The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer w...The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping（VRH） transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p^＋＋-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p^＋＋-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10^-4Ω·cm^2 is achieved.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126)the National Science Fund for Distinguished Young Scholars of China(Grant No.60925017)+1 种基金One Hundred Person Project of the Chinese Academy of Sciencesthe Basic Research Project of Jiangsu Province,China(Grant No.BK20130362)
文摘The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping（VRH） transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p^＋＋-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p^＋＋-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10^-4Ω·cm^2 is achieved.
