Based on the variational theory, a wavelet-based numerical method is developed to calculate the defect states of acoustic waves in two-dimensional phononic crystals with point and line defects. The supercell technique...Based on the variational theory, a wavelet-based numerical method is developed to calculate the defect states of acoustic waves in two-dimensional phononic crystals with point and line defects. The supercell technique is applied. By expanding the displacement field and the material constants （mass density and elastic stiffness） in periodic wavelets, the explicit formulations of an eigenvalue problem for the plane harmonic bulk waves in such a phononic structure are derived. The point and line defect states in solid-liquid and solid-solid systems are calculated. Comparisons of the present results with those measured experimentally or those from the plane wave expansion method show that the present method can yield accurate results with faster convergence and less computing time.展开更多
In this paper, surface photovoltage spectroscopy （SPS） is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical v...In this paper, surface photovoltage spectroscopy （SPS） is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states （D^0/D^-） and the empty Si dangling states （D＋）. At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300℃ increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.展开更多
Low temperature(77 K)photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality.Several defect-related luminescence peaks have been observed,including 1.452 eV...Low temperature(77 K)photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality.Several defect-related luminescence peaks have been observed,including 1.452 eV,1.476 eV,1.326 eV peaks deriving from 78 meV GaAs antisite defects,and 1.372 eV,1.289 eV peaks resulting from As vacancy related defects.Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states.The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.展开更多
The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. ...The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.展开更多
Although tin halide perovskite has shown excellent photoelectric performance, its efficiency of solar cell is low compared with that of lead halide. In order to enhance the efficiency of tin halide perovskite solar ce...Although tin halide perovskite has shown excellent photoelectric performance, its efficiency of solar cell is low compared with that of lead halide. In order to enhance the efficiency of tin halide perovskite solar cell, a deep understanding of the role of the defects in the perovskite absorption layer and at the electron transport layer(ETL)/absorber or absorber/hole transport layer(HTL) interface is very necessary. In this work, the planar heterojunction-based CH_3NH_3SnI_3 perovskite solar cells were simulated with the SCAPS-1D program. Simulation results revealed a great dependence of device efficiency on defect density and interface quality of the perovskite absorber. The defect density at the front interface is critical for high efficiency, and the polarity of the interface charge has a different impact on the device efficiency. Strikingly, an efficiency over 29% was obtained under the moderate simulation conditions.展开更多
We built an ideal perovskite solar cell model and investigated the effects of defect states on the so- lar cell＇s performance. The verities of defect states with a different energy level in the band gap and those in ...We built an ideal perovskite solar cell model and investigated the effects of defect states on the so- lar cell＇s performance. The verities of defect states with a different energy level in the band gap and those in the absorption layer CH3NH3PbI3 （MAPbI3）, the interface between the buffer layer/MAPbI3, and the interface be- tween the hole transport material （HTM） and MAPbI3, were studied. We have quantitatively analyzed these effects on perovskite solar cells＇ performance parameters. They are open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency. We found that the performances of perovskite solar cells change worse with defect state density increasing, but when defect state density is lower than 1016 cm^-3, the effects are small. Defect states in the absorption layer have much larger effects than those in the adjacent interface layers. The per-ovskite solar cells have better performance as its working temperature is reduced. When the thickness of MAPbI3 is about 0.3μm, perovskite solar cells show better comprehensive performance, while the thickness 0.05μm for Spiro-OMeTAD is enough.展开更多
Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CulnGaSe2 （CIGS） thin film solar cells theoretically. The varieties of defect states （location in the ban...Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CulnGaSe2 （CIGS） thin film solar cells theoretically. The varieties of defect states （location in the band gap and densities） in absorption layer CIGS and in buffer layer CdS were examined. The performance parameters： open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency for different defect states were quantitatively analyzed. We found that defect states always harm the performance of CIGS solar cells, but when defect state density is less than 10 14 cm-3 in CIGS or less than 10 18 cm-3 in CdS, defect states have little effect on the performances. When defect states are located in the middle of the band gap, they are more harmful. The effects of temperature and thickness are also considered. We found that CIGS solar cells have optimal performance at about 170 K and 2 μm of CIGS is enough for solar light absorption.展开更多
Over the past decade, graphitic carbon nitride(g-C_(3)N_(4)) has emerged as a universal photocatalyst toward various sustainable carbo-neutral technologies. Despite solar applications discrepancy, g-C_(3)N_(4) is stil...Over the past decade, graphitic carbon nitride(g-C_(3)N_(4)) has emerged as a universal photocatalyst toward various sustainable carbo-neutral technologies. Despite solar applications discrepancy, g-C_(3)N_(4) is still confronted with a general fatal issue of insufficient supply of thermodynamically active photocarriers due to its inferior solar harvesting ability and sluggish charge transfer dynamics. Fortunately, this could be significantly alleviated by the “all-in-one” defect engineering strategy, which enables a simultaneous amelioration of both textural uniqueness and intrinsic electronic band structures. To this end, we have summarized an unprecedently comprehensive discussion on defect controls including the vacancy/non-metallic dopant creation with optimized electronic band structure and electronic density, metallic doping with ultraactive coordinated environment(M–N_(x), M–C_(2)N_(2), M–O bonding), functional group grafting with optimized band structure, and promoted crystallinity with extended conjugation π system with weakened interlayered van der Waals interaction. Among them, the defect states induced by various defect types such as N vacancy, P/S/halogen dopants, and cyano group in boosting solar harvesting and accelerating photocarrier transfer have also been emphasized. More importantly, the shallow defect traps identified by femtosecond transient absorption spectra(fs-TAS) have also been highlighted. It is believed that this review would pave the way for future readers with a unique insight into a more precise defective g-C_(3)N_(4) “customization”, motivating more profound thinking and flourishing research outputs on g-C_(3)N_(4)-based photocatalysis.展开更多
In recent years,the development of an environmentally friendly quantum dots(QDs)embedded luminous solid by a simple method has attracted considerable attention.In this study,semiconductor ZnS QDs were successfully pre...In recent years,the development of an environmentally friendly quantum dots(QDs)embedded luminous solid by a simple method has attracted considerable attention.In this study,semiconductor ZnS QDs were successfully prepared in an inorganic matrix of amorphous glass,which yielded beneficial broadband emission in the long-wavelength region of the visible range.The strong red emission belonged to the defect state energy level of the ZnS QDs,which could be enhanced by incorporation of nickel ions into the fixed matrix to regulate the defects state.The novel material had a small self-absorption,wide excitation and emission ranges,and thus potential applications in light-conversion devices,luminescent solar concentrators,and solar cell cover glasses.展开更多
The white upconversion luminescence （UCL） of upconversion nanoparticles （UCNPs） is mainly made up of the color red, green and blue. Interestingly, the white-light-emitting UCNPs can be obtained via a complex metho...The white upconversion luminescence （UCL） of upconversion nanoparticles （UCNPs） is mainly made up of the color red, green and blue. Interestingly, the white-light-emitting UCNPs can be obtained via a complex method of tridoping lanthanide ions such as Yb^3＋, Er^3＋, and Tm^3＋. We herein report that an excellent white UCL can be obtained from Yb/Tm double-doped ZnO. In this system, the blue and red UCL-emissions around 475 and 652 nm originate from ^1G4→^3H6 and ^1G4→^3F4 transition of Tm^3＋, respectively, and the green one can be attributed to the defect states （oxygen va- cancies） luminescence （DSL） of the ZnO host. Meanwhile, the fine nanostructure of ZnO：Yb/Tm is prepared by adjusting the concentration of OH-. Particularly, the one dimentional pencil-shaped nanorods with high aspect ratio achieve a strong green DSL emission due to the high concentration of oxygen vacancy. The oxygen vacancy defects play an irreplaceable role in affecting the intensities of blue and red UCL by acting as the intermediate state in the energy transfer process. More importantly, we demonstrate that the DSL and UCL can be combined into systems, paving a new road for obtaining the white UCL emission.展开更多
This paper analyzes the energy levels along the even-parity J = 1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. B...This paper analyzes the energy levels along the even-parity J = 1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm^-1, a total of 85 and 23 new energy levels, respectively, in the J = 1 and J = 2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.展开更多
Semiconducting transition-metal dichalcogenides(TMDs)have garnered significant interest due to their unique structures and properties,positioning them as promising candidates for novel electronic and optoelectronic de...Semiconducting transition-metal dichalcogenides(TMDs)have garnered significant interest due to their unique structures and properties,positioning them as promising candidates for novel electronic and optoelectronic devices.However,the performance of TMDs-based devices is hampered by the suboptimal quality of metal electrodes contacting the atomically thin TMDs layers.Understanding the mechanisms that influence contact quality is crucial for advancing TMDs devices.In this study,we investigated the conductive properties of tungsten selenide(WSe_(2))-based devices with different film thicknesses.Using the transmission line method,a negative correlation between contact resistance and film thickness in multi-electrode devices was revealed.Additionally,repeatability tests conducted at varied temperatures indicated enhanced device stability with increasing film thickness.Theoretical analysis,supported by thermionic emission theory and thermal simulations,suggests that the degradation in electrical properties is primarily due to the thermal effect at the contact interface.Furthermore,we found that van der Waals contacts could mitigate the thermal effect through a metal transfer method.Our findings elucidate the critical role of contact resistance in the electronic performance of 2D material-based field-effect transistors(FETs),which further expands their potential in the next generation of electronic and optoelectronic devices.展开更多
The positron annihilation lifetimes and the Doppler broadening by slow positron beam are measured in thin Fe films with thickness 500 nm, a thin Hf film with thickness 100 nm, and the bilayer Fe (50 nm)/Hf (50 nm) on ...The positron annihilation lifetimes and the Doppler broadening by slow positron beam are measured in thin Fe films with thickness 500 nm, a thin Hf film with thickness 100 nm, and the bilayer Fe (50 nm)/Hf (50 nm) on quartz glass substrate. We have analyzed the behavior in vacancy-type defects in each layer through some deposition temperatures and annealing. It is observed that the thin Fe film, the thin Hf film, and the bilayer Fe (50 nm)/Hf (50 nm) already contain many vacancy-type defects. We have investigated the change of densities of the vacancy-carbon complex and the small vacancy-cluster with carbons, through solid-state amorphization of Fe (50 nm)/Hf (50 nm) bilayer.展开更多
The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation.The effect of dielectric constant...The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation.The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated.The resonant frequencies and quality factors are calculated for PCs with different defects.The numerical results show that it is possible to modulate the location,width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.展开更多
采用有限元法分别对锂离子电池的荷电状态(state of charge,SOC)、内部缺陷(气泡缺陷、析锂缺陷和浸润不完全缺陷)与超声透射特性之间的影响规律进行了仿真分析。首先,利用Voronoi多边形建立了锂离子电池内部的多层多孔结构;其次,在仿...采用有限元法分别对锂离子电池的荷电状态(state of charge,SOC)、内部缺陷(气泡缺陷、析锂缺陷和浸润不完全缺陷)与超声透射特性之间的影响规律进行了仿真分析。首先,利用Voronoi多边形建立了锂离子电池内部的多层多孔结构;其次,在仿真过程中,通过改变正负极材料的力学参数(杨氏模量和密度)实现了锂离子电池不同荷电状态下超声透射特性的提取。仿真结果表明,随着荷电状态的增加,快纵波的声强幅值和慢纵波的声强幅值均呈现线性增加的规律,慢纵波的渡越时间呈现线性减小的规律。随后,对锂离子电池内部不同缺陷形式进行仿真分析。通过对比正常电池和缺陷电池的声透射信息可以发现:当锂离子电池底部存在气泡缺陷时,透射信号的声强幅值显著衰减,且随着气泡厚度的增加,声强幅值的衰减也在增加;此外,随着气泡位置的改变,透射信号的声强幅值也呈现规律性变化;当锂离子电池内部存在析锂缺陷时,透射信号的声强幅值和渡越时间均随着析锂厚度的增加而逐渐减小;当锂离子电池内部存在浸润不完全缺陷时,仿真模型将退化为单相多孔介质,频域中也只存在一个频率成分,且声强幅值存在衰减。研究内容解决了用有限元法对锂离子电池荷电状态、内部缺陷进行模拟处理的问题,且慢纵波波速的仿真结果与理论结果吻合良好。展开更多
By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1...By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-2.eV^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.展开更多
基金the National Natural Science Foundation of China(No.10632020)the German Research Foundation(No.ZH 15/11-1)jointly by the China Scholarship Council and the German Academic Exchange Service(No.D/08/01795).
文摘Based on the variational theory, a wavelet-based numerical method is developed to calculate the defect states of acoustic waves in two-dimensional phononic crystals with point and line defects. The supercell technique is applied. By expanding the displacement field and the material constants （mass density and elastic stiffness） in periodic wavelets, the explicit formulations of an eigenvalue problem for the plane harmonic bulk waves in such a phononic structure are derived. The point and line defect states in solid-liquid and solid-solid systems are calculated. Comparisons of the present results with those measured experimentally or those from the plane wave expansion method show that the present method can yield accurate results with faster convergence and less computing time.
文摘In this paper, surface photovoltage spectroscopy （SPS） is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states （D^0/D^-） and the empty Si dangling states （D＋）. At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300℃ increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.
基金Project supported by the National Natural Science Foundation of China(Grant No.21972103)the National Key Research and Development Program of China(Grant No.2016YFB040183)Research and Development Program of Shanxi Province,China(Grant No.201703D111026)
文摘Low temperature(77 K)photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality.Several defect-related luminescence peaks have been observed,including 1.452 eV,1.476 eV,1.326 eV peaks deriving from 78 meV GaAs antisite defects,and 1.372 eV,1.289 eV peaks resulting from As vacancy related defects.Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states.The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10764005 and 11164034)the New Century Training Program Foundation for Talents from the Ministry of Education of China (Grant No. NCET-08-0926)
文摘The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.
基金supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001)the Technology Development Project Program of Hengdian Group DMEGC Magnetics Co., Ltd (No. 2016330001002138)+1 种基金the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02)the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503)
文摘Although tin halide perovskite has shown excellent photoelectric performance, its efficiency of solar cell is low compared with that of lead halide. In order to enhance the efficiency of tin halide perovskite solar cell, a deep understanding of the role of the defects in the perovskite absorption layer and at the electron transport layer(ETL)/absorber or absorber/hole transport layer(HTL) interface is very necessary. In this work, the planar heterojunction-based CH_3NH_3SnI_3 perovskite solar cells were simulated with the SCAPS-1D program. Simulation results revealed a great dependence of device efficiency on defect density and interface quality of the perovskite absorber. The defect density at the front interface is critical for high efficiency, and the polarity of the interface charge has a different impact on the device efficiency. Strikingly, an efficiency over 29% was obtained under the moderate simulation conditions.
基金Project supported by the National Natural Science Foundation of China(Nos.11164014,11364025)the Gansu Science and Technology Pillar Program(No.1204GKCA057)the Gansu Supercomputer Center
文摘We built an ideal perovskite solar cell model and investigated the effects of defect states on the so- lar cell＇s performance. The verities of defect states with a different energy level in the band gap and those in the absorption layer CH3NH3PbI3 （MAPbI3）, the interface between the buffer layer/MAPbI3, and the interface be- tween the hole transport material （HTM） and MAPbI3, were studied. We have quantitatively analyzed these effects on perovskite solar cells＇ performance parameters. They are open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency. We found that the performances of perovskite solar cells change worse with defect state density increasing, but when defect state density is lower than 1016 cm^-3, the effects are small. Defect states in the absorption layer have much larger effects than those in the adjacent interface layers. The per-ovskite solar cells have better performance as its working temperature is reduced. When the thickness of MAPbI3 is about 0.3μm, perovskite solar cells show better comprehensive performance, while the thickness 0.05μm for Spiro-OMeTAD is enough.
基金Project supported by the National Natural Science Foundation of China(Nos.11164014,11364025,51065014)the Science and Technology Pillar Program of Gansu Province(No.1204GKCA057)
文摘Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CulnGaSe2 （CIGS） thin film solar cells theoretically. The varieties of defect states （location in the band gap and densities） in absorption layer CIGS and in buffer layer CdS were examined. The performance parameters： open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency for different defect states were quantitatively analyzed. We found that defect states always harm the performance of CIGS solar cells, but when defect state density is less than 10 14 cm-3 in CIGS or less than 10 18 cm-3 in CdS, defect states have little effect on the performances. When defect states are located in the middle of the band gap, they are more harmful. The effects of temperature and thickness are also considered. We found that CIGS solar cells have optimal performance at about 170 K and 2 μm of CIGS is enough for solar light absorption.
基金the support of the Australia Research Council (ARC) through the Discovery Project (DP230101040)the Natural Science Foundation of Shandong Province (ZR2022QB139, No. ZR2020KF025)+3 种基金the Starting Research Fund (Grant No. 20210122) from the Ludong Universitythe Natural Science Foundation of China (12274190) from the Ludong Universitythe support of the Shandong Youth Innovation Team Introduction and Education Programthe Special Fund for Taishan Scholars Project (No. tsqn202211186) in Shandong Province。
文摘Over the past decade, graphitic carbon nitride(g-C_(3)N_(4)) has emerged as a universal photocatalyst toward various sustainable carbo-neutral technologies. Despite solar applications discrepancy, g-C_(3)N_(4) is still confronted with a general fatal issue of insufficient supply of thermodynamically active photocarriers due to its inferior solar harvesting ability and sluggish charge transfer dynamics. Fortunately, this could be significantly alleviated by the “all-in-one” defect engineering strategy, which enables a simultaneous amelioration of both textural uniqueness and intrinsic electronic band structures. To this end, we have summarized an unprecedently comprehensive discussion on defect controls including the vacancy/non-metallic dopant creation with optimized electronic band structure and electronic density, metallic doping with ultraactive coordinated environment(M–N_(x), M–C_(2)N_(2), M–O bonding), functional group grafting with optimized band structure, and promoted crystallinity with extended conjugation π system with weakened interlayered van der Waals interaction. Among them, the defect states induced by various defect types such as N vacancy, P/S/halogen dopants, and cyano group in boosting solar harvesting and accelerating photocarrier transfer have also been emphasized. More importantly, the shallow defect traps identified by femtosecond transient absorption spectra(fs-TAS) have also been highlighted. It is believed that this review would pave the way for future readers with a unique insight into a more precise defective g-C_(3)N_(4) “customization”, motivating more profound thinking and flourishing research outputs on g-C_(3)N_(4)-based photocatalysis.
基金supported by the National Key Research and Development Project of China(2018YFE0207700)the National Natural Science Foundation of China(NSFC)(61975193,51872270 and U1909211).
文摘In recent years,the development of an environmentally friendly quantum dots(QDs)embedded luminous solid by a simple method has attracted considerable attention.In this study,semiconductor ZnS QDs were successfully prepared in an inorganic matrix of amorphous glass,which yielded beneficial broadband emission in the long-wavelength region of the visible range.The strong red emission belonged to the defect state energy level of the ZnS QDs,which could be enhanced by incorporation of nickel ions into the fixed matrix to regulate the defects state.The novel material had a small self-absorption,wide excitation and emission ranges,and thus potential applications in light-conversion devices,luminescent solar concentrators,and solar cell cover glasses.
基金supported by the National Natural Science Foundation of China (11374080)
文摘The white upconversion luminescence （UCL） of upconversion nanoparticles （UCNPs） is mainly made up of the color red, green and blue. Interestingly, the white-light-emitting UCNPs can be obtained via a complex method of tridoping lanthanide ions such as Yb^3＋, Er^3＋, and Tm^3＋. We herein report that an excellent white UCL can be obtained from Yb/Tm double-doped ZnO. In this system, the blue and red UCL-emissions around 475 and 652 nm originate from ^1G4→^3H6 and ^1G4→^3F4 transition of Tm^3＋, respectively, and the green one can be attributed to the defect states （oxygen va- cancies） luminescence （DSL） of the ZnO host. Meanwhile, the fine nanostructure of ZnO：Yb/Tm is prepared by adjusting the concentration of OH-. Particularly, the one dimentional pencil-shaped nanorods with high aspect ratio achieve a strong green DSL emission due to the high concentration of oxygen vacancy. The oxygen vacancy defects play an irreplaceable role in affecting the intensities of blue and red UCL by acting as the intermediate state in the energy transfer process. More importantly, we demonstrate that the DSL and UCL can be combined into systems, paving a new road for obtaining the white UCL emission.
基金Project supported by the National Natural Science Foundation of China (Grant No 10574056)the Program for New Century Excellent Talents in University (China)
文摘This paper analyzes the energy levels along the even-parity J = 1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm^-1, a total of 85 and 23 new energy levels, respectively, in the J = 1 and J = 2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.
基金supported by the Science and Technology Innovation Council of Shenzhen(No.KQTD20170810105439418)the National Key R&D Project from Minister of Science and Technology,China(No.2021YFB3200304)+2 种基金National Natural Science Foundation of China(Nos.6237129,52125205,U20A20166,61805015 and 61804011)the Natural Science Foundation of Beijing Municipality(No.Z180011)the Fundamental Research Funds for the Central Universities.
文摘Semiconducting transition-metal dichalcogenides(TMDs)have garnered significant interest due to their unique structures and properties,positioning them as promising candidates for novel electronic and optoelectronic devices.However,the performance of TMDs-based devices is hampered by the suboptimal quality of metal electrodes contacting the atomically thin TMDs layers.Understanding the mechanisms that influence contact quality is crucial for advancing TMDs devices.In this study,we investigated the conductive properties of tungsten selenide(WSe_(2))-based devices with different film thicknesses.Using the transmission line method,a negative correlation between contact resistance and film thickness in multi-electrode devices was revealed.Additionally,repeatability tests conducted at varied temperatures indicated enhanced device stability with increasing film thickness.Theoretical analysis,supported by thermionic emission theory and thermal simulations,suggests that the degradation in electrical properties is primarily due to the thermal effect at the contact interface.Furthermore,we found that van der Waals contacts could mitigate the thermal effect through a metal transfer method.Our findings elucidate the critical role of contact resistance in the electronic performance of 2D material-based field-effect transistors(FETs),which further expands their potential in the next generation of electronic and optoelectronic devices.
文摘The positron annihilation lifetimes and the Doppler broadening by slow positron beam are measured in thin Fe films with thickness 500 nm, a thin Hf film with thickness 100 nm, and the bilayer Fe (50 nm)/Hf (50 nm) on quartz glass substrate. We have analyzed the behavior in vacancy-type defects in each layer through some deposition temperatures and annealing. It is observed that the thin Fe film, the thin Hf film, and the bilayer Fe (50 nm)/Hf (50 nm) already contain many vacancy-type defects. We have investigated the change of densities of the vacancy-carbon complex and the small vacancy-cluster with carbons, through solid-state amorphization of Fe (50 nm)/Hf (50 nm) bilayer.
文摘The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation.The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated.The resonant frequencies and quality factors are calculated for PCs with different defects.The numerical results show that it is possible to modulate the location,width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.
文摘采用有限元法分别对锂离子电池的荷电状态(state of charge,SOC)、内部缺陷(气泡缺陷、析锂缺陷和浸润不完全缺陷)与超声透射特性之间的影响规律进行了仿真分析。首先,利用Voronoi多边形建立了锂离子电池内部的多层多孔结构;其次,在仿真过程中,通过改变正负极材料的力学参数(杨氏模量和密度)实现了锂离子电池不同荷电状态下超声透射特性的提取。仿真结果表明,随着荷电状态的增加,快纵波的声强幅值和慢纵波的声强幅值均呈现线性增加的规律,慢纵波的渡越时间呈现线性减小的规律。随后,对锂离子电池内部不同缺陷形式进行仿真分析。通过对比正常电池和缺陷电池的声透射信息可以发现:当锂离子电池底部存在气泡缺陷时,透射信号的声强幅值显著衰减,且随着气泡厚度的增加,声强幅值的衰减也在增加;此外,随着气泡位置的改变,透射信号的声强幅值也呈现规律性变化;当锂离子电池内部存在析锂缺陷时,透射信号的声强幅值和渡越时间均随着析锂厚度的增加而逐渐减小;当锂离子电池内部存在浸润不完全缺陷时,仿真模型将退化为单相多孔介质,频域中也只存在一个频率成分,且声强幅值存在衰减。研究内容解决了用有限元法对锂离子电池荷电状态、内部缺陷进行模拟处理的问题,且慢纵波波速的仿真结果与理论结果吻合良好。
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60906041,10774001,60736033,and 60890193)the National Basic Research Program of China (Grant Nos.2006CB604908 and 2006CB921607)
文摘By using temperature-dependent Hall, variable-frequency capacitance-voltage and cathodoluminescence （CL） measurements, the identification of inductively coupled plasma （ICP）-induced defect states around the AlxGa1-xN/GaN heterointerface and their elimination by subsequent annealing in AlxGa1-xN/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75× 10^12 cm^-2.eV^-1. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N2 ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.
