The continuous descaling and cold rolling mill（ CDCM） is renow ned for its high capacity and high speed,which makes it very difficult to manually check the surface quality of steel strips. A surface-defect online de...The continuous descaling and cold rolling mill（ CDCM） is renow ned for its high capacity and high speed,which makes it very difficult to manually check the surface quality of steel strips. A surface-defect online detector and its components,which are employed in a CDCM at Baosteel,are introduced,including the electrical,imaging,processing and softw are systems. To evaluate the effectiveness of the application of this detector,and to reduce the number of false alarms,the optimal number of defect samples is determined,pre- and post-processing rules are established,and talking-voice and color-changing alarms are employed.展开更多
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has notbeen available for a long time. The end of range defects in St...The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has notbeen available for a long time. The end of range defects in St, produced by 140keVGe+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B+ implantation. The concentration of interstitial resultingfrom the B+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker,resulting from mobile non-equilibrium interstitials was demonstrated to be transient.Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well.展开更多
Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specif...Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.展开更多
文摘The continuous descaling and cold rolling mill（ CDCM） is renow ned for its high capacity and high speed,which makes it very difficult to manually check the surface quality of steel strips. A surface-defect online detector and its components,which are employed in a CDCM at Baosteel,are introduced,including the electrical,imaging,processing and softw are systems. To evaluate the effectiveness of the application of this detector,and to reduce the number of false alarms,the optimal number of defect samples is determined,pre- and post-processing rules are established,and talking-voice and color-changing alarms are employed.
文摘The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has notbeen available for a long time. The end of range defects in St, produced by 140keVGe+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B+ implantation. The concentration of interstitial resultingfrom the B+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker,resulting from mobile non-equilibrium interstitials was demonstrated to be transient.Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB0400400)
文摘Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.
