chemical composition,crystal structure,electronic band structure,and photocurrent response in these materials.Finally,we believe that this review provides a valuable structural perspective on the photocurrent response of multi-component chalcogenidometalates,offering useful insights for the design and application of advanced solar energy conversion materials. 展开更多
关键词 chalcogenide materials solar energy conversion photocatalystsphotocurrent response structural diversity photocurrent responses solar energy conversion devicesincluding multi component chalcogenidometalates semiconductor devicesdespite
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Creating Ferroelectricity and Ultrahigh-Density Polar Skyrmion in Paraelectric Perovskite Oxide Monolayers by Moiré Engineering
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作者 Tao Xu Tao Qian +5 位作者 Jiafei Pang Jingtong Zhang Sheng Li Ri He Jie Wang Takahiro Shimada 《Research》 2025年第4期640-647,共8页
Atomic-scale polar topologies such as skyrmions offer important potential as technological paradigms for future electronic devices.Despite recent advances in the exploration of topological domains in complicated perov... Atomic-scale polar topologies such as skyrmions offer important potential as technological paradigms for future electronic devices.Despite recent advances in the exploration of topological domains in complicated perovskite oxide superlattices,these exotic ferroic orders are unavoidably disrupted at the atomic scale due to intrinsic size effects.Here,based on first-principles calculations,we propose a new strategy to design robust ferroelectricity in atomically thin films by properly twisting 2 monolayers of centrosymmetric SrTiO_(3).Surprisingly,the emerged polarization vectors curl in the plane,forming a polar skyrmion lattice with each skyrmion as small as 1 nm,representing the highest polar skyrmion density to date.The emergent ferroelectricity originates from strong interlayer coupling effects and the resulting unique strain fields with obvious ion displacements,contributing to electric polarization comparable to that of PbTiO_(3).Moreover,we observe ultraflat bands(band width of less than 5 meV)at the valence band edge across a wide range of twist angles,which show widths that are smaller than those of common twisted bilayers of 2-dimensional materials.The present study not only overcomes the critical size limitation for ferroelectricity but also reveals a novel approach for achieving atomic-scale polar topologies,with important potential for applications in skyrmion-based ultrahigh-density memory technologies. 展开更多
关键词 robust ferroelectricity electronic devicesdespite exploration topological domains atomically thin films twisting monolayers technological paradigms perovskite oxide superlatticesthese FERROELECTRICITY
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