传统的功率分配算法由于复杂的矩阵运算与迭代所造成的高时延,在实际通信中实时获取信道信息十分困难,当前重要的研究方向是在系统性能和计算复杂度之间找到有效平衡。针对终端直通(Device-to-Device,D2D)用户与蜂窝用户的联合功率分配...传统的功率分配算法由于复杂的矩阵运算与迭代所造成的高时延,在实际通信中实时获取信道信息十分困难,当前重要的研究方向是在系统性能和计算复杂度之间找到有效平衡。针对终端直通(Device-to-Device,D2D)用户与蜂窝用户的联合功率分配问题,提出一种异构功率控制图神经网络(Heterogeneous Power Control Graph Neural Network,HPCGNN)算法,旨在最大化所有用户的加权和速率。首先通过构建干扰的异构图,将信道和噪声等信息嵌入到图的节点和边;再由HPCGNN完成消息传递和更新,采用无监督学习方式优化深度神经网络(Deep Neural Network,DNN)参数,最终得到最佳的功率分配。仿真结果表明,相较于其他深度学习算法,所提算法能够有效提高系统性能,且在损失5%性能下相较分式规划(Fractional Programming,FP)能降低82%~98%的时间复杂度。展开更多
Considering that modern mobile terminals possess the capability to detect users'proximity,and offer means to directly communicate and share content with the people in close area,Device-to-Device(D2D)based Proximit...Considering that modern mobile terminals possess the capability to detect users'proximity,and offer means to directly communicate and share content with the people in close area,Device-to-Device(D2D)based Proximity Services(ProSe)have recently witnessed great development,which enable users to seek for and utilize relevant value in their physical proximity,and are capable to create numerous new mobile service opportunities.However,without a breakthrough in battery technology,the energy will be the biggest limitation for ProSe.Through incorporating the features of ProSe(D2D communication technologies,abundant built-in sensors,localization-dependent,and context-aware,etc.),this paper thoroughly investigates the energy-efficient architecture and technologies for ProSe from the following four aspects:underlying networking technology,localization,application and architecture features,context-aware and user interactions.Besides exploring specific energy-efficient schemes pertaining to each aspect,this paper offers a perspective for research and applications.In brief,through classifying,summarizing and optimizing the multiple efforts on studying,modeling and reducing energy consumption for ProSe on mobile devices,the paper would provide guide for developers to build energy-efficient ProSe.展开更多
对D2D(Device to Device)通信系统的隐蔽通信问题进行研究,提出了一种基于智能反射面(Intelligent Reflecting Surfaces,IRS)的D2D通信系统,该系统采用双IRS模式。首先分析了各信号的信干噪比(SINR)和各自的期望值,并据此推导出系统遍...对D2D(Device to Device)通信系统的隐蔽通信问题进行研究,提出了一种基于智能反射面(Intelligent Reflecting Surfaces,IRS)的D2D通信系统,该系统采用双IRS模式。首先分析了各信号的信干噪比(SINR)和各自的期望值,并据此推导出系统遍历总容量的解形式,接着针对隐蔽通信建立了二元假设问题,推导出误检测率的解形式,并据此计算出平均最小误检测率。除此之外,还分析了无IRS系统的遍历总容量和平均最小误检测率,与双IRS系统进行对比。仿真结果表明,双IRS系统的遍历总容量和平均最小误检测率优于无IRS系统,双IRS系统能够比传统的无IRS系统获得更高的容量和更低的误检测率。展开更多
Device to Device (D2D) communication is expected to be anessential part of 5G cellular networks. D2D communication enables closeproximitydevices to establish a direct communication session. D2D communicationoffers man...Device to Device (D2D) communication is expected to be anessential part of 5G cellular networks. D2D communication enables closeproximitydevices to establish a direct communication session. D2D communicationoffers many advantages, such as reduced latency, high data rates,range extension, and cellular offloading. The first step to establishing a D2Dsession is device discovery;an efficient device discovery will lead to efficientD2D communication. D2D device further needs to manage its mode of communication,perform resource allocation, manage its interference and mostimportantly control its power to improve the battery life of the device. Thiswork has developed six distinct scenarios in which D2D communication canbe initiated, considering their merits, demerits, limitations, and optimizationparameters. D2D communication procedures for the considered scenarioshave been formulated, based upon the signal flow, containing device discovery,resource allocation, and session teardown. Finally, latency for each scenariohas been evaluated, based on propagation and processing delays.展开更多
Rapid industrialization advancements have grabbed worldwide attention to integrate a very large number of electronic components into a smaller space for performing multifunctional operations.To fulfill the growing com...Rapid industrialization advancements have grabbed worldwide attention to integrate a very large number of electronic components into a smaller space for performing multifunctional operations.To fulfill the growing computing demand state-of-the-art materials are required for substituting traditional silicon and metal oxide semiconductors frameworks.Two-dimensional(2D)materials have shown their tremendous potential surpassing the limitations of conventional materials for developing smart devices.Despite their ground-breaking progress over the last two decades,systematic studies providing in-depth insights into the exciting physics of 2D materials are still lacking.Therefore,in this review,we discuss the importance of 2D materials in bridging the gap between conventional and advanced technologies due to their distinct statistical and quantum physics.Moreover,the inherent properties of these materials could easily be tailored to meet the specific requirements of smart devices.Hence,we discuss the physics of various 2D materials enabling them to fabricate smart devices.We also shed light on promising opportunities in developing smart devices and identified the formidable challenges that need to be addressed.展开更多
Two-dimensional (2D) materials have attracted significant attention as resistive switching materials for two-terminal non-volatile memory devices, often referred to as memristors, due to their potential for achieving ...Two-dimensional (2D) materials have attracted significant attention as resistive switching materials for two-terminal non-volatile memory devices, often referred to as memristors, due to their potential for achieving fast switching speeds and low power consumption. Their excellent gate tunability in electronic properties also enables hybrid devices combining the functionality of memory devices and transistors, with the possibility of realizing large-scale memristive crossbar arrays with high integration density. To facilitate the use of 2D materials in practical memristor applications, scalable synthesis of 2D materials with high electronic quality is critical. In addition, low-temperature integration for complementary metal oxide semiconductor (CMOS) back-end-of-line (BEOL) integration is important for embedded memory applications. Solution-based exfoliation has been actively explored as a facile, cost-effective method for the mass production and low-temperature integration of 2D materials. However, the films produced from the resulting 2D nanosheet dispersions exhibited poor electrical properties in the early stages of research, thereby hindering their use in electronic devices. Recent progress in the exfoliation process and post-processing has led to significant improvements in the electronic performance of solution-processed 2D materials, driving increased adoption of these materials in memristor research. In this review article, we provide a thorough overview of the progress and current status of memristive devices utilizing solution-processed 2D resistive switching layers. We begin by introducing the electrical characteristics and resistive switching mechanisms of memristors fabricated with conventional materials to lay the groundwork for understanding memristive behavior in 2D materials. Representative solution-based exfoliation and film formation techniques are also introduced, emphasizing the benefits of these approaches for obtaining scalable 2D material films compared to conventional methods such as mechanical exfoliation and chemical vapor deposition. Finally, we explore the electrical characteristics, resistive switching mechanisms, and applications of solution-processed 2D memristive devices, discussing their advantages and remaining challenges.展开更多
Changshu Textile Machinery Works Co.,Ltd.was founded in 1958 and is a professional R&D and manufacturing enterprise of looms shedding device in China.The company's products cover three series of shedding devic...Changshu Textile Machinery Works Co.,Ltd.was founded in 1958 and is a professional R&D and manufacturing enterprise of looms shedding device in China.The company's products cover three series of shedding devices for looms(Dobby,Jacquard,Cam Motion),forming a series of products with electronic shedding devices as the main products,and mechanical shedding devices as the auxiliary products.D2876pro electronic dobby The D2876pro electronic dobby is a high-performance equipment designed for a maximum operating speed of 800rpm.It has 16 cams,and 12mm of pitch,with a high installation type.The shedding type is double lift and full clear open.Its maximum wefts is 12,800 and 100,000.It has a two-stage filtration lubrication with a gerotor pump oil recycle system,and it is suitable for water-jet looms.展开更多
This paper introduces a framework aimed at aiding the development of sixth-generation(6G)ultra-massive machine type communications(um-MTC).Precisely,the deployment of wireless power transfer(WPT)supported device-to-de...This paper introduces a framework aimed at aiding the development of sixth-generation(6G)ultra-massive machine type communications(um-MTC).Precisely,the deployment of wireless power transfer(WPT)supported device-to-device(D2D)communication occurs within multiple-input singleoutput non-orthogonal multiple access(MISONOMA)downlink networks to facilitate spectrum and energy collaboration.A pure fractional programming(PFP)algorithm is proposed to maximize the WPT-assisted device’s energy efficiency.An optimal closed-form solution for determining the time-switching coefficient of the WPT device is provided.For the robust beamforming design,the complex multi-dimension quadratic transform is applied.Moreover,the paper applies the deep deterministic policy gradient(DDPG)-based approach to directly address the problem and compares it with the proposed algorithm.Simulation outcomes highlight two key insights:1)The PFP algorithm surpasses the performance of the DRL-based algorithm when the acquired channel state information(CSI)is accurate or contains negligible errors,while the opposite is true for imperfect CSI 2)The higher energy efficiency gains can be achieved in NOMA scheme than that in Orthogonal Multiple Access(OMA)scheme.展开更多
Flexible electrochromic devices(FECDs)demonstrate significant potential for applications in wearable elec-tronics,military camouflage,and flexible smart displays.As a crucial electrochromic material,poly(3,4-ethylened...Flexible electrochromic devices(FECDs)demonstrate significant potential for applications in wearable elec-tronics,military camouflage,and flexible smart displays.As a crucial electrochromic material,poly(3,4-ethylenedioxythiophene):polystyrene sulfonate(PEDOT:PSS)is widely used in FECDs due to its excellent mechanical flexibility,tunable conductivity,and non-toxicity.However,the manufacturing process for patterned PEDOT:PSS electrochromic devices remains intricate,costly,and challenging to personalize.To address this challenge,we have developed a 3D-printable ink with controllable rheological properties through a concentration-tuning strategy,enabling programmable,patterned printing of PEDOT-based conductive polymer electrochromic layers.The 3D-printed FECDs exhibit outstanding electrochromic performance,including a high optical contrast(up to 47.9%at 635 nm),fast response times(t_(c)=1.6 s;t_(b)=0.6 s),high coloration efficiency(352 cm^(2) C^(-1)),and good cycling stability(with only a 9.3%decrease in optical contrast after 100 electrochemical cycles).Finally,we utilize 3D printing technology to construct flexible,patterned PEDOT:PSS electrochromic devices with bespoke butterfly designs.This work establishes the theoretical foundation for the application of 3D printing technology in PEDOT:PSS flexible electrochromic devices.展开更多
Currently,the development of high-efficiency two-dimensional(2D)transistors is still hindered by the limited availability of suitable semiconductors and the contact resistance between the metal contact and the 2D semi...Currently,the development of high-efficiency two-dimensional(2D)transistors is still hindered by the limited availability of suitable semiconductors and the contact resistance between the metal contact and the 2D semiconductors.Endeavors to address these challenges are highly desired.In this study,we conducted a comprehensive exploration of the potential 2D transition metal dinitrides(TMN_(2)s,TM=all the 3d,4d and 5d transition metals)with hexagonal(h-)and trigonal(t-)phases through systematic first-principles calculations.Among all h-TMN_(2)s and t-TMN_(2)s structures,we identified 8 TMN_(2)s that exhibit dynamical and thermal stability at room temperature.Of these,the h-TiN_(2),h-ZrN_(2)and h-HfN_(2)arefound to be semiconductors,and their direct bang gap,calculated at the HSE06 level,are 1.48,1.96 and 2.64 eV,respectively.The electron and hole mobility(μ_(e)andμ_(h))of these three structures exceed 1×10^(4)and1×10^(3)cm^(2)·V^(-1)·s^(-1),respectively.Especially,theμeof h-TiN_(2)amounts to 2.5×10^(4)cm^(2)·V^(-1)·s^(-1),and theμhof h-ZrN_(2)reaches to 7.7×10^(3)cm^(2)·V^(-1)·s^(-1).Importantly,unlike the MoS_(2)system,h-TMN_(2)forms Ohm contacts with both transition metals(e.g.,Cu)and 2D metals(e.g.,graphene),with tunneling possibilities exceeding 50%in the Cu system.These outstanding intrinsic semiconductor properties and contact characteristics exhibited by h-TMN_(2)highlight the immense potential of transition metal dinitrides in driving the advancement of next-generation information devices.Our findings significantly broaden the range of 2D materials and provide valuable insights for the development of high-eficiency 2D information devices.展开更多
文摘传统的功率分配算法由于复杂的矩阵运算与迭代所造成的高时延,在实际通信中实时获取信道信息十分困难,当前重要的研究方向是在系统性能和计算复杂度之间找到有效平衡。针对终端直通(Device-to-Device,D2D)用户与蜂窝用户的联合功率分配问题,提出一种异构功率控制图神经网络(Heterogeneous Power Control Graph Neural Network,HPCGNN)算法,旨在最大化所有用户的加权和速率。首先通过构建干扰的异构图,将信道和噪声等信息嵌入到图的节点和边;再由HPCGNN完成消息传递和更新,采用无监督学习方式优化深度神经网络(Deep Neural Network,DNN)参数,最终得到最佳的功率分配。仿真结果表明,相较于其他深度学习算法,所提算法能够有效提高系统性能,且在损失5%性能下相较分式规划(Fractional Programming,FP)能降低82%~98%的时间复杂度。
基金supported by the National Natural Science Foundation of China under Grant 61171092the JiangSu Educational Bureau Project under Grant 14KJA510004Prospective Research Project on Future Networks(JiangSu Future Networks Innovation Institute)
文摘Considering that modern mobile terminals possess the capability to detect users'proximity,and offer means to directly communicate and share content with the people in close area,Device-to-Device(D2D)based Proximity Services(ProSe)have recently witnessed great development,which enable users to seek for and utilize relevant value in their physical proximity,and are capable to create numerous new mobile service opportunities.However,without a breakthrough in battery technology,the energy will be the biggest limitation for ProSe.Through incorporating the features of ProSe(D2D communication technologies,abundant built-in sensors,localization-dependent,and context-aware,etc.),this paper thoroughly investigates the energy-efficient architecture and technologies for ProSe from the following four aspects:underlying networking technology,localization,application and architecture features,context-aware and user interactions.Besides exploring specific energy-efficient schemes pertaining to each aspect,this paper offers a perspective for research and applications.In brief,through classifying,summarizing and optimizing the multiple efforts on studying,modeling and reducing energy consumption for ProSe on mobile devices,the paper would provide guide for developers to build energy-efficient ProSe.
文摘对D2D(Device to Device)通信系统的隐蔽通信问题进行研究,提出了一种基于智能反射面(Intelligent Reflecting Surfaces,IRS)的D2D通信系统,该系统采用双IRS模式。首先分析了各信号的信干噪比(SINR)和各自的期望值,并据此推导出系统遍历总容量的解形式,接着针对隐蔽通信建立了二元假设问题,推导出误检测率的解形式,并据此计算出平均最小误检测率。除此之外,还分析了无IRS系统的遍历总容量和平均最小误检测率,与双IRS系统进行对比。仿真结果表明,双IRS系统的遍历总容量和平均最小误检测率优于无IRS系统,双IRS系统能够比传统的无IRS系统获得更高的容量和更低的误检测率。
基金supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF)funded by the Ministry of Education (NRF-2021R1A6A1A03039493)in part by the NRF grant funded by the Korea government (MSIT) (NRF-2022R1A2C1004401).
文摘Device to Device (D2D) communication is expected to be anessential part of 5G cellular networks. D2D communication enables closeproximitydevices to establish a direct communication session. D2D communicationoffers many advantages, such as reduced latency, high data rates,range extension, and cellular offloading. The first step to establishing a D2Dsession is device discovery;an efficient device discovery will lead to efficientD2D communication. D2D device further needs to manage its mode of communication,perform resource allocation, manage its interference and mostimportantly control its power to improve the battery life of the device. Thiswork has developed six distinct scenarios in which D2D communication canbe initiated, considering their merits, demerits, limitations, and optimizationparameters. D2D communication procedures for the considered scenarioshave been formulated, based upon the signal flow, containing device discovery,resource allocation, and session teardown. Finally, latency for each scenariohas been evaluated, based on propagation and processing delays.
文摘Rapid industrialization advancements have grabbed worldwide attention to integrate a very large number of electronic components into a smaller space for performing multifunctional operations.To fulfill the growing computing demand state-of-the-art materials are required for substituting traditional silicon and metal oxide semiconductors frameworks.Two-dimensional(2D)materials have shown their tremendous potential surpassing the limitations of conventional materials for developing smart devices.Despite their ground-breaking progress over the last two decades,systematic studies providing in-depth insights into the exciting physics of 2D materials are still lacking.Therefore,in this review,we discuss the importance of 2D materials in bridging the gap between conventional and advanced technologies due to their distinct statistical and quantum physics.Moreover,the inherent properties of these materials could easily be tailored to meet the specific requirements of smart devices.Hence,we discuss the physics of various 2D materials enabling them to fabricate smart devices.We also shed light on promising opportunities in developing smart devices and identified the formidable challenges that need to be addressed.
基金supported by the National Research Foundation(NRF)Grant funded by the Korean government(MSIT)(Nos.RS-2023-00208538,RS-2024-00411904,and RS-2023-00237308).
文摘Two-dimensional (2D) materials have attracted significant attention as resistive switching materials for two-terminal non-volatile memory devices, often referred to as memristors, due to their potential for achieving fast switching speeds and low power consumption. Their excellent gate tunability in electronic properties also enables hybrid devices combining the functionality of memory devices and transistors, with the possibility of realizing large-scale memristive crossbar arrays with high integration density. To facilitate the use of 2D materials in practical memristor applications, scalable synthesis of 2D materials with high electronic quality is critical. In addition, low-temperature integration for complementary metal oxide semiconductor (CMOS) back-end-of-line (BEOL) integration is important for embedded memory applications. Solution-based exfoliation has been actively explored as a facile, cost-effective method for the mass production and low-temperature integration of 2D materials. However, the films produced from the resulting 2D nanosheet dispersions exhibited poor electrical properties in the early stages of research, thereby hindering their use in electronic devices. Recent progress in the exfoliation process and post-processing has led to significant improvements in the electronic performance of solution-processed 2D materials, driving increased adoption of these materials in memristor research. In this review article, we provide a thorough overview of the progress and current status of memristive devices utilizing solution-processed 2D resistive switching layers. We begin by introducing the electrical characteristics and resistive switching mechanisms of memristors fabricated with conventional materials to lay the groundwork for understanding memristive behavior in 2D materials. Representative solution-based exfoliation and film formation techniques are also introduced, emphasizing the benefits of these approaches for obtaining scalable 2D material films compared to conventional methods such as mechanical exfoliation and chemical vapor deposition. Finally, we explore the electrical characteristics, resistive switching mechanisms, and applications of solution-processed 2D memristive devices, discussing their advantages and remaining challenges.
文摘Changshu Textile Machinery Works Co.,Ltd.was founded in 1958 and is a professional R&D and manufacturing enterprise of looms shedding device in China.The company's products cover three series of shedding devices for looms(Dobby,Jacquard,Cam Motion),forming a series of products with electronic shedding devices as the main products,and mechanical shedding devices as the auxiliary products.D2876pro electronic dobby The D2876pro electronic dobby is a high-performance equipment designed for a maximum operating speed of 800rpm.It has 16 cams,and 12mm of pitch,with a high installation type.The shedding type is double lift and full clear open.Its maximum wefts is 12,800 and 100,000.It has a two-stage filtration lubrication with a gerotor pump oil recycle system,and it is suitable for water-jet looms.
文摘This paper introduces a framework aimed at aiding the development of sixth-generation(6G)ultra-massive machine type communications(um-MTC).Precisely,the deployment of wireless power transfer(WPT)supported device-to-device(D2D)communication occurs within multiple-input singleoutput non-orthogonal multiple access(MISONOMA)downlink networks to facilitate spectrum and energy collaboration.A pure fractional programming(PFP)algorithm is proposed to maximize the WPT-assisted device’s energy efficiency.An optimal closed-form solution for determining the time-switching coefficient of the WPT device is provided.For the robust beamforming design,the complex multi-dimension quadratic transform is applied.Moreover,the paper applies the deep deterministic policy gradient(DDPG)-based approach to directly address the problem and compares it with the proposed algorithm.Simulation outcomes highlight two key insights:1)The PFP algorithm surpasses the performance of the DRL-based algorithm when the acquired channel state information(CSI)is accurate or contains negligible errors,while the opposite is true for imperfect CSI 2)The higher energy efficiency gains can be achieved in NOMA scheme than that in Orthogonal Multiple Access(OMA)scheme.
基金supported by the Natural Science Foundation of Jiangxi Province(20232ACB204002&20232BAB202044)Jiangxi Provincial Key Laboratory of Flexible Electronics(20212BCD42004&20242BCC32010).
文摘Flexible electrochromic devices(FECDs)demonstrate significant potential for applications in wearable elec-tronics,military camouflage,and flexible smart displays.As a crucial electrochromic material,poly(3,4-ethylenedioxythiophene):polystyrene sulfonate(PEDOT:PSS)is widely used in FECDs due to its excellent mechanical flexibility,tunable conductivity,and non-toxicity.However,the manufacturing process for patterned PEDOT:PSS electrochromic devices remains intricate,costly,and challenging to personalize.To address this challenge,we have developed a 3D-printable ink with controllable rheological properties through a concentration-tuning strategy,enabling programmable,patterned printing of PEDOT-based conductive polymer electrochromic layers.The 3D-printed FECDs exhibit outstanding electrochromic performance,including a high optical contrast(up to 47.9%at 635 nm),fast response times(t_(c)=1.6 s;t_(b)=0.6 s),high coloration efficiency(352 cm^(2) C^(-1)),and good cycling stability(with only a 9.3%decrease in optical contrast after 100 electrochemical cycles).Finally,we utilize 3D printing technology to construct flexible,patterned PEDOT:PSS electrochromic devices with bespoke butterfly designs.This work establishes the theoretical foundation for the application of 3D printing technology in PEDOT:PSS flexible electrochromic devices.
基金financially supported by the National Natural Science Foundation of China(No.52171141)the Fund of Natural Science Special(Special Post)Research Foundation of Guizhou University(No.2023-032)the Fund of Research Foundation of Guizhou University(No.2024-33)
文摘Currently,the development of high-efficiency two-dimensional(2D)transistors is still hindered by the limited availability of suitable semiconductors and the contact resistance between the metal contact and the 2D semiconductors.Endeavors to address these challenges are highly desired.In this study,we conducted a comprehensive exploration of the potential 2D transition metal dinitrides(TMN_(2)s,TM=all the 3d,4d and 5d transition metals)with hexagonal(h-)and trigonal(t-)phases through systematic first-principles calculations.Among all h-TMN_(2)s and t-TMN_(2)s structures,we identified 8 TMN_(2)s that exhibit dynamical and thermal stability at room temperature.Of these,the h-TiN_(2),h-ZrN_(2)and h-HfN_(2)arefound to be semiconductors,and their direct bang gap,calculated at the HSE06 level,are 1.48,1.96 and 2.64 eV,respectively.The electron and hole mobility(μ_(e)andμ_(h))of these three structures exceed 1×10^(4)and1×10^(3)cm^(2)·V^(-1)·s^(-1),respectively.Especially,theμeof h-TiN_(2)amounts to 2.5×10^(4)cm^(2)·V^(-1)·s^(-1),and theμhof h-ZrN_(2)reaches to 7.7×10^(3)cm^(2)·V^(-1)·s^(-1).Importantly,unlike the MoS_(2)system,h-TMN_(2)forms Ohm contacts with both transition metals(e.g.,Cu)and 2D metals(e.g.,graphene),with tunneling possibilities exceeding 50%in the Cu system.These outstanding intrinsic semiconductor properties and contact characteristics exhibited by h-TMN_(2)highlight the immense potential of transition metal dinitrides in driving the advancement of next-generation information devices.Our findings significantly broaden the range of 2D materials and provide valuable insights for the development of high-eficiency 2D information devices.
