With the development of artificial intelligence and the Internet of Things,the number of sensory nodes is growing rapidly,leading to the exchange of large quantities of redundant data between sensors and computing uni...With the development of artificial intelligence and the Internet of Things,the number of sensory nodes is growing rapidly,leading to the exchange of large quantities of redundant data between sensors and computing units.Insensor computing schemes,which integrate sensing and processing,have provided a promising route to addressing the sensing/processing bottleneck by reducing power consumption,time delay and hardware redundancy.In this study,an in-sensor computing architecture involving a photoelectronic cell based on a wafer-scale two-dimensional MoS_(2)thin film was demonstrated.The MoS_(2)photodetector cell used a top-gate device structure with in-dium tin oxide(ITO)as the transparent gate electrode,which exhibited high air-stability and a high photoresponsivity(R)up to 555.8 A W^(-1) at an illumination power density(P_(in))of 16.0μW cm^(-2)(λ=500 nm).Additionally,a MoS_(2)photodetector array with uniform photoresponsive characteristics was achieved.Furthermore,logic gates,including inverter,NAND,and NOR,were achieved based on MoS_(2)photodetector cells.Such multifunctional and robust in-sensor computing was ascribed to the uniform wafer-scale MoS_(2)film grown by atomic layer deposition(ALD)and the unique device structure.Because the detection of optical signals and logic operations were achieved through MoS_(2)photodetector cells with area efficiency,the proposed in-sensor computing device paves the way for potential applications in high-performance,integrated sensing and processing systems.展开更多
基金supported by the young scientist project of MOE innovation platform,the Science and Technology Commission of Shanghai Municipality(21DZ1100700)China Postdoctoral Science Foundation(Grant BX2021070,2021M700026)the Zhejiang Lab’s International Talent Fund for Young Professionals and Jiaxing Science and Technology Project(Grants No.2021AY10057).
文摘With the development of artificial intelligence and the Internet of Things,the number of sensory nodes is growing rapidly,leading to the exchange of large quantities of redundant data between sensors and computing units.Insensor computing schemes,which integrate sensing and processing,have provided a promising route to addressing the sensing/processing bottleneck by reducing power consumption,time delay and hardware redundancy.In this study,an in-sensor computing architecture involving a photoelectronic cell based on a wafer-scale two-dimensional MoS_(2)thin film was demonstrated.The MoS_(2)photodetector cell used a top-gate device structure with in-dium tin oxide(ITO)as the transparent gate electrode,which exhibited high air-stability and a high photoresponsivity(R)up to 555.8 A W^(-1) at an illumination power density(P_(in))of 16.0μW cm^(-2)(λ=500 nm).Additionally,a MoS_(2)photodetector array with uniform photoresponsive characteristics was achieved.Furthermore,logic gates,including inverter,NAND,and NOR,were achieved based on MoS_(2)photodetector cells.Such multifunctional and robust in-sensor computing was ascribed to the uniform wafer-scale MoS_(2)film grown by atomic layer deposition(ALD)and the unique device structure.Because the detection of optical signals and logic operations were achieved through MoS_(2)photodetector cells with area efficiency,the proposed in-sensor computing device paves the way for potential applications in high-performance,integrated sensing and processing systems.
