As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.Ho...As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.展开更多
We introduce the relationship between excess noise in Optoelectronic Coupled Devices (OCDs) and their interior defects and explain how low-fiequency noise can be used to estimate their reliability.Using concepts from ...We introduce the relationship between excess noise in Optoelectronic Coupled Devices (OCDs) and their interior defects and explain how low-fiequency noise can be used to estimate their reliability.Using concepts from the biological immune system and its process of identifying invaders,we present a system for estimation of the reliability of OCDs.The system has expressions for the antigen (excess noise),lymphocyte (criterion) and the role of the lymphocyte eliminating unreliable devices. A genetic algorithm was used to estimate the components parameters of the noise spectrum for estimating the reliability of OCDs.The experimental results demonstrated that this method is reliable,adaptable and practical.展开更多
Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of H...Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.展开更多
The input/output(I/O)pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge(ESD)protection devices.It is difficult for ...The input/output(I/O)pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge(ESD)protection devices.It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier(NBL-GCSCR)manufactured by the 0.18µm standard bipolar-CMOS-DMOS(BCD)process to meet this need.Therefore,we propose an on-chip integrated novel deep N-well gate-controlled SCR(DNW-GCSCR)with a high failure level to effectively solve the problems based on the same semiconductor process.Technology computer-aided design(TCAD)simulation is used to analyze the device characteristics.SCRs are tested by transmission line pulses(TLP)to obtain accurate ESD parameters.The holding voltage(24.03 V)of NBL-GCSCR with the longitudinal bipolar junction transistor(BJT)path is significantly higher than the holding voltage(5.15 V)of DNW-GCSCR with the lateral SCR path of the same size.However,the failure current of the NBL-GCSCR device is 1.71 A,and the failure current of the DNW-GCSCR device is 20.99 A.When the gate size of DNW-GCSCR is increased from 2µm to 6µm,the holding voltage is increased from 3.50 V to 8.38 V.The optimized DNW-GCSCR(6µm)can be stably applied on target readout circuits for on-chip electrostatic discharge protection.展开更多
In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Scho...In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.展开更多
The exceptional physical properties of gallium nitride(GaN)position GaNbased power devices as leading candidates for next‐generation high‐efficiency smart power conversion systems.However,GaN's multi‐component ...The exceptional physical properties of gallium nitride(GaN)position GaNbased power devices as leading candidates for next‐generation high‐efficiency smart power conversion systems.However,GaN's multi‐component nature results in a high density of epitaxial defects,whereas the introduction of dielectric layers further contributes to severe interface states and dielectric traps.These factors collectively impair reliability,manifesting as threshold voltage instability and current collapse,which pose significant barriers to the advancement of GaN‐based electronics.Establishing the intrinsic relationship between device reliability and defects is crucial for understanding and addressing reliability degradation issue.Deep level transient spectroscopy(DLTS)offers valuable insights by revealing defect‐induced changes in electrical parameters during the capture and emission processes under varying biases,thereby elucidating the influence of defects from GaN buffer layers,AlGaN barriers,dielectric layer,and even at dielectric/(Al)GaN interfaces.This research aims to provide a foundational understanding of reliability degradation whereas further enabling enhancements in device performance from the perspectives of epitaxial growth and process preparation,ultimately striving to improve the reliability of GaN‐based devices and unlock their full potential for practical applications.展开更多
Nanomagnet logic（NML） devices have been proposed as one of the best candidates for the next generation of integrated circuits thanks to its substantial advantages of nonvolatility, radiation hardening and potentiall...Nanomagnet logic（NML） devices have been proposed as one of the best candidates for the next generation of integrated circuits thanks to its substantial advantages of nonvolatility, radiation hardening and potentially low power. In this article, errors of nanomagnetic interconnect wire subjected to magnet edge imperfections have been evaluated for the purpose of reliable logic propagation. The missing corner defects of nanomagnet in the wire are modeled with a triangle, and the interconnect fabricated with various magnetic materials is thoroughly investigated by micromagnetic simulations under different corner defect amplitudes and device spacings. The results show that as the defect amplitude increases, the success rate of logic propagation in the interconnect decreases. More results show that from the interconnect wire fabricated with materials, iron demonstrates the best defect tolerance ability among three representative and frequently used NML materials, also logic transmission errors can be mitigated by adjusting spacing between nanomagnets. These findings can provide key technical guides for designing reliable interconnects.展开更多
The development of efficient and stable perovskite solar cells(PSCs)continues to face commercialization challenges,with long-term operational stability remaining a critical bottleneck despite considerable progress in ...The development of efficient and stable perovskite solar cells(PSCs)continues to face commercialization challenges,with long-term operational stability remaining a critical bottleneck despite considerable progress in power conversion efficiency(PCE).This challenge is particularly pronounced at the hole-selective interface,where high-performance contacts frequently lack the necessary robustness,thereby limiting device reliability and durability.The recent development of stable organic diradical self-assembled monolayers(SAMs)represents a significant advancement in interfacial contact engineering for perovskite devices.展开更多
AlGaInP-based red miniaturized light-emitting diode(mini-LED)is a key component in realizing a full-color display.One of the main obstacles originates from interfacial recombination at the AlGaInP-SiO_(2)interface,and...AlGaInP-based red miniaturized light-emitting diode(mini-LED)is a key component in realizing a full-color display.One of the main obstacles originates from interfacial recombination at the AlGaInP-SiO_(2)interface,and it is crucial to develop effective surface passivation strategies to achieve higher external quantum efficiency(EQE)in AlGaInP-based red mini-LEDs.Here,we demonstrated AlGaInP-based red flip-chip mini-LEDs with an AlN passivation layer via atomic layer deposition(ALD).Utilizing a Monte Carlo ray tracing method,we investigated the effects of the SiO_(2)passivation layer and the Al N passivation layer on the optical performances of mini-LEDs.Since the refractive index of AlN is between AlGaInP and SiO_(2),the total internal reflection is alleviated and light extraction is enhanced.Unexpectedly,the AlN passivation layer also contributes to improving the current spreading ability of mini-LEDs,which is demonstrated by the near-field light distribution.Benefiting from superior light extraction and improved current spreading,the EQE of the mini-LED with an AlN passivation layer realizes an increment of 16.1%at 5 mA,in comparison to the mini-LED with a SiO_(2)passivation layer.The EQE of miniLEDs with an AlN passivation layer reaches a competitive value of 22.3%at 5 mA,surpassing previously reported AlGaInPbased red mini-LEDs.Moreover,the high temperature-humidity aging test exhibits that the AlN passivation layer effectively enhances the reliability of mini-LEDs.This work provides guidance for high-performance AlGaInP-based red flip-chip miniLEDs design and manufacture.展开更多
Organic spin valve (OSV), one of the most promising and representative devices involving spin injection, transport and detection, has drawn tremendous attention owing to their ultra-long spin relaxation time in the fi...Organic spin valve (OSV), one of the most promising and representative devices involving spin injection, transport and detection, has drawn tremendous attention owing to their ultra-long spin relaxation time in the field of molecular spintronics. Since the first demonstration of truly worked vertical OSV device in 2004, efforts in enhancement of high performance and pursuit of spin-related nature have been devoted in related field. It offers a new opportunity to develop the integrated flexible multi-functional arrays based on spintronics in the future. However, the unreliable working state in OSVs due to the lack of exploration on interface control will cause severe impact on the performance evaluation and further restrict their practical application. Herein, we focus on the recent progress in strategies for reliable fabrication and evaluation of typical OSVs in vertical configuration. Firstly, the challenges in protection of two spin interface properties and identification of spin-valve-like signals were proposed. Then, three points for attention including selection of bottom electrodes, optimization of organic spacer, and prevention of metal penetration to improve the device performance and reliability were mentioned. Particularly, various modified strategies to solve the “dead layer” issue were highlighted. Furthermore, we discussed the general protocols in the reliable evaluation of OSVs’ performance and transport mechanism identification. Notably, several key fundamentals resulting in spurious magnetoresistance (MR) response were illustrated. Finally, we also highlighted the future perspectives on spintronic devices of organic materials.展开更多
According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simu- l...According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simu- lates the mono-degradation process of each feature degradation; using the copula function describes the correlation among these feature degradations. The Wiener process and parameters in the copula function are considered to associate with the temperature, and their relationships can be represented by the converted equations. Through the maximum likelihood estimation, the parameters in the Wiener process can be found; introducing Kendall＇s tau, those in the copula function can be estimated. By conducting the regression analyses of the estimated values of the parameters in each stress, their corresponding converted equations can be shown. Based on the storage test data of bipolar transistors, with the estimation method, the storage lifetime is found. The findings show that the model is reasonable for the prediction of storage lifetime.展开更多
基金supported by the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT),South Korea(RS-2024-00421181)financially supported in part by National R&D Program(2021M3H4A3A02086430)through NRF(National Research Foundation of Korea)funded by Ministry of Science and ICT+2 种基金the National Research Council of Science&Technology(NST)grant by the Korea government(MSIT)(No.GTL25021-210)The Inter-University Semiconductor Research Center,Institute of Engineering Research,and Soft Foundry Institute at Seoul National University provided research facilities for this workhe grant by the National Research Foundation of Korea(NSF)supported by the Korea government(MIST)(RS-2025-16903034)。
文摘As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.
基金by NSFC (No. 60906034)General Armament Department of China
文摘We introduce the relationship between excess noise in Optoelectronic Coupled Devices (OCDs) and their interior defects and explain how low-fiequency noise can be used to estimate their reliability.Using concepts from the biological immune system and its process of identifying invaders,we present a system for estimation of the reliability of OCDs.The system has expressions for the antigen (excess noise),lymphocyte (criterion) and the role of the lymphocyte eliminating unreliable devices. A genetic algorithm was used to estimate the components parameters of the noise spectrum for estimating the reliability of OCDs.The experimental results demonstrated that this method is reliable,adaptable and practical.
文摘Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.
基金Project supported by the National Natural Science Foundation of China(No.61827812)the Huxiang High-Level Talents Gathering Project of Science and Technology Department of Hunan Province,China(No.2019RS1037)+1 种基金the Innovation Project of Science and Technology Department of Hunan Province,China(Nos.2020GK2018,2019GK4016,and 2020RC1003)the Postgraduate Scientific Research Innovation Project of Hunan Province,China(No.CX20200478)。
文摘The input/output(I/O)pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge(ESD)protection devices.It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier(NBL-GCSCR)manufactured by the 0.18µm standard bipolar-CMOS-DMOS(BCD)process to meet this need.Therefore,we propose an on-chip integrated novel deep N-well gate-controlled SCR(DNW-GCSCR)with a high failure level to effectively solve the problems based on the same semiconductor process.Technology computer-aided design(TCAD)simulation is used to analyze the device characteristics.SCRs are tested by transmission line pulses(TLP)to obtain accurate ESD parameters.The holding voltage(24.03 V)of NBL-GCSCR with the longitudinal bipolar junction transistor(BJT)path is significantly higher than the holding voltage(5.15 V)of DNW-GCSCR with the lateral SCR path of the same size.However,the failure current of the NBL-GCSCR device is 1.71 A,and the failure current of the DNW-GCSCR device is 20.99 A.When the gate size of DNW-GCSCR is increased from 2µm to 6µm,the holding voltage is increased from 3.50 V to 8.38 V.The optimized DNW-GCSCR(6µm)can be stably applied on target readout circuits for on-chip electrostatic discharge protection.
基金supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012)Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073)Shenzhen Science and Technology Program(JCYJ20220818102809020).
文摘In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.
基金National Key Research and Development Program of China,Grant/Award Number:2022YFB3604400CAS‐Croucher Funding Scheme,Grant/Award Number:CAS22801+4 种基金Beijing Municipal Science and Technology Commission,Grant/Award Numbers:Z201100008420009,Z211100007921018University of CASYouth Innovation Promotion Association of the Chinese Academy of SciencesNational Natural Science Foundation of China,Grant/Award Numbers:62004213,62074161,62304252,62334012,U20A20208IMECAS‐HKUST‐Joint Laboratory of Microelectronics。
文摘The exceptional physical properties of gallium nitride(GaN)position GaNbased power devices as leading candidates for next‐generation high‐efficiency smart power conversion systems.However,GaN's multi‐component nature results in a high density of epitaxial defects,whereas the introduction of dielectric layers further contributes to severe interface states and dielectric traps.These factors collectively impair reliability,manifesting as threshold voltage instability and current collapse,which pose significant barriers to the advancement of GaN‐based electronics.Establishing the intrinsic relationship between device reliability and defects is crucial for understanding and addressing reliability degradation issue.Deep level transient spectroscopy(DLTS)offers valuable insights by revealing defect‐induced changes in electrical parameters during the capture and emission processes under varying biases,thereby elucidating the influence of defects from GaN buffer layers,AlGaN barriers,dielectric layer,and even at dielectric/(Al)GaN interfaces.This research aims to provide a foundational understanding of reliability degradation whereas further enabling enhancements in device performance from the perspectives of epitaxial growth and process preparation,ultimately striving to improve the reliability of GaN‐based devices and unlock their full potential for practical applications.
基金supported by the National Natural Science Foundation of China(No.61302022)the Scientific Research Foundation for Postdoctor of Air Force Engineering University(Nos.2015BSKYQD03,2016KYMZ06)
文摘Nanomagnet logic（NML） devices have been proposed as one of the best candidates for the next generation of integrated circuits thanks to its substantial advantages of nonvolatility, radiation hardening and potentially low power. In this article, errors of nanomagnetic interconnect wire subjected to magnet edge imperfections have been evaluated for the purpose of reliable logic propagation. The missing corner defects of nanomagnet in the wire are modeled with a triangle, and the interconnect fabricated with various magnetic materials is thoroughly investigated by micromagnetic simulations under different corner defect amplitudes and device spacings. The results show that as the defect amplitude increases, the success rate of logic propagation in the interconnect decreases. More results show that from the interconnect wire fabricated with materials, iron demonstrates the best defect tolerance ability among three representative and frequently used NML materials, also logic transmission errors can be mitigated by adjusting spacing between nanomagnets. These findings can provide key technical guides for designing reliable interconnects.
文摘The development of efficient and stable perovskite solar cells(PSCs)continues to face commercialization challenges,with long-term operational stability remaining a critical bottleneck despite considerable progress in power conversion efficiency(PCE).This challenge is particularly pronounced at the hole-selective interface,where high-performance contacts frequently lack the necessary robustness,thereby limiting device reliability and durability.The recent development of stable organic diradical self-assembled monolayers(SAMs)represents a significant advancement in interfacial contact engineering for perovskite devices.
基金supported by the Wuhan Joint Innovation Laboratory of Advanced Display Industry(Grant No.2024010902040449)the National Natural Science Foundation of China(Grant Nos.52075394,52475601)+4 种基金the National Key Research and Development Program of China(Grant Nos.2022YFB3603603,2021YFB3600204)the National Youth Talent Support Program,the Key Research and Development Program of Hubei Province(Grant No.2023BAB137)the Knowledge Innovation Program of Wuhan-Basic Research(Grant No.2023010201010068)the Science and Technology Major Project of Hubei Province(Grant No.2024BAA004)the Science and Technology Major Project of Wuhan(Grant No.2024010702020024)。
文摘AlGaInP-based red miniaturized light-emitting diode(mini-LED)is a key component in realizing a full-color display.One of the main obstacles originates from interfacial recombination at the AlGaInP-SiO_(2)interface,and it is crucial to develop effective surface passivation strategies to achieve higher external quantum efficiency(EQE)in AlGaInP-based red mini-LEDs.Here,we demonstrated AlGaInP-based red flip-chip mini-LEDs with an AlN passivation layer via atomic layer deposition(ALD).Utilizing a Monte Carlo ray tracing method,we investigated the effects of the SiO_(2)passivation layer and the Al N passivation layer on the optical performances of mini-LEDs.Since the refractive index of AlN is between AlGaInP and SiO_(2),the total internal reflection is alleviated and light extraction is enhanced.Unexpectedly,the AlN passivation layer also contributes to improving the current spreading ability of mini-LEDs,which is demonstrated by the near-field light distribution.Benefiting from superior light extraction and improved current spreading,the EQE of the mini-LED with an AlN passivation layer realizes an increment of 16.1%at 5 mA,in comparison to the mini-LED with a SiO_(2)passivation layer.The EQE of miniLEDs with an AlN passivation layer reaches a competitive value of 22.3%at 5 mA,surpassing previously reported AlGaInPbased red mini-LEDs.Moreover,the high temperature-humidity aging test exhibits that the AlN passivation layer effectively enhances the reliability of mini-LEDs.This work provides guidance for high-performance AlGaInP-based red flip-chip miniLEDs design and manufacture.
基金The authors acknowledge financial support from the National Key R&D Program of China (Nos. 2016YFB0401100 and 2017YFA0204503)the National Natural Science Foundation of China (Nos. 52003190, 51633006, 91833306, 21875158, 51703159, and 51733004).
文摘Organic spin valve (OSV), one of the most promising and representative devices involving spin injection, transport and detection, has drawn tremendous attention owing to their ultra-long spin relaxation time in the field of molecular spintronics. Since the first demonstration of truly worked vertical OSV device in 2004, efforts in enhancement of high performance and pursuit of spin-related nature have been devoted in related field. It offers a new opportunity to develop the integrated flexible multi-functional arrays based on spintronics in the future. However, the unreliable working state in OSVs due to the lack of exploration on interface control will cause severe impact on the performance evaluation and further restrict their practical application. Herein, we focus on the recent progress in strategies for reliable fabrication and evaluation of typical OSVs in vertical configuration. Firstly, the challenges in protection of two spin interface properties and identification of spin-valve-like signals were proposed. Then, three points for attention including selection of bottom electrodes, optimization of organic spacer, and prevention of metal penetration to improve the device performance and reliability were mentioned. Particularly, various modified strategies to solve the “dead layer” issue were highlighted. Furthermore, we discussed the general protocols in the reliable evaluation of OSVs’ performance and transport mechanism identification. Notably, several key fundamentals resulting in spurious magnetoresistance (MR) response were illustrated. Finally, we also highlighted the future perspectives on spintronic devices of organic materials.
文摘According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simu- lates the mono-degradation process of each feature degradation; using the copula function describes the correlation among these feature degradations. The Wiener process and parameters in the copula function are considered to associate with the temperature, and their relationships can be represented by the converted equations. Through the maximum likelihood estimation, the parameters in the Wiener process can be found; introducing Kendall＇s tau, those in the copula function can be estimated. By conducting the regression analyses of the estimated values of the parameters in each stress, their corresponding converted equations can be shown. Based on the storage test data of bipolar transistors, with the estimation method, the storage lifetime is found. The findings show that the model is reasonable for the prediction of storage lifetime.
