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Field induced Chern insulating states in twisted monolayer–bilayer graphene
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作者 王政文 韩英卓 +3 位作者 Kenji Watanabe Takashi Taniguchi 姜宇航 毛金海 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第6期69-73,共5页
Unraveling the mechanism underlying topological phases, notably the Chern insulators(Ch Is) in strong correlated systems at the microscopy scale, has captivated significant research interest. Nonetheless, Ch Is harbor... Unraveling the mechanism underlying topological phases, notably the Chern insulators(Ch Is) in strong correlated systems at the microscopy scale, has captivated significant research interest. Nonetheless, Ch Is harboring topological information have not always manifested themselves, owing to the constraints imposed by displacement fields in certain experimental configurations. In this study, we employ density-tuned scanning tunneling microscopy(DT-STM) to investigate the Ch Is in twisted monolayer–bilayer graphene(t MBG). At zero magnetic field, we observe correlated metallic states.While under a magnetic field, a metal–insulator transition happens and an integer Ch I is formed emanating from the filling index s = 3 with a Chern number C = 1. Our results underscore the pivotal role of magnetic fields as a powerful probe for elucidating topological phases in twisted Van der Waals heterostructures. 展开更多
关键词 Chern insulators strong correlation effects two-dimensional van der Waals heterostructure density-tuned scanning tunneling microscopy(DT-STM)
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