By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
Let G be a 3 edge connected graph (possibly with multiple edges or loops), and let γ M(G) and β(G) be the maximum genus and the Betti number of G, respectively. Then γ M(G)≥β(G)/3 can be proved and this...Let G be a 3 edge connected graph (possibly with multiple edges or loops), and let γ M(G) and β(G) be the maximum genus and the Betti number of G, respectively. Then γ M(G)≥β(G)/3 can be proved and this answers a question posed by Chen, et al. in 1996.F FIRST OR展开更多
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
文摘Let G be a 3 edge connected graph (possibly with multiple edges or loops), and let γ M(G) and β(G) be the maximum genus and the Betti number of G, respectively. Then γ M(G)≥β(G)/3 can be proved and this answers a question posed by Chen, et al. in 1996.F FIRST OR
